JPS57188886A - Multiple semiconductor variable capacitance element - Google Patents

Multiple semiconductor variable capacitance element

Info

Publication number
JPS57188886A
JPS57188886A JP7453481A JP7453481A JPS57188886A JP S57188886 A JPS57188886 A JP S57188886A JP 7453481 A JP7453481 A JP 7453481A JP 7453481 A JP7453481 A JP 7453481A JP S57188886 A JPS57188886 A JP S57188886A
Authority
JP
Japan
Prior art keywords
variable capacitance
electrode
variable
floating
capacitance element
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP7453481A
Other languages
Japanese (ja)
Other versions
JPS6366433B2 (en
Inventor
Yoshio Hattori
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Instruments Inc
Original Assignee
Seiko Instruments Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Instruments Inc filed Critical Seiko Instruments Inc
Priority to JP7453481A priority Critical patent/JPS57188886A/en
Publication of JPS57188886A publication Critical patent/JPS57188886A/en
Publication of JPS6366433B2 publication Critical patent/JPS6366433B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/92—Capacitors having potential barriers
    • H01L29/93—Variable capacitance diodes, e.g. varactors

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE:To obtain multiple semiconductor variable capacitance elements, or a plurality of semiconductor variable capacitance elements that can be made variable in preset correlative conditions by a construction wherein more than one floating electrode of the variable capacitance element are connected together and only one variable capacitance electrode is provided. CONSTITUTION:A first variable capacitance element without a variable capacitance electrode is constructed of a substrate 11, a first floating electrode 13 and a first capacitive electrode 14, whereas a second variable capacitance element with a variable capacitive electrode is made up of the substrate 11, a second floating electrode 15 and a second capacitive electrode 14. Since the floating electrodes 13, 15 are connected together via a low resistor 19, the potentials of the floating electrodes becomes equal, whereas by changing the low resistor 19 into a high resistor and making loose the connection of both capacitance elements from the electronic circuit standpoint, the first and the second variable capacitance elements are simultaneously made variable while the correlation between the floating electrodes is maintained because their potentials are equal. Moreover, from the electronic circuit standpoint, they can be utilized as an independent capacitance.
JP7453481A 1981-05-18 1981-05-18 Multiple semiconductor variable capacitance element Granted JPS57188886A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7453481A JPS57188886A (en) 1981-05-18 1981-05-18 Multiple semiconductor variable capacitance element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7453481A JPS57188886A (en) 1981-05-18 1981-05-18 Multiple semiconductor variable capacitance element

Publications (2)

Publication Number Publication Date
JPS57188886A true JPS57188886A (en) 1982-11-19
JPS6366433B2 JPS6366433B2 (en) 1988-12-20

Family

ID=13550047

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7453481A Granted JPS57188886A (en) 1981-05-18 1981-05-18 Multiple semiconductor variable capacitance element

Country Status (1)

Country Link
JP (1) JPS57188886A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2003096434A1 (en) * 2002-05-09 2003-11-20 Impinj, Inc. Metal dielectric semiconductor floating gate variable capacitor

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53115185A (en) * 1977-03-17 1978-10-07 Sanyo Electric Co Ltd Memory type variable capacitive device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53115185A (en) * 1977-03-17 1978-10-07 Sanyo Electric Co Ltd Memory type variable capacitive device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2003096434A1 (en) * 2002-05-09 2003-11-20 Impinj, Inc. Metal dielectric semiconductor floating gate variable capacitor

Also Published As

Publication number Publication date
JPS6366433B2 (en) 1988-12-20

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