BE771608A - Transistor a effet de champ et procede pour le former - Google Patents

Transistor a effet de champ et procede pour le former

Info

Publication number
BE771608A
BE771608A BE771608A BE771608A BE771608A BE 771608 A BE771608 A BE 771608A BE 771608 A BE771608 A BE 771608A BE 771608 A BE771608 A BE 771608A BE 771608 A BE771608 A BE 771608A
Authority
BE
Belgium
Prior art keywords
forming
field
effect transistor
transistor
effect
Prior art date
Application number
BE771608A
Other languages
English (en)
Inventor
R R Burgess
E M Cheskis
Original Assignee
Motorola Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Motorola Inc filed Critical Motorola Inc
Publication of BE771608A publication Critical patent/BE771608A/fr

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Thin Film Transistor (AREA)
BE771608A 1970-08-21 1971-08-20 Transistor a effet de champ et procede pour le former BE771608A (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US6585870A 1970-08-21 1970-08-21
US6585970A 1970-08-21 1970-08-21

Publications (1)

Publication Number Publication Date
BE771608A true BE771608A (fr) 1972-02-21

Family

ID=26746091

Family Applications (1)

Application Number Title Priority Date Filing Date
BE771608A BE771608A (fr) 1970-08-21 1971-08-20 Transistor a effet de champ et procede pour le former

Country Status (5)

Country Link
AU (1) AU3258271A (fr)
BE (1) BE771608A (fr)
DE (2) DE2142050A1 (fr)
FR (1) FR2103427A1 (fr)
NL (1) NL7111459A (fr)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1360770A (en) * 1972-05-30 1974-07-24 Westinghouse Electric Corp N-channel mos transistor
US3943542A (en) * 1974-11-06 1976-03-09 International Business Machines, Corporation High reliability, low leakage, self-aligned silicon gate FET and method of fabricating same
CH657712A5 (de) * 1978-03-08 1986-09-15 Hitachi Ltd Referenzspannungserzeuger.
US5159260A (en) * 1978-03-08 1992-10-27 Hitachi, Ltd. Reference voltage generator device
JPS55132055A (en) * 1979-03-30 1980-10-14 Nec Corp Mos integrated circuit
US5260593A (en) * 1991-12-10 1993-11-09 Micron Technology, Inc. Semiconductor floating gate device having improved channel-floating gate interaction

Also Published As

Publication number Publication date
DE2142050A1 (de) 1972-03-30
FR2103427A1 (fr) 1972-04-14
NL7111459A (fr) 1972-02-23
DE7132084U (de) 1972-01-05
AU3258271A (en) 1973-02-22

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