DE19958227A1 - Verfahren zur Erzeugung von Halbleiterwafern mit jeweils mehreren aus deren Harzbeschichtung freigelegten Höckern und Schneidrad - Google Patents

Verfahren zur Erzeugung von Halbleiterwafern mit jeweils mehreren aus deren Harzbeschichtung freigelegten Höckern und Schneidrad

Info

Publication number
DE19958227A1
DE19958227A1 DE19958227A DE19958227A DE19958227A1 DE 19958227 A1 DE19958227 A1 DE 19958227A1 DE 19958227 A DE19958227 A DE 19958227A DE 19958227 A DE19958227 A DE 19958227A DE 19958227 A1 DE19958227 A1 DE 19958227A1
Authority
DE
Germany
Prior art keywords
wheel
bumps
resin coating
exposed
grinding
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
DE19958227A
Other languages
German (de)
English (en)
Inventor
Isao Yukawa
Toshiki Takei
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Disco Corp
Original Assignee
Disco Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Disco Corp filed Critical Disco Corp
Publication of DE19958227A1 publication Critical patent/DE19958227A1/de
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/01—Manufacture or treatment
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B1/00—Processes of grinding or polishing; Use of auxiliary equipment in connection with such processes
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B41/00—Component parts such as frames, beds, carriages, headstocks
    • B24B41/06—Work supports, e.g. adjustable steadies
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B7/00—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor
    • B24B7/20—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground
    • B24B7/22—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain
    • B24B7/228—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain for grinding thin, brittle parts, e.g. semiconductors, wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/10—Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • H10W74/15—Encapsulations, e.g. protective coatings characterised by their shape or disposition on active surfaces of flip-chip devices, e.g. underfills

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Processing Of Stones Or Stones Resemblance Materials (AREA)
  • Polishing Bodies And Polishing Tools (AREA)
DE19958227A 1998-12-04 1999-12-03 Verfahren zur Erzeugung von Halbleiterwafern mit jeweils mehreren aus deren Harzbeschichtung freigelegten Höckern und Schneidrad Withdrawn DE19958227A1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP34520198A JP4249827B2 (ja) 1998-12-04 1998-12-04 半導体ウェーハの製造方法

Publications (1)

Publication Number Publication Date
DE19958227A1 true DE19958227A1 (de) 2000-06-08

Family

ID=18374990

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19958227A Withdrawn DE19958227A1 (de) 1998-12-04 1999-12-03 Verfahren zur Erzeugung von Halbleiterwafern mit jeweils mehreren aus deren Harzbeschichtung freigelegten Höckern und Schneidrad

Country Status (3)

Country Link
US (1) US6428393B1 (https=)
JP (1) JP4249827B2 (https=)
DE (1) DE19958227A1 (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102004017836B4 (de) * 2003-04-15 2017-05-11 Disco Corp. Flip-Chip-Bondgerät

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KR100801945B1 (ko) * 2000-10-17 2008-02-12 쓰리엠 이노베이티브 프로퍼티즈 캄파니 플립칩 접착을 위한 선-언더필드된 땜납 범프형 웨이퍼의 용매를 이용한 연마
JP4142926B2 (ja) * 2002-09-25 2008-09-03 株式会社ディスコ 端子基板の加工方法
CN100547741C (zh) * 2002-12-10 2009-10-07 富士通株式会社 半导体装置、布线衬底的形成方法和衬底处理装置
US7485962B2 (en) * 2002-12-10 2009-02-03 Fujitsu Limited Semiconductor device, wiring substrate forming method, and substrate processing apparatus
US20050161814A1 (en) * 2002-12-27 2005-07-28 Fujitsu Limited Method for forming bumps, semiconductor device and method for manufacturing same, substrate processing apparatus, and semiconductor manufacturing apparatus
WO2004061935A1 (ja) * 2002-12-27 2004-07-22 Fujitsu Limited バンプの形成方法、半導体装置及びその製造方法、並びに基板処理装置及び半導体製造装置
JP2004311767A (ja) * 2003-04-08 2004-11-04 Disco Abrasive Syst Ltd 半導体ウェーハの製造方法
JP2004319697A (ja) * 2003-04-15 2004-11-11 Disco Abrasive Syst Ltd 板状物に形成された電極の加工装置
DE10322360A1 (de) * 2003-05-09 2004-11-25 Kadia Produktion Gmbh + Co. Vorrichtung zum Feinbearbeiten von ebenen Flächen
US20080116240A1 (en) * 2003-12-22 2008-05-22 Edwards Mark S Method and apparatus for fracturing seal rings
JP4615225B2 (ja) * 2004-01-09 2011-01-19 株式会社ディスコ 板状物に形成された電極の加工装置，板状物に形成された電極の加工方法，及び板状物に形成された電極の加工装置のチャックテーブルの平面度測定方法
JP2005251799A (ja) * 2004-03-01 2005-09-15 Toshiba Mach Co Ltd バンプ上面平坦化加工装置
JP4542375B2 (ja) * 2004-06-02 2010-09-15 株式会社ディスコ 板状物に形成された電極の加工方法
JP4671802B2 (ja) 2004-10-18 2011-04-20 富士通株式会社 めっき方法、半導体装置の製造方法及び回路基板の製造方法
JP2007059524A (ja) * 2005-08-23 2007-03-08 Disco Abrasive Syst Ltd 基板の切削方法および切削装置
JP4757056B2 (ja) * 2006-02-21 2011-08-24 富士通株式会社 樹脂層の形成方法並びに半導体装置及びその製造方法
JP2008182015A (ja) * 2007-01-24 2008-08-07 Disco Abrasive Syst Ltd ウエーハの研削方法
US7800232B2 (en) * 2007-03-06 2010-09-21 Denso Corporation Metallic electrode forming method and semiconductor device having metallic electrode
JP2009004406A (ja) 2007-06-19 2009-01-08 Disco Abrasive Syst Ltd 基板の加工方法
JP2009010178A (ja) * 2007-06-28 2009-01-15 Disco Abrasive Syst Ltd ウェーハの加工方法
JP5378727B2 (ja) * 2008-08-05 2013-12-25 株式会社ディスコ バイト工具を備えた加工装置
JP5024348B2 (ja) * 2009-03-23 2012-09-12 株式会社デンソー 基板の表面に樹脂絶縁膜のパターンを形成する方法及び半導体装置
EP2263972A1 (fr) * 2009-06-12 2010-12-22 Nivarox-FAR S.A. Procédé de fabrication d'une microstructure métallique et microstructure obtenue selon ce procédé
JP2011009561A (ja) * 2009-06-26 2011-01-13 Disco Abrasive Syst Ltd デバイスの検査方法
KR101580924B1 (ko) * 2009-08-25 2015-12-30 삼성전자주식회사 웨이퍼 분할 장치 및 웨이퍼 분할 방법
CN102194744B (zh) * 2010-03-18 2014-05-07 亿光电子工业股份有限公司 具有荧光粉层的发光二极管晶片的制作方法
TWI492422B (zh) * 2010-03-18 2015-07-11 億光電子工業股份有限公司 具有螢光粉層之發光二極體晶片的製作方法
JP5622445B2 (ja) * 2010-06-10 2014-11-12 ラピスセミコンダクタ株式会社 研削方法及び研削装置
JP5729937B2 (ja) 2010-08-04 2015-06-03 株式会社ディスコ バイトホイール
TWI446590B (zh) 2010-09-30 2014-07-21 億光電子工業股份有限公司 發光二極體封裝結構及其製作方法
JP5553781B2 (ja) * 2011-01-17 2014-07-16 株式会社ディスコ 切削方法
JP5890977B2 (ja) * 2011-07-20 2016-03-22 株式会社ディスコ 加工方法
CN103084946B (zh) * 2011-10-31 2015-07-15 鸿准精密模具（昆山）有限公司 去毛刺机
JP2015107539A (ja) * 2013-12-05 2015-06-11 株式会社ディスコ バイト切削方法
JP6367614B2 (ja) * 2014-06-09 2018-08-01 株式会社ディスコ 研削ホイールの製造方法
JP2017056522A (ja) 2015-09-17 2017-03-23 株式会社ディスコ 研削ホイール及び研削方法
JP2017084903A (ja) * 2015-10-26 2017-05-18 リンテック株式会社 半導体装置の製造方法
JP6896346B2 (ja) * 2017-10-27 2021-06-30 株式会社ディスコ 被加工物の加工方法
JP6896347B2 (ja) * 2017-10-27 2021-06-30 株式会社ディスコ 被加工物の加工方法
CN111604604A (zh) * 2020-06-28 2020-09-01 安徽富信半导体科技有限公司 一种半导体元件加工用成型设备及其使用方法
CN112108950A (zh) * 2020-09-25 2020-12-22 安徽普蓝滤清器设备有限公司 一种滤清器加工用的端面打磨装置
CN119566996B (zh) * 2024-12-30 2025-11-11 安徽钰铭汽车配件有限公司 一种燃油滤清器壳体外表面旋转打磨装置

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US5035087A (en) * 1986-12-08 1991-07-30 Sumitomo Electric Industries, Ltd. Surface grinding machine
US6217433B1 (en) * 1995-05-16 2001-04-17 Unova Ip Corp. Grinding device and method
US5632667A (en) * 1995-06-29 1997-05-27 Delco Electronics Corporation No coat backside wafer grinding process
JP2000091285A (ja) * 1998-09-08 2000-03-31 Disco Abrasive Syst Ltd 半導体物品の研削方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102004017836B4 (de) * 2003-04-15 2017-05-11 Disco Corp. Flip-Chip-Bondgerät

Also Published As

Publication number Publication date
US6428393B1 (en) 2002-08-06
JP4249827B2 (ja) 2009-04-08
JP2000173954A (ja) 2000-06-23

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Legal Events

Date Code Title Description
8110 Request for examination paragraph 44
R119 Application deemed withdrawn, or ip right lapsed, due to non-payment of renewal fee

Effective date: 20130702