DE19626396B4 - Verfahren und Vorrichtung zur Herstellung und zum Schleifen von Siliziumscheiben - Google Patents
Verfahren und Vorrichtung zur Herstellung und zum Schleifen von Siliziumscheiben Download PDFInfo
- Publication number
- DE19626396B4 DE19626396B4 DE19626396A DE19626396A DE19626396B4 DE 19626396 B4 DE19626396 B4 DE 19626396B4 DE 19626396 A DE19626396 A DE 19626396A DE 19626396 A DE19626396 A DE 19626396A DE 19626396 B4 DE19626396 B4 DE 19626396B4
- Authority
- DE
- Germany
- Prior art keywords
- silicon wafer
- grindstone
- grinding
- producing
- silicon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 182
- 239000010703 silicon Substances 0.000 title claims abstract description 182
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 180
- 235000012431 wafers Nutrition 0.000 title claims description 179
- 238000000034 method Methods 0.000 title claims description 36
- 239000007788 liquid Substances 0.000 claims abstract description 29
- 238000004519 manufacturing process Methods 0.000 claims abstract description 22
- 238000005520 cutting process Methods 0.000 claims abstract description 18
- 239000004575 stone Substances 0.000 claims abstract description 14
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims abstract description 6
- 125000006850 spacer group Chemical group 0.000 claims description 28
- 230000008569 process Effects 0.000 claims description 21
- 239000012530 fluid Substances 0.000 claims description 20
- 230000002093 peripheral effect Effects 0.000 claims description 15
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 8
- 239000000969 carrier Substances 0.000 claims description 6
- 230000007246 mechanism Effects 0.000 claims description 4
- 238000003825 pressing Methods 0.000 claims description 4
- 238000007514 turning Methods 0.000 claims description 2
- 238000005498 polishing Methods 0.000 description 23
- 238000005530 etching Methods 0.000 description 12
- 238000005406 washing Methods 0.000 description 9
- 238000012545 processing Methods 0.000 description 8
- 238000001179 sorption measurement Methods 0.000 description 7
- 230000009467 reduction Effects 0.000 description 5
- 230000008901 benefit Effects 0.000 description 4
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 3
- 238000007796 conventional method Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- 229910001018 Cast iron Inorganic materials 0.000 description 2
- 238000005336 cracking Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 229910002804 graphite Inorganic materials 0.000 description 2
- 239000010439 graphite Substances 0.000 description 2
- 229910052742 iron Inorganic materials 0.000 description 2
- 238000003754 machining Methods 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 150000003376 silicon Chemical class 0.000 description 2
- 238000003892 spreading Methods 0.000 description 2
- 230000007480 spreading Effects 0.000 description 2
- 229910001220 stainless steel Inorganic materials 0.000 description 2
- 239000010935 stainless steel Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- VHCQVGQULWFQTM-VOTSOKGWSA-N Rubone Chemical compound COC1=CC(OC)=CC(O)=C1C(=O)\C=C\C1=CC(OC)=C(OC)C=C1OC VHCQVGQULWFQTM-VOTSOKGWSA-N 0.000 description 1
- VHCQVGQULWFQTM-UHFFFAOYSA-N Rubone Natural products COC1=CC(OC)=CC(O)=C1C(=O)C=CC1=CC(OC)=C(OC)C=C1OC VHCQVGQULWFQTM-UHFFFAOYSA-N 0.000 description 1
- 238000005299 abrasion Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000002996 emotional effect Effects 0.000 description 1
- 239000012634 fragment Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- -1 iron ions Chemical class 0.000 description 1
- 238000007517 polishing process Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/07—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool
- B24B37/08—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool for double side lapping
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
- H01L21/02005—Preparing bulk and homogeneous wafers
- H01L21/02008—Multistep processes
- H01L21/0201—Specific process step
- H01L21/02024—Mirror polishing
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/005—Control means for lapping machines or devices
- B24B37/015—Temperature control
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D1/00—Working stone or stone-like materials, e.g. brick, concrete or glass, not provided for elsewhere; Machines, devices, tools therefor
- B28D1/003—Multipurpose machines; Equipment therefor
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
- H01L21/02005—Preparing bulk and homogeneous wafers
- H01L21/02008—Multistep processes
- H01L21/0201—Specific process step
- H01L21/02019—Chemical etching
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Mining & Mineral Resources (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Grinding Of Cylindrical And Plane Surfaces (AREA)
- Grinding And Polishing Of Tertiary Curved Surfaces And Surfaces With Complex Shapes (AREA)
Applications Claiming Priority (6)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19117195 | 1995-07-03 | ||
| JP7-191171 | 1996-01-12 | ||
| JP441596 | 1996-01-12 | ||
| JP8-004415 | 1996-01-12 | ||
| JP8-089784 | 1996-04-11 | ||
| JP08978496A JP3923107B2 (ja) | 1995-07-03 | 1996-04-11 | シリコンウェーハの製造方法およびその装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE19626396A1 DE19626396A1 (de) | 1997-01-16 |
| DE19626396B4 true DE19626396B4 (de) | 2006-12-07 |
Family
ID=27276263
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19626396A Expired - Lifetime DE19626396B4 (de) | 1995-07-03 | 1996-07-01 | Verfahren und Vorrichtung zur Herstellung und zum Schleifen von Siliziumscheiben |
Country Status (5)
| Country | Link |
|---|---|
| JP (1) | JP3923107B2 (enrdf_load_stackoverflow) |
| KR (1) | KR100457718B1 (enrdf_load_stackoverflow) |
| CN (1) | CN1096108C (enrdf_load_stackoverflow) |
| DE (1) | DE19626396B4 (enrdf_load_stackoverflow) |
| TW (1) | TW303488B (enrdf_load_stackoverflow) |
Families Citing this family (48)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3620554B2 (ja) * | 1996-03-25 | 2005-02-16 | 信越半導体株式会社 | 半導体ウェーハ製造方法 |
| JP2002346918A (ja) * | 2001-05-29 | 2002-12-04 | Speedfam Co Ltd | 両面研磨装置 |
| DE10132504C1 (de) * | 2001-07-05 | 2002-10-10 | Wacker Siltronic Halbleitermat | Verfahren zur beidseitigen Material abtragenden Bearbeitung von Halbleiterscheiben und seine Verwendung |
| DE10142400B4 (de) * | 2001-08-30 | 2009-09-03 | Siltronic Ag | Halbleiterscheibe mit verbesserter lokaler Ebenheit und Verfahren zu deren Herstellung |
| FR2850966B1 (fr) | 2003-02-10 | 2005-03-18 | Rhodia Polyamide Intermediates | Procede de fabrication de composes dinitriles |
| FR2854891B1 (fr) | 2003-05-12 | 2006-07-07 | Rhodia Polyamide Intermediates | Procede de preparation de dinitriles |
| CN1301184C (zh) * | 2003-12-16 | 2007-02-21 | 汪开庆 | 加工半导体用兰宝石晶体基片的光学研磨机及其加工方法 |
| EP2322503B1 (en) | 2005-10-18 | 2014-12-31 | Invista Technologies S.à.r.l. | Process of making 3-aminopentanenitrile |
| SK50822008A3 (sk) | 2006-03-17 | 2009-11-05 | Invista Technologies S. A. R. L. | Spôsob purifikácie triorganofositov ošetrením bázickým aditívom |
| DE102006062872B4 (de) * | 2006-07-13 | 2012-06-14 | Peter Wolters Gmbh | Verfahren zum gleichzeitigen beidseitigen Schleifen mehrerer Halbleiterscheiben |
| DE102006062871B4 (de) * | 2006-07-13 | 2012-06-21 | Peter Wolters Gmbh | Verfahren zum gleichzeitigen beidseitigen Schleifen mehrerer Halbleiterscheiben |
| US7919646B2 (en) | 2006-07-14 | 2011-04-05 | Invista North America S.A R.L. | Hydrocyanation of 2-pentenenitrile |
| DE102007056628B4 (de) | 2007-03-19 | 2019-03-14 | Siltronic Ag | Verfahren und Vorrichtung zum gleichzeitigen Schleifen mehrerer Halbleiterscheiben |
| CN101687658B (zh) | 2007-05-14 | 2013-07-24 | 因温斯特技术公司 | 高效反应器和方法 |
| EP2164587B1 (en) | 2007-06-13 | 2018-04-04 | INVISTA Textiles (U.K.) Limited | Process for improving adiponitrile quality |
| EP2229353B1 (en) | 2008-01-15 | 2018-01-03 | INVISTA Textiles (U.K.) Limited | Hydrocyanation of pentenenitriles |
| CN101910119B (zh) | 2008-01-15 | 2013-05-29 | 因温斯特技术公司 | 用于制备和精制3-戊烯腈,和用于精制2-甲基-3-丁烯腈的方法 |
| JP4780142B2 (ja) * | 2008-05-22 | 2011-09-28 | 信越半導体株式会社 | ウェーハの製造方法 |
| JP5600867B2 (ja) * | 2008-06-16 | 2014-10-08 | 株式会社Sumco | 半導体ウェーハの製造方法 |
| JP2009302409A (ja) * | 2008-06-16 | 2009-12-24 | Sumco Corp | 半導体ウェーハの製造方法 |
| US8247621B2 (en) | 2008-10-14 | 2012-08-21 | Invista North America S.A.R.L. | Process for making 2-secondary-alkyl-4,5-di-(normal-alkyl)phenols |
| DE102009025242B4 (de) * | 2009-06-17 | 2013-05-23 | Siltronic Ag | Verfahren zum beidseitigen chemischen Schleifen einer Halbleiterscheibe |
| WO2011017543A1 (en) | 2009-08-07 | 2011-02-10 | Invista Technologies S.A. R.L. | Hydrogenation and esterification to form diesters |
| CN101708593B (zh) * | 2009-12-08 | 2013-01-09 | 中国电子科技集团公司第四十五研究所 | 化学机械抛光心轴传动装置 |
| CN101875181B (zh) * | 2010-05-31 | 2012-02-22 | 青岛理工大学 | 脆硬材料磨削机床 |
| CN101972983B (zh) * | 2010-08-11 | 2013-01-09 | 中国电子科技集团公司第四十五研究所 | 化学机械抛光心轴装置 |
| CN102172885B (zh) * | 2011-01-31 | 2013-05-15 | 北京通美晶体技术有限公司 | 衬底的抛光装置及其抛光的衬底 |
| CN102179734A (zh) * | 2011-03-14 | 2011-09-14 | 刘晓明 | 超硬刀片钝化抛光机 |
| CN102229093B (zh) * | 2011-07-01 | 2013-09-18 | 中国电子科技集团公司第四十五研究所 | 一种应用在晶片抛光设备上的升降加压机构 |
| DE102011089570A1 (de) | 2011-12-22 | 2013-06-27 | Siltronic Ag | Führungskäfig zum beidseitigen Schleifen von mindestens einem scheibenförmigen Werkstück zwischen zwei rotierenden Arbeitsscheiben einer Schleifvorrichtung, Verfahren zur Herstellung des Führungskäfigs und Verfahren zum gleichzeitigen beidseitigen Schleifen von scheibenförmigen Werkstücken unter Verwendung des Führungskäfigs |
| CN103123865B (zh) * | 2013-02-26 | 2015-05-27 | 宁波韵升股份有限公司 | 一种磁性产品加工方法及自动分选设备 |
| CN104669105B (zh) * | 2013-11-26 | 2017-12-29 | 浙江汇锋塑胶科技有限公司 | 一种蓝宝石触摸面板的两面研磨方法 |
| CN103817572A (zh) * | 2014-02-18 | 2014-05-28 | 河南机电高等专科学校 | 一种离合器摩擦钢片修复装置 |
| CN103847032B (zh) * | 2014-03-20 | 2016-01-06 | 德清晶辉光电科技有限公司 | 一种大直径超薄石英晶片的生产工艺 |
| JP6707831B2 (ja) * | 2015-10-09 | 2020-06-10 | 株式会社Sumco | 研削装置および研削方法 |
| JP6792363B2 (ja) * | 2016-07-22 | 2020-11-25 | 株式会社ディスコ | 研削装置 |
| CN106425857A (zh) * | 2016-11-18 | 2017-02-22 | 南京华东电子信息科技股份有限公司 | 一种新型中小型单片液晶面板抛光固定治具 |
| CN107543837B (zh) * | 2017-08-25 | 2020-02-21 | 郑州磨料磨具磨削研究所有限公司 | 一种砂轮精磨后硅片损伤层的检测方法 |
| TWI656233B (zh) * | 2017-10-26 | 2019-04-11 | 漢民科技股份有限公司 | 單晶圓處理裝置及其操作方法、傳送方法與準直器 |
| CN108544329A (zh) * | 2018-04-09 | 2018-09-18 | 中国工程物理研究院材料研究所 | 一种表面抛磨装置及其应用 |
| DE212018000039U1 (de) * | 2018-09-17 | 2018-10-23 | Suzhou Maichuang Information Technology Co., Ltd. | Automatische Schleifmaschine |
| JP7217409B2 (ja) * | 2020-01-24 | 2023-02-03 | 株式会社東京精密 | 亀裂進展装置及び亀裂進展方法 |
| CN112692722A (zh) * | 2020-12-24 | 2021-04-23 | 江苏天科合达半导体有限公司 | 打磨设备、打磨盘的加工方法以及碳化硅晶片的加工方法 |
| CN113752111B (zh) * | 2021-09-30 | 2023-11-21 | 浙江仲全数控科技有限公司 | 一种立式双端面磨床 |
| CN113815127B (zh) * | 2021-10-20 | 2023-06-02 | 山东中恒建设集团有限公司 | 一种建筑施工用物料周转切割装置 |
| CN115008318B (zh) * | 2022-06-16 | 2025-03-28 | 南京工业职业技术大学 | 一种气动加载式双面环抛机 |
| CN116652707A (zh) * | 2023-06-30 | 2023-08-29 | 中原内配集团鼎锐科技有限公司 | 一种刀具钝化设备及其钝化加工方法 |
| CN116967852A (zh) * | 2023-07-18 | 2023-10-31 | 家颖科技(苏州)有限公司 | 一种陶瓷打磨方法 |
Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59107854A (ja) * | 1982-12-08 | 1984-06-22 | Hitachi Ltd | ウエハの両面同時研磨方法 |
| JPS59169758A (ja) * | 1983-03-15 | 1984-09-25 | Toshiba Corp | ウエハの研磨装置 |
| JPS6384860A (ja) * | 1986-09-26 | 1988-04-15 | Hitachi Ltd | 表面加工装置 |
| JPH02190244A (ja) * | 1989-01-18 | 1990-07-26 | Kanebo Ltd | 硬脆材料の研磨方法 |
| US5113622A (en) * | 1989-03-24 | 1992-05-19 | Sumitomo Electric Industries, Ltd. | Apparatus for grinding semiconductor wafer |
| JPH0667070A (ja) * | 1992-08-24 | 1994-03-11 | Furukawa Electric Co Ltd:The | 半導体レーザモジュール |
| EP0588055A2 (en) * | 1992-09-18 | 1994-03-23 | Mitsubishi Materials Corporation | Method for manufacturing wafer |
| JPH06296400A (ja) * | 1993-04-08 | 1994-10-21 | Toyota Motor Corp | 電気自動車用エンジン駆動発電機の制御装置 |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5840265A (ja) * | 1981-08-28 | 1983-03-09 | Toshiba Corp | 両面ポリシング装置 |
| JPS5972139A (ja) * | 1982-10-18 | 1984-04-24 | Toshiba Corp | 薄板材の加工方法 |
| KR900001724B1 (ko) * | 1987-09-28 | 1990-03-19 | 주식회사 한국삼기 | 평면연마장치 |
| JPH06103678B2 (ja) * | 1987-11-28 | 1994-12-14 | 株式会社東芝 | 半導体基板の加工方法 |
| JP2674665B2 (ja) * | 1989-03-24 | 1997-11-12 | 住友電気工業株式会社 | 半導体ウェーハの研削装置 |
| JPH0740565B2 (ja) * | 1991-04-05 | 1995-05-01 | 不二越機械工業株式会社 | ウエハーの両面同時研削方法とその装置 |
| JP2722975B2 (ja) * | 1992-11-19 | 1998-03-09 | 住友金属工業株式会社 | マルチワイヤソーによる切断方法 |
| US5389579A (en) * | 1993-04-05 | 1995-02-14 | Motorola, Inc. | Method for single sided polishing of a semiconductor wafer |
-
1996
- 1996-04-11 JP JP08978496A patent/JP3923107B2/ja not_active Expired - Fee Related
- 1996-05-15 TW TW085105754A patent/TW303488B/zh not_active IP Right Cessation
- 1996-05-31 KR KR1019960019031A patent/KR100457718B1/ko not_active Expired - Lifetime
- 1996-07-01 DE DE19626396A patent/DE19626396B4/de not_active Expired - Lifetime
- 1996-07-03 CN CN96110121A patent/CN1096108C/zh not_active Expired - Lifetime
Patent Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59107854A (ja) * | 1982-12-08 | 1984-06-22 | Hitachi Ltd | ウエハの両面同時研磨方法 |
| JPS59169758A (ja) * | 1983-03-15 | 1984-09-25 | Toshiba Corp | ウエハの研磨装置 |
| JPS6384860A (ja) * | 1986-09-26 | 1988-04-15 | Hitachi Ltd | 表面加工装置 |
| JPH02190244A (ja) * | 1989-01-18 | 1990-07-26 | Kanebo Ltd | 硬脆材料の研磨方法 |
| US5113622A (en) * | 1989-03-24 | 1992-05-19 | Sumitomo Electric Industries, Ltd. | Apparatus for grinding semiconductor wafer |
| JPH0667070A (ja) * | 1992-08-24 | 1994-03-11 | Furukawa Electric Co Ltd:The | 半導体レーザモジュール |
| EP0588055A2 (en) * | 1992-09-18 | 1994-03-23 | Mitsubishi Materials Corporation | Method for manufacturing wafer |
| JPH06104229A (ja) * | 1992-09-18 | 1994-04-15 | Mitsubishi Materials Corp | ウェーハの製造方法 |
| JPH06296400A (ja) * | 1993-04-08 | 1994-10-21 | Toyota Motor Corp | 電気自動車用エンジン駆動発電機の制御装置 |
Also Published As
| Publication number | Publication date |
|---|---|
| DE19626396A1 (de) | 1997-01-16 |
| JP3923107B2 (ja) | 2007-05-30 |
| CN1096108C (zh) | 2002-12-11 |
| CN1145531A (zh) | 1997-03-19 |
| JPH09248740A (ja) | 1997-09-22 |
| KR970008384A (ko) | 1997-02-24 |
| TW303488B (enrdf_load_stackoverflow) | 1997-04-21 |
| KR100457718B1 (ko) | 2005-04-06 |
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