JPS5795657A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5795657A
JPS5795657A JP17113180A JP17113180A JPS5795657A JP S5795657 A JPS5795657 A JP S5795657A JP 17113180 A JP17113180 A JP 17113180A JP 17113180 A JP17113180 A JP 17113180A JP S5795657 A JPS5795657 A JP S5795657A
Authority
JP
Japan
Prior art keywords
semiconductor
constitution
layer
oxide film
type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP17113180A
Other languages
Japanese (ja)
Inventor
Yasumasa Otsuki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Suwa Seikosha KK
Original Assignee
Seiko Epson Corp
Suwa Seikosha KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp, Suwa Seikosha KK filed Critical Seiko Epson Corp
Priority to JP17113180A priority Critical patent/JPS5795657A/en
Publication of JPS5795657A publication Critical patent/JPS5795657A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE:To obtain the capacity of the constitution of metal-a metallic oxide-a semiconductor by forming the surface of the semiconductor in a storage type in consideration of a conduction type of the semiconductor and the polarity of applied voltage. CONSTITUTION:A P layer 6 is shaped to an N type Si substrate 1, the surface is coated with an oxide film 3, and a metallic electrode 4 is formed being opposed to the P layer 6. When the metallic electrode is made negative potential, capacity value is determined unidivertionally by opposite areas, the thickness of the oxide film and its permittivity, equal stable value is acquired, and the applying direction of voltage agrees with the direction of normal semiconductor devices.
JP17113180A 1980-12-04 1980-12-04 Semiconductor device Pending JPS5795657A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP17113180A JPS5795657A (en) 1980-12-04 1980-12-04 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP17113180A JPS5795657A (en) 1980-12-04 1980-12-04 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS5795657A true JPS5795657A (en) 1982-06-14

Family

ID=15917549

Family Applications (1)

Application Number Title Priority Date Filing Date
JP17113180A Pending JPS5795657A (en) 1980-12-04 1980-12-04 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5795657A (en)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4883787A (en) * 1972-02-08 1973-11-08

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4883787A (en) * 1972-02-08 1973-11-08

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