FR2073494A1 - - Google Patents

Info

Publication number
FR2073494A1
FR2073494A1 FR7046397A FR7046397A FR2073494A1 FR 2073494 A1 FR2073494 A1 FR 2073494A1 FR 7046397 A FR7046397 A FR 7046397A FR 7046397 A FR7046397 A FR 7046397A FR 2073494 A1 FR2073494 A1 FR 2073494A1
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7046397A
Other versions
FR2073494B1 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Publication of FR2073494A1 publication Critical patent/FR2073494A1/fr
Application granted granted Critical
Publication of FR2073494B1 publication Critical patent/FR2073494B1/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/02—Contacts, special
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/053—Field effect transistors fets

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Thin Film Transistor (AREA)
FR7046397A 1969-12-24 1970-12-23 Expired FR2073494B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB6290969 1969-12-24

Publications (2)

Publication Number Publication Date
FR2073494A1 true FR2073494A1 (fr) 1971-10-01
FR2073494B1 FR2073494B1 (fr) 1975-01-10

Family

ID=10488614

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7046397A Expired FR2073494B1 (fr) 1969-12-24 1970-12-23

Country Status (11)

Country Link
US (1) US3739237A (fr)
JP (1) JPS4827506B1 (fr)
AT (1) AT323809B (fr)
BE (1) BE760707A (fr)
CH (1) CH519791A (fr)
DE (1) DE2060333C3 (fr)
ES (1) ES386734A1 (fr)
FR (1) FR2073494B1 (fr)
GB (1) GB1289740A (fr)
NL (1) NL7018547A (fr)
SE (1) SE355696B (fr)

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
USRE28952E (en) * 1971-03-17 1976-08-31 Rca Corporation Shaped riser on substrate step for promoting metal film continuity
FR2184535B1 (fr) * 1972-05-19 1980-03-21 Commissariat Energie Atomique
US3895392A (en) * 1973-04-05 1975-07-15 Signetics Corp Bipolar transistor structure having ion implanted region and method
US3947866A (en) * 1973-06-25 1976-03-30 Signetics Corporation Ion implanted resistor having controlled temperature coefficient and method
US4065847A (en) * 1974-01-04 1978-01-03 Commissariat A L'energie Atomique Method of fabrication of a charge-coupled device
FR2257145B1 (fr) * 1974-01-04 1976-11-26 Commissariat Energie Atomique
JPS5532032B2 (fr) * 1975-02-20 1980-08-22
JPS52156576A (en) * 1976-06-23 1977-12-27 Hitachi Ltd Production of mis semiconductor device
DE2631873C2 (de) * 1976-07-15 1986-07-31 Siemens AG, 1000 Berlin und 8000 München Verfahren zur Herstellung eines Halbleiterbauelements mit einem Schottky-Kontakt auf einem zu einem anderen Bereich justierten Gatebereich und mit kleinem Serienwiderstand
US4224733A (en) * 1977-10-11 1980-09-30 Fujitsu Limited Ion implantation method
US4190466A (en) * 1977-12-22 1980-02-26 International Business Machines Corporation Method for making a bipolar transistor structure utilizing self-passivating diffusion sources
JPS5553462A (en) * 1978-10-13 1980-04-18 Int Rectifier Corp Mosfet element
US5191396B1 (en) * 1978-10-13 1995-12-26 Int Rectifier Corp High power mosfet with low on-resistance and high breakdown voltage
US4523368A (en) * 1980-03-03 1985-06-18 Raytheon Company Semiconductor devices and manufacturing methods
JPS5827363A (ja) * 1981-08-10 1983-02-18 Fujitsu Ltd 電界効果トランジスタの製造法
US4499653A (en) * 1983-11-03 1985-02-19 Westinghouse Electric Corp. Small dimension field effect transistor using phosphorous doped silicon glass reflow process
NL8400789A (nl) * 1984-03-13 1985-10-01 Philips Nv Werkwijze omvattende het gelijktijdig vervaardigen van halfgeleidergebieden met verschillende dotering.
US4748103A (en) * 1986-03-21 1988-05-31 Advanced Power Technology Mask-surrogate semiconductor process employing dopant protective region
US5139869A (en) * 1988-09-01 1992-08-18 Wolfgang Euen Thin dielectric layer on a substrate
US5169796A (en) * 1991-09-19 1992-12-08 Teledyne Industries, Inc. Process for fabricating self-aligned metal gate field effect transistors
US5869371A (en) * 1995-06-07 1999-02-09 Stmicroelectronics, Inc. Structure and process for reducing the on-resistance of mos-gated power devices
US5843827A (en) * 1996-09-30 1998-12-01 Lucent Technologies Inc. Method of reducing dielectric damage from plasma etch charging
US5869727A (en) * 1997-08-08 1999-02-09 Osi Specialties, Inc. Vacuum process for the manufacture of siloxane-oxyalkylene copolymers
JP3769208B2 (ja) * 2001-06-04 2006-04-19 株式会社東芝 半導体装置の製造方法と半導体装置

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL6709110A (fr) * 1966-07-15 1968-01-16
GB1139623A (en) * 1966-10-27 1969-01-08 Hughes Aircraft Co Field-effect device with insulated gate
FR2027452A1 (fr) * 1968-12-31 1970-09-25 Philips Nv

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL6709110A (fr) * 1966-07-15 1968-01-16
GB1139623A (en) * 1966-10-27 1969-01-08 Hughes Aircraft Co Field-effect device with insulated gate
FR2027452A1 (fr) * 1968-12-31 1970-09-25 Philips Nv

Non-Patent Citations (11)

* Cited by examiner, † Cited by third party
Title
(REVUE AMERICAINE"PROCEEDINGS OF THE IEEE",VOLUME 57,MAI 1969."SB-IGFET,II:AN ION IMPLANTED IGFET USING SCHOTTKY BARRIERS", M.P.LEPSELTER ET AL.,PAGES 812-813 *
*REVUE INTERNATIONALE" SOLID-STATE ELECTRONIC",VOLUME 7,JUIN 1964,"MOLYBDE NUM MASKING OF ION BOMBARDMENT DOPING OF SILICON", L.AMADEI ET A.GOETZBERGER ,PAGE 487 *
*REVUE INTERNATIONALE"THIN SOLID FILMS",VOLUME 4 JUILLET 1969,EFFECT OF ION *
COLLINS ET AL. ,PAGES 41-45) *
IGFET USING SCHOTTKY BARRIERS", M.P.LEPSELTER ET AL.,PAGES 812-813 *
JUILLET 1969,EFFECT OF ION BOMBARDMENT ON THE ADHESION OF ALUMINIUM FILMS ON GLASS", L.E. *
REVUE AMERICAINE"PROCEEDINGS OF THE IEEE",VOLUME 57,MAI 1969."SB-IGFET,II:AN ION IMPLANTED *
REVUE INTERNATIONALE" *
REVUE INTERNATIONALE"THIN SOLID FILMS",VOLUME 4 *
SILICON", L.AMADEI ET A.GOETZBERGER ,PAGE 487 *
SOLID-STATE ELECTRONIC",VOLUME 7,JUIN 1964,"MOLYBDE NUM MASKING OF ION BOMBARDMENT DOPING OF *

Also Published As

Publication number Publication date
US3739237A (en) 1973-06-12
GB1289740A (fr) 1972-09-20
DE2060333A1 (de) 1971-07-01
FR2073494B1 (fr) 1975-01-10
DE2060333B2 (de) 1977-10-13
SE355696B (fr) 1973-04-30
NL7018547A (fr) 1971-06-28
BE760707A (fr) 1971-06-22
ES386734A1 (es) 1973-03-16
AT323809B (de) 1975-07-25
DE2060333C3 (de) 1978-06-01
CH519791A (de) 1972-02-29
JPS4827506B1 (fr) 1973-08-23

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Legal Events

Date Code Title Description
ST Notification of lapse