IT1308674B1 - Materiale organico di rivestimento anti-riflettente e procedimento per la sua preparazione. - Google Patents

Materiale organico di rivestimento anti-riflettente e procedimento per la sua preparazione.

Info

Publication number
IT1308674B1
IT1308674B1 IT1999TO001099A ITTO991099A IT1308674B1 IT 1308674 B1 IT1308674 B1 IT 1308674B1 IT 1999TO001099 A IT1999TO001099 A IT 1999TO001099A IT TO991099 A ITTO991099 A IT TO991099A IT 1308674 B1 IT1308674 B1 IT 1308674B1
Authority
IT
Italy
Prior art keywords
procedure
preparation
coating material
reflective coating
organic anti
Prior art date
Application number
IT1999TO001099A
Other languages
English (en)
Inventor
Sung-Eun Hong
Min-Ho Jung
Ki-Ho Baik
Original Assignee
Hyundai Electronics Ind
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hyundai Electronics Ind filed Critical Hyundai Electronics Ind
Publication of ITTO991099A0 publication Critical patent/ITTO991099A0/it
Publication of ITTO991099A1 publication Critical patent/ITTO991099A1/it
Application granted granted Critical
Publication of IT1308674B1 publication Critical patent/IT1308674B1/it

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F20/00—Homopolymers and copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride, ester, amide, imide or nitrile thereof
    • C08F20/02—Monocarboxylic acids having less than ten carbon atoms, Derivatives thereof
    • C08F20/10—Esters
    • C08F20/12—Esters of monohydric alcohols or phenols
    • C08F20/16—Esters of monohydric alcohols or phenols of phenols or of alcohols containing two or more carbon atoms
    • C08F20/18—Esters of monohydric alcohols or phenols of phenols or of alcohols containing two or more carbon atoms with acrylic or methacrylic acids
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C69/00—Esters of carboxylic acids; Esters of carbonic or haloformic acids
    • C07C69/017—Esters of hydroxy compounds having the esterified hydroxy group bound to a carbon atom of a six-membered aromatic ring
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C69/00—Esters of carboxylic acids; Esters of carbonic or haloformic acids
    • C07C69/52—Esters of acyclic unsaturated carboxylic acids having the esterified carboxyl group bound to an acyclic carbon atom
    • C07C69/533—Monocarboxylic acid esters having only one carbon-to-carbon double bond
    • C07C69/54—Acrylic acid esters; Methacrylic acid esters
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C2603/00—Systems containing at least three condensed rings
    • C07C2603/02—Ortho- or ortho- and peri-condensed systems
    • C07C2603/04—Ortho- or ortho- and peri-condensed systems containing three rings
    • C07C2603/22—Ortho- or ortho- and peri-condensed systems containing three rings containing only six-membered rings
    • C07C2603/24—Anthracenes; Hydrogenated anthracenes

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
  • Materials For Photolithography (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Paints Or Removers (AREA)
  • Laminated Bodies (AREA)
IT1999TO001099A 1999-04-23 1999-12-15 Materiale organico di rivestimento anti-riflettente e procedimento per la sua preparazione. IT1308674B1 (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR10-1999-0014763A KR100395904B1 (ko) 1999-04-23 1999-04-23 유기 반사방지 중합체 및 그의 제조방법

Publications (3)

Publication Number Publication Date
ITTO991099A0 ITTO991099A0 (it) 1999-12-15
ITTO991099A1 ITTO991099A1 (it) 2001-06-15
IT1308674B1 true IT1308674B1 (it) 2002-01-09

Family

ID=19582078

Family Applications (1)

Application Number Title Priority Date Filing Date
IT1999TO001099A IT1308674B1 (it) 1999-04-23 1999-12-15 Materiale organico di rivestimento anti-riflettente e procedimento per la sua preparazione.

Country Status (10)

Country Link
US (2) US6368768B1 (it)
JP (1) JP3851476B2 (it)
KR (1) KR100395904B1 (it)
CN (1) CN1215094C (it)
DE (2) DE19962784A1 (it)
FR (4) FR2792633B1 (it)
GB (1) GB2349148B (it)
IT (1) IT1308674B1 (it)
NL (1) NL1014997C2 (it)
TW (1) TW546318B (it)

Families Citing this family (37)

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US6528235B2 (en) 1991-11-15 2003-03-04 Shipley Company, L.L.C. Antihalation compositions
US6773864B1 (en) 1991-11-15 2004-08-10 Shipley Company, L.L.C. Antihalation compositions
US6472128B2 (en) * 1996-04-30 2002-10-29 Shipley Company, L.L.C. Antihalation compositions
US6165697A (en) * 1991-11-15 2000-12-26 Shipley Company, L.L.C. Antihalation compositions
KR100465864B1 (ko) * 1999-03-15 2005-01-24 주식회사 하이닉스반도체 유기 난반사방지 중합체 및 그의 제조방법
US6890448B2 (en) * 1999-06-11 2005-05-10 Shipley Company, L.L.C. Antireflective hard mask compositions
KR100310252B1 (ko) * 1999-06-22 2001-11-14 박종섭 유기 반사방지 중합체 및 그의 제조방법
KR100355604B1 (ko) * 1999-12-23 2002-10-12 주식회사 하이닉스반도체 난반사 방지막용 중합체와 그 제조방법
KR100427440B1 (ko) * 1999-12-23 2004-04-17 주식회사 하이닉스반도체 유기 반사방지 화합물 및 그의 제조방법
KR100549574B1 (ko) * 1999-12-30 2006-02-08 주식회사 하이닉스반도체 유기 반사 방지막용 중합체 및 그의 제조방법
US6686124B1 (en) * 2000-03-14 2004-02-03 International Business Machines Corporation Multifunctional polymeric materials and use thereof
KR100687851B1 (ko) * 2000-06-30 2007-02-27 주식회사 하이닉스반도체 유기반사방지막 조성물 및 그의 제조방법
KR100721182B1 (ko) * 2000-06-30 2007-05-23 주식회사 하이닉스반도체 유기반사방지막 조성물 및 그의 제조방법
KR100574486B1 (ko) * 2000-06-30 2006-04-27 주식회사 하이닉스반도체 유기반사방지막 조성물 및 그의 제조방법
KR100721181B1 (ko) * 2000-06-30 2007-05-23 주식회사 하이닉스반도체 유기반사방지막 조성물 및 그의 제조방법
KR100687850B1 (ko) * 2000-06-30 2007-02-27 주식회사 하이닉스반도체 유기반사방지막 조성물 및 그의 제조방법
TW576949B (en) 2000-08-17 2004-02-21 Shipley Co Llc Antireflective coatings with increased etch rates
KR100734249B1 (ko) * 2000-09-07 2007-07-02 삼성전자주식회사 축합환의 방향족 환을 포함하는 보호기를 가지는 감광성폴리머 및 이를 포함하는 레지스트 조성물
US6605394B2 (en) 2001-05-03 2003-08-12 Applied Materials, Inc. Organic bottom antireflective coating for high performance mask making using optical imaging
KR20020090489A (ko) * 2001-05-28 2002-12-05 금호석유화학 주식회사 화학증폭형 레지스트용 중합체 및 이를 함유한 화학증폭형레지스트 조성물
KR100351458B1 (ko) * 2001-05-30 2002-09-05 주식회사 하이닉스반도체 유기 반사방지 중합체 및 그의 제조방법
KR100351459B1 (ko) * 2001-05-30 2002-09-05 주식회사 하이닉스반도체 유기 반사방지 중합체 및 그의 제조방법
US6703169B2 (en) 2001-07-23 2004-03-09 Applied Materials, Inc. Method of preparing optically imaged high performance photomasks
EP1422566A1 (en) * 2002-11-20 2004-05-26 Shipley Company, L.L.C. Multilayer photoresist systems
EP1422565A3 (en) * 2002-11-20 2005-01-05 Shipley Company LLC Multilayer photoresist systems
US7361447B2 (en) 2003-07-30 2008-04-22 Hynix Semiconductor Inc. Photoresist polymer and photoresist composition containing the same
KR100636938B1 (ko) * 2003-09-29 2006-10-19 주식회사 하이닉스반도체 포토레지스트 조성물
JP2005314453A (ja) * 2004-04-27 2005-11-10 Sumitomo Chemical Co Ltd アクリル樹脂及び該樹脂を含有する粘着剤
KR101156973B1 (ko) * 2005-03-02 2012-06-20 주식회사 동진쎄미켐 유기 반사방지막 형성용 유기 중합체 및 이를 포함하는 유기 조성물
EP1762895B1 (en) * 2005-08-29 2016-02-24 Rohm and Haas Electronic Materials, L.L.C. Antireflective Hard Mask Compositions
KR100703007B1 (ko) 2005-11-17 2007-04-06 삼성전자주식회사 감광성 유기 반사 방지막 형성용 조성물 및 이를 이용한패턴 형성 방법
KR100871770B1 (ko) * 2007-09-12 2008-12-05 주식회사 효성 안트라세닐 벤질기 발색단을 포함하는 공중합체, 상기공중합체의 제조방법, 상기 공중합체를 포함하는유기반사방지막 조성물 및 상기 조성물을 포함하는유기반사방지막
KR100920886B1 (ko) * 2007-12-13 2009-10-09 주식회사 효성 현상 가능한 유기 반사방지막 형성용 조성물 및 이로부터형성된 유기 반사방지막
KR100952465B1 (ko) * 2007-12-18 2010-04-13 제일모직주식회사 방향족 (메타)아크릴레이트 화합물 및 감광성 고분자, 및레지스트 조성물
KR101585992B1 (ko) * 2007-12-20 2016-01-19 삼성전자주식회사 반사방지 코팅용 고분자, 반사방지 코팅용 조성물 및 이를 이용한 반도체 장치의 패턴 형성 방법
KR100975913B1 (ko) * 2008-10-31 2010-08-13 한국전자통신연구원 유기 박막 트랜지스터용 조성물, 이를 이용하여 형성된 유기 박막 트랜지스터 및 그 형성방법
CN105732883B (zh) * 2016-03-01 2018-07-03 中国科学技术大学 一种发射室温磷光的水性聚丙烯酸酯的制备方法

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DE2902860A1 (de) * 1978-01-27 1979-08-02 Eastman Kodak Co Durch bestrahlung vernetzbare masse fuer die herstellung photographischer aufzeichnungsmaterialien
DE2848967A1 (de) * 1978-11-11 1980-05-22 Basf Ag Aromatische aldehydgruppen enthaltende polymerisate
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FR2736061B1 (fr) * 1995-06-27 1997-08-08 Thomson Csf Materiau electroluminescent a base de polymere, procede de fabrication et diode electroluminescente utilisant ce materiau
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Also Published As

Publication number Publication date
KR100395904B1 (ko) 2003-08-27
FR2793255B1 (fr) 2006-09-22
FR2793244A1 (fr) 2000-11-10
FR2793255A1 (fr) 2000-11-10
GB2349148B (en) 2004-08-04
FR2792633B1 (fr) 2007-06-08
ITTO991099A1 (it) 2001-06-15
DE19964382B4 (de) 2008-08-14
KR20000067184A (ko) 2000-11-15
US20020132183A1 (en) 2002-09-19
NL1014997C2 (nl) 2001-06-26
GB2349148A (en) 2000-10-25
JP2001098024A (ja) 2001-04-10
TW546318B (en) 2003-08-11
JP3851476B2 (ja) 2006-11-29
FR2793254A1 (fr) 2000-11-10
CN1215094C (zh) 2005-08-17
NL1014997A1 (nl) 2000-10-24
FR2792633A1 (fr) 2000-10-27
ITTO991099A0 (it) 1999-12-15
GB9927833D0 (en) 2000-01-26
US6368768B1 (en) 2002-04-09
FR2793254B1 (fr) 2006-09-22
DE19962784A1 (de) 2000-10-26
CN1271720A (zh) 2000-11-01

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