TW303488B - - Google Patents

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Publication number
TW303488B
TW303488B TW085105754A TW85105754A TW303488B TW 303488 B TW303488 B TW 303488B TW 085105754 A TW085105754 A TW 085105754A TW 85105754 A TW85105754 A TW 85105754A TW 303488 B TW303488 B TW 303488B
Authority
TW
Taiwan
Prior art keywords
silicon wafer
grinding
upper side
sides
whetstone
Prior art date
Application number
TW085105754A
Other languages
English (en)
Chinese (zh)
Original Assignee
Mitsubishi Materials Silicon Kk
Mitsubishi Materials Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Materials Silicon Kk, Mitsubishi Materials Corp filed Critical Mitsubishi Materials Silicon Kk
Application granted granted Critical
Publication of TW303488B publication Critical patent/TW303488B/zh

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002—Preparing wafers
    • H01L21/02005—Preparing bulk and homogeneous wafers
    • H01L21/02008—Multistep processes
    • H01L21/0201—Specific process step
    • H01L21/02024—Mirror polishing
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/07—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool
    • B24B37/08—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool for double side lapping
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/005—Control means for lapping machines or devices
    • B24B37/015—Temperature control
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B28—WORKING CEMENT, CLAY, OR STONE
    • B28D—WORKING STONE OR STONE-LIKE MATERIALS
    • B28D1/00—Working stone or stone-like materials, e.g. brick, concrete or glass, not provided for elsewhere; Machines, devices, tools therefor
    • B28D1/003—Multipurpose machines; Equipment therefor
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B28—WORKING CEMENT, CLAY, OR STONE
    • B28D—WORKING STONE OR STONE-LIKE MATERIALS
    • B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002—Preparing wafers
    • H01L21/02005—Preparing bulk and homogeneous wafers
    • H01L21/02008—Multistep processes
    • H01L21/0201—Specific process step
    • H01L21/02019—Chemical etching

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mining & Mineral Resources (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Grinding Of Cylindrical And Plane Surfaces (AREA)
  • Grinding And Polishing Of Tertiary Curved Surfaces And Surfaces With Complex Shapes (AREA)
TW085105754A 1995-07-03 1996-05-15 TW303488B (enrdf_load_stackoverflow)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP19117195 1995-07-03
JP441596 1996-01-12
JP08978496A JP3923107B2 (ja) 1995-07-03 1996-04-11 シリコンウェーハの製造方法およびその装置

Publications (1)

Publication Number Publication Date
TW303488B true TW303488B (enrdf_load_stackoverflow) 1997-04-21

Family

ID=27276263

Family Applications (1)

Application Number Title Priority Date Filing Date
TW085105754A TW303488B (enrdf_load_stackoverflow) 1995-07-03 1996-05-15

Country Status (5)

Country Link
JP (1) JP3923107B2 (enrdf_load_stackoverflow)
KR (1) KR100457718B1 (enrdf_load_stackoverflow)
CN (1) CN1096108C (enrdf_load_stackoverflow)
DE (1) DE19626396B4 (enrdf_load_stackoverflow)
TW (1) TW303488B (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI727056B (zh) * 2016-07-22 2021-05-11 日商迪思科股份有限公司 研磨裝置

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JP3620554B2 (ja) * 1996-03-25 2005-02-16 信越半導体株式会社 半導体ウェーハ製造方法
JP2002346918A (ja) * 2001-05-29 2002-12-04 Speedfam Co Ltd 両面研磨装置
DE10132504C1 (de) 2001-07-05 2002-10-10 Wacker Siltronic Halbleitermat Verfahren zur beidseitigen Material abtragenden Bearbeitung von Halbleiterscheiben und seine Verwendung
DE10142400B4 (de) * 2001-08-30 2009-09-03 Siltronic Ag Halbleiterscheibe mit verbesserter lokaler Ebenheit und Verfahren zu deren Herstellung
FR2850966B1 (fr) 2003-02-10 2005-03-18 Rhodia Polyamide Intermediates Procede de fabrication de composes dinitriles
FR2854891B1 (fr) 2003-05-12 2006-07-07 Rhodia Polyamide Intermediates Procede de preparation de dinitriles
CN1301184C (zh) * 2003-12-16 2007-02-21 汪开庆 加工半导体用兰宝石晶体基片的光学研磨机及其加工方法
EP1948591A1 (en) 2005-10-18 2008-07-30 INVISTA Technologies S.à.r.l. Process of making 3-aminopentanenitrile
US7629484B2 (en) 2006-03-17 2009-12-08 Invista North America S.A.R.L. Method for the purification of triorganophosphites by treatment with a basic additive
DE102006062871B4 (de) * 2006-07-13 2012-06-21 Peter Wolters Gmbh Verfahren zum gleichzeitigen beidseitigen Schleifen mehrerer Halbleiterscheiben
DE102006062872B4 (de) * 2006-07-13 2012-06-14 Peter Wolters Gmbh Verfahren zum gleichzeitigen beidseitigen Schleifen mehrerer Halbleiterscheiben
US7919646B2 (en) 2006-07-14 2011-04-05 Invista North America S.A R.L. Hydrocyanation of 2-pentenenitrile
DE102007056627B4 (de) 2007-03-19 2023-12-21 Lapmaster Wolters Gmbh Verfahren zum gleichzeitigen Schleifen mehrerer Halbleiterscheiben
US8906334B2 (en) 2007-05-14 2014-12-09 Invista North America S.A R.L. High efficiency reactor and process
US8101790B2 (en) 2007-06-13 2012-01-24 Invista North America S.A.R.L. Process for improving adiponitrile quality
CN101918356B (zh) 2008-01-15 2013-09-25 因温斯特技术公司 戊烯腈的氢氰化
US7977502B2 (en) 2008-01-15 2011-07-12 Invista North America S.A R.L. Process for making and refining 3-pentenenitrile, and for refining 2-methyl-3-butenenitrile
JP4780142B2 (ja) * 2008-05-22 2011-09-28 信越半導体株式会社 ウェーハの製造方法
JP2009302409A (ja) * 2008-06-16 2009-12-24 Sumco Corp 半導体ウェーハの製造方法
JP5600867B2 (ja) * 2008-06-16 2014-10-08 株式会社Ｓｕｍｃｏ 半導体ウェーハの製造方法
US8247621B2 (en) 2008-10-14 2012-08-21 Invista North America S.A.R.L. Process for making 2-secondary-alkyl-4,5-di-(normal-alkyl)phenols
DE102009025242B4 (de) * 2009-06-17 2013-05-23 Siltronic Ag Verfahren zum beidseitigen chemischen Schleifen einer Halbleiterscheibe
US8338636B2 (en) 2009-08-07 2012-12-25 Invista North America S.A R.L. Hydrogenation and esterification to form diesters
CN101708593B (zh) * 2009-12-08 2013-01-09 中国电子科技集团公司第四十五研究所 化学机械抛光心轴传动装置
CN101875181B (zh) * 2010-05-31 2012-02-22 青岛理工大学 脆硬材料磨削机床
CN101972983B (zh) * 2010-08-11 2013-01-09 中国电子科技集团公司第四十五研究所 化学机械抛光心轴装置
CN102172885B (zh) * 2011-01-31 2013-05-15 北京通美晶体技术有限公司 衬底的抛光装置及其抛光的衬底
CN102179734A (zh) * 2011-03-14 2011-09-14 刘晓明 超硬刀片钝化抛光机
CN102229093B (zh) * 2011-07-01 2013-09-18 中国电子科技集团公司第四十五研究所 一种应用在晶片抛光设备上的升降加压机构
DE102011089570A1 (de) 2011-12-22 2013-06-27 Siltronic Ag Führungskäfig zum beidseitigen Schleifen von mindestens einem scheibenförmigen Werkstück zwischen zwei rotierenden Arbeitsscheiben einer Schleifvorrichtung, Verfahren zur Herstellung des Führungskäfigs und Verfahren zum gleichzeitigen beidseitigen Schleifen von scheibenförmigen Werkstücken unter Verwendung des Führungskäfigs
CN103123865B (zh) * 2013-02-26 2015-05-27 宁波韵升股份有限公司 一种磁性产品加工方法及自动分选设备
CN104669105B (zh) * 2013-11-26 2017-12-29 浙江汇锋塑胶科技有限公司 一种蓝宝石触摸面板的两面研磨方法
CN103817572A (zh) * 2014-02-18 2014-05-28 河南机电高等专科学校 一种离合器摩擦钢片修复装置
CN103847032B (zh) * 2014-03-20 2016-01-06 德清晶辉光电科技有限公司 一种大直径超薄石英晶片的生产工艺
JP6707831B2 (ja) * 2015-10-09 2020-06-10 株式会社Sumco 研削装置および研削方法
CN106425857A (zh) * 2016-11-18 2017-02-22 南京华东电子信息科技股份有限公司 一种新型中小型单片液晶面板抛光固定治具
CN107543837B (zh) * 2017-08-25 2020-02-21 郑州磨料磨具磨削研究所有限公司 一种砂轮精磨后硅片损伤层的检测方法
TWI656233B (zh) * 2017-10-26 2019-04-11 漢民科技股份有限公司 單晶圓處理裝置及其操作方法、傳送方法與準直器
CN108544329A (zh) * 2018-04-09 2018-09-18 中国工程物理研究院材料研究所 一种表面抛磨装置及其应用
WO2020056538A1 (zh) * 2018-09-17 2020-03-26 苏州迈创信息技术有限公司 自动研磨机
JP7217409B2 (ja) * 2020-01-24 2023-02-03 株式会社東京精密 亀裂進展装置及び亀裂進展方法
CN112692722A (zh) * 2020-12-24 2021-04-23 江苏天科合达半导体有限公司 打磨设备、打磨盘的加工方法以及碳化硅晶片的加工方法
CN113752111B (zh) * 2021-09-30 2023-11-21 浙江仲全数控科技有限公司 一种立式双端面磨床
CN113815127B (zh) * 2021-10-20 2023-06-02 山东中恒建设集团有限公司 一种建筑施工用物料周转切割装置
CN115008318B (zh) * 2022-06-16 2025-03-28 南京工业职业技术大学 一种气动加载式双面环抛机
CN116652707A (zh) * 2023-06-30 2023-08-29 中原内配集团鼎锐科技有限公司 一种刀具钝化设备及其钝化加工方法
CN116967852A (zh) * 2023-07-18 2023-10-31 家颖科技(苏州)有限公司 一种陶瓷打磨方法

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI727056B (zh) * 2016-07-22 2021-05-11 日商迪思科股份有限公司 研磨裝置

Also Published As

Publication number Publication date
DE19626396A1 (de) 1997-01-16
JPH09248740A (ja) 1997-09-22
KR100457718B1 (ko) 2005-04-06
JP3923107B2 (ja) 2007-05-30
DE19626396B4 (de) 2006-12-07
CN1096108C (zh) 2002-12-11
KR970008384A (ko) 1997-02-24
CN1145531A (zh) 1997-03-19

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MM4A Annulment or lapse of patent due to non-payment of fees