JPS575369A - Semiconductor variable capacitance element - Google Patents
Semiconductor variable capacitance elementInfo
- Publication number
- JPS575369A JPS575369A JP7878880A JP7878880A JPS575369A JP S575369 A JPS575369 A JP S575369A JP 7878880 A JP7878880 A JP 7878880A JP 7878880 A JP7878880 A JP 7878880A JP S575369 A JPS575369 A JP S575369A
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- substrate
- variable capacitance
- capacitance element
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title abstract 4
- 239000000758 substrate Substances 0.000 abstract 7
- 239000012535 impurity Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
- H01L29/7881—Programmable transistors with only two possible levels of programmation
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Semiconductor Integrated Circuits (AREA)
Abstract
PURPOSE:To arbitrarily and simply vary the capacity of a semiconductor variable capacitance element by forming a floating electrode insulated externally and covered with an insulating film on a semiconductor substrate and charging the electrode. CONSTITUTION:A floating electrode 3 insulated externally and covered with oxidized insulating film 2 is formed on a semiconductor substrate 1, and an electrode 4 capacitively coupled with the electrode 3 is formed on the electrode 3. An impurity diffused layer 6 of reverse conductive type to the substrate 1 is formed on the substrate 1, and is contacted partly of the electrode 3 via an insulating oxidized film 5. The surface of the substrate 1 can be inverted, depleted, or stored in accordance with the charging amount of the electrode 3. The capacity between the electrode 4 and the substrate 1 is varied in accordance with the inverted, depleted or stored state of the surface of the substrate 1.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7878880A JPS575369A (en) | 1980-06-11 | 1980-06-11 | Semiconductor variable capacitance element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7878880A JPS575369A (en) | 1980-06-11 | 1980-06-11 | Semiconductor variable capacitance element |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS575369A true JPS575369A (en) | 1982-01-12 |
Family
ID=13671613
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7878880A Pending JPS575369A (en) | 1980-06-11 | 1980-06-11 | Semiconductor variable capacitance element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS575369A (en) |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS53115185A (en) * | 1977-03-17 | 1978-10-07 | Sanyo Electric Co Ltd | Memory type variable capacitive device |
-
1980
- 1980-06-11 JP JP7878880A patent/JPS575369A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS53115185A (en) * | 1977-03-17 | 1978-10-07 | Sanyo Electric Co Ltd | Memory type variable capacitive device |
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