BE760707A - Procede permettant la fabrication d'un dispositif semiconducteur muni d'un transistor a effet de champ a electro-porte isolee, et dispositif semiconducteur ainsi obtenu - Google Patents
Procede permettant la fabrication d'un dispositif semiconducteur muni d'un transistor a effet de champ a electro-porte isolee, et dispositif semiconducteur ainsi obtenuInfo
- Publication number
- BE760707A BE760707A BE760707A BE760707A BE760707A BE 760707 A BE760707 A BE 760707A BE 760707 A BE760707 A BE 760707A BE 760707 A BE760707 A BE 760707A BE 760707 A BE760707 A BE 760707A
- Authority
- BE
- Belgium
- Prior art keywords
- semiconductor device
- door
- manufacture
- effect transistor
- field
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title 2
- 230000005669 field effect Effects 0.000 title 1
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/02—Contacts, special
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/053—Field effect transistors fets
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB6290969 | 1969-12-24 |
Publications (1)
Publication Number | Publication Date |
---|---|
BE760707A true BE760707A (fr) | 1971-06-22 |
Family
ID=10488614
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
BE760707A BE760707A (fr) | 1969-12-24 | 1970-12-22 | Procede permettant la fabrication d'un dispositif semiconducteur muni d'un transistor a effet de champ a electro-porte isolee, et dispositif semiconducteur ainsi obtenu |
Country Status (11)
Country | Link |
---|---|
US (1) | US3739237A (fr) |
JP (1) | JPS4827506B1 (fr) |
AT (1) | AT323809B (fr) |
BE (1) | BE760707A (fr) |
CH (1) | CH519791A (fr) |
DE (1) | DE2060333C3 (fr) |
ES (1) | ES386734A1 (fr) |
FR (1) | FR2073494B1 (fr) |
GB (1) | GB1289740A (fr) |
NL (1) | NL7018547A (fr) |
SE (1) | SE355696B (fr) |
Families Citing this family (24)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
USRE28952E (en) * | 1971-03-17 | 1976-08-31 | Rca Corporation | Shaped riser on substrate step for promoting metal film continuity |
FR2184535B1 (fr) * | 1972-05-19 | 1980-03-21 | Commissariat Energie Atomique | |
US3895392A (en) * | 1973-04-05 | 1975-07-15 | Signetics Corp | Bipolar transistor structure having ion implanted region and method |
US3947866A (en) * | 1973-06-25 | 1976-03-30 | Signetics Corporation | Ion implanted resistor having controlled temperature coefficient and method |
US4065847A (en) * | 1974-01-04 | 1978-01-03 | Commissariat A L'energie Atomique | Method of fabrication of a charge-coupled device |
FR2257145B1 (fr) * | 1974-01-04 | 1976-11-26 | Commissariat Energie Atomique | |
JPS5532032B2 (fr) * | 1975-02-20 | 1980-08-22 | ||
JPS52156576A (en) * | 1976-06-23 | 1977-12-27 | Hitachi Ltd | Production of mis semiconductor device |
DE2631873C2 (de) * | 1976-07-15 | 1986-07-31 | Siemens AG, 1000 Berlin und 8000 München | Verfahren zur Herstellung eines Halbleiterbauelements mit einem Schottky-Kontakt auf einem zu einem anderen Bereich justierten Gatebereich und mit kleinem Serienwiderstand |
US4224733A (en) * | 1977-10-11 | 1980-09-30 | Fujitsu Limited | Ion implantation method |
US4190466A (en) * | 1977-12-22 | 1980-02-26 | International Business Machines Corporation | Method for making a bipolar transistor structure utilizing self-passivating diffusion sources |
JPS5553462A (en) * | 1978-10-13 | 1980-04-18 | Int Rectifier Corp | Mosfet element |
US5191396B1 (en) * | 1978-10-13 | 1995-12-26 | Int Rectifier Corp | High power mosfet with low on-resistance and high breakdown voltage |
US4523368A (en) * | 1980-03-03 | 1985-06-18 | Raytheon Company | Semiconductor devices and manufacturing methods |
JPS5827363A (ja) * | 1981-08-10 | 1983-02-18 | Fujitsu Ltd | 電界効果トランジスタの製造法 |
US4499653A (en) * | 1983-11-03 | 1985-02-19 | Westinghouse Electric Corp. | Small dimension field effect transistor using phosphorous doped silicon glass reflow process |
NL8400789A (nl) * | 1984-03-13 | 1985-10-01 | Philips Nv | Werkwijze omvattende het gelijktijdig vervaardigen van halfgeleidergebieden met verschillende dotering. |
US4748103A (en) * | 1986-03-21 | 1988-05-31 | Advanced Power Technology | Mask-surrogate semiconductor process employing dopant protective region |
US5139869A (en) * | 1988-09-01 | 1992-08-18 | Wolfgang Euen | Thin dielectric layer on a substrate |
US5169796A (en) * | 1991-09-19 | 1992-12-08 | Teledyne Industries, Inc. | Process for fabricating self-aligned metal gate field effect transistors |
US5869371A (en) * | 1995-06-07 | 1999-02-09 | Stmicroelectronics, Inc. | Structure and process for reducing the on-resistance of mos-gated power devices |
US5843827A (en) * | 1996-09-30 | 1998-12-01 | Lucent Technologies Inc. | Method of reducing dielectric damage from plasma etch charging |
US5869727A (en) * | 1997-08-08 | 1999-02-09 | Osi Specialties, Inc. | Vacuum process for the manufacture of siloxane-oxyalkylene copolymers |
JP3769208B2 (ja) * | 2001-06-04 | 2006-04-19 | 株式会社東芝 | 半導体装置の製造方法と半導体装置 |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3451912A (en) * | 1966-07-15 | 1969-06-24 | Ibm | Schottky-barrier diode formed by sputter-deposition processes |
US3472712A (en) * | 1966-10-27 | 1969-10-14 | Hughes Aircraft Co | Field-effect device with insulated gate |
GB1244225A (en) * | 1968-12-31 | 1971-08-25 | Associated Semiconductor Mft | Improvements in and relating to methods of manufacturing semiconductor devices |
-
1969
- 1969-12-24 GB GB6290969A patent/GB1289740A/en not_active Expired
-
1970
- 1970-12-08 DE DE2060333A patent/DE2060333C3/de not_active Expired
- 1970-12-18 US US00099616A patent/US3739237A/en not_active Expired - Lifetime
- 1970-12-19 NL NL7018547A patent/NL7018547A/xx unknown
- 1970-12-21 SE SE17311/70A patent/SE355696B/xx unknown
- 1970-12-21 CH CH1888570A patent/CH519791A/de not_active IP Right Cessation
- 1970-12-21 AT AT1146770A patent/AT323809B/de not_active IP Right Cessation
- 1970-12-21 JP JP45115000A patent/JPS4827506B1/ja active Pending
- 1970-12-22 ES ES386734A patent/ES386734A1/es not_active Expired
- 1970-12-22 BE BE760707A patent/BE760707A/fr unknown
- 1970-12-23 FR FR7046397A patent/FR2073494B1/fr not_active Expired
Also Published As
Publication number | Publication date |
---|---|
SE355696B (fr) | 1973-04-30 |
FR2073494B1 (fr) | 1975-01-10 |
JPS4827506B1 (fr) | 1973-08-23 |
DE2060333B2 (de) | 1977-10-13 |
US3739237A (en) | 1973-06-12 |
NL7018547A (fr) | 1971-06-28 |
DE2060333A1 (de) | 1971-07-01 |
AT323809B (de) | 1975-07-25 |
ES386734A1 (es) | 1973-03-16 |
GB1289740A (fr) | 1972-09-20 |
CH519791A (de) | 1972-02-29 |
FR2073494A1 (fr) | 1971-10-01 |
DE2060333C3 (de) | 1978-06-01 |
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