DE19964382B4 - Verwendung einer Beschichtungszusammensetzung zur Herstellung einer nicht reflektierenden Beschichtung und Verfahren zur Herstellung der Beschichtungszusammensetzung - Google Patents

Verwendung einer Beschichtungszusammensetzung zur Herstellung einer nicht reflektierenden Beschichtung und Verfahren zur Herstellung der Beschichtungszusammensetzung Download PDF

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Publication number
DE19964382B4
DE19964382B4 DE19964382A DE19964382A DE19964382B4 DE 19964382 B4 DE19964382 B4 DE 19964382B4 DE 19964382 A DE19964382 A DE 19964382A DE 19964382 A DE19964382 A DE 19964382A DE 19964382 B4 DE19964382 B4 DE 19964382B4
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Germany
Prior art keywords
hydrogen
polymer
formula
use according
anthracene
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE19964382A
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German (de)
English (en)
Inventor
Min-Ho Jung
Sung-Eun Hong
Ki-Ho Baik
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
SK Hynix Inc
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Hyundai Electronics Industries Co Ltd
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Filing date
Publication date
Application filed by Hyundai Electronics Industries Co Ltd filed Critical Hyundai Electronics Industries Co Ltd
Application granted granted Critical
Publication of DE19964382B4 publication Critical patent/DE19964382B4/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F20/00—Homopolymers and copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride, ester, amide, imide or nitrile thereof
    • C08F20/02—Monocarboxylic acids having less than ten carbon atoms, Derivatives thereof
    • C08F20/10—Esters
    • C08F20/12—Esters of monohydric alcohols or phenols
    • C08F20/16—Esters of monohydric alcohols or phenols of phenols or of alcohols containing two or more carbon atoms
    • C08F20/18—Esters of monohydric alcohols or phenols of phenols or of alcohols containing two or more carbon atoms with acrylic or methacrylic acids
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C69/00—Esters of carboxylic acids; Esters of carbonic or haloformic acids
    • C07C69/017—Esters of hydroxy compounds having the esterified hydroxy group bound to a carbon atom of a six-membered aromatic ring
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C69/00—Esters of carboxylic acids; Esters of carbonic or haloformic acids
    • C07C69/52—Esters of acyclic unsaturated carboxylic acids having the esterified carboxyl group bound to an acyclic carbon atom
    • C07C69/533—Monocarboxylic acid esters having only one carbon-to-carbon double bond
    • C07C69/54—Acrylic acid esters; Methacrylic acid esters
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C2603/00—Systems containing at least three condensed rings
    • C07C2603/02—Ortho- or ortho- and peri-condensed systems
    • C07C2603/04—Ortho- or ortho- and peri-condensed systems containing three rings
    • C07C2603/22—Ortho- or ortho- and peri-condensed systems containing three rings containing only six-membered rings
    • C07C2603/24—Anthracenes; Hydrogenated anthracenes
DE19964382A 1999-04-23 1999-12-23 Verwendung einer Beschichtungszusammensetzung zur Herstellung einer nicht reflektierenden Beschichtung und Verfahren zur Herstellung der Beschichtungszusammensetzung Expired - Fee Related DE19964382B4 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
KR10-1999-0014763A KR100395904B1 (ko) 1999-04-23 1999-04-23 유기 반사방지 중합체 및 그의 제조방법
KR99-14763 1999-04-23
DE19962784A DE19962784A1 (de) 1999-04-23 1999-12-23 Organisches, nicht reflektierendes Beschichtungsmaterial und dessen Herstellung

Publications (1)

Publication Number Publication Date
DE19964382B4 true DE19964382B4 (de) 2008-08-14

Family

ID=19582078

Family Applications (2)

Application Number Title Priority Date Filing Date
DE19962784A Ceased DE19962784A1 (de) 1999-04-23 1999-12-23 Organisches, nicht reflektierendes Beschichtungsmaterial und dessen Herstellung
DE19964382A Expired - Fee Related DE19964382B4 (de) 1999-04-23 1999-12-23 Verwendung einer Beschichtungszusammensetzung zur Herstellung einer nicht reflektierenden Beschichtung und Verfahren zur Herstellung der Beschichtungszusammensetzung

Family Applications Before (1)

Application Number Title Priority Date Filing Date
DE19962784A Ceased DE19962784A1 (de) 1999-04-23 1999-12-23 Organisches, nicht reflektierendes Beschichtungsmaterial und dessen Herstellung

Country Status (10)

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US (2) US6368768B1 (US06368768-20020409-C00052.png)
JP (1) JP3851476B2 (US06368768-20020409-C00052.png)
KR (1) KR100395904B1 (US06368768-20020409-C00052.png)
CN (1) CN1215094C (US06368768-20020409-C00052.png)
DE (2) DE19962784A1 (US06368768-20020409-C00052.png)
FR (4) FR2792633B1 (US06368768-20020409-C00052.png)
GB (1) GB2349148B (US06368768-20020409-C00052.png)
IT (1) IT1308674B1 (US06368768-20020409-C00052.png)
NL (1) NL1014997C2 (US06368768-20020409-C00052.png)
TW (1) TW546318B (US06368768-20020409-C00052.png)

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KR100427440B1 (ko) * 1999-12-23 2004-04-17 주식회사 하이닉스반도체 유기 반사방지 화합물 및 그의 제조방법
KR100355604B1 (ko) * 1999-12-23 2002-10-12 주식회사 하이닉스반도체 난반사 방지막용 중합체와 그 제조방법
KR100549574B1 (ko) * 1999-12-30 2006-02-08 주식회사 하이닉스반도체 유기 반사 방지막용 중합체 및 그의 제조방법
US6686124B1 (en) * 2000-03-14 2004-02-03 International Business Machines Corporation Multifunctional polymeric materials and use thereof
KR100687851B1 (ko) * 2000-06-30 2007-02-27 주식회사 하이닉스반도체 유기반사방지막 조성물 및 그의 제조방법
KR100721181B1 (ko) * 2000-06-30 2007-05-23 주식회사 하이닉스반도체 유기반사방지막 조성물 및 그의 제조방법
KR100687850B1 (ko) * 2000-06-30 2007-02-27 주식회사 하이닉스반도체 유기반사방지막 조성물 및 그의 제조방법
KR100721182B1 (ko) * 2000-06-30 2007-05-23 주식회사 하이닉스반도체 유기반사방지막 조성물 및 그의 제조방법
KR100574486B1 (ko) * 2000-06-30 2006-04-27 주식회사 하이닉스반도체 유기반사방지막 조성물 및 그의 제조방법
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US6605394B2 (en) 2001-05-03 2003-08-12 Applied Materials, Inc. Organic bottom antireflective coating for high performance mask making using optical imaging
KR20020090489A (ko) * 2001-05-28 2002-12-05 금호석유화학 주식회사 화학증폭형 레지스트용 중합체 및 이를 함유한 화학증폭형레지스트 조성물
KR100351459B1 (ko) * 2001-05-30 2002-09-05 주식회사 하이닉스반도체 유기 반사방지 중합체 및 그의 제조방법
KR100351458B1 (ko) * 2001-05-30 2002-09-05 주식회사 하이닉스반도체 유기 반사방지 중합체 및 그의 제조방법
US6703169B2 (en) 2001-07-23 2004-03-09 Applied Materials, Inc. Method of preparing optically imaged high performance photomasks
JP2004206082A (ja) * 2002-11-20 2004-07-22 Rohm & Haas Electronic Materials Llc 多層フォトレジスト系
EP1422566A1 (en) * 2002-11-20 2004-05-26 Shipley Company, L.L.C. Multilayer photoresist systems
US7361447B2 (en) 2003-07-30 2008-04-22 Hynix Semiconductor Inc. Photoresist polymer and photoresist composition containing the same
KR100636938B1 (ko) * 2003-09-29 2006-10-19 주식회사 하이닉스반도체 포토레지스트 조성물
JP2005314453A (ja) * 2004-04-27 2005-11-10 Sumitomo Chemical Co Ltd アクリル樹脂及び該樹脂を含有する粘着剤
KR101156973B1 (ko) * 2005-03-02 2012-06-20 주식회사 동진쎄미켐 유기 반사방지막 형성용 유기 중합체 및 이를 포함하는 유기 조성물
EP1762895B1 (en) * 2005-08-29 2016-02-24 Rohm and Haas Electronic Materials, L.L.C. Antireflective Hard Mask Compositions
KR100703007B1 (ko) 2005-11-17 2007-04-06 삼성전자주식회사 감광성 유기 반사 방지막 형성용 조성물 및 이를 이용한패턴 형성 방법
KR100871770B1 (ko) * 2007-09-12 2008-12-05 주식회사 효성 안트라세닐 벤질기 발색단을 포함하는 공중합체, 상기공중합체의 제조방법, 상기 공중합체를 포함하는유기반사방지막 조성물 및 상기 조성물을 포함하는유기반사방지막
KR100920886B1 (ko) * 2007-12-13 2009-10-09 주식회사 효성 현상 가능한 유기 반사방지막 형성용 조성물 및 이로부터형성된 유기 반사방지막
KR100952465B1 (ko) * 2007-12-18 2010-04-13 제일모직주식회사 방향족 (메타)아크릴레이트 화합물 및 감광성 고분자, 및레지스트 조성물
KR101585992B1 (ko) * 2007-12-20 2016-01-19 삼성전자주식회사 반사방지 코팅용 고분자, 반사방지 코팅용 조성물 및 이를 이용한 반도체 장치의 패턴 형성 방법
KR100975913B1 (ko) * 2008-10-31 2010-08-13 한국전자통신연구원 유기 박막 트랜지스터용 조성물, 이를 이용하여 형성된 유기 박막 트랜지스터 및 그 형성방법
CN105732883B (zh) * 2016-03-01 2018-07-03 中国科学技术大学 一种发射室温磷光的水性聚丙烯酸酯的制备方法

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EP0418917A2 (en) * 1989-09-22 1991-03-27 National Starch and Chemical Investment Holding Corporation Monomers and polymers containing acetal and aldehyde groups
FR2791056A1 (fr) * 1999-03-15 2000-09-22 Hyundai Electronics Ind Anthracenylmethyl(meth)acrylates, polymeres qu'ils permettent de preparer et revetements anti-reflechissants les contenant
EP0813114B1 (en) * 1996-06-11 2004-02-18 Shipley Company LLC Antireflective coating compositions

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EP0418917A2 (en) * 1989-09-22 1991-03-27 National Starch and Chemical Investment Holding Corporation Monomers and polymers containing acetal and aldehyde groups
EP0813114B1 (en) * 1996-06-11 2004-02-18 Shipley Company LLC Antireflective coating compositions
FR2791056A1 (fr) * 1999-03-15 2000-09-22 Hyundai Electronics Ind Anthracenylmethyl(meth)acrylates, polymeres qu'ils permettent de preparer et revetements anti-reflechissants les contenant

Also Published As

Publication number Publication date
JP2001098024A (ja) 2001-04-10
ITTO991099A0 (it) 1999-12-15
US6368768B1 (en) 2002-04-09
FR2793254A1 (fr) 2000-11-10
ITTO991099A1 (it) 2001-06-15
US20020132183A1 (en) 2002-09-19
NL1014997C2 (nl) 2001-06-26
GB9927833D0 (en) 2000-01-26
KR100395904B1 (ko) 2003-08-27
DE19962784A1 (de) 2000-10-26
IT1308674B1 (it) 2002-01-09
FR2792633A1 (fr) 2000-10-27
FR2793254B1 (fr) 2006-09-22
GB2349148B (en) 2004-08-04
FR2793244A1 (fr) 2000-11-10
CN1215094C (zh) 2005-08-17
GB2349148A (en) 2000-10-25
TW546318B (en) 2003-08-11
FR2793255B1 (fr) 2006-09-22
NL1014997A1 (nl) 2000-10-24
FR2792633B1 (fr) 2007-06-08
CN1271720A (zh) 2000-11-01
FR2793255A1 (fr) 2000-11-10
JP3851476B2 (ja) 2006-11-29
KR20000067184A (ko) 2000-11-15

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