DE19935404A1 - Beleuchtungssystem mit mehreren Lichtquellen - Google Patents

Beleuchtungssystem mit mehreren Lichtquellen

Info

Publication number
DE19935404A1
DE19935404A1 DE19935404A DE19935404A DE19935404A1 DE 19935404 A1 DE19935404 A1 DE 19935404A1 DE 19935404 A DE19935404 A DE 19935404A DE 19935404 A DE19935404 A DE 19935404A DE 19935404 A1 DE19935404 A1 DE 19935404A1
Authority
DE
Germany
Prior art keywords
lighting system
pupil
pyramid
light sources
field
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
DE19935404A
Other languages
German (de)
English (en)
Inventor
Joerg Schultz
Dirk Rothweiler
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Carl Zeiss SMT GmbH
Original Assignee
Carl Zeiss SMT GmbH
Carl Zeiss AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Carl Zeiss SMT GmbH, Carl Zeiss AG filed Critical Carl Zeiss SMT GmbH
Priority to DE19935404A priority Critical patent/DE19935404A1/de
Priority to KR1020000041019A priority patent/KR100785824B1/ko
Priority to EP00115730A priority patent/EP1072957B1/de
Priority to DE50013897T priority patent/DE50013897D1/de
Priority to JP2000224404A priority patent/JP2001068410A/ja
Priority to US09/627,559 priority patent/US6570168B1/en
Publication of DE19935404A1 publication Critical patent/DE19935404A1/de
Priority to US10/429,927 priority patent/US7071476B2/en
Priority to US10/755,846 priority patent/US7329886B2/en
Withdrawn legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70008—Production of exposure light, i.e. light sources
    • G03F7/7005—Production of exposure light, i.e. light sources by multiple sources, e.g. light-emitting diodes [LED] or light source arrays
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70075—Homogenization of illumination intensity in the mask plane by using an integrator, e.g. fly's eye lens, facet mirror or glass rod, by using a diffusing optical element or by beam deflection
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70083—Non-homogeneous intensity distribution in the mask plane
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70091—Illumination settings, i.e. intensity distribution in the pupil plane or angular distribution in the field plane; On-axis or off-axis settings, e.g. annular, dipole or quadrupole settings; Partial coherence control, i.e. sigma or numerical aperture [NA]
    • G03F7/70108—Off-axis setting using a light-guiding element, e.g. diffractive optical elements [DOEs] or light guides
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/7015—Details of optical elements
    • G03F7/70166—Capillary or channel elements, e.g. nested extreme ultraviolet [EUV] mirrors or shells, optical fibers or light guides
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/702—Reflective illumination, i.e. reflective optical elements other than folding mirrors, e.g. extreme ultraviolet [EUV] illumination systems
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70233—Optical aspects of catoptric systems, i.e. comprising only reflective elements, e.g. extreme ultraviolet [EUV] projection systems
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70358—Scanning exposure, i.e. relative movement of patterned beam and workpiece during imaging
    • G—PHYSICS
    • G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
    • G21K—TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
    • G21K1/00—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating
    • G21K1/06—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating using diffraction, refraction or reflection, e.g. monochromators

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • General Engineering & Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Lenses (AREA)
  • Prostheses (AREA)
  • Microscoopes, Condenser (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
DE19935404A 1998-05-05 1999-07-30 Beleuchtungssystem mit mehreren Lichtquellen Withdrawn DE19935404A1 (de)

Priority Applications (8)

Application Number Priority Date Filing Date Title
DE19935404A DE19935404A1 (de) 1999-07-30 1999-07-30 Beleuchtungssystem mit mehreren Lichtquellen
KR1020000041019A KR100785824B1 (ko) 1999-07-30 2000-07-18 다수의 광원을 갖는 조명장치
EP00115730A EP1072957B1 (de) 1999-07-30 2000-07-21 Beleuchtungssystem mit mehreren Lichtquellen
DE50013897T DE50013897D1 (de) 1999-07-30 2000-07-21 Beleuchtungssystem mit mehreren Lichtquellen
JP2000224404A JP2001068410A (ja) 1999-07-30 2000-07-25 複数の光源を備えた照明系
US09/627,559 US6570168B1 (en) 1999-07-30 2000-07-27 Illumination system with a plurality of light sources
US10/429,927 US7071476B2 (en) 1998-05-05 2003-05-05 Illumination system with a plurality of light sources
US10/755,846 US7329886B2 (en) 1998-05-05 2004-01-12 EUV illumination system having a plurality of light sources for illuminating an optical element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19935404A DE19935404A1 (de) 1999-07-30 1999-07-30 Beleuchtungssystem mit mehreren Lichtquellen

Publications (1)

Publication Number Publication Date
DE19935404A1 true DE19935404A1 (de) 2001-02-01

Family

ID=7916329

Family Applications (2)

Application Number Title Priority Date Filing Date
DE19935404A Withdrawn DE19935404A1 (de) 1998-05-05 1999-07-30 Beleuchtungssystem mit mehreren Lichtquellen
DE50013897T Expired - Lifetime DE50013897D1 (de) 1999-07-30 2000-07-21 Beleuchtungssystem mit mehreren Lichtquellen

Family Applications After (1)

Application Number Title Priority Date Filing Date
DE50013897T Expired - Lifetime DE50013897D1 (de) 1999-07-30 2000-07-21 Beleuchtungssystem mit mehreren Lichtquellen

Country Status (5)

Country Link
US (2) US6570168B1 (US06573293-20030603-C00184.png)
EP (1) EP1072957B1 (US06573293-20030603-C00184.png)
JP (1) JP2001068410A (US06573293-20030603-C00184.png)
KR (1) KR100785824B1 (US06573293-20030603-C00184.png)
DE (2) DE19935404A1 (US06573293-20030603-C00184.png)

Cited By (2)

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US7218651B2 (en) 2004-12-29 2007-05-15 Xtreme Technologies Gmbh Arrangement for the generation of a pulsed laser beam of high average output
WO2015110238A1 (en) * 2014-01-27 2015-07-30 Asml Netherlands B.V. Radiation source

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US7329886B2 (en) 1998-05-05 2008-02-12 Carl Zeiss Smt Ag EUV illumination system having a plurality of light sources for illuminating an optical element
USRE42065E1 (en) * 1998-05-05 2011-01-25 Carl Zeiss Smt Ag Illumination system particularly for microlithography
US6947124B2 (en) * 1998-05-05 2005-09-20 Carl Zeiss Smt Ag Illumination system particularly for microlithography
US6947120B2 (en) * 1998-05-05 2005-09-20 Carl Zeiss Smt Ag Illumination system particularly for microlithography
DE19935404A1 (de) 1999-07-30 2001-02-01 Zeiss Carl Fa Beleuchtungssystem mit mehreren Lichtquellen
US6859515B2 (en) * 1998-05-05 2005-02-22 Carl-Zeiss-Stiftung Trading Illumination system, particularly for EUV lithography
US7142285B2 (en) * 1998-05-05 2006-11-28 Carl Zeiss Smt Ag Illumination system particularly for microlithography
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US9475611B2 (en) 2007-04-19 2016-10-25 Anheuser-Busch Inbev S.A. Integrally blow-moulded bag-in-container having interface vents opening to the atmosphere at location adjacent to bag's mouth, preform for making it; and processes for producing the preform and bag-in-container
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US20080258356A1 (en) 2007-04-19 2008-10-23 Inbev S.A. Integrally blow-moulded bag-in-container comprising an inner layer and an outer layer comprising energy absorbing additives, and preform for making it
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DE102009045694B4 (de) * 2009-10-14 2012-03-29 Carl Zeiss Smt Gmbh Beleuchtungsoptik für die Mikrolithographie sowie Beleuchtungssystem und Projektionsbelichtungsanlage mit einer derartigen Beleuchtungsoptik
JP6369906B2 (ja) 2012-03-09 2018-08-08 カール・ツァイス・エスエムティー・ゲーエムベーハー Ｅｕｖ投影リソグラフィのための照明光学ユニット及びそのような照明光学ユニットを含む光学系
DE102012203716A1 (de) 2012-03-09 2013-09-12 Carl Zeiss Smt Gmbh Beleuchtungsoptik für die EUV-Projektionslithografie sowie optisches System mit einer derartigen Beleuchtungsoptik
US8749179B2 (en) * 2012-08-14 2014-06-10 Kla-Tencor Corporation Optical characterization systems employing compact synchrotron radiation sources
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US9277634B2 (en) * 2013-01-17 2016-03-01 Kla-Tencor Corporation Apparatus and method for multiplexed multiple discharge plasma produced sources
DE102013204443A1 (de) * 2013-03-14 2014-10-02 Carl Zeiss Smt Gmbh Optische Baugruppe zur Lichtleitwerterhöhung
DE102013223935A1 (de) 2013-11-22 2015-05-28 Carl Zeiss Smt Gmbh Beleuchtungssystem für die EUV-Belichtungslithographie
KR102313345B1 (ko) * 2014-10-02 2021-10-15 삼성전자주식회사 광대역 광원 및 이를 구비하는 광학 검사장치
DE102014221313A1 (de) 2014-10-21 2016-04-21 Carl Zeiss Smt Gmbh Beleuchtung für die EUV-Projektionslithografie
DE102014226917A1 (de) 2014-12-23 2015-12-17 Carl Zeiss Smt Gmbh Beleuchtungssystem für die EUV-Projektionslithographie
DE102014226920A1 (de) 2014-12-23 2016-06-23 Carl Zeiss Smt Gmbh Optische Komponente
TWI701517B (zh) 2014-12-23 2020-08-11 德商卡爾蔡司Ｓｍｔ有限公司 光學構件
DE102014226921A1 (de) 2014-12-23 2016-06-23 Carl Zeiss Smt Gmbh Strahlungsquellenmodul
DE102014226918A1 (de) 2014-12-23 2016-06-23 Carl Zeiss Smt Gmbh Optische Komponente
DE102015212878A1 (de) 2015-07-09 2017-01-12 Carl Zeiss Smt Gmbh Strahlführungsvorrichtung
DE102015215216A1 (de) 2015-08-10 2017-02-16 Carl Zeiss Smt Gmbh Optisches System
DE102015220955A1 (de) 2015-10-27 2015-12-17 Carl Zeiss Smt Gmbh Optisches Bauelement
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DE102016217426A1 (de) 2016-09-13 2017-08-24 Carl Zeiss Smt Gmbh Strahlteiler
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DE50013897D1 (de) 2007-02-08
EP1072957B1 (de) 2006-12-27
KR20010049807A (ko) 2001-06-15
EP1072957A3 (de) 2005-03-02
EP1072957A2 (de) 2001-01-31
US6570168B1 (en) 2003-05-27
KR100785824B1 (ko) 2007-12-13
US7071476B2 (en) 2006-07-04
JP2001068410A (ja) 2001-03-16

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