JP2011161560A - End face machining method and end face machining device of circular plate material - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide an end face machining method of a circular plate material capable of carrying out the promotion of accuracy of outer dimensions of the circular plate material and of reducing a machining unit price. <P>SOLUTION: In the end face machining method of the circular plate, a cylindrical member is formed by laminating a plurality of the plate materials in a thickness direction, the cylindrical member is interposed between a pair of surface plates to allow the curved surface of the cylindrical member to abut on the respective main surfaces of the surface plates constituting polishing surfaces, rotation in a circumferential direction is imparted to the cylindrical member, rotation in a direction intersecting the center axis of the cylindrical member is imparted thereto, and the polishing of the outer circumference of the cylindrical member is carried out by supplying a polishing agent between the pair of the surface plates, so that the circular machining of the plate material is performed. <P>COPYRIGHT: (C)2011,JPO&INPIT

Description

  The present invention relates to a method for processing an end surface of a circular plate material, and an end surface processing apparatus for carrying out this processing method. In particular, the present invention relates to a circular plate material suitable for adjusting the diameter dimensional accuracy of a circular plate material to be mass-produced. The present invention relates to an end face processing method and a processing apparatus.

  Wafers (or chips) constituting the crystal vibrating piece are subjected to lapping processing (rough polishing) for thickness adjustment and polishing processing (finish polishing) after lapping processing. Then, the wafer (or chip) that has been subjected to the polishing process is subjected to processing such as formation of a metal film or etching to form a crystal vibrating piece.

  The wafer (or chip) subjected to the end face processing as described above is subjected to lapping processing or polishing processing on the main surface, and proceeds to the outer diameter shape forming step and the electrode film forming step.

  Here, in the etching process for forming the outer diameter shape and the electrode film, the positioning accuracy of the wafer (or chip) with respect to the frame on which the wafer (or chip) is arranged becomes a problem. This is because if the positioning accuracy is poor, deviation occurs in the formation position of a mask for performing etching, resulting in variations in characteristics of the manufactured resonator element. In addition, the dimensions of the wafer (or chip) should be such that the required main vibration can be easily excited, and dimensions that can suppress the superposition of unnecessary waves (for example, the antinodes of unnecessary waves are located on the end face of the crystal vibrating piece). Therefore, if this is shifted, unnecessary waves are easily superimposed and the vibration characteristics are deteriorated.

  In order to improve the positioning accuracy of wafers (or chips), it is considered to eliminate the dimensional variation between wafers (or chips) processed in batches and to adjust the outer diameter of each piece. It is done. For this reason, attention is paid to a polishing process capable of driving the outer diameter of the wafer (or chip).

  As a technique for polishing the end face (side face) of a wafer, for example, techniques disclosed in Patent Documents 1 to 3 are known. Here, in each of the technologies disclosed in Patent Documents 1 and 2, the cut wafers are laminated and bonded in a block shape with a temporary adhesive such as wax. Then, the polishing of the wafer end face is realized by bringing a brush polishing machine having a rotation axis along the longitudinal direction of the wafer block into contact with the side surface of the laminated wafer block and attaching an abrasive. Yes. In addition, the technique disclosed in Patent Document 3 is characterized in that when a wafer is laminated and bonded, a laminated adhesive is formed by moisture without using a temporary adhesive such as wax. Even in the case of wafers laminated in a block shape in this way, as in the techniques disclosed in Patent Document 1 and Patent Document 2, end face processing is possible with a brush polishing machine, and the wafer block is divided. It is said that it is no longer necessary to perform processing such as heating.

JP-A-6-310479 JP 2006-231486 A JP 2009-178785 A

  Certainly, according to the method as disclosed in the above patent document, the wafer end face can be polished. However, any of the polishing techniques disclosed in the above patent documents is brush polishing. For this reason, when the polishing surface (brush tip) contacts the wafer end surface (or chip end surface), the polishing surface is bent. Therefore, the mirror finish of the end face can be performed, but it is considered unsuitable for driving the outer diameter.

  On the other hand, it is thought that the accuracy of wafer dimensions can be obtained by changing the polishing surface to a diamond grindstone instead of a brush like a cylindrical grinder, but such an alternative was performed. However, since the number of wafers that can be polished by one processing cannot be increased, there remains a problem that the processing unit price is likely to rise.

  Therefore, the present invention provides a method for processing an end face of a circular wafer (circular plate material) that can accurately measure the outer diameter of the circular wafer (circular plate material) and can reduce the processing unit cost. It aims at providing the processing apparatus for enforcing a method.

SUMMARY An advantage of some aspects of the invention is to solve at least a part of the problems described above, and the invention can be implemented as the following forms or application examples.
[Application Example 1] A cylindrical member is formed by laminating a plurality of circular plate members in the thickness direction, and sandwiched so that the curved surface of the cylindrical member abuts each main surface of a pair of surface plates constituting the polishing surface. The cylindrical member is rotated in the circumferential direction of the curved surface, and the cylindrical member is moved freely while the central axis of the cylindrical member is along the main surface, and polished between the pair of surface plates. An end face processing method for a circular plate material, wherein a circular processing of the plurality of circular plate materials is performed by supplying an agent and polishing the outer periphery of the cylindrical member.

  By having such a feature, the accuracy of the outer diameter of the circular plate can be determined. Further, since the number of batch processes can be increased, the processing unit price can be reduced.

[Application Example 2] The end face processing method for the circular plate material according to Application Example 1, wherein the cylindrical member is sandwiched by a polishing apparatus having an upper surface plate and a lower surface plate, and rotated to the cylindrical member. The application is performed by placing the cylindrical member in a holding hole provided in a carrier which is sandwiched between the upper surface plate and the lower surface plate in the polishing apparatus and is provided with rotation and revolution. End face processing method of circular plate material.
By giving such a feature, the cylindrical member can be polished at a predetermined rate of rotation and revolution.

  [Application Example 3] The end face processing method for a circular plate member according to Application Example 2, wherein the cylindrical member is formed in the holding hole which has a rectangular opening shape and is radially arranged with the rotation center axis of the carrier as a base point. A method for processing an end face of a circular plate material, characterized by comprising:

  By having such a feature, a plurality of cylindrical members can be evenly arranged with respect to one carrier. Therefore, processing efficiency can be improved and a processing unit price can be reduced.

  Application Example 4 In the end face processing method for a circular plate member according to Application Example 3, the cylindrical member is disposed in the holding hole in which the long side of the rectangle is disposed along the radial direction of the carrier. A method for processing an end face of a circular plate characterized by the following.

  With such a feature, a plurality of cylindrical members can be evenly arranged with respect to one carrier, and a plurality of directions can be evenly arranged with respect to the cylindrical members arranged in any place. Polishing from is performed.

  Application Example 5 In the end face processing method for a circular plate material according to Application Example 3, the cylindrical member is disposed in the holding hole in which the long side of the rectangle is disposed in a direction orthogonal to the radial direction of the carrier. A method for processing an end face of a circular plate material.

  With such a feature, the dead space of the carrier can be reduced. Therefore, it becomes possible to arrange more cylindrical members with respect to one carrier.

  [Application Example 6] The end face processing method for a circular plate material according to any one of Application Examples 2 to 5, wherein the holding hole has an outer diameter when the cylindrical member is viewed in plan. A method for processing an end face of a circular plate characterized by being larger than the above.

  With such a feature, the cylindrical member can freely rotate within the restriction frame called the holding hole. This makes it possible to automatically equalize the polished surface, that is, to automatically adjust the polished portion and the poorly polished portion to automatically make the polished surface uniform.

  Application Example 7 A processing apparatus having a pair of surface plates composed of a lower surface plate and an upper surface plate, and a carrier disposed between the pair of surface plates and imparted with revolution and rotation, the carrier having A processing apparatus comprising a holding hole for holding a processing object while being brought into rolling contact with the polishing surface of the pair of surface plates.

  By having such a feature, it is possible to carry out the above-described method for processing the end face of a circular plate material, and to improve the accuracy of the outer diameter of the circular plate material and reduce the processing unit cost.

  Application Example 8 The processing apparatus according to Application Example 7, wherein the holding hole has a rectangular opening shape and is arranged radially with the rotation center axis of the carrier as a base point.

  By having such a feature, a large number of cylindrical members can be efficiently arranged on a single carrier. Therefore, processing efficiency can be improved and a processing unit price can be reduced.

It is a figure which shows the arrangement | positioning form of the cylindrical member which concerns on 1st Embodiment, and the structure of a carrier. It is a figure which shows the arrangement | positioning form of the carrier with respect to a lower surface plate, and the mode of a rotation and revolution. It is a figure for demonstrating the grinding | polishing pressing force which acts on the cylindrical member arrange | positioned at the holding hole of a carrier, and a motion of a cylindrical member. It is a figure which shows schematic structure of a grinding | polishing apparatus. It is a graph which shows the diameter variation of the cylindrical member at the time of performing rough grinding | polishing by setting the count of the diamond abrasive grain of an abrasive | polishing agent to 170. FIG. It is a graph which shows the diameter variation of the cylindrical member at the time of finishing grinding | polishing by setting the count of the diamond abrasive grain of an abrasive | polishing agent to 600. FIG. It is a graph which shows the diameter variation of the cylindrical member at the time of performing the process which concerns on embodiment after performing rough grinding | polishing by setting the count of the diamond abrasive grain of an abrasive | polishing agent as 170. It is a graph which shows the diameter variation of the cylindrical member at the time of performing the process which concerns on embodiment after finishing polishing by setting the count of the diamond abrasive grain of an abrasive | polishing agent as 600. FIG. It is a figure for demonstrating the mode from a quartz block to cylindrical member formation. It is a figure which shows the arrangement | positioning form of the cylindrical member which concerns on 2nd Embodiment, and the structure of a carrier. It is a graph which shows the difference in the appearance defect occurrence rate at the time of main surface grinding | polishing by the case where an end surface grinding | polishing process is not performed and the case where an end surface grinding | polishing process is performed.

DESCRIPTION OF EMBODIMENTS Hereinafter, embodiments of a method for processing an end face of a circular plate material and a processing apparatus according to the present invention will be described in detail with reference to the drawings.
First, with reference to FIG. 4, the processing apparatus for implementing the end surface processing method (henceforth only an end surface processing method) of the circular board material which concerns on this embodiment is demonstrated.
The polishing apparatus 50 shown in FIG. 4 includes a sun gear 52, a lower surface plate 54, an internal gear 56, an upper surface plate 58, and a slurry supply device 80. The sun gear 52 is a gear that is integrally formed with the drive shaft 60 at the upper end of the drive shaft 60 and is rotationally driven.

The lower surface plate 54 is an annular surface plate arranged on the outer diameter side of the sun gear 52, and the arrangement center thereof is concentric with the sun gear 52. The lower surface plate 54 is made of, for example, a cast iron plate, and has an upper surface as a polishing surface 55. When polishing is performed, a polishing pad is disposed on the surface.
The lower surface plate 54 is held by a lower surface plate receiving portion 62, and the lower surface plate receiving portion 62 is configured to be rotationally driven by a drive shaft 64.

  The internal gear 56 is a gear arranged on the outer diameter side of the lower surface plate 54 arranged on the outer diameter side of the sun gear 52, and includes a gear inside the ring. The internal gear 56 is configured to be interlocked with the drive shaft 66.

  The upper surface plate 58 is a surface plate suspended above the lower surface plate 54 so as to be movable up and down. The upper surface plate 58 is made of, for example, a cast iron plate, and its lower surface is a polishing surface 59. When polishing is performed, a polishing pad is arranged on the surface. Further, the lifting operation of the upper surface plate 58 is realized by the suspension device 68. The upper platen 58 is provided with a slurry supply hole 84 for supplying slurry, and one opening of the slurry supply hole 84 is disposed on the polishing surface 59. The other opening of the slurry supply hole 84 is disposed at the upper part of the upper surface plate 58, and a slurry supply pipe 82 constituting the slurry supply device 80 is connected thereto. An engaging means that can engage with the drive shaft 70 is provided at the center of the upper surface plate 58. When the upper surface plate 58 is set to the polishing position (lowered state), the drive surface 70 is interposed. Will be rotated.

  The drive shafts 60, 64, 66, and 70 that rotate the sun gear 52, the lower surface plate receiving portion 62, the internal gear 56, and the upper surface plate 58 described above can be independently rotated. It is good to have a simple configuration. In addition, the rotation direction and the rotation speed of each of the drive shafts 60, 64, 66, and 70 are appropriately selected depending on the object to be polished, the polishing stage, and the like. The polishing apparatus 50 may be of a type that stops the upper surface plate 58 when the lower surface plate 54 is rotationally driven, or may be a type that is rotationally driven.

  In the polishing apparatus 50 having such a configuration, the cylindrical member 14 to be polished in the present embodiment is disposed between the lower surface plate 54 and the upper surface plate 58 and meshes with the sun gear 52 and the internal gear 56. It arrange | positions in the holding hole 12 provided in the carrier 10 to rotate, and is grind | polished. Here, the carrier 10 meshing with the sun gear 52 and the internal gear 56 revolves while rotating at a rotation speed and a direction determined by the rotation direction and the rotation speed of the sun gear 52 and the internal gear 56.

  Next, a first embodiment according to an end face processing method by the polishing apparatus having the above-described configuration will be described. In the end face processing method according to the present embodiment, a cylindrical member 14 to be processed is configured by stacking a plurality of wafers or chips (hereinafter simply referred to as circular wafers) having a circular plane. FIG. 9 is an explanatory diagram of a processing method from the crystal block to the formation of the cylindrical member processed in the present embodiment.

  First, a block-shaped quartz crystal (quartz block 14d) having a rectangular cross section is cut out from the quartz crystal. At this time, the cutting is performed so that the cut surface has a surface orthogonal to the cut angle for constituting the quartz crystal vibrating piece to be formed (see FIG. 9A). Next, the crystal block 14d is cut into a plate shape along a predetermined cut surface to form a large wafer 14c (see FIG. 9B). Next, the formed large wafers 14c are aligned in the crystal axis direction and laminated in the thickness direction with a temporary adhesive such as wax to form a block (wafer bonding block 14b) (see FIG. 9C). ). Next, using a cutting machine such as a diamond outer peripheral blade, the individual block 14a is formed by dividing and cutting into a size that satisfies a predetermined dimension determined to form a circular wafer (see FIG. 9D). . The individual block 14a obtained by the division is subjected to cylindrical grinding with a grinding machine such as a diamond cylindrical grinding machine. By configuring the cylindrical member 14 in this manner, it is possible to batch-process the end surface (curved surface) of a small and thin circular wafer (see FIG. 9E).

  The cylindrical member 14 made of a circular wafer thus obtained is disposed in the holding hole 12 of the carrier 10 in the above-described polishing apparatus 50 and processed. Here, as shown in FIG. 1A, the carrier 10 in the present embodiment has a substantially circular shape having a gear on the outer edge. The holding holes 12 for arranging the cylindrical members 14 are arranged radially from the center point (rotation center axis) of the carrier 10 as a base point. The opening shape of the holding hole 12 is a rectangular shape substantially similar to the planar view shape of the cylindrical member 14.

  Further, the carrier 10 is to be processed as shown in FIG. 1 (B), which is taken along the line AA ′ in FIG. 1 (A), and in FIG. 1 (C), which is taken along the line BB ′ in FIG. The thickness T is made thinner than the diameter d of the cylindrical member 14. This is because the cylindrical member 14 to be processed can be brought into rolling contact with the polishing surfaces 55 and 59 of the lower surface plate 54 and the upper surface plate 58 by such a configuration. Moreover, the dimension of the holding hole 12 is made larger than the dimension when the cylindrical member 14 is viewed in plan, thereby enabling free rotation of the cylindrical member 14 disposed in the holding hole 12 within the regulation frame.

  The specific dimension ratio of the holding hole 12 is as follows. The diameter of the cylindrical member 14 is d, the length of the cylindrical member 14 is l, the width of the holding hole 12 is W, and the length of the holding hole 12 is L. become that way. First, the width W of the holding hole 12 may be approximately 16% to 50% larger than the diameter d of the cylindrical member 14. Further, the length L of the holding hole 12 may be approximately 20% larger than the length l of the cylindrical member 14. The thickness T of the carrier 10 is preferably about 57% to 75% of the diameter d of the cylindrical member 14. This is because the cylindrical member 14 disposed in the holding hole 12 can freely move (self-rotation and horizontal movement) in the holding hole 12 as long as it does not exceed the inside of the restriction frame.

  As a constituent material of the carrier 10, it is desirable to use resin such as vinyl chloride. By making the material softer than the crystal to be processed, even when the cylindrical member 14 comes into contact with the edge of the holding hole 12, it is possible to suppress the breakage and damage of the contact portion. is there. Moreover, since it is necessary to make it the member which does not cause the fall of the retention strength of the cylindrical member 14 by bending in thickness about 2 mm-4 mm, resin, such as a vinyl chloride, is appropriate. This is because if the carrier 10 is bent due to contact of the cylindrical member 14 or the like, the cylindrical member 14 may roll out of the holding hole 12.

  Further, the carrier 10 used in the present embodiment has the long side (longitudinal direction central axis) of the holding hole 12 forming a rectangular opening disposed along the radial direction of the main surface of the carrier 10 that is substantially circular. Yes. By adopting such an arrangement form, when arranging a plurality of holding holes 12 for one carrier 10, it is possible to arrange a large number of holding holes 12 equally. Thereby, the curved surface processing of the cylindrical member 14, that is, the processing efficiency of the circular wafer end surface can be improved, and the processing cost per sheet can be reduced.

  A plurality of carriers 10 configured as described above are arranged with respect to the polishing apparatus 50 as shown in FIG. In the polishing process, by driving the sun gear 52 and the internal gear 56, rotation is given to each carrier 10 as shown by an arrow a in FIG. 2, and revolution is also given as shown by an arrow b. Will be. Note that the rotational angular velocities of the sun gear 52 and the internal gear 56 are arbitrarily varied. This is because rotation is imparted to the carrier 10.

  The cylindrical member 14 disposed in the holding hole 12 of the carrier 10 that operates as described above has the polishing agent (slurry) and the lower surface plate supplied from the slurry supply device, and the upper platen at each position that changes from moment to moment. Due to the friction with the surface plate, the following polishing action is received. In addition, as an abrasive | polishing agent suitable for grinding | polishing, the thing which has cerium oxide as a main component (for example, Celox (trade name)), the thing which has silicon carbide as a main component (for example, GC # 2000 (trade name)), etc. are mentioned. be able to.

  First, the cylindrical member 14 disposed in the holding hole 12 existing at positions A and E in FIG. 2 has a longitudinal direction, that is, a circular wafer due to the influence of revolution and the rotational movement of the upper surface plate 58 and the lower surface plate 54. The pressing force from the polishing surfaces 55 and 59 is received in a direction orthogonal to the stacking direction. For this reason, the cylindrical member 14 is rotated in the circumferential direction thereof (see FIG. 3A). Here, in order to impart rotation to the cylindrical member 14 in the circumferential direction, the rotation speeds of the lower surface plate 54 and the upper surface plate 58 of the polishing apparatus 50 are preferably made different. This is because rotation is applied in either direction due to the difference in the pressing force (frictional force) due to the speed difference.

  Next, the cylindrical member 14 disposed in the holding hole 12 existing at the positions C and G in FIG. 2 receives a pressing force from the polishing surfaces 55 and 59 in the direction along the longitudinal direction. For this reason, the part which is contacting the grinding | polishing surfaces 55 and 59 in the cylindrical member 14 will be grind | polished efficiently (refer FIG. 3 (B)).

  Further, the cylindrical member 14 disposed in the holding hole 12 existing at positions B, D, F, and H in FIG. 2 receives the pressing force from the polishing surfaces 55 and 59 obliquely with respect to the longitudinal direction. It becomes. For this reason, the portions in contact with the polishing surfaces 55 and 59 are subjected to polishing from a different direction from the case where they are arranged in the holding holes 12 existing at positions C and G in FIG. 2 (FIG. 3). (See (C)).

  As described above, the cylindrical member 14 is rotated in the circumferential direction, and is also polished in a curved surface while being rotated in a direction intersecting the stacking direction of the circular wafer (the central axis of the cylindrical member 14). Processing will be performed. In other words, the end face of the cylindrical member 14 is polished from a random direction with rotation and revolution. Since both the lower surface plate 54 and the upper surface plate 58 have the polished surfaces 55 and 59 as flat surfaces, the diameter dimension of the cylindrical member 14 in the wafer stacking direction can be made uniform. If the temporary adhesive is removed after these processes, a plurality of circular plate materials that have been processed with high accuracy can be obtained.

  FIG. 5 is a graph showing the variation in diameter of the cylindrical member 14 in the wafer stacking direction when rough polishing is performed with the diamond abrasive grain count of the abrasive as # 170. In the following graphs including this figure, A, B, and C in the plots indicate the dimensions of the end portion (A portion, C portion) and the central portion (B portion) of the cylindrical member 14 ( (See FIG. 1B). From FIG. 5, it can be read that the dimensional variation of part C is large (about 80 μm), and the variation of about 50 μm or more occurs in all the parts A to C.

  Next, FIG. 6 is a graph showing the variation in diameter of the cylindrical member 14 in the wafer stacking direction when finish polishing is performed with the diamond abrasive grain count of the abrasive as # 600. It can be read that by performing the final polishing, it is possible to eliminate the protruding dimensional variation as in part C in FIG. 5, but the overall dimensional variation remains about 50 μm. Can read that.

  In contrast to these current situations, when polishing was performed while imparting rotation and revolution to the cylindrical member 14 as in this embodiment, the results shown in FIGS. 7 and 8 could be obtained. .

  FIG. 7 is a graph showing the variation in the diameter of the cylindrical member 14 in the wafer stacking direction when the above-described rolling polishing is performed after rough polishing with # 170 as the diamond abrasive grain count of the abrasive. is there. According to FIG. 7, it can be read that the variation in diameter is within about 20 μm in all of the parts A to C. As a result, it is possible to provide a resonator element having excellent vibration characteristics by suppressing mask displacement during formation of the resonator element and occurrence of superimposition of unnecessary vibration.

  FIG. 8 shows the variation in the diameter of the cylindrical member 14 in the wafer stacking direction when the above polishing is performed after finishing polishing with # 600 as the diamond abrasive grain count of the abrasive. It is a graph. By adopting such a polishing configuration, it can be read that the dimensional variation of the diameters in the parts A to C can be within a range of about 15 μm. Therefore, it is possible to suppress the occurrence of mask misalignment and superposition of unnecessary vibration when forming a vibrating piece, or more than when rolling and polishing after rough polishing, and improve the vibration characteristics of the vibrating piece for mass production. Can be planned.

  The polishing accuracy depends on the surface roughness and flatness of the polished surfaces 55 and 59. In this embodiment, rolling polishing after rough polishing and rolling polishing after finish polishing are performed by each polishing (rough polishing, Since it is performed by the same model as (finish polishing), it can be said that the result is not due to the influence of the flatness and surface roughness of the polished surfaces 55 and 59.

  Next, 2nd Embodiment which concerns on the end surface processing method of the circular board | plate material of this invention is described with reference to FIG. Even when the end face processing method according to this embodiment is performed, the polishing apparatus to be used is almost the same as the polishing apparatus 50 used in the first embodiment described above. Therefore, about the location which makes the structure the same, while using FIG. 4 and using the said description, suppose that detailed description is abbreviate | omitted. The difference between the end face processing method according to the present embodiment and the end face processing method according to the first embodiment is the arrangement of the cylindrical members 14. For this reason, in the following description, the configuration of the carrier 10a that defines the arrangement form of the cylindrical member 14 relative to the polishing apparatus 50 will be described together with the details of the arrangement form of the cylindrical member 14 relative to the polishing apparatus 50.

  In the end face processing method according to the present embodiment, the rotation center axis (long side) of the cylindrical member 14 is arranged in a direction orthogonal to the radial direction of the carrier 10a. For this reason, the holding hole 12 formed in the carrier 10a is also provided so that the long side of the holding hole 12 having a rectangular shape is in a direction perpendicular to the radius of the carrier 10a.

A plurality of holding holes 12 provided in the carrier 10a are arranged in parallel in the radial direction so that the long sides orthogonal to the radial direction of the carrier 10a are parallel. Thereby, a plurality of cylindrical members 14 can be arranged in parallel in the radial direction of the carrier 10a, and a large number of curved surfaces of the cylindrical members 14 can be processed by a single polishing process. The holding hole 12 is arranged in the radial direction so as to be substantially cross-shaped with the rotation center of the carrier 10a as a base point, and the holding hole 12 is positioned at a rotation angle of about 45 degrees with the holding hole 12 arranged in the cross-shape. In addition, the holding holes 12 having long sides arranged in a direction orthogonal to the radial direction are provided. By disposing such holding holes 12, it is possible to reduce the dead space of the main surface of the carrier 10a and perform end surface polishing of a larger number of cylindrical members 14 (circular wafers) by one polishing process. . Therefore, it is possible to reduce the processing unit price.
In addition, about another structure, an effect | action, and an effect, it is the same as that of the end surface processing method of the circular wafer which concerns on 1st Embodiment mentioned above.

  In the above embodiment, as a specific example, only the configuration in which the long side of the cylindrical member is arranged along the radial direction of the carrier and the configuration in which the long side of the cylindrical member is arranged in a direction orthogonal to the radial direction of the carrier. Described. However, the method for processing an end face of a circular plate material according to the present invention includes various forms that can be polished while providing rotation and revolution to a cylindrical member to be processed between a pair of surface plates. . Therefore, even when the direction of the holding hole provided in the carrier is random, the effect of the present invention can be obtained and can be regarded as a part of the present invention, and this is realized by a method other than the carrier. It is also possible to make it.

  After the cylindrical member 14 is rolled and polished as described above, the diameter of the cylindrical member 14 in the wafer stacking direction is driven, and then the polishing surface 55 and the upper surface plate of the lower surface plate 54 in the polishing apparatus 50 are obtained. By polishing by rolling a polishing pad on each of the 58 polishing surfaces 59, the end surface of the cylindrical member 14, that is, the end surface of the wafer can be mirror-finished.

  In the mirror processing using the polishing pad, as in the above-described embodiment, the cylindrical member 14 is given revolution, rotation, and rotation in the circumferential direction. For this reason, the polishing is performed uniformly from a plurality of directions, and the defect occurrence rate when performing processing for mirroring the main surface of the circular wafer can be remarkably reduced. FIG. 11 shows a difference in defect occurrence rate when the end surface polishing is not performed before the main surface processing of the circular wafer and when the processing method according to the present embodiment is performed.

  Cracking, chipping, and chipping are the most common occurrences of appearance defects when processing the main surface of a circular wafer. According to FIG. 11, the occurrence rate of cracks was about 8% in the past, but decreased to about 1% when the curved surface processing according to the present embodiment was performed. Further, in the case of chipping and chipping, it was about 4% in the past, but when the curved surface processing according to this embodiment is performed, it is reduced to about 3.6%. And it can be read that the appearance defect rate as a whole can be about half or less of the incidence rate compared to the conventional case.

10 ......... carrier, 12 ......... holding hole, 14 ......... cylindrical member, 50 ......... polishing device, 52 ......... sun gear, 54 ......... lower surface plate, 56 ......... internal gear, 58 ……… Top plate.

Claims (8)

A plurality of circular plates are laminated in the thickness direction to form a cylindrical member,
The main surface of the pair of surface plates constituting the polishing surface is sandwiched so that the curved surface of the cylindrical member abuts,
The cylindrical member is rotated in the circumferential direction of the curved surface, and the cylindrical member is moved freely while the central axis of the cylindrical member is along the main surface.
An end surface processing method for a circular plate material, wherein an abrasive is supplied between the pair of surface plates to polish the outer periphery of the cylindrical member to perform circular processing of the plurality of circular plate materials. It is an end surface processing method of the circular plate material according to claim 1,
The sandwiching of the cylindrical member is performed by a polishing apparatus having an upper surface plate and a lower surface plate,
Rotation imparting to the cylindrical member is sandwiched between the upper surface plate and the lower surface plate in the polishing apparatus, and the cylindrical member is disposed in a holding hole provided in a carrier to which rotation and revolution are imparted. An end face processing method for a circular plate material, characterized in that It is an end surface processing method of the circular plate material according to claim 2,
An end face machining method for a circular plate material, wherein the cylindrical member is disposed in the holding holes that have a rectangular opening shape and are radially disposed with a rotation center axis of the carrier as a base point. It is an end surface processing method of the circular plate material according to claim 3,
An end face processing method for a circular plate material, wherein the cylindrical member is disposed in the holding hole in which the long side of the rectangle is disposed along a radial direction of the carrier. It is an end surface processing method of the circular plate material according to claim 3,
An end face machining method for a circular plate material, wherein the cylindrical member is disposed in the holding hole in which the long side of the rectangle is disposed in a direction orthogonal to a radial direction of the carrier. A method for processing an end face of a circular plate material according to any one of claims 2 to 5,
The method of processing an end face of a circular plate material, wherein the holding hole has a size larger than an outer diameter when the cylindrical member is viewed in plan. A processing apparatus having a pair of surface plates composed of a lower surface plate and an upper surface plate, and a carrier disposed between the pair of surface plates and imparted with revolution and rotation,
The processing apparatus, wherein the carrier is provided with a holding hole for holding the object to be processed while being in rolling contact with the polishing surface of the pair of surface plates. The processing apparatus according to claim 7,
The holding device has a rectangular opening shape and is arranged radially with the center axis of rotation of the carrier as a base point.

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