JPS57111882A - Semiconductor storage element - Google Patents
Semiconductor storage elementInfo
- Publication number
- JPS57111882A JPS57111882A JP55187303A JP18730380A JPS57111882A JP S57111882 A JPS57111882 A JP S57111882A JP 55187303 A JP55187303 A JP 55187303A JP 18730380 A JP18730380 A JP 18730380A JP S57111882 A JPS57111882 A JP S57111882A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- semiconductor
- conductive
- polycrystalline
- storage cell
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title abstract 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 210000000352 storage cell Anatomy 0.000 abstract 2
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 239000012535 impurity Substances 0.000 abstract 1
- 230000010354 integration Effects 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 230000003068 static effect Effects 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/0688—Integrated circuits having a three-dimensional layout
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Semiconductor Memories (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Abstract
PURPOSE:To enhance the performance of a small-sized static storage cell, by attaining a simpler constitution with a higher degree of integration than the conventional 6-transistor storage cell. CONSTITUTION:The 2nd conductive semiconductor layer 2 is formed on the 1st conductive p or n type semiconductor substrate 1. Furthermore the 1st conductive semiconductor layer 3 is formed on the layer 2. A polycrystalline semiconductor 8 like SiO2 is formed on the layer 3 to such 3-layer structure semiconductor layer as mentioned above, and a contact is secured between the semiconductor 8 and the layer 3. An impurity is added to the polycrystalline layer 8 on the layer 3 to obtain the 2nd conductive semiconductor layer. At the same time, a load resistance element composed of the layer 8 is provided at an area from the layer 8 through a supply point of the power supply voltage.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP55187303A JPS5938739B2 (en) | 1980-12-29 | 1980-12-29 | semiconductor memory element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP55187303A JPS5938739B2 (en) | 1980-12-29 | 1980-12-29 | semiconductor memory element |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS57111882A true JPS57111882A (en) | 1982-07-12 |
| JPS5938739B2 JPS5938739B2 (en) | 1984-09-19 |
Family
ID=16203634
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP55187303A Expired JPS5938739B2 (en) | 1980-12-29 | 1980-12-29 | semiconductor memory element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5938739B2 (en) |
-
1980
- 1980-12-29 JP JP55187303A patent/JPS5938739B2/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5938739B2 (en) | 1984-09-19 |
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