AU3258271A - Semiconductor device and method of manufacture - Google Patents

Semiconductor device and method of manufacture

Info

Publication number
AU3258271A
AU3258271A AU32582/71A AU3258271A AU3258271A AU 3258271 A AU3258271 A AU 3258271A AU 32582/71 A AU32582/71 A AU 32582/71A AU 3258271 A AU3258271 A AU 3258271A AU 3258271 A AU3258271 A AU 3258271A
Authority
AU
Australia
Prior art keywords
manufacture
semiconductor device
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
AU32582/71A
Other languages
English (en)
Inventor
REGINALD BURGES and EUGENE MARTIN CHESKIN RONALD
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Motorola Solutions Inc
Original Assignee
Motorola Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Motorola Inc filed Critical Motorola Inc
Publication of AU3258271A publication Critical patent/AU3258271A/en
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Thin Film Transistor (AREA)
AU32582/71A 1970-08-21 1971-08-20 Semiconductor device and method of manufacture Expired AU3258271A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US6585970A 1970-08-21 1970-08-21
US6585870A 1970-08-21 1970-08-21

Publications (1)

Publication Number Publication Date
AU3258271A true AU3258271A (en) 1973-02-22

Family

ID=26746091

Family Applications (1)

Application Number Title Priority Date Filing Date
AU32582/71A Expired AU3258271A (en) 1970-08-21 1971-08-20 Semiconductor device and method of manufacture

Country Status (5)

Country Link
AU (1) AU3258271A (fr)
BE (1) BE771608A (fr)
DE (2) DE7132084U (fr)
FR (1) FR2103427A1 (fr)
NL (1) NL7111459A (fr)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1360770A (en) * 1972-05-30 1974-07-24 Westinghouse Electric Corp N-channel mos transistor
US3943542A (en) * 1974-11-06 1976-03-09 International Business Machines, Corporation High reliability, low leakage, self-aligned silicon gate FET and method of fabricating same
US5159260A (en) * 1978-03-08 1992-10-27 Hitachi, Ltd. Reference voltage generator device
CH657712A5 (de) 1978-03-08 1986-09-15 Hitachi Ltd Referenzspannungserzeuger.
JPS55132055A (en) * 1979-03-30 1980-10-14 Nec Corp Mos integrated circuit
US5260593A (en) * 1991-12-10 1993-11-09 Micron Technology, Inc. Semiconductor floating gate device having improved channel-floating gate interaction

Also Published As

Publication number Publication date
DE2142050A1 (de) 1972-03-30
BE771608A (fr) 1972-02-21
DE7132084U (de) 1972-01-05
FR2103427A1 (fr) 1972-04-14
NL7111459A (fr) 1972-02-23

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