GB1323443A - Voltage variable capacitance device and a method of producing such a device - Google Patents

Voltage variable capacitance device and a method of producing such a device

Info

Publication number
GB1323443A
GB1323443A GB5348870A GB5348870A GB1323443A GB 1323443 A GB1323443 A GB 1323443A GB 5348870 A GB5348870 A GB 5348870A GB 5348870 A GB5348870 A GB 5348870A GB 1323443 A GB1323443 A GB 1323443A
Authority
GB
United Kingdom
Prior art keywords
layer
voltage
stored
insulating layer
charges
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB5348870A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Institute for Halvledarforskning AB
Original Assignee
Institute for Halvledarforskning AB
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Institute for Halvledarforskning AB filed Critical Institute for Halvledarforskning AB
Publication of GB1323443A publication Critical patent/GB1323443A/en
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00Resistors, capacitors or inductors
    • H10D1/60Capacitors
    • H10D1/62Capacitors having potential barriers
    • H10D1/64Variable-capacitance diodes, e.g. varactors 
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/28Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/28Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/291Oxides or nitrides or carbides, e.g. ceramics, glass
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00Field-effect transistors [FET]
    • H10D30/60Insulated-gate field-effect transistors [IGFET]
    • H10D30/69IGFETs having charge trapping gate insulators, e.g. MNOS transistors
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00Subject matter not provided for in other groups of this subclass
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Integrated Circuits (AREA)
GB5348870A 1969-11-17 1970-11-10 Voltage variable capacitance device and a method of producing such a device Expired GB1323443A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
SE15739/69A SE337430B (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1969-11-17 1969-11-17

Publications (1)

Publication Number Publication Date
GB1323443A true GB1323443A (en) 1973-07-18

Family

ID=20301165

Family Applications (1)

Application Number Title Priority Date Filing Date
GB5348870A Expired GB1323443A (en) 1969-11-17 1970-11-10 Voltage variable capacitance device and a method of producing such a device

Country Status (6)

Country Link
US (1) US3638078A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JP (1) JPS4822308B1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
DE (1) DE2056277A1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
FR (1) FR2067335B1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
GB (1) GB1323443A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
SE (1) SE337430B (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3840809A (en) * 1972-12-04 1974-10-08 Ibm Non-destructive measurement of dielectric properties
JPS51152707U (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * 1975-05-29 1976-12-06
JP2561413B2 (ja) * 1993-02-23 1996-12-11 日産自動車株式会社 半導体装置

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3202891A (en) * 1960-11-30 1965-08-24 Gen Telephone & Elect Voltage variable capacitor with strontium titanate dielectric
DE1514398A1 (de) * 1965-02-09 1969-09-11 Siemens Ag Halbleiteranordnung
GB1208077A (en) * 1967-05-19 1970-10-07 Sperry Rand Corp Semiconductor devices
CA813537A (en) * 1967-10-17 1969-05-20 Joseph H. Scott, Jr. Semiconductor memory device
US3512052A (en) * 1968-01-11 1970-05-12 Gen Motors Corp Metal-insulator-semiconductor voltage variable capacitor with controlled resistivity dielectric

Also Published As

Publication number Publication date
FR2067335A1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1971-08-20
DE2056277A1 (de) 1971-05-27
FR2067335B1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1974-09-20
US3638078A (en) 1972-01-25
JPS4822308B1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1973-07-05
SE337430B (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1971-08-09

Similar Documents

Publication Publication Date Title
ES2181679T3 (es) Condensador variable con la tension.
KR910019174A (ko) 시간종속 유전체 결함을 감소시킨 반도체 장치및 그 제조방법
US3671820A (en) High voltage thin-film transistor
GB1323443A (en) Voltage variable capacitance device and a method of producing such a device
US3590272A (en) Mis solid-state memory elements unitizing stable and reproducible charges in an insulating layer
Temple et al. Exact frequency dependent complex admittance of the MOS diode including surface states, Shockley-Read-Hall (SRH) impurity effects, and low temperature dopant impurity response
US2975342A (en) Narrow base planar junction punch-thru diode
GB2007022A (en) A method of polarizing a thermoplastic resin film
Statz et al. Electrical conduction via slow surface states on semiconductors
JPS6155790B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
US4035665A (en) Charge-coupled device comprising semiconductors having different forbidden band widths
US3585414A (en) Continuously tunable varactor
EP0232117B1 (en) Semiconductor variable capacitance element
GB1519001A (en) Arrangements for digitising an anologue electric input signal
US3472703A (en) Method for producing semiconductor devices
US4672313A (en) Device for checking mobile electrical charges in a MOS integrated circuit
US4240089A (en) Linearized charge transfer devices
US3423654A (en) Bistable ferroelectric field effect device
US3419737A (en) Hall effect inductive element
Colinge et al. Field-effect in large grain polysilicon transistors
US3548218A (en) Ultra-short-duration high-current-burst generator
DeClerck Characterization of surface states at the Si-SiO2 interface
EP0316192A3 (en) Semi-conductor variable capacitance element
Harman et al. Some Electrical Properties of the Porous Graphite Contact on p‐Type Silicon
Ohwada Charge transport phenomena in MOS system

Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PLNP Patent lapsed through nonpayment of renewal fees