BE752897A - Procede permettant la fabrication d'un dispositif semiconducteur, et dispositif semiconducteur ainsi obtenu - Google Patents

Procede permettant la fabrication d'un dispositif semiconducteur, et dispositif semiconducteur ainsi obtenu

Info

Publication number
BE752897A
BE752897A BE752897DA BE752897A BE 752897 A BE752897 A BE 752897A BE 752897D A BE752897D A BE 752897DA BE 752897 A BE752897 A BE 752897A
Authority
BE
Belgium
Prior art keywords
semiconductor device
manufacture
process allowing
allowing
semiconductor
Prior art date
Application number
Other languages
English (en)
Original Assignee
Philips Nv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Nv filed Critical Philips Nv
Publication of BE752897A publication Critical patent/BE752897A/fr

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3063—Electrolytic etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/049—Equivalence and options
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/051—Etching
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/085—Isolated-integrated
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/135—Removal of substrate
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/145—Shaped junctions
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/977—Thinning or removal of substrate

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Weting (AREA)
  • Photovoltaic Devices (AREA)
  • Element Separation (AREA)
  • Electrodes Of Semiconductors (AREA)
BE752897D 1969-07-04 1970-07-02 Procede permettant la fabrication d'un dispositif semiconducteur, et dispositif semiconducteur ainsi obtenu BE752897A (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL6910274A NL6910274A (fr) 1969-07-04 1969-07-04

Publications (1)

Publication Number Publication Date
BE752897A true BE752897A (fr) 1971-01-04

Family

ID=19807388

Family Applications (1)

Application Number Title Priority Date Filing Date
BE752897D BE752897A (fr) 1969-07-04 1970-07-02 Procede permettant la fabrication d'un dispositif semiconducteur, et dispositif semiconducteur ainsi obtenu

Country Status (11)

Country Link
US (1) US3640807A (fr)
JP (1) JPS501985B1 (fr)
AT (1) AT322633B (fr)
BE (1) BE752897A (fr)
CH (1) CH512144A (fr)
DE (1) DE2031333C3 (fr)
ES (1) ES381370A1 (fr)
FR (1) FR2050507B1 (fr)
GB (1) GB1316830A (fr)
NL (1) NL6910274A (fr)
SE (1) SE368114B (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111895679A (zh) * 2020-09-10 2020-11-06 江西北冰洋实业有限公司 一种半导体制冷片安装机构

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3902979A (en) * 1974-06-24 1975-09-02 Westinghouse Electric Corp Insulator substrate with a thin mono-crystalline semiconductive layer and method of fabrication
US3962052A (en) * 1975-04-14 1976-06-08 International Business Machines Corporation Process for forming apertures in silicon bodies
US4033787A (en) * 1975-10-06 1977-07-05 Honeywell Inc. Fabrication of semiconductor devices utilizing ion implantation
US4054497A (en) * 1975-10-06 1977-10-18 Honeywell Inc. Method for electrolytically etching semiconductor material
JPS6047725B2 (ja) * 1977-06-14 1985-10-23 ソニー株式会社 フエライトの加工法
US4141621A (en) * 1977-08-05 1979-02-27 Honeywell Inc. Three layer waveguide for thin film lens fabrication
US4257061A (en) * 1977-10-17 1981-03-17 John Fluke Mfg. Co., Inc. Thermally isolated monolithic semiconductor die
NO843614L (no) * 1983-09-13 1986-06-23 Marconi Co Ltd Infra-roed detektor
US4554059A (en) * 1983-11-04 1985-11-19 Harris Corporation Electrochemical dielectric isolation technique
JPS6415913A (en) * 1987-07-09 1989-01-19 Mitsubishi Monsanto Chem Epitaxial growth method of substrate for high-brightness led
DE3889830D1 (de) * 1987-09-30 1994-07-07 Siemens Ag Verfahren zum Ätzen von (100) Silizium.
US4995953A (en) * 1989-10-30 1991-02-26 Motorola, Inc. Method of forming a semiconductor membrane using an electrochemical etch-stop
JP3151816B2 (ja) * 1990-08-06 2001-04-03 日産自動車株式会社 エッチング方法
US6500694B1 (en) 2000-03-22 2002-12-31 Ziptronix, Inc. Three dimensional device integration method and integrated device
US6984571B1 (en) 1999-10-01 2006-01-10 Ziptronix, Inc. Three dimensional device integration method and integrated device
US6902987B1 (en) 2000-02-16 2005-06-07 Ziptronix, Inc. Method for low temperature bonding and bonded structure
US6563133B1 (en) * 2000-08-09 2003-05-13 Ziptronix, Inc. Method of epitaxial-like wafer bonding at low temperature and bonded structure
US7109092B2 (en) 2003-05-19 2006-09-19 Ziptronix, Inc. Method of room temperature covalent bonding
US9465049B2 (en) * 2012-04-13 2016-10-11 James B. Colvin Apparatus and method for electronic sample preparation

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL153947B (nl) * 1967-02-25 1977-07-15 Philips Nv Werkwijze voor het vervaardigen van halfgeleiderinrichtingen, waarbij een selectief elektrolytisch etsproces wordt toegepast en halfgeleiderinrichting verkregen met toepassing van de werkwijze.
NL6706735A (fr) * 1967-05-13 1968-11-14

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111895679A (zh) * 2020-09-10 2020-11-06 江西北冰洋实业有限公司 一种半导体制冷片安装机构
CN111895679B (zh) * 2020-09-10 2022-04-01 江西北冰洋实业有限公司 一种半导体制冷片安装机构

Also Published As

Publication number Publication date
AT322633B (de) 1975-05-26
NL6910274A (fr) 1971-01-06
CH512144A (de) 1971-08-31
JPS501985B1 (fr) 1975-01-22
FR2050507B1 (fr) 1974-06-14
GB1316830A (en) 1973-05-16
SE368114B (fr) 1974-06-17
DE2031333A1 (de) 1971-01-21
DE2031333B2 (de) 1977-11-17
ES381370A1 (es) 1972-12-01
FR2050507A1 (fr) 1971-04-02
US3640807A (en) 1972-02-08
DE2031333C3 (de) 1978-07-13

Similar Documents

Publication Publication Date Title
BE769731A (fr) Procede permettant la fabrication d'un dispositif semiconducteur, et dispositif semiconducteur ainsi obtenu
BE752897A (fr) Procede permettant la fabrication d'un dispositif semiconducteur, et dispositif semiconducteur ainsi obtenu
BE744162A (fr) Procede d'encapsulage
BE834965A (fr) Procede pour fabriquer un dispositif semiconducteur et dispositif ainsi obtenu
BE758296A (fr) Procede de fabrication d'hexamethylenediamine
BE760707A (fr) Procede permettant la fabrication d'un dispositif semiconducteur muni d'un transistor a effet de champ a electro-porte isolee, et dispositif semiconducteur ainsi obtenu
BE757476A (fr) Procede d'oxydeshydrogenation
BE769732A (fr) Procede permettant la fabrication d'un dispositif semiconducteur, et dispositif semiconducteur ainsi obtenu
BE746989A (fr) Sandale ainsi que procede et dispositif pour sa fabrication
BE791930A (fr) Dispositif electroluminescent et procede pour sa fabrication
BE752608A (fr) Procede de fabrication d'un dispositif
BE778757A (fr) Procede permettant la fabrication d'un dispositif semiconducteur et dispositif ainsi fabrique
BE776319A (fr) Dispositif semiconducteur et procede permettant sa fabrication
BE775615A (fr) Procede permettant la fabrication d'un dispositif semiconducteur et dispositif semiconducteur ainsi fabrique
BE752479A (fr) Procede de fabrication de copolymerisats autoreticulants, thermodurcissables et diluables avec de l'eau
CH547828A (fr) Procede pour la fabrication d'un interpolymere d'acrylate.
BE794444A (fr) Procede pour la fabrication automatique d'elements de canaux, dispositif pour l'execution du procede et elements de canaux ainsi fabriques
BE748953A (fr) Procede permettant la fabrication d'un dispositif electronique sensibleau rayonnement, et dispositif ainsi obtenu
BE782285A (fr) Dispositif semiconducteur, et procede permettant sa fabrication
BE759667A (fr) Procede permettant la fabrication d'un dispositif semiconducteur, et dispositif semiconducteur obtenu par la mise en oeuvre de ce procede
BE772254A (fr) Procede de fabrication d'un dispositif semi-conducteur
BE758247A (fr) Procede pour la fabrication d'un agent fertilisant compose de n, mg et ca
BE759548R (fr) Procede et dispositif pour la fabrication continue de
FR2328283A1 (fr) Dispositif semiconducteur et procede permettant sa fabrication
BE746276A (fr) Procede de fabrication d'acetylene