DE2031333C3 - Verfahren zum Herstellen eines Halbleiterbauelementes - Google Patents

Verfahren zum Herstellen eines Halbleiterbauelementes

Info

Publication number
DE2031333C3
DE2031333C3 DE2031333A DE2031333A DE2031333C3 DE 2031333 C3 DE2031333 C3 DE 2031333C3 DE 2031333 A DE2031333 A DE 2031333A DE 2031333 A DE2031333 A DE 2031333A DE 2031333 C3 DE2031333 C3 DE 2031333C3
Authority
DE
Germany
Prior art keywords
layer
resistance
semiconductor
semiconductor layer
silicon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE2031333A
Other languages
German (de)
English (en)
Other versions
DE2031333B2 (de
DE2031333A1 (de
Inventor
Hendrikus Josephus Antonius Van Eindhoven Dijk (Niederlande)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Publication of DE2031333A1 publication Critical patent/DE2031333A1/de
Publication of DE2031333B2 publication Critical patent/DE2031333B2/de
Application granted granted Critical
Publication of DE2031333C3 publication Critical patent/DE2031333C3/de
Expired legal-status Critical Current

Links

Classifications

    • H10P50/613—
    • H10P95/00—
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/049—Equivalence and options
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/051—Etching
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/085—Isolated-integrated
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/135—Removal of substrate
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/145—Shaped junctions
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/977—Thinning or removal of substrate

Landscapes

  • Weting (AREA)
  • Photovoltaic Devices (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Element Separation (AREA)
DE2031333A 1969-07-04 1970-06-24 Verfahren zum Herstellen eines Halbleiterbauelementes Expired DE2031333C3 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL6910274A NL6910274A (cg-RX-API-DMAC10.html) 1969-07-04 1969-07-04

Publications (3)

Publication Number Publication Date
DE2031333A1 DE2031333A1 (de) 1971-01-21
DE2031333B2 DE2031333B2 (de) 1977-11-17
DE2031333C3 true DE2031333C3 (de) 1978-07-13

Family

ID=19807388

Family Applications (1)

Application Number Title Priority Date Filing Date
DE2031333A Expired DE2031333C3 (de) 1969-07-04 1970-06-24 Verfahren zum Herstellen eines Halbleiterbauelementes

Country Status (11)

Country Link
US (1) US3640807A (cg-RX-API-DMAC10.html)
JP (1) JPS501985B1 (cg-RX-API-DMAC10.html)
AT (1) AT322633B (cg-RX-API-DMAC10.html)
BE (1) BE752897A (cg-RX-API-DMAC10.html)
CH (1) CH512144A (cg-RX-API-DMAC10.html)
DE (1) DE2031333C3 (cg-RX-API-DMAC10.html)
ES (1) ES381370A1 (cg-RX-API-DMAC10.html)
FR (1) FR2050507B1 (cg-RX-API-DMAC10.html)
GB (1) GB1316830A (cg-RX-API-DMAC10.html)
NL (1) NL6910274A (cg-RX-API-DMAC10.html)
SE (1) SE368114B (cg-RX-API-DMAC10.html)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3902979A (en) * 1974-06-24 1975-09-02 Westinghouse Electric Corp Insulator substrate with a thin mono-crystalline semiconductive layer and method of fabrication
US3962052A (en) * 1975-04-14 1976-06-08 International Business Machines Corporation Process for forming apertures in silicon bodies
US4054497A (en) * 1975-10-06 1977-10-18 Honeywell Inc. Method for electrolytically etching semiconductor material
US4033787A (en) * 1975-10-06 1977-07-05 Honeywell Inc. Fabrication of semiconductor devices utilizing ion implantation
JPS6047725B2 (ja) * 1977-06-14 1985-10-23 ソニー株式会社 フエライトの加工法
US4141621A (en) * 1977-08-05 1979-02-27 Honeywell Inc. Three layer waveguide for thin film lens fabrication
US4257061A (en) * 1977-10-17 1981-03-17 John Fluke Mfg. Co., Inc. Thermally isolated monolithic semiconductor die
NO843614L (no) * 1983-09-13 1986-06-23 Marconi Co Ltd Infra-roed detektor
US4554059A (en) * 1983-11-04 1985-11-19 Harris Corporation Electrochemical dielectric isolation technique
JPS6415913A (en) * 1987-07-09 1989-01-19 Mitsubishi Monsanto Chem Epitaxial growth method of substrate for high-brightness led
EP0309782B1 (de) * 1987-09-30 1994-06-01 Siemens Aktiengesellschaft Verfahren zum Ätzen von (100) Silizium
US4995953A (en) * 1989-10-30 1991-02-26 Motorola, Inc. Method of forming a semiconductor membrane using an electrochemical etch-stop
JP3151816B2 (ja) * 1990-08-06 2001-04-03 日産自動車株式会社 エッチング方法
US6984571B1 (en) 1999-10-01 2006-01-10 Ziptronix, Inc. Three dimensional device integration method and integrated device
US6500694B1 (en) * 2000-03-22 2002-12-31 Ziptronix, Inc. Three dimensional device integration method and integrated device
US6902987B1 (en) * 2000-02-16 2005-06-07 Ziptronix, Inc. Method for low temperature bonding and bonded structure
US6563133B1 (en) * 2000-08-09 2003-05-13 Ziptronix, Inc. Method of epitaxial-like wafer bonding at low temperature and bonded structure
US7109092B2 (en) 2003-05-19 2006-09-19 Ziptronix, Inc. Method of room temperature covalent bonding
US9465049B2 (en) * 2012-04-13 2016-10-11 James B. Colvin Apparatus and method for electronic sample preparation
CN111895679B (zh) * 2020-09-10 2022-04-01 江西北冰洋实业有限公司 一种半导体制冷片安装机构
WO2022094587A1 (en) 2020-10-29 2022-05-05 Invensas Bonding Technologies, Inc. Direct bonding methods and structures

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL153947B (nl) * 1967-02-25 1977-07-15 Philips Nv Werkwijze voor het vervaardigen van halfgeleiderinrichtingen, waarbij een selectief elektrolytisch etsproces wordt toegepast en halfgeleiderinrichting verkregen met toepassing van de werkwijze.
NL6706735A (cg-RX-API-DMAC10.html) * 1967-05-13 1968-11-14

Also Published As

Publication number Publication date
DE2031333B2 (de) 1977-11-17
FR2050507A1 (cg-RX-API-DMAC10.html) 1971-04-02
NL6910274A (cg-RX-API-DMAC10.html) 1971-01-06
SE368114B (cg-RX-API-DMAC10.html) 1974-06-17
CH512144A (de) 1971-08-31
DE2031333A1 (de) 1971-01-21
AT322633B (de) 1975-05-26
ES381370A1 (es) 1972-12-01
FR2050507B1 (cg-RX-API-DMAC10.html) 1974-06-14
US3640807A (en) 1972-02-08
JPS501985B1 (cg-RX-API-DMAC10.html) 1975-01-22
BE752897A (fr) 1971-01-04
GB1316830A (en) 1973-05-16

Similar Documents

Publication Publication Date Title
DE2031333C3 (de) Verfahren zum Herstellen eines Halbleiterbauelementes
DE2640525C2 (de) Verfahren zur Herstellung einer MIS-Halbleiterschaltungsanordnung
DE2544736C2 (de) Verfahren zum Entfernen von schnelldiffundierenden metallischen Verunreinigungen aus monokristallinem Silicium
DE1614283C3 (de) Verfahren zum Herstellen einer Halbleiteranordnung
DE1439935A1 (de) Halbleitereinrichtung und Verfahren zu deren Herstellung
DE2019655C2 (de) Verfahren zur Eindiffundierung eines den Leitungstyp verändernden Aktivators in einen Oberflächenbereich eines Halbleiterkörpers
DE1564191B2 (de) Verfahren zum herstellen einer integrierten halbleiterschaltung mit verschiedenen, gegeneinander und gegen ein gemeinsames siliziumsubstrat elektrisch isolierten schaltungselementen
DE1130932B (de) Verfahren zur Herstellung kleinflaechiger pn-UEbergaenge in Halbleiter-koerpern von einem Leitfaehigkeitstyp von Halbleiteranordnungen, z. B. Dioden oder Transistoren
DE1544214A1 (de) Verfahren zum Zuechten von duennen,schwach dotierten homogenen epitaktischen Siliziumschichten bei niedrigen Temperaturen,insbesondere zum Herstellen von UEbergaengen mit extrem niedrigem Widerstand in Flussrichtung
DE1087704B (de) Verfahren zur Herstellung von Halbleiteranordnungen mit wenigstens einem p-n-UEbergang
DE1489240B1 (de) Verfahren zum Herstellen von Halbleiterbauelementen
DE1944131A1 (de) Verfahren zum Herabsetzen der Stapelfehlerdichte in epitaktischen Schichten von Halbleiterbauelementen
DE2602705C3 (de) Photokathode vom Hl-V-Typ für das nahe Infrarot und Verfahren zu ihrer Herstellung
DE1489250B2 (de) Transistor mit mehreren Emitterzonen
DE1194500B (de) Halbleiterbauelement mit einer Mehrzahl von eingesetzten streifenfoermigen Zonen eines Leitfaehigkeitstyps und Verfahren zum Herstellen
DE1170082B (de) Verfahren zum Herstellen von Halbleiterbauelementen
DE1182750B (de) Verfahren zum Herstellen von Halbleiterbauelementen
DE2152057A1 (de) Verfahren zur Herstellung eines Halbleiteraufbaus
DE1464305B2 (de) Verfahren zum Herstellen von Halbleiterbauelementen sowie nach diesem Verfahren hergestellte Bauelemente
DE1644025A1 (de) Halbleiter-Anordnung mit diffundierten Zonenuebergaengen
DE1564958C3 (de) Integrierte Halbleiterschaltung mit einem hochohmigen einkristallinen Galliumarsenid-Substrat und Verfahren zu ihrer Herstellung
DE1285625C2 (de) Verfahren zur herstellung eines halbleiterbauelements
DE2021460A1 (de) Verfahren zur Herstellung von Halbleiteranordnungen
DE1564860A1 (de) Verfahren zur Herstellung von Halbleitervorrichtungen
DE1015937B (de) Verfahren zur Herstellung von Halbleitern mit p-n-Schichten

Legal Events

Date Code Title Description
C3 Grant after two publication steps (3rd publication)
8339 Ceased/non-payment of the annual fee