A7 A7 經濟部中央標準局貝工消費合作社印製 ___B7 五、發明説明（1 ) 〔技術領域〕 本發明係關於一種製造髙積體裝置之大口徑的砂晶圓 之製造方法及製造裝置，尤其，關於一種同時研削矽晶HI 之表背兩面的矽晶圓之製造技術。 〔以往之技術〕 在矽晶圓之製造方法，藉不銹鋼製內周刀刃切片圓柱 狀矽單結晶棒所得到之矽晶圓，係藉研磨盤使用遊離砥粒 研磨兩面，除去在切片過程所產生凹凸與破壞，俾提高平 行度。該矽晶圓係以蝕刻除去在研磨加工所形成的破壞層 加工變質層，又以化學拋光施以端面加工。 然而，爲了除去藉研磨加工所發生之表面的破壞層， 蝕刻之蝕刻截止量爲大約如2 0 ，故成爲需3 0 以上之蝕刻截止層。又，蝕刻後之研磨量也成爲如1 0 β m以上，因而惡化平坦度（例如第1 3圖所示，在 T T V ( t 〇 t a 1 t h i c k n e s s v a r i a t i ο η )爲約 2 8 . 1 ^ m )。 近幾年來，作爲矽晶園之直徑係普及成1 5 Omm或 200mm，又也開發至300mm，又，隨著裝置之高 積體化，例如擬在2 0 0 1年被實用化之1 G位元 DRAM，線寬度法則及焦點深度分別成爲0.18 ^ m * 0 . 7vm。爲此作爲被要求之平坦度，在 S F Q D ( Site, Frontsurface-reference’Site least Squares, deviation)，2 6 x 3 2 mm 面稹須達成 本紙ϋ度適用中國國家標準（CNS ) A4規格（210X 297公釐） ' —A 一 (請先閲讀背面之注意事項再填寫本頁) 裝. 訂 A7 B7 303488 五、發明説明（2 ) 〇· 12i^m 之平坦度（參照「THE NATOPNAL TECHNOLO-GY ROADMAP FOR SEMICONDUTORS」1 9 9 4 年，SEMICOND UTOR INDUSTRY ASSOCIATION出版之第 1 1 3 頁等）。又 ’若增大晶圓直徑，則在些微曲率也使翹曲量增大，因此 翹曲之問題成爲深刻。亦即，翹曲係不但在矽晶圓之製造 階段，而且在裝置加工時之成膜，乾蝕刻，熱處理也產生 。若翹曲小之矽晶圓，則可特定在各階段之翹曲》亦即， 將例如外徑3 0 Omm之矽晶園放在平板上測定翹曲時， 矽晶片係以自重變形，因視翹曲係成爲一半以下，因此只 有用翹曲較少之矽晶圓之製造方法作爲管理之方法》 爲了提髙平坦度，考量代替研磨加工實行破壞爲3 V m以下之研磨加工資行切片加工後之晶圓面。又，切片 後之厚度係直徑1 5 0mm晶圓爲薄至7 0 0 ，而直 徑2 0 0mm晶圓爲薄至8 0 0mm，又直徑3 0 0mm 晶圚爲薄至9 0 0 jum。 然而，在以往就使用之研削盤係具有圓環狀之研削刀 刃，如第1 4圖所示，構成一面（圖爲上面）一面地研削 載置固定在真空吸附盤3 1的矽晶圓3 2。 亦即，如第1 4A圖所示，在真空吸附盤3 1放置矽 晶圓32，研削該矽晶圓32之一面時，如第14B圖所 示，當藉真空吸附盤3 1真空吸附矽晶圓3 2在下面時， 因矽晶圓3 2係如上述地極薄，因此被吸住在真空吸附盤 3 1 ，上述下面係成爲平坦面。又，一點鏈線3 3係表示 研削面》因此，如第1 4 C圖所示，在研削後解放真空吸 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） (請先閲讀背面之注意事項再填寫本頁) 裝- -訂 經濟部中央標準局員工消費合作社印裝 -5 - 經濟部中央標準局員工消費合作社印製 A7 ______B7 五、發明説明（3 ) 附盤3 1之真空吸附，則矽晶圓3 2之夾住面（下面）係 成爲原來形狀，而相反之研削面係成爲凸狀》亦即，經真 空吸附之切削面轉印至相反面。又真空吸附相反側之面時 。該凹部在解放真空吸附後轉印成凸部，而切片形狀會留 在矽晶圓之表背面。故在研削後須實行輕研磨加工（參照 本案申請人所申請之日本特開平6 - 1 0 4 2 2 9號公報 )’而無法充分享受依研削所產生破壞層之減低效果。 因此，在本案申請人所申請之日本特開昭6 2 _ 9 6 4 0 0號公報，係在剛性大之晶錠端面施行研削加工 後’切片加工切片矽晶圓，揭示真空吸附該研削面而研肖!J 切片加工面之方法，藉由該方法製造平行度優異且翹曲少 的砂晶圓。 又，藉內周刀刃切片加工外徑2 0 Omm之火口徑晶 錠時，則內周刀刃之刃厚成爲0. 38jt/m，又因沒有切 片外徑3 0 0mm火口徑晶錠所用之火口徑不銹鋼鋼板， 故無法實行內周刀刃切片加工。因此，鋼絲鋸被實用化， 鋼絲鋸係線直徑爲0.18#m，使切斷加工尺寸變小， 而可提高良品率。然而，依鋼絲鋸所產生之切斷面係起因 於鋼絲之偏向，與內周刀刃切片加工面相比較凹凸變大， 又，在切斷中因將鋼絲之移送成爲相反而會有段差。又， 因切斷中，鋼絲摩耗而使線徑變小，故如第1 5圖所示， 矽晶圓3 4之切片完成部分變厚，而在矽晶圓3 4之兩面 34a ，34b形成推拔》因此，苦真空吸附鋼絲鋸面而 實行研削加工時，則軸方向之結晶面產生從指定角度偏約 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） ~ (請先閲讀背面之注意事項再填寫本頁) 裝. 訂- 經濟部中央標準局貝工消費合作社印製 A7 一 _B7 五、發明説明（4 ) 0 . 02° 〜〇. 05° ° 又，爲了製造1 G位元以上之高積體裝置時，研磨矽 晶圓之背面，提髙背面基準之平坦度，又由此將粒子之發 生成爲1/1 0以下。因此，實行揭示於上述日本特開平 6 - 1 〇 4 2 2 9號公報的背面之半拋光或兩面同時研磨 〇 上述之一面一面之研削，有以下之不方便。亦即，在 矽晶圓之兩面留有切片面轉印，而無法置換研磨加工。又 ，因後績之蝕刻及化學機械研磨加工尺寸變大，而很難得 到目的之平坦度，又，很難將兩面之加工變成爲相同，而 容易產生翹曲。 本發明之目的係在於提供一種尤其是可製作製造1G 位元以上之髙積體裝置時被要求之高平坦度的矽晶圚而能 代替研磨加工的兩面切削方法及裝置。又，其目的係在於 提供一種減少蝕刻之除去尺寸，又可減低研磨量的兩面研 削方法及裝置。又，本發明之目的係在於提供一種防止矽 晶圓之裂痕的兩面研削方法及裝置。 〔發明之揭示〕 本發明的矽晶圓之製造方法，其特徵爲具備：切片矽 單結晶棒來製作矽晶圚的切片過程，及同時地研削該矽晶 圓之表背面的兩面同時研削過程等。 又’本發明係在上述兩面同時研削過程中，將矽晶圚 夾夾在兩面研削裝置之上側砥石下側砥石之間，並同時地 本紙張尺度逋用中國國家標準（CNS )八4規格（210X297公釐） (請先閲讀背面之注意事項再填寫本頁) 裝· 訂 A7 B7 30S488 五、發明説明（5 ) 研削該矽晶圓之表背面時，在該矽晶圓之表背面全領域供 應研削液者。 (請先閲讀背面之注意事項再填寫本頁) 又，本發明係在上述兩面同時研削過程中，控制矽晶 圓之表背面溫度者。 又，本發明係在上述兩面同時研削過程後，在矽晶圓 施以蝕刻而除去切削破壞，又，研磨該矽晶圓之兩面者。 又，本發明的矽晶圓之製造裝置，其特徵爲具備：在 板狀之上側砥石與下側砥石之間夾住矽晶圓而同時地研削 矽晶圓之表背面的兩面研削手段，及控制該兩面研削時之 矽晶圓之表背面溫度的溫度控制手段等。 又，本發明中，上述溫度控制手段係在以兩面研削手 段研削中之矽晶圜的表背面全領域藉供應研削液，來控制 該溫度者。 經濟部中央標準局貝工消費合作社印繁 又，本發明中，上述溫度控制手段係由：由上述上側 砥石與上述下側砥石之各內周面所劃成的水盤，及從分別 形成於上述上側砥石與上述下側砥石的各該研削面流出研 削液所用的研削液通路，及在上述水盤及上述研削液通路 供應研削液所用的研削液供應手段等所構成者》 又，在本發明，上述兩面研削手段，係由： 以互相平行狀態水平地配置，相對向之表面成爲研削 面，且在上述研削面分別研削上述矽晶圓之表背面的上側 砥石與下側砥石，及 在水平面內互相地相對運動上述上側砥石與上述矽晶 圓，而且在水平面內互相地相對運動上述下側砥石與上述 本紙張尺度適用中國國家標準（CNS > A4規格（210X297公釐） -8 - 經濟部中央標準局員工消費合作社印製 A7 ____B7 五、發明説明（6 ) 矽晶圓所用的相對運動手段，及 將上述上側砥石推壓於載置於上述下側砥石所用的推 壓手段等所構成。 又，在本發明中，上述矽晶圓係保持在具備外周齒的 托架，另一方面，上述上側砥石與上述下側砥石係在各該 中央部具備開口部： 上述相對運動手段係由 嚙合於上述托架之上述外周齒地設於上述開口部的太 陽齒輪，及 嚙合於上述托架之上述外周齒地設於上述上側砥石與 上述下側砥石之外方，將上述托架在上述太陽齒輪之周圍 施以公轉與自轉所用的環狀內周齒輪，及 將上述太陽齒輪與上述環狀內周齒輪施以旋轉所用的 驅動機構等所構成。 又，本發明係具備夾住支撐上述托架之上述太陽齒輪 側之端部上下面所用的上下一對間隔件者。 以下，說明本發明之作用。 因未實行研磨，因此，與研磨加工後之矽晶圓比較， 可得到髙平坦度之矽晶圓。結果，該矽晶圓係與經研磨矽 晶圓相比較可減少其蝕刻截止量。又，與此時之蝕刻面的 凹凸也實行研磨相比較也可減小，又，在後績過程之研磨 以較少之研磨置即可以。 又，將本發明與依一面一面地研削時相比較時，在該 晶圓表面不會留有轉印在切片面之凹凸。故不必研磨加工 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐）_ (請先閱讀背面之注意事項再填寫本頁) 裝· -丁 _ -s·* B7 B7 經濟部中央標準局員工消費合作社印製 五、發明説明（7 ) 研削後之晶圓即可施行蝕刻。又’只有留下依研磨加工的 破壞量之約1/1 0，減少蝕刻截止量，顯著地防止因触 刻所產生之平坦度之降低。 作爲兩面同時研削之特徵，不必將加工彈性體之矽晶 圓所用的基準面放在材料（矽晶圓）側。研削之基準面係 可說由裝置側之研削面（定盤面）的活性假想面（實效作 用面）所構成。但是受材料之剛性之影響。使用以正弦曲 線表面化矽晶圓之表面形狀的模型，檢討各精修情形。 如第8 A圖所示，經切片之矽晶圓3 0的表面，係分 別存有凹凸，該凹凸係如第8 B圖及第8 C圖所示，由「 厚度成分」與「髯曲成分」所構成。又，簿曲成分係作爲 晶圓表背面之中間線》 從一面加工第8 D圖之矽晶圓3 0成爲均勻厚度時（ 參照第8 E圖），如第8 F圖所示，可形成模仿非加工側 之凹凸面的表面（此稱爲表面轉印）。 又，加壓矽晶圓之兩面而從兩面同時加工時（參照第 8G圖），並從轉厚部分之兩面施以加工（參照第8 Η圖 )，可除去厚度成分之凹凸，惟其相反面，因矽晶圓係彈 性體，因此，在加壓後開放加工壓時，如第8 I圖所示， 有留下彎曲成分之虞。 如上所述，依照本發明的矽晶圓之製造方法，可由兩 面研削製作高平行度髙平坦度的矽晶圓。又，此時*可防 止上下側砥石的溫度上昇，而在矽晶圓之全領域將其研削 量成爲均勻，並可將矽晶圓全面平坦地形成而可減少翹曲 本乡氏張尺度逋用中國國家標準（CNS ) Α4規格（210X297公釐) 一 10 - { 裝------訂------^ (請先閲讀背面之注意事項再填寫本頁) 經濟部中央橾準局員工消費合作社印製 A7 __B7 五、發明説明（8 ) 。如此，依端面研磨一面，可製作一面研磨晶圓。又，藉 在兩面研削後之晶圓的表背兩面施以兩面同時研磨，可製 作兩面研磨的矽晶圓。 又因兩面研削後之矽晶圓係破壞層較少，因此，即使 在加工速度較慢之化學機械研磨也可除去破壊層，而施以 背面之半拋光，或在表背兩面施以同時研磨，可經濟地製 作除去研削破壞且兩面研磨之矽晶圓。 〔發明之較佳實施之形態〕 以下，參照圖式說明本發明之一實施形態例子。 第1圖係表示本發明之一實施例之兩面研削裝置的整 體構成圖，表示上側砥石迴避至上昇位置之狀態，第2圖 係表示本發明之一實施例之兩面研削裝置的整體構成圖， 表示下降上側砥石施以研削狀態，第3圖係表示本發明之 一實施例之兩面研削裝置之主要部的斜視圖，第4圖係表 示本發明之一實施例之兩面研削裝置之主要部的平面圖， 第5圖係表示本發明之一實施例之兩面研削裝置之主要部 的縱剖面圖。 該兩面研削裝置係將保持於托架（托架齒輪）1 4的 矽晶圓1之表背面，藉由圓板狀之上側砥石（上定盤） 1 3及下側砥石（下定盤）1 2同時分別施以研削者。上 側砥石13係上下移動及軸線周圍地旋轉驅動’一方面， 下側砥石1 2也其在軸線周圍旋轉驅動。 在裝置本體3，向垂直方向延伸的下台驅動軸5經由 本紙張尺度適用中國國家標準（CNS ) A4規格（2丨0X297公釐） (請先閱讀背面之注意事項再填寫本頁) 裝·A7 A7 Printed by the Beigong Consumer Cooperative of the Central Bureau of Standards of the Ministry of Economic Affairs ___B7 V. Description of the invention (1) [Technical Field] The present invention relates to a method and a device for manufacturing a large-diameter sand wafer for manufacturing a high-profile device, In particular, it relates to a silicon wafer manufacturing technology that simultaneously grinds both the front and back sides of silicon crystal HI. [Conventional technology] In the manufacturing method of silicon wafers, silicon wafers obtained by slicing cylindrical silicon single crystal rods with stainless steel inner peripheral blades are used to grind both sides by free abrasive grains by a grinding disc to remove the production during the slicing process Concavo-convex and damage, to improve parallelism. The silicon wafer is etched to remove the damage layer formed by the grinding process, and the modified layer is processed, and the chemical polishing is applied to the end surface processing. However, in order to remove the damage layer on the surface that occurs through the polishing process, the etching cut-off amount is about 20, so an etching cut-off layer of 30 or more is required. In addition, the polishing amount after etching becomes 10 β m or more, which deteriorates the flatness (for example, as shown in FIG. 13, T T V (t 0 t a 1 t h i c k n e s s v a r i a t i ο η) is about 28.1 ^ m). In recent years, the diameter of the silicon crystal garden has been popularized as 15 Omm or 200mm, and it has also been developed to 300mm. Also, with the high integration of devices, for example, 1G to be put into practical use in 2001 For bit DRAM, the rule of line width and depth of focus become 0.18 ^ m * 0.7vm, respectively. For this reason, as the required flatness, in SFQD (Site, Frontsurface-reference'Site least Squares, deviation), the 2 6 x 3 2 mm surface must be up to the cost paper. The Chinese National Standard (CNS) A4 specification (210X 297 Mm) '—A one (please read the precautions on the back before filling in this page). Pack. Order A7 B7 303488 5. Description of invention (2) ○ · 12i ^ m flatness (refer to "THE NATOPNAL TECHNOLO-GY ROADMAP FOR SEMICONDUTORS "1949, SEMICOND UTOR INDUSTRY ASSOCIATION, page 1 1 3, etc.). Also, if the diameter of the wafer is increased, the amount of warpage increases at a slight curvature, so the problem of warpage becomes serious. That is, the warpage is not only in the silicon wafer manufacturing stage, but also in film formation, dry etching, and heat treatment during device processing. For silicon wafers with small warpage, the warpage at each stage can be specified. That is, when a silicon wafer with an outer diameter of 300 mm is placed on a flat plate to measure the warpage, the silicon wafer is deformed by its own weight. Because the warpage is less than half, only the manufacturing method of silicon wafers with less warpage is used as the management method. In order to improve the flatness, consider the replacement of the grinding process and perform the grinding process to destroy the slice of the grinding process below 3 V m The wafer surface after processing. In addition, the thickness after slicing is as thin as 700 mm in diameter of 150 mm wafers, as thin as 800 mm in diameter of 200 mm wafers, and as thin as 90 mm in diameter of 300 mm. However, the grinding disc used in the past has a circular grinding blade, and as shown in FIG. 14, the silicon wafer 3 mounted and fixed on the vacuum suction disc 3 1 is ground on one side (the upper side in the figure). 2. That is, as shown in FIG. 14A, when the silicon wafer 32 is placed on the vacuum suction pad 31, and one side of the silicon wafer 32 is ground, as shown in FIG. 14B, when the vacuum suction pad 3 1 vacuum sucks silicon When the wafer 32 is underneath, the silicon wafer 32 is extremely thin as described above, so it is attracted to the vacuum suction pad 3 1, and the bottom surface becomes a flat surface. In addition, the one-point chain line 3 3 represents the grinding surface. Therefore, as shown in Figure 14C, after vacuuming, the paper size of the vacuum suction plate is applicable to the Chinese National Standard (CNS) A4 specification (210X297 mm) (please read first (Notes on the back and then fill out this page) Outfit--Ordered by the Ministry of Economic Affairs Central Standards Bureau Employee Consumer Cooperative Printed -5-Printed by the Ministry of Economic Affairs Central Standards Bureau Employee Consumer Cooperative A7 ______B7 V. Description of Invention (3) Attached Disk 3 1 With vacuum suction, the sandwiched surface (lower surface) of the silicon wafer 32 becomes the original shape, and the opposite grinding surface becomes convex ", that is, the vacuum-absorbed cutting surface is transferred to the opposite surface. When vacuum sucking the opposite side. The concave part is transferred into a convex part after releasing vacuum suction, and the slice shape will be left on the front and back of the silicon wafer. Therefore, light grinding must be carried out after grinding (refer to Japanese Patent Application Laid-Open No. 6-1 0 4 2 2 9 filed by the applicant of this case), and the effect of reducing the damage layer due to grinding cannot be fully enjoyed. Therefore, Japanese Patent Laid-Open No. 6 2 _ 9 6 4 0 0 0 0 0 0 0 0 0 applied for by the applicant in this case, after performing grinding processing on the end face of the rigid ingot, slicing and slicing the silicon wafer to reveal the vacuum adsorption of the grinding surface And research Xiao! J method of slicing the processed surface, by this method to produce sand wafers with excellent parallelism and less warpage. In addition, when the inner circumference blade is sliced to process a fire caliber ingot with an outer diameter of 2 O Omm, the blade thickness of the inner circumference blade becomes 0.38 jt / m, and because there is no fire with a sliced outer diameter 3 0 0mm fire caliber ingot Caliber stainless steel plate, so it is impossible to carry out the inner blade cutting process. Therefore, the wire saw is put into practical use. The wire diameter of the wire saw is 0.18 # m, which reduces the cutting size and improves the yield. However, the cut surface generated by the wire saw is caused by the deviation of the wire, and the unevenness becomes larger compared to the inner peripheral blade slicing surface. In addition, there is a step difference due to the transfer of the wire during cutting. In addition, the wire diameter becomes smaller due to the wear of the steel wire during cutting, so as shown in FIG. 15, the sliced portion of the silicon wafer 34 becomes thicker, and is formed on both sides 34a and 34b of the silicon wafer 34 "Pushing" Therefore, when bitter vacuum suctions the wire saw face and carries out the grinding process, the crystal surface in the axis direction is offset from the specified angle. This paper size is applicable to the Chinese National Standard (CNS) A4 specification (210X297 mm) ~ (please first Read the precautions on the back and then fill out this page) Packing. Ordering-Printed by the Ministry of Economic Affairs Central Standards Bureau Beigong Consumer Cooperative A7 I_B7 V. Description of the invention (4) 0. 02 ° ~ 〇. 05 ° ° Also, for manufacturing In the case of a high-integration device with 1 G-bit or more, the back surface of the silicon wafer is polished to improve the flatness of the back surface reference, thereby reducing the occurrence of particles to 1/10 or less. Therefore, the semi-polishing of the back surface or the simultaneous grinding of both surfaces disclosed in Japanese Patent Laid-Open No. 6-1 2 4 2 9 is carried out. Grinding of one of the above surfaces is inconvenient as follows. In other words, the transfer of the slicing surface is left on both sides of the silicon wafer, and the polishing process cannot be replaced. In addition, it is difficult to obtain the flatness of the target due to the larger size of the etching and chemical mechanical polishing processing, and it is difficult to make the processing on both sides the same, and it is easy to produce warpage. The object of the present invention is to provide a double-sided cutting method and apparatus that can produce silicon flats with high flatness, which is required when manufacturing a high-gap body device of 1 G bit or more, and can replace the grinding process. In addition, the object of the invention is to provide a method and a device for grinding both sides of the etching to reduce the removal size and the grinding amount. In addition, an object of the present invention is to provide a method and apparatus for grinding both sides of a silicon wafer to prevent cracks. [Disclosure of the Invention] The method for manufacturing a silicon wafer of the present invention is characterized by a slicing process of slicing a silicon single crystal rod to make a silicon crystal, and a simultaneous grinding process of simultaneously grinding both sides of the front and back sides of the silicon wafer Wait. Also, in the present invention, during the simultaneous grinding on both sides, the silicon crystal clip is sandwiched between the upper side grates and the lower side grinds of the grinding device on both sides, and the Chinese paper standard (CNS) 84 specifications are used at the same time. 210X297mm) (Please read the precautions on the back before filling in this page) Binding · Order A7 B7 30S488 5. Invention Description (5) When grinding the back surface of the silicon wafer, the entire area of the back surface of the silicon wafer Supply of grinding fluid. (Please read the precautions on the back side before filling out this page) In addition, the present invention is to control the temperature of the front and back sides of the silicon wafer during the simultaneous grinding of the above two sides. In addition, the present invention is to etch the silicon wafer to remove cutting damage after the simultaneous grinding of the two surfaces, and to grind both sides of the silicon wafer. In addition, the silicon wafer manufacturing apparatus of the present invention is characterized by including: a two-sided grinding means for simultaneously grinding the front and back surfaces of the silicon wafer by sandwiching the silicon wafer between the upper and lower grates of the plate shape, and Temperature control means for controlling the temperature of the front and back surfaces of the silicon wafer during the grinding on both sides. Furthermore, in the present invention, the temperature control means controls the temperature by supplying a grinding fluid in the entire area of the front and back surfaces of the silicon crystal that is being ground by the two-side grinding method. The Ministry of Economic Affairs, Central Bureau of Standards, Beigong Consumer Cooperative Society, In the present invention, the temperature control means is composed of: a water tray divided by the inner peripheral surfaces of the upper side stone and the lower side stone, and formed from the The composition of the grinding fluid passage for the grinding fluid to flow out of the grinding fluid from each of the grinding surfaces of the upper grindstone and the lower gravel, and the grinding fluid supply means for supplying the grinding fluid to the water pan and the grinding fluid passage. Also, in the present invention, The above-mentioned two-side grinding means is: arranged horizontally in parallel with each other, the opposite surfaces become grinding surfaces, and grinding the upper side stone and the lower side stone on the front and back sides of the silicon wafer on the grinding surface, and in the horizontal plane The above-mentioned upper stone and the above-mentioned silicon wafer are moved relative to each other, and the above-mentioned lower stone and the above-mentioned paper scale are moved relative to each other in a horizontal plane. The Chinese National Standard (CNS & A4 specifications (210X297 mm)) is applicable -8-Ministry of Economic Affairs A7 ____B7 printed by the Consumer Cooperative of the Central Bureau of Standards V. Description of invention (6) Relative movement method used for silicon wafers And pressing means for pressing the upper side whetstone on the lower side whetstone, etc. In addition, in the present invention, the silicon wafer system is held in a bracket provided with outer peripheral teeth. The upper side stone and the lower side stone are provided with openings at each central portion: the relative movement means is a sun gear provided at the opening by the outer peripheral teeth meshed with the bracket, and the meshed with the bracket The outer peripheral teeth are provided outside the upper side stone and the lower side stone, the ring-shaped inner peripheral gear for revolution and rotation of the bracket around the sun gear, and the sun gear and the ring-shaped inner The peripheral gear is configured by a driving mechanism for rotating, etc. In addition, the present invention is provided with a pair of upper and lower spacers used to sandwich the upper and lower surfaces of the end portion of the sun gear side supporting the bracket. Because polishing is not carried out, compared with the silicon wafer after the polishing process, the silicon wafer with high flatness can be obtained. As a result, the silicon wafer is the same as the polished silicon wafer. Compared with wafers, the etching cut-off amount can be reduced. In addition, the unevenness of the etching surface at this time can also be reduced compared with polishing, and the polishing in the subsequent process can be reduced with less polishing. When comparing the present invention with the grinding process side by side, there will be no unevenness transferred to the slice surface on the surface of the wafer. Therefore, it is not necessary to grind. The paper size is applicable to the Chinese National Standard (CNS) A4 specification (210X297 %) _ (Please read the precautions on the back before filling in this page) Installed ·-丁 _ -s · * B7 B7 Printed by the Employee Consumer Cooperative of the Central Bureau of Standards of the Ministry of Economy V. Invention description (7) The wafer after grinding Etching can be performed. Also, only about 1/10 of the amount of damage according to the grinding process is left, reducing the etching cut-off amount, and significantly preventing the flatness caused by the contact etching from being reduced. As a feature of simultaneous grinding on both sides, it is not necessary to change The reference surface for processing the silicon wafer of the elastomer is placed on the material (silicon wafer) side. The reference surface for grinding can be said to be composed of the active virtual surface (effective surface) of the grinding surface (fixed plate surface) on the device side. However, it is affected by the rigidity of the material. Using a model that sine curves the surface shape of the silicon wafer, review each refinement. As shown in FIG. 8A, the surface of the sliced silicon wafer 30 has irregularities, which are shown in FIGS. 8B and 8C, and are composed of "thickness components" and "branches" Composition ". In addition, the curvilinear composition is used as the middle line on the back surface of the wafer. "When processing the silicon wafer 30 in Figure 8D from one side to a uniform thickness (see Figure 8E), it can be formed as shown in Figure 8F. A surface that imitates the uneven surface on the non-processing side (this is called surface transfer). In addition, when both sides of the silicon wafer are pressed and processed from both sides at the same time (refer to Figure 8G), and processing is performed from both sides of the thickened portion (refer to Figure 8H), the unevenness of the thickness component can be removed, but the opposite side Because of the silicon wafer-based elastomer, when the processing pressure is released after pressurization, as shown in Fig. 8I, there is a risk of bending components remaining. As described above, according to the method of manufacturing a silicon wafer of the present invention, a silicon wafer with high parallelism and high flatness can be manufactured by grinding on both sides. In addition, at this time, the temperature of the upper and lower side stone can be prevented from rising, and the grinding amount of the silicon wafer can be made uniform in the entire field, and the silicon wafer can be formed flatly to reduce warpage. Use the Chinese National Standard (CNS) Α4 specification (210X297mm) 10-10-{install ------ order ------ ^ (please read the precautions on the back before filling out this page) Central Ministry of Economic Affairs A7 __B7 printed by the quasi-bureau employee consumer cooperative V. Description of invention (8). In this way, one side is polished according to the end surface, and one side polished wafer can be produced. In addition, by grinding both sides of the wafer on both sides, the front and back sides of the wafer are polished on both sides at the same time to make a silicon wafer polished on both sides. Since the silicon wafers on both sides are ground, there are few damaged layers. Therefore, even in the slower processing speed of chemical mechanical polishing, the broken layer can be removed, and semi-polishing on the back side can be applied, or simultaneous polishing can be applied on both sides of the front and back sides. , It can economically produce silicon wafers that are free of grinding damage and polished on both sides. [Preferable embodiment of the invention] Hereinafter, an example of an embodiment of the invention will be described with reference to the drawings. Figure 1 is a diagram showing the overall configuration of a double-sided grinding device according to an embodiment of the present invention, showing the state in which the upper side stone is avoided to an ascending position, and Figure 2 is a diagram showing the overall configuration of a double-sided grinding device according to an embodiment of the present invention. Fig. 3 is a perspective view showing the main part of a two-sided grinding device according to an embodiment of the invention, and Fig. 4 is a view showing the main part of a two-sided grinding device according to an embodiment of the invention. A plan view, FIG. 5 is a longitudinal cross-sectional view showing the main part of a double-sided grinding device according to an embodiment of the present invention. This two-side grinding device is to hold the front and back surfaces of the silicon wafer 1 held by a carrier (carrier gear) 14 by a disc-shaped upper side stone (upper fixed plate) 1 3 and a lower side stone (lower fixed plate) 1 2 Those who applied grinding at the same time. The upper side stone 13 moves up and down and rotates around the axis. On the one hand, the lower side stone 12 also rotates around the axis. In the device body 3, the lower drive shaft 5 extending in the vertical direction is applicable to the Chinese National Standard (CNS) A4 specification (2 丨 0X297mm) through this paper standard (please read the precautions on the back before filling this page).
、1T 經濟部中央標準局貝工消費合作社印裝 A7 __B7 _ 五、發明説明（9 ) 軸承1 6旋轉自如地支撐。該下台驅動軸5之小徑下端部 5a ，係未予圖示之帶輪成爲同軸地一體裝設的帶輪裝設 部。將未予圖示之驅動馬達的旋轉經由皮帶（未予圖示） 傳動上述帶輪，俾將下台驅動軸5可旋轉在其軸線周圍》 在上述下台驅動軸5 ，於上端旋轉自如地支撐具有太陽齒 輪1 2 A的太陽齒輪驅動軸4。太陽齒輪驅動軸4係向垂 直方向延伸，其下端部係成爲未予圖示之帶輪同軸地—體 裝設的帶輪裝設部，將未予圖示之驅動馬達之旋轉經由皮 帶（未予圖示）傳動至該帶輪，可將太陽齒輪驅動軸4旋 轉在其軸線周圍。 在裝置本體3旋轉自如地支撐具有旋轉下述之環狀內 周齒輪（內齒輪）17所用之齒輪26的驅動軸2 5 »該 驅動軸2 5也藉未予圖示之驅動馬達，旋轉在其軸線周圍 。又，由該驅動馬達或旋轉太陽齒輪驅動軸4所用驅動馬 達等構成驅動機構。在上述下台驅動軸5上，經由圓盤狀 之間隔件構件2 4固定有圓盤狀之機座（下台）1 1 ，在 該機1 1上以水平狀態固定有下述之下側砥石1 2。 記號2係表示上台，該上台2係以水平狀態支撐在固 定於上述裝置本體3之驅動手段（例如汽缸）9之桿9 a 。在該上台2之下面，經由連結構件7及上砥石間隔件構 件6以水平狀態安裝有圓板狀之上側砥石1 3。與上側砥 石1 3成爲一體的圓盤狀之上述上砥石間隔件構件6係旋 轉自如地支撐於上台2，又，在上砥石間隔件構件6之外 周形成有外周齒6 a。拉入上述汽缸9之桿9 a時，則可 本紙張尺度適用中國國家標隼（CNS ) A4規格（210X297公釐) " -12 - (請先閲讀背面之注意事項再填寫本頁) 裝. 訂 303488 A7 B7 五、發明説明（ίο ) 上昇上側砥石13 (第1圖之狀態）’―方面’突出桿 9 a時，則下降上側砥石1 3 ’與下側砥石1 2 —起可加 壓矽晶圓1 (第2圖之狀態）。如上所述’上側砥石13 (請先閱讀背面之注意事項再填寫本頁) 係藉推壓手段（在本例子爲由汽缸9之昇降手段）設成可 自由向上下方向移動之狀態。又’代替汽缸9之昇降手段 ，也可採用例如由齒條，小齒輪等所成的滑動機構。 在上台2固定有驅動馬達8 ’而在驅動馬達8之旋轉 軸（輸出軸）8 a同軸地一體固定有齒輪1 0。該齒輪 1 0係嚙合於上述上砥石間隔件構件6之外周齒6 a »由 此，將驅動馬達8之旋轉經由上砥石間隔件構件6傳動至 上側砥石1 3，而可將上側砥石旋轉在其軸線周圍。 經濟部中央標準局員工消費合作社印製 在上述太陽齒輪1 2 A與環狀內周齒輪1 7之間，複 數枚（在例子爲3枚）之圓板狀托架1 4，係配設成將形 成於其外周的外周齒分別噛合於該太陽齒輪12A及環狀 內周齒輪1 7之內周齒。亦即上述托架1 4係形成作爲分 別對太陽齒輪12A及環狀內周齒輪17之行星齒輪之動 作。在各托架1 4分別設有收容一枚矽晶圓1的收容孔 1 5。這些矽晶圓1係分別裝填於上述托架1 4之收容孔 1 5，各該下表面設於下側砥石1 2上成爲滑接自如之狀 態。又’托架1 4之厚度係形成比矽晶圖之厚度小。又， 在這些矽晶圓1之上面，上側砥石1 3成爲互相成爲滑接 自如之狀態。該上側砥石1 3係於其中央部具有開口部 1 3 B ’下側砥石1 2也具有與上述開口部1 3 B同樣之 開口部1 2B，上，下側砥石1 3，1 2係外徑及內徑大 氏張尺度顧中家縣（CNS ) A4規格（210X297公釐)~ -13 - 經濟部中央標率局員工消費合作社印製 A7 B7 五、發明説明（11 ) 約相等，爲球狀石墨鐮鐵製之薄圓板體。 如上所述，在這些上側砥石1 3與下側砥石1 2之間 介裝，保持矽晶圓1而同時地研削其表面兩面。亦即，矽 晶圓1係保持在具有外周齒之托架1 4 ’在該托架1 4形 成有可插入矽晶圓1的收容孔（圓孔）1 5。又，托架 1 4之外周齒係嚙合於太陽齒輪1 2A，同時也噛合於環 狀內周齒輪17之內周齒。環狀內周齒輪17配設成包圍 下側砥石1 2而比下側砥石1 2之外徑大。又，在本例子 ，具備三件保持一枚矽晶圓1之托架1 4，能同時地兩面 研削三枚矽晶園1者，惟並不被限定於此。又，在上側砥 石1 3之研削面（下面）及下側砥石1 2之研削面（上面 )，各形成有向徑向及周方向延伸的複數條放射溝及圓周 溝。 以下，說明上述兩面研削裝置之主要部的詳細構成。 如第1圖至第5圖所示，記號1 2係載置有作爲被研 削物之矽晶圓1的下側砥石》該下側砥石1 2係於其中央 部形成有圓形開口部（中心孔）12 B的圚盤體，載置固 定於上述機座1 1。記號2 1 a係載置於下台驅動軸5上 的間隔件支撐構件，該間隔件支撐構件2 1 a係插穿於上 述太陽齒輪驅動軸4。又，該間隔件支撐構件2 1 a係不 會與下台驅動軸5 —起旋轉。 記號1 2 C係表示載置在上述間隔件支撐構件2 1上 的下間隔件，在該下間隔件1 2 C上，載有各托架1 4之 太陽齒輪1 2 A側之端部。又，在該下間隔件1 2 C上載 本紙張尺度適用中國國家標準（CNS > Α4規格（21 〇 X 297公釐） -----·穿-- {請先閲讀背面之注意事項再填寫本頁), 1T Printed by Beigong Consumer Cooperative of Central Bureau of Standards, Ministry of Economic Affairs A7 __B7 _ V. Description of Invention (9) The bearing 16 is rotatably supported. The small-diameter lower end portion 5a of the lower drive shaft 5 is a pulley installation portion in which a pulley (not shown) is coaxially and integrally installed. The rotation of a drive motor (not shown) is driven through a belt (not shown) to drive the pulley, so that the lower drive shaft 5 can be rotated around its axis. The lower drive shaft 5 can be rotatably supported at the upper end. The sun gear 1 2 A's sun gear drives the shaft 4. The sun gear drive shaft 4 extends in the vertical direction, and the lower end portion thereof becomes a pulley installation part coaxially mounted on the body (not shown). The rotation of the drive motor not shown is passed through a belt (not (Pictured) Transmission to this pulley can rotate the sun gear drive shaft 4 around its axis. The device body 3 rotatably supports a drive shaft 2 5 having a gear 26 for rotating an inner ring gear (inner gear) 17 described below »The drive shaft 25 is also rotated by a drive motor not shown Around its axis. In addition, a drive mechanism is constituted by the drive motor, the drive motor used for rotating the sun gear drive shaft 4, and the like. A disk-shaped base (lower table) 1 1 is fixed to the lower table drive shaft 5 via a disk-shaped spacer member 24, and the following lower side whetstone 1 is fixed to the machine 1 1 in a horizontal state. 2. The symbol 2 represents a stage, and the stage 2 is supported in a horizontal state by a rod 9 a of a driving means (for example, a cylinder) 9 fixed to the device body 3 described above. Under the upper table 2, a disc-shaped upper side whetstone 13 is mounted in a horizontal state via a coupling member 7 and an upper whetstone spacer member 6. The disc-shaped upper whetstone spacer member 6 integrated with the upper whetstone 13 is rotatably supported on the upper stage 2, and outer peripheral teeth 6a are formed on the outer periphery of the upper whetstone spacer member 6. When the rod 9a of the above cylinder 9 is pulled in, the paper size can be applied to the Chinese National Standard Falcon (CNS) A4 specification (210X297mm) " -12-(please read the precautions on the back and fill in this page) Order 303488 A7 B7 5. Description of the invention (ίο) When the upper side grindstone 13 (the state of the first picture) is raised from the “side” protruding rod 9 a, the upper side grindstone 1 3 'and the lower side grindstone 1 2 can be added together. Press silicon wafer 1 (state in Figure 2). As mentioned above, the upper side whetstone 13 (please read the precautions on the back before filling in this page) is set by the pushing means (in this example, the lifting and lowering means of the cylinder 9) to be free to move up and down. In addition, instead of the lifting and lowering means of the cylinder 9, a sliding mechanism made of a rack, a pinion, etc. may be used, for example. A drive motor 8 'is fixed to the upper stage 2, and a gear 10 is coaxially fixed to the rotating shaft (output shaft) 8a of the drive motor 8. The gear 10 is meshed with the outer peripheral teeth 6 a of the upper whetstone spacer member 6 »thereby, the rotation of the drive motor 8 is transmitted to the upper whetstone 13 via the upper whetstone spacer member 6, and the upper whetstone can be rotated at Around its axis. The employee consumer cooperative of the Central Bureau of Standards of the Ministry of Economic Affairs printed between the sun gear 1 2 A and the ring-shaped inner peripheral gear 17, a plurality of (in the example, 3) disk-shaped brackets 14 are provided as The outer peripheral teeth formed on the outer periphery are respectively meshed with the inner peripheral teeth of the sun gear 12A and the ring-shaped inner peripheral gear 17. That is, the carrier 14 is formed as a planetary gear for the sun gear 12A and the ring-shaped inner peripheral gear 17, respectively. Each tray 14 is provided with a receiving hole 15 for receiving one silicon wafer 1 respectively. These silicon wafers 1 are respectively loaded into the receiving holes 15 of the bracket 14 above, and each of the lower surfaces is provided on the lower side whetstone 12 to be in a state of sliding connection freely. Also, the thickness of the bracket 14 is formed to be smaller than the thickness of the silicon pattern. In addition, on the upper surface of these silicon wafers 1, the upper side grindstones 13 are in a state of being in sliding contact with each other. The upper side whetstone 13 has an opening 1 3 B 'in its central part. The lower side whetstone 12 also has the same opening part 1 2B as the above-mentioned opening 1 3 B. The upper and lower side whetstones 13, 12 are outside The diameter and inner diameter of the large scale Gu Zhongjia County (CNS) A4 specification (210X297 mm) ~ -13-A7 B7 printed by the Employee Consumer Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs 5. The description of the invention (11) is approximately equal to A thin round plate made of spherical graphite sickle iron. As described above, the upper side grindstone 13 and the lower side grindstone 12 are interposed to hold the silicon wafer 1 while grinding both surfaces. That is, the silicon wafer 1 is held by a bracket 14 ' having peripheral teeth. The bracket 14 is formed with a receiving hole (round hole) 15 into which the silicon wafer 1 can be inserted. In addition, the outer peripheral teeth of the carrier 14 mesh with the sun gear 12A, and also mesh with the inner peripheral teeth of the ring-shaped inner peripheral gear 17. The ring-shaped inner peripheral gear 17 is arranged so as to surround the lower side whetstone 12 and has a larger outer diameter than the lower side whetstone 12. Furthermore, in this example, there are three carriers 14 holding one silicon wafer 1, and three silicon wafers 1 can be ground on both sides at the same time, but it is not limited to this. In addition, a plurality of radial grooves and a circumferential groove each extending in the radial direction and the circumferential direction are formed on the grinding surface (lower surface) of the upper whetstone 13 and the grinding surface (upper surface) of the lower whetstone 12. The detailed structure of the main part of the above-described double-sided grinding device will be described below. As shown in FIGS. 1 to 5, the symbol 12 is a lower side stone on which the silicon wafer 1 as the object to be ground is mounted. The lower side stone 12 is formed with a circular opening at the center ( Center hole) 12 B of the disc body, mounted and fixed to the above-mentioned base 11. Symbol 2 1 a is a spacer support member placed on the lower drive shaft 5, and the spacer support member 2 1 a is inserted through the sun gear drive shaft 4 described above. In addition, the spacer support member 21a does not rotate with the lower drive shaft 5. Symbol 1 2 C denotes a lower spacer placed on the above-mentioned spacer support member 2 1, and on the lower spacer 1 2 C, the end of each carrier 14 on the side of the sun gear 12 A is carried. In addition, the size of the paper uploaded to the lower spacer 1 2 C is in accordance with the Chinese National Standard (CNS> Α4 specification (21 〇X 297 mm) ----- · Wearing-- {Please read the precautions on the back first Fill in this page)
S 、νβ 14 - A7 B7 經濟部中央榡準局員工消費合作社印製 五、 發明説明 (12 ) 1 I 有 與 其 大 約 相 同 形 狀 之 上 間 隔 件 1 3 A > 由 該 上 間 隔 件 1 1 1 3 A 之 白 重 1 與 下 間 隔 1 2 C 夾 住 上 述 托 架 1 4 之 太 陽 1 I 齒 輪 1 2 A 側 之 端 部 並 予 以 支 撐 之 結 構 0 又 ， 各 間 隔 件 1 I 1 2 C 1 3 A 係 旋 轉 白 如 地 嵌 插 於 太 陽 齒 輪 1 2 A > 由 請 先 閲 1 I 上 述 結 構 藉 由 從 上 側 砥 石 1 3 之 開 Π 部 1 3 B 上 方 所 供 讀 背 Λ 1 1 應 之 下 述 研 削 液 ( 參 照 第 2 圖 及 第 5 ΓΒ1 圖 之 粗 箭 線 ) 之 壓 力 之 注 奋 1 1 各 托 架 1 4 不 會 折 彎 0 上 間 隔 件 1 3 A 之 重 重 係 形 成 不 事 項 1 I 再 1 會 對 各 托 架 1 4 之 下 述 行 星 軌 道 之 運 動 有 影 響 的 大 小 〇 寫 本 裝 上 側 砥 石 1 3 係 如 上 述 地 設 成 可 白 由 上 下 移 動 之 狀 態 頁 1 | 9 以 所 定 載 重 向 下 側 砥 石 推 壓 保 持 於 上 述 托 架 的 矽 晶 圓 1 1 I » 又 從 該 上 側 砥 石 1 3 上 方 向 其 開 □ 部 1 3 B 設 有 以 1 1 1 第 2 圖 箭 號 所 示 供 rzte 應 研 削 液 ( 例 如 純 水 ) 的 噴 嘴 等 之 研 削 1 訂 液 供 應 手 段 ( 未 予 圖 示 ) 〇 1 1 由 上 述 上 砥 石 間 隔 件 構 件 6 上 側 砥 石 1 3 下 側 砥 1 1 石 機 座 1 1 及 間 隔 件 構 件 2 4 之 各 內 周 面 及 下 台 驅 動 1 I 軸 5 之 上 面 間 隔 件 支 持 構 件 2 1 a 及 上 下 之 各 間 隔 πτί 件 I 1 3 A 1 2 C 之 外 周 面 所 圍 繞 之 空 間 係 成 爲 所 定 容 稹 之 1 1 水 盤 ( 空 間 ) W 〇 1 1 以 下 9 將 研 削 液 通 路 作 爲 主 要 點 說 明 上 砥 石 間 隔 件 構 1 1 件 6 及 上 ， 下 側 砥 石 1 3 1 2 之 詳 細 構 造 0 1 | 首 先 ) 如 第 1 ΠΕΠ 圖 所 示 在 上 砥 石 間 隔 件 構 件 6 形 成 有 1 1 向 上 下 方 向 貫 穿 之 複 數 ( 在 团 圖 中 僅 圖 示 兩 個 ) 之 貫 穿 孔 1 I 1 8 成 爲 形 成 向 上 述 上 砥 石 間 隔 件 構 件 1 6 之 周 方 向 具 1 有 規 則 性 ( 在 本 例 爲 等 間 隔 地 ) 之 狀 態 〇 1 1 1 準 標 家 國 國 中 用 適 度 尺 張 紙 本 角 公 7 9 2 經濟部中央標準局員工消費合作社印製 A 7 _________ B7 五、發明説明（13 ) 如第1圖及第6圖所示，在上側砥石1 3之上面內周 側形成有環狀之環狀溝1 9。該環狀溝1 9之形成位置， 係形成與上述上砥石間隔件構件6的貫穿孔18之位置重 複之位置。又’在上側砥石1 3之上面，形成有各該一端 連通於上述環狀溝19且放射狀地延至上側砥石13之外 徑方向之大約中間部爲止之複數條（在本例子爲8條）的 放射溝2 0。在該放射溝2 0之另一端，分別連通有上下 地貫穿上側砥石13的貫穿孔21» 一方面’如第1圖及第7圖所示，在下側砥石12之 下面，形成有從其內壁放射狀地延伸的複數放射溝2 3。 各放射溝2 3係從下側砸石1 2之內周端延伸至徑向之大 約中間部，而在各放射溝2 3之一端，分別連通有上下地 貫穿下側砥石1 2的複數貫穿孔2 2。 在第2圖及第5圖，以粗線箭號所示者，表示研削液 之流動狀態者，亦即，由上側砥石1 3之上方供應於上述 水盤W之研削液，係從上，下側砥石1 3，1 2之間的矽 晶圓1之外周端側供應至其上下面，藉由上，下側砥石 1 3 ，1 2之水平面內之旋轉所產生之離心力，該被供應 之研削液係供應方向上，下側砥石1 3，1 2之外周側。 由此，研削液供應至矽晶圓1之上下面全領域。 一方面，在上砥石間隔件構件6之複數貫穿孔1 8也 供應有研削液，而該被供應之研削液係經上側砥石1 3之 環狀溝19 ，放射溝2 0及貫穿孔2 1供應於矽晶圓1之 上面約中央部又，供應於上述水盤W之研削液，係經由下 本紙張尺度適用中國國家標率（CNS ) A4规格（210X297公釐） (請先閱讀背面之注意事項再填寫本頁) 裝· 訂 16 - 經濟部中央標準局貝工消費合作社印製 A7 B7 五、發明説明（14 ) 側砥石1 2之放射溝2 3及貫穿孔2 2也供應於矽晶圓1 之下面約中央部，由此可確實地控制矽晶圓全領域之溫度 〇 欲使用該兩面研削裝置來研削矽晶圓之表背兩面，則 將切片後之矽晶圓1插入在托架1 4之收容孔1 5，在上 側砥石1 3與下側砥石1 2之間夾住矽晶圓1 ，以各該所 定速度在水平面內旋轉上側砥石1 3及下側砥石1 2。此 時，上側砥石1 3係以所定載重一面推壓矽晶圓1 一面下 降所定量（例如100；am)。又，此時，從上側抵石 1 3之上方經常供應研削液，將矽晶圓1之溫度控制管理 在一定（例如在2 5°C)。該研削盤液係從水盤W經各研 削面之溝（放射溝或圓周溝）而經常供應至矽晶圓1之中 心部。故，也可將矽晶圓1中心部之溫度管理成一定。由 上述說明可知，藉由上述研削液供應手段（噴嘴等）或上 述研削液通路及水盤W，構成溫度控制手段。 詳述如下，首先，將矽晶圖1裝填於各該托架1 4之 收容孔1 5，將此載置於下側砥石1 2上，由上部將上側 砥石13推壓成擋接於各矽晶圓1之上面。之後，如上所 述，一面將研削液供應至矽晶圓1之上下表面，一面將太 陽齒輪1 2 A及環狀內周齒輪1 7分別向第4圚中箭號方 向旋轉時，則各托架1 4係成爲向第4圖中箭號方向自轉 之狀況。由此，矽晶圓1係一面在下側砥石1 2上以水平 內描繪行星軌道，一面這些下表面係以下側砥石1 2之上 面（研削面）被研磨而被研削者。藉將上側砥石1 3向與 本紙張尺度適用中國國家標準（〇叫八4祕（21(^297公釐) --------------ΐτ------^ (請先閱讀背面之注意事項再填寫本頁) -17 - 經濟部中央標準局貝工消費合作社印製 A7 _ __B7 五、發明説明（l5 ) 下側砥石1 2相反方向旋轉，矽晶圓1之上表面係以該上 側砥石1 3之下面（研削面）被研磨而被研削者。 如上述可知，由太陽齒輪1 2A，太陽齒輪驅動軸4 ，環狀內周齒輪1 7及驅動馬達8等，構成相對運動手段 。又，由該相對運動手段或上側砥石1 3及下側砥石1 2 等構成兩面研削手段》 第9 A圖及第9 B圖係分別表示說明以往技術之製造 過程及本發明的過程所用的流程圖。 在以往之矽晶圚之製造，首先，切片矽之單結晶晶錠 (步驟S1)，修圓該被切斷之矽晶圓（步驟S2)。將 如此所得到之複數矽晶片，依厚度參差之大小加以分別（ 分批構成，步驟S3)。實行這種分批構成之理由，係在 於厚度愈整齊，則愈可縮短下述之研磨加工時間。每在對 於該厚度分別之矽晶圓整齊成厚度者之同時施以研磨（步 驟S4)，研磨後洗淨（步驟S5)。該洗淨係用以除去 研磨劑，研磨時從矽晶圖除去球狀石墨鐮截製之上下側砥 石被摩耗所產生之大量的鐵及鐵離子所用的強力之洗淨。 如此，依鹸性界面活性劑實行矽晶圓之洗淨（步驟S 6 ) ，又依部分触刻（Chemical Corner Rounding)除去因上 述修圓所產生之破壞。之後，實行洗淨後施以蝕刻。 在本發明，如第9 B圖所示，實行例如依鋼絲鋸之切 片（步驟S10)及修圓後（步驟S11)，不實行如上 述之分批構成，實行兩面同時研削（步驟S12)。不必 實行分枇構成，乃兩面同時研削係同時地研削矽晶圓之兩 本紙張尺度it财關家縣（CNS > A4規格（210X297公釐) 《裝 訂------^ (請先閱讀背面之注意事項再填寫本頁) -18 - 經濟部中央標準局貝工消費合作社印製 A7 _______B7_ 五、發明説明（16 ) 面，故可在短時間內製作兩面之平行度。 因未使用研削劑，故不必實行如上述之剛研磨後之洗 淨。洗淨後（步驟S1 3)，實行CCR及洗淨，又，以 半拋光之方法或兩面同時化學機構研磨矽晶圓俾除去研削 破壞層。該兩面同時化學機構研磨係代替上述之兩面同時 研削裝置之上側砥石及下側砥石，由分別具有研磨布之上 下一對之定盤來實行。不經過以往之研磨加工及蝕刻過程 ’藉實行背面半拋光或兩面同時研磨。可將矽晶圓加工成 高精度者。 又，並不被限定於未經上述蝕刻過程之製造方法，也 可以將洗淨（步驟1 3 )以後之過程作爲與以往同樣之過 程。 第1 0圖係表示上側砥石1 3之下降速度（上側砥石 之下降量/加工時間）與該時之載重之關係。此時之下側 砥石1 2，上側砥石1 3之旋轉速度係分別作爲例如7 7 r . p. m，51r. p_ m。載重爲小（例如 120 + 30kg f=0)時，對所定量之研削費時，載重爲中間 (例如 165 + 30kgf=A)，大（210 + 30 kg f=CD)時，則研削時間係適當。然而，若施加比大 時之載重更大時，則在該旋轉速度等條件下，在矽晶圓上 產生裂痕β 第1 1圖係表示使用相同該裝置而將載重成爲一定（ 165+30kgf)，變更上側砥石13與下側砥石 1 2之旋轉速度而實行兩面研削之結果。對於下側砥石 本紙張尺度適用中國國家標準（CNS ) A4規格（2丨〇><297公釐） ~ ~ I m - - I - - I ^ - m -- m、-ST (請先閱讀背面之注意事項再填寫本頁) 經濟部中央標準局貝工消費合作社印製 A7 B7 五、發明説明（17 ) 1 2及上側砥石1 3之旋轉速度，〇係下側砥石1 2爲 45 r pm，上側砥石1 3爲28 r pm之情形；#係同 6〇rpm，38rpm，△係同 77rpm，51 rpm，△係同87rpm，57rpm之各情形。由研 削所需之時間及裂痕之觀點，參及△表示良好之結果。 如上所述，依照本實施例之兩面研削，與研磨加工後 之矽晶圓相比較，可得到高平坦度之矽晶圓。如第1 2圖 表示，例如可將TTV成爲〇. 66#m(靜電電容型表 面平坦度測定器=ADE之測定值）。結果，與研磨晶圓 相比較而減少其蝕刻截止量，例如可形成2# m。又將此時 之蝕刻面之凹凸與研磨加工時相比較，也可減小，例如可 形成0· l^m。又，在後續過程之研磨以約2# m之較 少之研磨量即可以，可將S F QD容易地達成約〇 . 1 β m 。 本發明與依一面一面地實行研削之情形相比較時，則 在該矽晶圓表面不會留下轉印於切片面之凹凸。故，成爲 可將研削後之矽晶圓未施以研磨加工而施以蝕刻。又，僅 留下依研磨加工所產生之破壞量之約1/1 0之破壞，蝕 刻截止層會減少，可顯著防止依蝕刻所產生之平坦度之降 低。又，在本實施例，具有可除去藉研削液之研削面之切 削粉的效果。 因本發明係如上所述地所構成，因此具有如下述之效 果。 本發明之製造方法，係與實行研磨加工相比較，可製 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） --------<袈— (請先閲讀背面之注意事項再填寫本頁) 訂 -20 - A7 B7 經濟部中央標準局員工消費合作社印製 303488 五、發明説明（18 ) 作特別是1 G位元以上之高積體裝置時被要求之高平坦度 的矽晶圓，而且減少蝕刻截止層，又可減小蝕刻面之凹凸 。又，在研磨過程之研磨量較少即可以。不需研磨後費時 之洗淨。與一面一面地研削相比較，不需要實行洗淨及研 磨加工。 又，可防止矽晶圖之溫度上昇而均勻地管理，可將矽 晶圓之厚度與殘留破壞在其全領域成爲均勻，可將全面平 坦地形成而減低翹曲。 又，兩面研削後之矽晶圓係破壞層較少，故即使加工 速度緩慢之化學機械研磨，也可除去破壞層，藉施以背面 之半拋光，或在表背兩面施以同時研磨，可經濟性地製作 研削破壞被除去且被兩面研磨之矽晶圓。 本發明之製造裝置係可容易實施上述之製造方法，而 且藉相對運動手段之作用，藉旋轉上側砥石及下側砥石， 且行星運動保持矽晶圓之托架，除了可均勻地研削矽晶圓 之兩面之外，可將研削裝置成爲小型者》 又，藉溫度控制手段，分別從上側砥石及下側砥石之 內周側，以及從上側砥石及下側砥石之研削面，向矽晶圓 之端面側及中央部可供應研削液，該研削液係藉上側砥石 及下側砥石之離心力可供應至矽晶圓之上下面全域。藉此 ，，可確實地控制矽晶圓表背面之全領域的溫度，兩面之 殘留破壞成爲均勻而具有翹曲變小的優點。 又，藉上下之間隔件夾住托架之太陽齒輪側的端部， 可防止起因於研削液之壓力的托架之撓曲。 本紙張尺度適用中國國家標準（CNS )八4規格（210'乂 297公釐） (請先閱讀背面之注意事項再填寫本頁)S, νβ 14-A7 B7 Printed by the Employee Consumer Cooperative of the Central Bureau of Economics of the Ministry of Economy V. Description of the invention (12) 1 I has a spacer 1 3 A > by this upper spacer 1 1 1 3 The white weight 1 of A and the lower interval 1 2 C The structure that supports the end of the sun 1 I gear 1 2 A side of the bracket 1 4 above and supports it 0 In addition, each spacer 1 I 1 2 C 1 3 A series The rotation is inserted into the sun gear as if it is free. 1 2 A > Please read first 1 I. The above structure is read from above the opening Π portion 1 3 B of the upper whetstone 1 3. The back grinding Λ 1 1 should be the following grinding fluid (Refer to the thick arrows of Figure 2 and Figure 5 ΓΒ1) Pressure of the pressure 1 1 Each bracket 1 4 will not bend 0 Upper spacer 1 3 A heavy weight is not a matter of formation 1 I then 1 will The size of the following planetary orbital movements of each carrier 1 4 has an effect. The writing is installed on the side whetstone. 1 3 is designed as described above Cheng Kebai's state of movement from top to bottom. Page 1 | 9 The silicon wafer held by the above-mentioned whetstone at the predetermined load is held on the bracket 1 1 I »From the upper whetstone 1 3 to the upper part of the opening 1 3 B Grinding with nozzles, etc. for the rzte grinding fluid (such as pure water) as indicated by the arrows 1 1 1 2 in figure 2 1 Ordering fluid supply means (not shown) 〇1 1 By the above upper whetstone spacer 6 Upper side whetstone 1 3 Lower side whetstone 1 1 Stone base 1 1 and spacer member 2 4 each inner peripheral surface and lower table drive 1 I shaft 5 upper spacer support member 2 1 a and upper and lower spacers πτί pieces I 1 3 The space surrounded by the outer peripheral surface of A 1 2 C becomes the fixed volume of 1 1 water pan (space) W 〇1 1 or less 9 The grinding fluid passage is used as the main point to explain the upper toestone spacer structure 1 1 6 and above, Detailed structure of the lower side stone 1 3 1 2 1 | First) As shown in the first ΠΕΠ figure, a plurality of penetrating holes 1 I 1 8 are formed in the upper toestone spacer member 6 1 1 in the vertical direction (only two are shown in the group diagram). The upper whetstone spacer member 16 has a regularity in the circumferential direction of 1 6 (in this case, at regular intervals). 〇 1 1 1 Appropriate bidder home country junior high school uses a moderate-sized sheet of paper. The corner of the paper is 7 9 2 Central Standards of the Ministry of Economic Affairs Printed by the Bureau Staff Consumer Cooperative A 7 _________ B7 V. Description of the invention (13) As shown in Figures 1 and 6, a ring-shaped annular groove 19 is formed on the inner peripheral side of the upper side of the upper whetstone 13. The formation position of the annular groove 19 is a position overlapping with the position of the through hole 18 of the upper whetstone spacer 6 described above. Also, on the upper side of the upper whetstones 13 are formed a plurality of ends (there are 8 bars in this example) that each end communicates with the annular groove 19 and extends radially to approximately the middle of the outer diameter direction of the upper whetstone 13 The radiation groove 2 0. At the other end of the radiation groove 20, through holes 21 penetrating through the upper side whetstone 13 up and down are connected to each other »On the one hand, as shown in FIGS. 1 and 7, under the lower side whetstone 12 is formed A plurality of radial grooves 23 extending radially. Each radiation groove 23 extends from the inner peripheral end of the lower side stone 12 to approximately the middle of the radial direction, and at one end of each radiation groove 23, there is a plurality of vertical penetrations through the lower side whetstone 12 Hole 2 2. In Figures 2 and 5, the thick arrows indicate the flow state of the grinding fluid, that is, the grinding fluid supplied to the water tray W from above the upper whetstone 13 is from top to bottom. The silicon wafer 1 between the side whetstones 1 3, 1 2 is supplied to the upper and lower sides of the outer peripheral end side, and the centrifugal force generated by the rotation of the upper and lower whetstones 1 3, 1 2 in the horizontal plane should be supplied In the supply direction of the grinding fluid system, the lower side of the whetstones 13 and 12 are on the outer peripheral side. As a result, the grinding fluid is supplied to all areas of the silicon wafer 1 above and below. On the one hand, a plurality of through holes 18 of the upper whetstone spacer member 6 are also supplied with grinding fluid, and the supplied grinding liquid is passed through the annular groove 19 of the upper whetstone 13, the radial groove 20, and the through hole 21 The grinding fluid supplied to the upper part of the silicon wafer 1 and supplied to the above-mentioned water tray W is applicable to the Chinese national standard rate (CNS) A4 specification (210X297 mm) through the following paper standard (please read the note on the back first Please fill out this page again) Binding · Order 16-Printed by A7 B7, Beigong Consumer Cooperative, Central Bureau of Standards, Ministry of Economic Affairs 5. Description of Invention (14) Radiation ditch 2 3 and penetrating hole 2 2 of sidestone 1 2 are also supplied to silicon crystal The lower part of circle 1 is about the center, so that the temperature of the silicon wafer can be reliably controlled. To use this two-side grinding device to grind the front and back sides of the silicon wafer, insert the sliced silicon wafer 1 in the support. The receiving hole 15 of the rack 14 sandwiches the silicon wafer 1 between the upper side stone 13 and the lower side stone 12 and rotates the upper side stone 13 and the lower side stone 12 in the horizontal plane at each predetermined speed. At this time, the upper side whetstone 13 is pressed down by pushing the silicon wafer 1 with a predetermined load (eg 100; am). Also, at this time, the grinding fluid is often supplied from above the upper lands 13 to control the temperature of the silicon wafer 1 to be constant (for example, at 25 ° C). The grinding disc liquid is often supplied from the water disc W to the center of the silicon wafer 1 through grooves (radiation grooves or circumferential grooves) of the grinding surfaces. Therefore, the temperature of the central portion of the silicon wafer 1 can also be controlled to be constant. As can be seen from the above description, the above-mentioned grinding fluid supply means (nozzle, etc.) or the above-mentioned grinding fluid passage and water tray W constitute the temperature control means. The details are as follows. First, the silicon crystal pattern 1 is loaded into the receiving hole 15 of each of the brackets 14 and this is placed on the lower side whetstone 12 and the upper side whetstone 13 is pushed from the upper part to block each piece Above the silicon wafer 1. After that, as described above, while supplying the grinding fluid to the upper and lower surfaces of the silicon wafer 1, while rotating the sun gear 1 2 A and the ring-shaped inner peripheral gear 17 in the direction of the arrow in the fourth circle, The frame 14 is in a state where it rotates in the direction of the arrow in Figure 4. As a result, the silicon wafer 1 is a planetary orbit drawn horizontally on the lower side whetstone 12 on one side. On the other hand, these lower surfaces are ground on the upper side (grinding surface) of the lower side whetstone 12 to be ground. Apply the Chinese national standard by the 13-way of the upper side whetstone and the paper standard (〇 calls eight four secrets (21 (^ 297mm) -------------- lτ ------ ^ (Please read the precautions on the back before filling out this page) -17-A7 _ __B7 printed by the Beigong Consumer Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs 5. Invention description (l5) The lower side of the whetstone 1 rotates in the opposite direction, silicon wafer 1 The upper surface is polished by the lower surface (grinding surface) of the upper side grindstone 1 3. As can be seen from the above, the sun gear 12A, the sun gear drive shaft 4, the ring-shaped inner peripheral gear 17 and the drive motor 8, etc., constitute a relative motion means. In addition, the relative motion means or the upper side stone 13 and the lower side stone 1 2 constitute a two-sided grinding means. Figures 9A and 9B respectively show the manufacturing process to explain the prior art And the flow chart used in the process of the present invention. In the manufacture of conventional silicon wafers, first, a single crystal ingot of silicon is sliced (step S1), and the cut silicon wafer is rounded (step S2). The obtained multiple silicon wafers are divided according to the size of the thickness difference (batch formation, step S3). The reason for the batch structure is that the more uniform the thickness, the shorter the grinding time as described below. Each time the silicon wafers of the respective thickness are aligned to the thickness, the grinding is performed (step S4), and the washing is performed after grinding Clean (Step S5). This cleaning is used to remove the abrasive. When grinding, the spherical graphite sickle is removed from the silicon crystal pattern to cut the upper and lower side stone. The large amount of iron and iron ions generated by friction are used for the powerful cleaning. In this way, the silicon wafer is cleaned according to the active surfactant (step S 6), and the damage caused by the above rounding is removed according to the chemical corner rounding. After that, the cleaning is applied after cleaning Etching. In the present invention, as shown in FIG. 9B, for example, after performing slicing (step S10) and rounding (step S11) according to a wire saw, the batch structure as described above is not implemented, and simultaneous grinding on both sides is performed (step S12) ). It is not necessary to implement a separate structure, but the simultaneous grinding of both sides is to simultaneously grind two paper scales of silicon wafers. It is in Guanguan County (CNS > A4 specification (210X297mm) "Binding -------- ^ ( Please read the notes on the back first (Write this page) -18-A7 _______B7_ printed by the Beigong Consumer Cooperative of the Central Bureau of Standards of the Ministry of Economy V. Invention description (16), so the parallelism of the two sides can be produced in a short time. Because no grinding agent is used, it is not necessary to implement As mentioned above, the washing immediately after grinding. After washing (step S13), CCR and washing are performed, and the silicon wafer is ground by a semi-polishing method or a simultaneous chemical mechanism on both sides to remove the grinding damage layer. The two sides are simultaneously The chemical mechanism polishing is to replace the above two sides to grind the upper side stone and the lower side stone at the same time. No previous grinding process and etching process ’By performing semi-polishing on the back or grinding on both sides simultaneously. Silicon wafers can be processed to high precision. In addition, it is not limited to the manufacturing method without the above-mentioned etching process, and the process after washing (step 1 3) may be the same as the conventional process. Figure 10 shows the relationship between the lowering speed of the upper side stone 13 (the lowering amount of the upper side stone / processing time) and the load at that time. At this time, the rotation speeds of the lower side grindstone 12 and the upper side grindstone 1 3 are respectively, for example, 7 7 r. P. M, 51 r. P_ m. When the load is small (such as 120 + 30kg f = 0), the amount of time required for the grinding is the middle load (such as 165 + 30kgf = A), and when the load is large (210 + 30 kg f = CD), the grinding time is appropriate. . However, if the load is greater than the larger load, cracks will be generated on the silicon wafer under the conditions such as the rotation speed. Figure 11 shows that the same device is used to make the load constant (165 + 30kgf) , Change the rotation speed of the upper side grindstone 13 and the lower side grindstone 12 to carry out the grinding on both sides. For the size of the lower side stone paper, the Chinese National Standard (CNS) A4 specification (2 丨 〇 < 297mm) ~ ~ I m--I--I ^-m-m, -ST (please first Read the precautions on the back and fill in this page) A7 B7 printed by Beigong Consumer Cooperative of Central Bureau of Standards of the Ministry of Economy V. Description of invention (17) 1 2 and the rotation speed of upper side stone 1 3, the lower side stone 1 2 is 45 r pm, upper side whetstone 13 is 28 r pm; # is the same as 60 rpm, 38 rpm, △ is the same as 77 rpm, 51 rpm, △ is the same as 87 rpm, 57 rpm. From the viewpoint of the time required for the grinding and cracks, the reference to △ indicates a good result. As described above, according to the two-side grinding of this embodiment, a silicon wafer with high flatness can be obtained as compared with the silicon wafer after grinding. As shown in Fig. 12, for example, TTV can be 0.66m (capacitance type surface flatness tester = measured value of ADE). As a result, the amount of etch cut-off is reduced compared to the polished wafer, for example, 2 # m can be formed. In addition, the unevenness of the etched surface at this time can be reduced as compared with the grinding process, for example, 0 · l ^ m can be formed. In addition, the grinding in the subsequent process may be as small as about 2 # m, and the S F QD can be easily reached about 0.1 β m. Compared with the case where grinding is carried out side by side, the invention does not leave unevenness transferred to the slicing surface on the surface of the silicon wafer. Therefore, it becomes possible to etch the polished silicon wafer without polishing. In addition, leaving only about 1/10 of the damage caused by the grinding process, the etch stop layer is reduced, which can significantly prevent the flatness caused by the etching from being lowered. In addition, in this embodiment, there is an effect that the cutting powder of the grinding surface by grinding liquid can be removed. Since the present invention is constructed as described above, it has the following effects. The manufacturing method of the present invention is compared with the grinding process, and the size of the paper can be applied to the Chinese National Standard (CNS) A4 specification (210X297 mm) -------- < 袈 — (Please read the back side first Matters needing attention and then fill out this page) Order -20-A7 B7 Printed 303488 by the Staff Consumer Cooperative of the Central Bureau of Standards of the Ministry of Economy V. Description of the invention (18) The height flatness required when making a high-integral device above 1 Gbit in particular Degree of silicon wafer, and reduce the etching cut-off layer, and can reduce the unevenness of the etching surface. In addition, the grinding amount in the grinding process may be small. There is no need for time-consuming washing after grinding. Compared with grinding side by side, cleaning and grinding are not required. In addition, the temperature of the silicon wafer can be prevented from being uniformly managed, and the thickness and residual damage of the silicon wafer can be uniformed in its entire field, and the entire surface can be formed smoothly to reduce warpage. In addition, the silicon wafer after the grinding on both sides has less damage layers, so even if the mechanical mechanical grinding is slow, the damage layer can be removed, by applying semi-polishing on the back side, or simultaneous grinding on both sides of the front and back. Economically fabricate silicon wafers with grinding damage removed and ground on both sides. The manufacturing apparatus of the present invention can easily implement the above-mentioned manufacturing method, and by the action of relative motion means, by rotating the upper side stone and the lower side stone, and the planetary movement holds the carrier of the silicon wafer, except that the silicon wafer can be evenly ground In addition to the two sides, the grinding device can be made into a small one ". Also, by means of temperature control, from the inner side of the upper side stone and the lower side stone, and from the grinding surface of the upper side stone and the lower side stone, to the silicon wafer Grinding fluid can be supplied at the end face side and the central part. The grinding fluid can be supplied to the entire area above and below the silicon wafer by the centrifugal force of the upper side stone and the lower side stone. With this, the temperature of the entire area on the front and back of the silicon wafer can be reliably controlled, and the residual damage on both sides becomes uniform and has the advantage of less warpage. In addition, the upper and lower spacers sandwich the end of the bracket on the sun gear side to prevent the bracket from deflecting due to the pressure of the grinding fluid. The size of this paper is in accordance with Chinese National Standard (CNS) 84 specifications (210 'x 297 mm) (please read the precautions on the back before filling this page)
-21 - A7 B7 經濟部中央標準局員工消費合作社印製 五、 發明説明 (19 ) 1 1 C 圚 式 之 簡 單 說 明 ] 1 1 | 第 1 tsi 圖 係 表 示 本 發 明 之 一 實 施 例 的 兩 面 研 削 裝 置 之 上 1 I 側 砥 石 位 於 上 昇 位 置 之 狀 態 的 整 體 Ufc 稱 成 ΓΗΙ 圖 〇 請 先 閲 I 第 2 圖 係 表 示 本 發 明 之 一 實 施 例 的 兩 面 研 削 裝 置 之 上 漬 背 I 面 I 側 砥 石 位於 下 降 位 置 之 狀 態 的 整 歷稱 成 圖 之 注 音 1 1 第 3 圖 係 表 示 本 發 明 之 —* 實 施 例 的 兩 面 研 削 裝 置 之 主 事 項 1 I 再 1 要 部 分 的 斜 視 圖 寫 本 % 第 4 圖 係 表 示 本 發 明 之 _. 實 施 例 的 兩 面 研 削 裝 置 之 主 頁 1 | 要 部 分 的 平 面 圖 〇 1 I 第 5 ΓΒ1 圖 係 表 示 本 發 明 之 一 實 施 例 的 兩 面 研 削 裝 置 之 主 1 1 I 要 部 分 的 縱 剖 面 圖 1 訂 第 6 圖 係 表 示 上 側 砥 石 的 平 面 圖 〇 1 1 第 7 圖 係 表 示 下 側 砥 石 的 平 面 圖 〇 1 1 第 8 A 圖 至 第 8 I rwt 圖 係 表 示 說 明 提 高 矽 晶 圓 之 平 坦 度 1 | 所 用 的 圖 式 0 I 第 9 A rat 圖 至 第 9 B 圖 係 分 別 表 示 說 明 以 往 技 術 及 本 發 1 1 1 明 之 製 造 過 程 所 用 的 流 程 圖 〇 1 1 第 1 0 圖 係 表 示 本 發 明 之 一 實 施 例 的 兩 面 研 削 之 結 果 1 1 的 圖 式 〇 1 1 第 1 1 ren 閫 係 表 示 本發 明 之 一 實 施 例 的 兩 面 研 削 之 結 果 1 | 的 圖 式 〇 1 j 第 1 2 圖 係 表 示 本 發 明 之 一 實 施 例 的 兩 面 研 削 之 結 果 1 1 之 表 面 狀 態 的 模 式 圖 〇 1 1 1 本紙張尺度適用中國國家標準（CNS ) A4規格（210X 297公釐） -22 - B7 五、發明説明（20 ) 第1 3圖係與表示以往的矽晶圓之表面狀態之第5圖 同樣的模式圖。 第1 4A圖，第1 4B圖及1 4 C圖係表示真空吸附 矽晶圓而研削其一面時的晶圓之表面狀態的模式圖。 第1 5圖係表示成爲推拔狀之矽晶圓的概略圖。 人 象 訂 ( (請先閱讀背面之注意事項再填寫本頁) 經濟部中央標準局員工消費合作社印製 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐）-21-A7 B7 Printed by the Employee Consumer Cooperative of the Central Bureau of Standards of the Ministry of Economy V. Description of the invention (19) 1 1 C Simple description of the C formula] 1 1 | 1st tsi The figure shows a double-sided grinding device according to an embodiment of the invention The top 1 I side sidestone is in the ascending position. The overall Ufc is called ΓΗΙ. Figure 1 please read I. Figure 2 shows the upper side of the two-side grinding device according to an embodiment of the present invention. The side I side stone is in the lowered position The entire history of the state is called Zhuyin 1 1. FIG. 3 shows the invention-* the main items of the double-sided grinding device of the embodiment 1 I and 1 the oblique view of the main part of the writing% FIG. 4 shows the invention _. The homepage of the double-sided grinding device of the embodiment 1 | Plan view of essential parts 〇1 I 5th ΓΒ1 It shows the main part of the double-sided grinding device according to one embodiment of the present invention. 1 1 I Longitudinal section of the main part. FIG. 1 is the sixth. FIG. 6 is a plan view showing the upper side of the stone 〇1 1 FIG. 7 is a plan view showing the lower side of the stone 〇1 1 Figures 8 A to 8 I rwt are diagrams showing the improvement of the flatness of the silicon wafer 1 | The pattern used 0 I 9th A rat to 9 B diagrams are respectively explaining the prior art and the present invention 1 1 1 Flowchart used in the manufacturing process of the Ming Dynasty 〇1 1 Figure 1 0 shows the results of the two-sided grinding of one embodiment of the present invention 1 1 diagram 〇1 1 1 1 ren 阃 shows the two sides of an embodiment of the present invention The result of grinding 1 | The drawing 〇1 j Figure 1 2 shows the result of grinding on both sides of an embodiment of the invention 1 1 Model diagram 〇1 1 1 This paper scale is applicable to the Chinese National Standard (CNS) A4 specification (210X 297 mm) -22-B7 5. Description of the invention (20) Figure 1 3 shows the surface of the conventional silicon wafer The same schematic diagram of Figure 5 of the state. Fig. 14A, Fig. 14B and Fig. 14C are schematic diagrams showing the surface state of the wafer when vacuum-absorbing the silicon wafer and grinding one side. Fig. 15 is a schematic diagram showing a silicon wafer in a pushed shape. Portrait ((Please read the precautions on the back before filling in this page) Printed by the Employee Consumer Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs This paper standard is applicable to the Chinese National Standard (CNS) A4 (210X297 mm)