JPS6155790B2 - - Google Patents
Info
- Publication number
- JPS6155790B2 JPS6155790B2 JP3068677A JP3068677A JPS6155790B2 JP S6155790 B2 JPS6155790 B2 JP S6155790B2 JP 3068677 A JP3068677 A JP 3068677A JP 3068677 A JP3068677 A JP 3068677A JP S6155790 B2 JPS6155790 B2 JP S6155790B2
- Authority
- JP
- Japan
- Prior art keywords
- diode
- capacitance
- insulating layer
- floating gate
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000000758 substrate Substances 0.000 claims description 14
- 239000004065 semiconductor Substances 0.000 claims description 3
- 239000003990 capacitor Substances 0.000 claims 1
- 239000000463 material Substances 0.000 claims 1
- 238000000034 method Methods 0.000 description 6
- 150000004767 nitrides Chemical class 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 230000006386 memory function Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
Landscapes
- Read Only Memory (AREA)
- Semiconductor Integrated Circuits (AREA)
- Channel Selection Circuits, Automatic Tuning Circuits (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3068677A JPS53115185A (en) | 1977-03-17 | 1977-03-17 | Memory type variable capacitive device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3068677A JPS53115185A (en) | 1977-03-17 | 1977-03-17 | Memory type variable capacitive device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS53115185A JPS53115185A (en) | 1978-10-07 |
| JPS6155790B2 true JPS6155790B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1986-11-29 |
Family
ID=12310559
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3068677A Granted JPS53115185A (en) | 1977-03-17 | 1977-03-17 | Memory type variable capacitive device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS53115185A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS56131969A (en) * | 1980-03-19 | 1981-10-15 | Seiko Instr & Electronics Ltd | Semiconductor variable capacity element |
| JPS575369A (en) * | 1980-06-11 | 1982-01-12 | Seiko Instr & Electronics Ltd | Semiconductor variable capacitance element |
| JPS5778181A (en) * | 1980-11-04 | 1982-05-15 | Seiko Instr & Electronics Ltd | Semiconductor variable capacity element |
| JPS57166080A (en) * | 1981-04-07 | 1982-10-13 | Seiko Instr & Electronics Ltd | Semiconductor variable capacity element |
| JPS57188886A (en) * | 1981-05-18 | 1982-11-19 | Seiko Instr & Electronics Ltd | Multiple semiconductor variable capacitance element |
| JPS5837970A (ja) * | 1981-08-31 | 1983-03-05 | Seiko Instr & Electronics Ltd | 容量可変回路 |
| JPS5853864A (ja) * | 1981-09-25 | 1983-03-30 | Seiko Instr & Electronics Ltd | 半導体可変容量素子 |
| JPS5851452U (ja) * | 1981-10-01 | 1983-04-07 | セイコーインスツルメンツ株式会社 | 集積回路装置 |
| JP4666281B2 (ja) * | 2005-03-01 | 2011-04-06 | ブラザー工業株式会社 | 無線タグ回路素子及びタグラベル作成装置 |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS51114883A (en) * | 1975-04-02 | 1976-10-08 | Seiko Epson Corp | Mos variable capacitance element incorporated in ic |
| US4028694A (en) * | 1975-06-10 | 1977-06-07 | International Business Machines Corporation | A/D and D/A converter using C-2C ladder network |
| NL7609587A (nl) * | 1975-09-08 | 1977-03-10 | Ncr Co | Elektrisch afstembare mnos-capaciteit. |
-
1977
- 1977-03-17 JP JP3068677A patent/JPS53115185A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS53115185A (en) | 1978-10-07 |
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