DE19902999A1 - Verfahren zur Ausbildung einer hohlraumfreien Grabenisolation - Google Patents

Verfahren zur Ausbildung einer hohlraumfreien Grabenisolation

Info

Publication number
DE19902999A1
DE19902999A1 DE19902999A DE19902999A DE19902999A1 DE 19902999 A1 DE19902999 A1 DE 19902999A1 DE 19902999 A DE19902999 A DE 19902999A DE 19902999 A DE19902999 A DE 19902999A DE 19902999 A1 DE19902999 A1 DE 19902999A1
Authority
DE
Germany
Prior art keywords
trench
layer
substrate
forming
oxide layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
DE19902999A
Other languages
German (de)
English (en)
Inventor
Chang-Ki Hong
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Samsung Electronics Co Ltd
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of DE19902999A1 publication Critical patent/DE19902999A1/de
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/76224—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials
    • H01L21/76232—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials of trenches having a shape other than rectangular or V-shape, e.g. rounded corners, oblique or rounded trench walls

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Element Separation (AREA)
DE19902999A 1998-01-26 1999-01-26 Verfahren zur Ausbildung einer hohlraumfreien Grabenisolation Ceased DE19902999A1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019980002390A KR19990066454A (ko) 1998-01-26 1998-01-26 반도체 장치의 트렌치 격리 형성 방법

Publications (1)

Publication Number Publication Date
DE19902999A1 true DE19902999A1 (de) 1999-07-29

Family

ID=19532169

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19902999A Ceased DE19902999A1 (de) 1998-01-26 1999-01-26 Verfahren zur Ausbildung einer hohlraumfreien Grabenisolation

Country Status (6)

Country Link
JP (1) JPH11260903A (fr)
KR (1) KR19990066454A (fr)
DE (1) DE19902999A1 (fr)
FR (1) FR2776126A1 (fr)
GB (1) GB2333644A (fr)
TW (1) TW412834B (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6518148B1 (en) * 2001-09-06 2003-02-11 Taiwan Semiconductor Manufacturing Company, Ltd Method for protecting STI structures with low etching rate liners

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3540633B2 (ja) * 1998-11-11 2004-07-07 株式会社東芝 半導体装置の製造方法
JP2001118920A (ja) * 1999-10-15 2001-04-27 Seiko Epson Corp 半導体装置およびその製造方法
JP2001332613A (ja) * 2000-05-24 2001-11-30 Nec Corp 半導体装置の製造方法
KR100485518B1 (ko) * 2002-09-18 2005-04-27 동부아남반도체 주식회사 셀로우 트렌치 소자분리막의 제조 방법
KR100476934B1 (ko) * 2002-10-10 2005-03-16 삼성전자주식회사 트렌치 소자분리막을 갖는 반도체소자 형성방법
CN111863706A (zh) * 2020-08-28 2020-10-30 上海华力微电子有限公司 闪存存储器及其制造方法

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW291580B (en) * 1996-04-22 1996-11-21 United Microelectronics Corp Manufacturing process of shallow isolation trench
US5712185A (en) * 1996-04-23 1998-01-27 United Microelectronics Method for forming shallow trench isolation

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6518148B1 (en) * 2001-09-06 2003-02-11 Taiwan Semiconductor Manufacturing Company, Ltd Method for protecting STI structures with low etching rate liners

Also Published As

Publication number Publication date
FR2776126A1 (fr) 1999-09-17
JPH11260903A (ja) 1999-09-24
TW412834B (en) 2000-11-21
GB9901480D0 (en) 1999-03-17
KR19990066454A (ko) 1999-08-16
GB2333644A (en) 1999-07-28

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Legal Events

Date Code Title Description
OP8 Request for examination as to paragraph 44 patent law
8131 Rejection