JPS562662A - Laminated electric circuit - Google Patents
Laminated electric circuitInfo
- Publication number
- JPS562662A JPS562662A JP7820479A JP7820479A JPS562662A JP S562662 A JPS562662 A JP S562662A JP 7820479 A JP7820479 A JP 7820479A JP 7820479 A JP7820479 A JP 7820479A JP S562662 A JPS562662 A JP S562662A
- Authority
- JP
- Japan
- Prior art keywords
- region
- circuit
- wiring
- regions
- electrodes
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/5222—Capacitive arrangements or effects of, or between wiring layers
- H01L23/5223—Capacitor integral with wiring layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/552—Protection against radiation, e.g. light or electromagnetic waves
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
- H01L23/585—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries comprising conductive layers or plates or strips or rods or rings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Health & Medical Sciences (AREA)
- Electromagnetism (AREA)
- Toxicology (AREA)
- Semiconductor Integrated Circuits (AREA)
Abstract
PURPOSE:To obtain a laminated electric circuit without having a bad contact between electrodes by providing a capacitance electrode on the opposed surfaces of the opposing electric circuit flat plates by performing a signal transmission of each region provided on the flat plates using the said electrodes. CONSTITUTION:The inside and the outside surfaces of a P-type Si substrate 20 are used as wiring regions 30 and 40 respectively, and the exterior front and back sides of the above are used as capacitor regions 50 and 60. Also, at the section which comes into contact with the wiring region of the substrate 20, a logical circuit region 22, a transmission circuit region 24, receiving circuit region 26 etc. are provided. In the region 30 opposing to the region 22, a wiring materials 32 and 34 to be connected to the other circuit 22 are formed and they are shielded using a conductive member 36. Also a wiring material 38 is connected to the regions 24 and 26 respectively, and one end of the said wiring material is connected to a capacitance electrode 52 provided on the region 50. On the regions 40 and 60, a wiring material 42 and a capacitance electrode 62 are provided. Thus, the electrodes 52 and 62 are connected by an N-type continuity path 28 which is provided in the substrate 20 and a circuit without having a bad contact can be obtained.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP7820479A JPS562662A (en) | 1979-06-22 | 1979-06-22 | Laminated electric circuit |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP7820479A JPS562662A (en) | 1979-06-22 | 1979-06-22 | Laminated electric circuit |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS562662A true JPS562662A (en) | 1981-01-12 |
JPS6230500B2 JPS6230500B2 (en) | 1987-07-02 |
Family
ID=13655487
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP7820479A Granted JPS562662A (en) | 1979-06-22 | 1979-06-22 | Laminated electric circuit |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS562662A (en) |
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61180468A (en) * | 1985-02-06 | 1986-08-13 | Agency Of Ind Science & Technol | Laminated type semiconductor device |
DE3623735A1 (en) * | 1985-07-19 | 1987-01-22 | Hitachi Ltd | SIGNAL TRANSFER CIRCUIT |
US4893174A (en) * | 1985-07-08 | 1990-01-09 | Hitachi, Ltd. | High density integration of semiconductor circuit |
US5165010A (en) * | 1989-01-06 | 1992-11-17 | Hitachi, Ltd. | Information processing system |
JP2005093999A (en) * | 2003-09-05 | 2005-04-07 | Sun Microsyst Inc | Proximity communication which is electrically aligned |
JP2005535116A (en) * | 2002-07-29 | 2005-11-17 | サン・マイクロシステムズ・インコーポレイテッド | Method and apparatus for electrically aligning capacitively coupled chip pads |
JP2008004714A (en) * | 2006-06-22 | 2008-01-10 | Nec Corp | Chip-laminated semiconductor device |
US7990747B2 (en) | 2007-03-09 | 2011-08-02 | Nec Corporation | Semiconductor chip and semiconductor device |
-
1979
- 1979-06-22 JP JP7820479A patent/JPS562662A/en active Granted
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61180468A (en) * | 1985-02-06 | 1986-08-13 | Agency Of Ind Science & Technol | Laminated type semiconductor device |
US4893174A (en) * | 1985-07-08 | 1990-01-09 | Hitachi, Ltd. | High density integration of semiconductor circuit |
DE3623735A1 (en) * | 1985-07-19 | 1987-01-22 | Hitachi Ltd | SIGNAL TRANSFER CIRCUIT |
US4723082A (en) * | 1985-07-19 | 1988-02-02 | Hitachi, Ltd. | Signal transfer circuit for use in laminated multilayer electric circuit |
US5165010A (en) * | 1989-01-06 | 1992-11-17 | Hitachi, Ltd. | Information processing system |
JP2005535116A (en) * | 2002-07-29 | 2005-11-17 | サン・マイクロシステムズ・インコーポレイテッド | Method and apparatus for electrically aligning capacitively coupled chip pads |
JP2005093999A (en) * | 2003-09-05 | 2005-04-07 | Sun Microsyst Inc | Proximity communication which is electrically aligned |
JP2008004714A (en) * | 2006-06-22 | 2008-01-10 | Nec Corp | Chip-laminated semiconductor device |
US7990747B2 (en) | 2007-03-09 | 2011-08-02 | Nec Corporation | Semiconductor chip and semiconductor device |
Also Published As
Publication number | Publication date |
---|---|
JPS6230500B2 (en) | 1987-07-02 |
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