CN1301184C - Optical grinding machine and method for processing sapphire crystal substrate for semiconductor use - Google Patents
Optical grinding machine and method for processing sapphire crystal substrate for semiconductor use Download PDFInfo
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- CN1301184C CN1301184C CNB2003101211355A CN200310121135A CN1301184C CN 1301184 C CN1301184 C CN 1301184C CN B2003101211355 A CNB2003101211355 A CN B2003101211355A CN 200310121135 A CN200310121135 A CN 200310121135A CN 1301184 C CN1301184 C CN 1301184C
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- 238000000034 method Methods 0.000 title claims abstract description 34
- 238000012545 processing Methods 0.000 title claims abstract description 34
- 239000013078 crystal Substances 0.000 title claims abstract description 26
- 229910052594 sapphire Inorganic materials 0.000 title claims abstract description 26
- 239000010980 sapphire Substances 0.000 title claims abstract description 26
- 230000003287 optical effect Effects 0.000 title claims abstract description 22
- 239000004065 semiconductor Substances 0.000 title claims abstract description 19
- 239000000758 substrate Substances 0.000 title claims description 34
- 238000005498 polishing Methods 0.000 claims abstract description 35
- 239000003082 abrasive agent Substances 0.000 claims abstract description 19
- 229910010271 silicon carbide Inorganic materials 0.000 claims abstract description 10
- 229910052580 B4C Inorganic materials 0.000 claims abstract description 8
- INAHAJYZKVIDIZ-UHFFFAOYSA-N boron carbide Chemical compound B12B3B4C32B41 INAHAJYZKVIDIZ-UHFFFAOYSA-N 0.000 claims abstract description 8
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims abstract description 7
- 239000012530 fluid Substances 0.000 claims abstract description 6
- 239000000498 cooling water Substances 0.000 claims description 7
- 238000007514 turning Methods 0.000 claims description 5
- 239000007788 liquid Substances 0.000 claims description 4
- 229920000768 polyamine Polymers 0.000 claims description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 3
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- 239000000463 material Substances 0.000 description 8
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- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Abstract
The present invention belongs to the technical field of the surface processing of optical elements, which relates to an optical grinder and a method for processing sapphire crystal base sheets for semiconductors. The grinder comprises a machine frame, a working table panel, a water basin, a motor and a vertical rotating shaft driven by the motor, wherein the top of the rotating shaft is provided with a lower grinding disc, a supporting pressing mechanism of an upper grinding disc, an upper grinding disc arranged below the lower grinding disc and a cooling liquid conveying device; the lower grinding disc is composed of a base plate, an annular gear arranged on the base plate, a sun wheel of an external tooth and a plurality of star plates. The processing method comprises the steps that the grinding disc made of silicon carbide is sued, boron carbide is used as abrasives for rough grinding and fine grinding, a poly ammonium ester membrane is used as a polishing cover, and silicon oxide polishing fluid is used for polishing. The present invention has the characteristics of high machining efficiency, low processing cost and high process precision, can satisfy the processing requirements of the optical sapphire crystal base sheets for the semiconductors, and is favorable for industrial production.
Description
Technical field the invention belongs to the optical element surface processing technique field, particularly the film forming system of crystal substrates and method of surface finish thereof.
Background technology sapphire (Al
2O
3) be six side's symmetrical structures, it possesses good optics and physical property as the hardest oxide crystal.Its mechanical strength is higher, and resistance to chemical attack has good thermal conductivity, heat endurance, and transmission region is wide, be desirable window substrate stock, in addition, it has electrical insulating property, stable chemical performance, drain capacitance and parasitic capacitance are little, are fabulous semiconductor, superconduction backing materials.
The sapphire crystal substrates of using as substrate is generally Φ 2, and " (2 inches) have 50.80mm * 0.30mm, two kinds of specifications of 50.80mm * 0.43mm.Optics sapphire crystal substrates as Semiconductor substrate has very high requirement to its surface, comprise that flatness (face shape is not advised aperture N. Δ N) reaches 0.2/ λ and interferes area, the depth of parallelism (θ) reaches 0.005mm, fineness (B) or roughness (Ra) reaches 0.5nm.
Traditional planar optical elements surface grinding machine (being called for short the optical grinding machine) as shown in Figure 1, mainly comprises frame 11, and a worktable panel 12 is installed on the frame, and a basin 13 and cooling fluid conveying device (not shown) are installed on the workbench; A vertical rotation axle 15 that motor 14 is installed in the frame and drives, this turning cylinder passes from the basin bottom, and a lower millstone 161 is installed at its top, and a upper millstone 162 is set on it; Upper millstone is installed on the workbench supports pressure exerting arrangement, the end that this mechanism generally includes 17 3 pull bars of a tripod links to each other with tripod by universal joint, the other end of three pull bars links to each other with upper millstone 162, also establishes a thimble 18 on the upper millstone 162 it is exerted pressure.Its operation principle is: the driven by motor turning cylinder rotates with lower millstone, and upper millstone is subjected to the pressure of thimble to rotate with lower millstone and swung by last surface pull rod.
Use the said equipment that the method that optical element carries out Surface Machining is divided into corase grind, fine grinding and polishing three phases,
Concrete procedure of processing is as follows:
At first element to be processed 19 is sticked on the upper millstone, the rotation by last lower millstone and finish the processing on a surface with the friction of abrasive, process one side after, heating is come unstuck, and unloading piece is also reverse pastes, reprocess second, also will add abrasive and cooling water in the process, and polishing fluid.This equipment can be finished the surface from roughly grinding, be finely ground to whole machining processes of polishing by changing the material of abrasive and mill.
Traditional corase grind, fine grinding mill generally cylinder iron or material such as copper make, along with the variation of room temperature and processing temperature, the mill surface irregularity also can produce very little variation, its reconditioning often, distortion is big.In addition, mill must be convinced chute (square groove or garden groove) by patient analysis, otherwise abrasive material is between mill and machined surface, by running speed and impressed pressure, the acute angle of abrasive material produces cut to finished surface, by many abrasive materials cut constantly, so abrasive material retains what, also just directly influence grinding efficiency.When mill grinds more at ordinary times, machined surface also is flat, and abrasive material just should not enter the surface, and takes away from the edge.
Traditional polishing disk adopts copper, iron, pottery, jewel to make mill, the polishing material that tradition polishes a gem is a diadust, the liquid of making polishing material or modulating with the abrasive pastes of the diadust of W0.5 preparation with micro mist and oil, face shape roughness with its processing does not reach requirement, and its processing cost is relatively more expensive.
Above-mentioned equipment and processing method also have the following disadvantages:
1, efficient is low, processing in general 8 hours 1 or 3-7 sheet;
2, workpiece is taked the gluing fixation, has increased last dish unloading piece heating process, because the generation thermal deformation of coming unstuck has increased the irregular of plane interference striped;
3, various rotating speeds fixedly mix up, and in fact have only two kinds of motion modes and rotating speed, and promptly workpiece is rotated the axle drive and can rotates and swing the movement locus repetition.The amount of grinding size increases the weight of upper millstone by thimble to be estimated to detect, and science after size will be unloaded dish, has not been cleaned actual measurement and just known.
4, the diameter of general workpiece can not be too big, want to process the above substrate of φ 50 * 0.4mm, the one, easy fragmentation, the 2nd, inaccessiable as the desired technical indicator of Semiconductor substrate substrate to flatness, the depth of parallelism and fineness (B) or the roughness (Ra) on surface, difficulty of processing is very big.
Summary of the invention the objective of the invention is for overcoming the weak point of prior art, a kind of optical grinding machine is proposed and with its processing semiconductor method with optics sapphire crystal substrates, have the working (machining) efficiency height, processing cost is low, the characteristics that machining accuracy is high can satisfy semiconductor with the processing request of optics sapphire crystal substrates and help industrialization.
A kind of processing semiconductor that the present invention proposes optical grinding machine of sapphire crystal substrates, mainly comprise frame, one worktable panel is installed on the frame, one basin is installed on the workbench, a vertical rotation axle of motor and drive thereof is installed in the frame, this turning cylinder passes from the basin bottom, a lower millstone is installed at its top, the support pressure exerting arrangement of upper millstone is installed on the workbench, and with support pressure exerting arrangement and link to each other and place upper millstone on the lower millstone and cooling fluid conveying device; It is characterized in that, said lower millstone by the chassis, be arranged on the ring gear of chassis outer circumference and be arranged on the external tooth sun gear in the center of circle, chassis, wandering star plate more than one is formed, this wandering star plate outer rim has external tooth, and every block of wandering star plate is meshing with each other with the ring gear and the external tooth sun gear of other wandering star plate and outer circumference respectively simultaneously; The height of said ring gear, external tooth sun gear and the wandering star plate all final thickness with workpiece is identical or smaller; Every block of wandering star plate has more than one and the corresponding through hole of workpiece external diameter, and workpiece is placed in one just; Said support pressure exerting arrangement comprises the gas compressor that is installed in the frame, be installed in the stand on the workbench, be installed in the pressure inflator and the upper millstone shift mechanism that link to each other with gas compressor in the stand, an and force pipe, one end of this force pipe is connected with the pressure inflator, and the other end is fixed on upper millstone back side central spot.
The present invention proposes to adopt the method for the said equipment processing semiconductor with the sapphire crystal substrates, comprises corase grind, fine grinding and polishing three phases, it is characterized in that, concrete procedure of processing is as follows:
Corase grind:
1) paste the identical size of a slice on the surface of the upper and lower mill of optical grinding machine, granularity is the silicon carbide plate of W180;
2) in that intermeshing ring gear, external tooth sun gear, the wandering star plate of the band external tooth that has an above through hole more than one are installed on the lower millstone of grinder, sapphire crystal substrates to be processed is placed in the through hole of wandering star plate;
3) start grinder, add abrasive material and cooling water in the process of lapping, it is the boron carbide of 14-20 millimeter that abrasive material is selected granularity for use, and shutdown when the thickness of workpiece reaches 0.5 ± 0.01 millimeter of error of institute's required thickness finishes corase grind;
Fine grinding:
4) start grinder, add abrasive material and cooling water in the process of lapping, it is the boron carbide of 7-5 millimeter that abrasive material is selected granularity for use, and shutdown when the thickness of workpiece reaches 0.46 ± 0.005 millimeter of error of institute's required thickness finishes fine grinding;
Polishing:
5) be that the polyamine ester film of 0.5-1 millimeter sticks on the upper and lower mill surface as the polishing skin with thickness, diameter and the mill of polishing skin identical;
6) intermeshing ring gear, external tooth sun gear are being installed on the lower millstone of grinder and are being had the wandering star plate that has external tooth of an above through hole more than one, the sapphire crystal substrates that fine grinding is good is placed in the through hole of wandering star plate;
7) start grinder, add oxidation silicon polishing liquid in the polishing process, the temperature of polishing fluid is the 32-45 degree, shuts down when 8000-9000 changes when total revolution reaches, and finishes whole process.
Characteristics of the present invention and effect:
Grinder: 1) the present invention is 4 kinds of rotating manners and speed, i.e. lower millstone rotation, and the wandering star dish had not only revolved round the sun but also the wandering star motion of rotation, and workpiece can little commentaries on classics in the wandering star dish, and upper millstone is because friction drives backward rotation, and no track moves; Grinding resistance is little, has improved the flatness precision of workpiece; Do not damage workpiece, two sides Even Grinding, production efficiency height.2) not using dish, is to keep forging ahead automatically, and not gluing has cut the distortion of heating upper lower burrs, has reduced the distortion on plane.3) machining accuracy height, but the workpiece diameter is big.Quality can reach various substrates, the particularly semiconductor requirement of the optical index of sapphire crystal substrates.5), production efficiency height of the present invention: can form industrialization, significantly reduce cost.
Processing method: 1) the present invention adopts carborundum as the thickness mill, and boron carbide adopts Polyurethane polishing skin as polishing disk as abrasive material, and silica solution is a polishing fluid, and machined parameters rationally is set; 2) workpiece is directly put into the through hole of wandering star plate, need not heat and get sheet, 3) by ring gear and external tooth sun gear being installed on the lower millstone and the wandering star plate carries out multi-disc, the two sides processes simultaneously, efficient height not only, and satisfied the processing request of highly difficult semiconductor with the sapphire crystal substrates.
Description of drawings
Fig. 1 is existing optical grinding machine structural representation.
Fig. 2 is an optical grinding machine structural representation of the present invention.
Fig. 3 is a lower millstone structure embodiment schematic diagram of the present invention.
A kind of optical grinding machine that specific embodiment the present invention proposes and with the method for its processing semiconductor usefulness sapphire crystal substrates is described in detail as follows in conjunction with the embodiments:
The structure of the optical grinding machine embodiment of the present invention's design as shown in Figure 2, mainly comprise rack 21, one worktable panel 22 is installed on the rack, one basin 23 is installed on the workbench, gas compressor (not shown) and motor 24 are installed in the frame, the vertical rotation axle 25 that motor drives by stepless speed adjusting gear and gear drive 241, this turning cylinder passes from the basin bottom, a lower millstone 261 is installed at its top, one stand 27 is installed on the workbench, the pressure inflator 281 that links to each other with gas compressor and the shift mechanism 271 and the coolant pipe 272 of upper millstone 262 are installed in the stand, one end of one force pipe 282 is connected with pressure inflator 281, and the other end is fixed on upper millstone 262 back side central spot.Above-mentioned parts all can select for use conventional products to assemble.
The operation instrument 29 realization process of being made up of survey tachometer, measuring pressure meter, timer and various control button also can be installed on the worktable panel of present embodiment control (operation instrument is the outsourcing mature equipment, also can not be provided with by the processing of traditional approach manual measurement) automatically.
The lower millstone structure of present embodiment as shown in Figure 3, by chassis 2611, be arranged on the ring gear 2612 of chassis outer circumference and be arranged on the external tooth sun gear 2613 in the center of circle, chassis, five blocks of wandering star plates 2614 constitute, this wandering star plate outer rim has external tooth, and every block of wandering star plate is meshing with each other with the ring gear 2612 of other wandering star plate and outer circumference and the external tooth sun gear 2613 in the center of circle, chassis respectively simultaneously; The height of said ring gear 2612, external tooth sun gear 2613 and wandering star plate 2614 is identical and identical or smaller with the final thickness of workpiece.Every block of wandering star plate all has five and the corresponding through hole 2615 of workpiece external diameter (being slightly larger than the workpiece external diameter), and workpiece is placed in one just.The through hole number that the piece number of wandering star plate of the present invention and wandering star plate are opened is not limited to number that present embodiment is lifted according to mill size and any setting of workpiece size.Upper millstone of the present invention supports pressure exerting arrangement also can adopt traditional structure.
The characteristics of present embodiment: 1) grinding resistance is little, does not damage workpiece, two sides Even Grinding, production efficiency height, 25 of time processing (can adorn 5 in wandering star dish of 5 wandering star dishes).2) not using dish, is to keep forging ahead automatically, and not gluing has cut the distortion of heating upper lower burrs, has reduced the distortion on plane; 3) control amount of grinding automatically by operation instrument, amount of gas pressure, speed is with the levelling of processing dimension amount size; Easy to operate, go slick, adopt infinitely variable speeds, start steadily; 4) present embodiment can disposable processing 25, working (machining) efficiency height, 5) quality can reach various substrates, and the depth of parallelism evenly is controlled within the 0.002mm automatically; The even breakage of pressure is in 99.5%; The particularly semiconductor requirement of the optical index of sapphire crystal substrates.
A kind of and the above-mentioned method embodiment that uses optics grinder processing semiconductor with the sapphire crystal substrates that the present invention proposes comprises corase grind, fine grinding and polishing three phases, and concrete procedure of processing is as follows:
Corase grind:
1) pastes the silicon carbide plate of the identical size of a slice on the surface of the upper and lower mill of optical grinding machine, its thickness is the 28-30 millimeter, and granularity is the W180 granularity, and the thickness size only is directly proportional with service life, not available too in this scope, or directly adopt silicon carbide grinding wheel;
2) ring gear 2612 and 2613, five blocks of wandering star plates 2614 of external tooth sun gear are installed on the lower millstone of grinder, 25 sapphire crystal substrates to be processed are placed in the through hole of wandering star plate;
3) start grinder, add abrasive material and cooling water in the process of lapping, it is the boron carbide of 14-20 millimeter that abrasive material can be selected granularity for use, the rotating speed of lower millstone is 30-40 rev/min (also can not in this scope), shutdown when the thickness of workpiece reaches 0.5 ± 0.01 millimeter of error of institute's required thickness finishes corase grind;
Fine grinding:
4) start grinder, add abrasive material and cooling water in the process of lapping, it is the boron carbide of 7-5 millimeter that abrasive material can be selected granularity for use, the rotating speed of lower millstone is 30-40 rev/min (also can not in this scope), shutdown when the thickness of workpiece reaches 0.46 ± 0.005 millimeter of error of institute's required thickness finishes fine grinding;
Polishing: be that the polyamine ester film of 0.5-1 millimeter sticks on the upper and lower mill surface as the polishing skin with thickness 5), the diameter that polishes skin is identical with mill;
6) ring gear 2612 and 2613, five blocks of wandering star plates 2614 of external tooth sun gear are installed on the lower millstone of grinder, 25 sapphire crystal substrates that fine grinding is good are placed in the through hole of wandering star plate;
7) start grinder, add oxidation silicon polishing liquid in the polishing process, the temperature of polishing fluid is the 32-45 degree, and the rotating speed of lower millstone is 25-50 rev/min (also can not in this scope), and shutdown when total revolution reaches 8000-9000 and changes finishes whole process.
The present embodiment process can make qualification rate reach more than 98% (to comprise accidental damage), and sapphire substrate leading indicator is roughness (Ra), can obtain roughness less than 0.3 nanometer.
It is abrasive disk that the carbonization emery wheel also can be directly adopted in grinding in this method and fine grinding, and granularity is the W180 granularity, in case and present carborundum emery disc equating, it varies with temperature not quite.And the granularity of W180# silicon carbide grinding wheel dish all is made up of the 60-80 micron, and particle has many micropores each other, and the sand holes of leaving over of W20-W5 granularity micro powder granule retain on the mill surface like this, and so grinding rate just improves many.
The present embodiment fine grinding stage can be selected W20 for use, W14, and three kinds of boron carbides of W7 are better as grinding-material, and this material hardness is only second to diamond, but its preparation cost is lower, and higher again than the hardness of carborundum and diamond dust, its working (machining) efficiency is also high.
Present embodiment is selected silica solvent and polishing agent for use, its process principle, except that the physical grinding Principle of Grinding and Cutting is arranged, also having chemical polishing mechanism or branch to be similar to ordinary optical ripple glass uses the chemical polishing mechanism of oxide cmp similar, this theory confirms by practical operation, at spindle speed is 25 rev/mins, is worked into to be equivalent to 9000 and to change (about 6 hours) and finish polishing.
4, adopt Polyurethane polishing skin (all available) in the present embodiment both at home and abroad, this polyamine fat dispels the heat as the polishing wave material, grinding, and costs etc. are excellent.
5, for so thin (φ is 50.80, and thick is 0.3-0.4mm) the sapphire substrate of processing, because the principle of expanding with heat and contract with cold, difficulty of processing is very big.Present embodiment adopts the separator principle, gets small size in the large tracts of land.For example in the present embodiment: lathe (mill external diameter) φ 640mm, process substrates is: φ 50.80.The mill flatness is 10/ λ, and workpiece reaches: 0.1/ λ, add automatic adjusting air pressure, and do not heat upper lower burrs, so guaranteed flatness (flatness).
Claims (3)
1, a kind of processing semiconductor optical grinding machine of sapphire crystal substrates, mainly comprise frame, one worktable panel is installed on the frame, one basin is installed on the workbench, a vertical rotation axle of motor and drive thereof is installed in the frame, this turning cylinder passes from the basin bottom, a lower millstone is installed at its top, the support pressure exerting arrangement of upper millstone is installed on the workbench, and with support pressure exerting arrangement and link to each other and place upper millstone on the lower millstone and cooling fluid conveying device; It is characterized in that, said lower millstone by the chassis, be arranged on the ring gear of chassis outer circumference and be arranged on the external tooth sun gear in the center of circle, chassis, wandering star plate more than one is formed, this wandering star plate outer rim has external tooth, and every block of wandering star plate is meshing with each other with the ring gear and the external tooth sun gear of other wandering star plate and outer circumference respectively simultaneously; The height of said ring gear, external tooth sun gear and the wandering star plate all final thickness with workpiece is identical or smaller; Every block of wandering star plate has more than one and the corresponding through hole of workpiece external diameter, and workpiece is placed in one just; Said support pressure exerting arrangement comprises the gas compressor that is installed in the frame, be installed in the stand on the workbench, be installed in the pressure inflator and the upper millstone shift mechanism that link to each other with gas compressor in the stand, an and force pipe, one end of this force pipe is connected with the pressure inflator, and the other end is fixed on upper millstone back side central spot.
2, a kind of processing semiconductor comprises corase grind, fine grinding and polishing three phases with the method for sapphire crystal substrates, it is characterized in that, concrete procedure of processing is as follows:
Corase grind:
1) paste the identical size of a slice on the surface of the upper and lower mill of optical grinding machine, granularity is the silicon carbide plate of W180;
2) in that intermeshing ring gear, external tooth sun gear, the wandering star plate of the band external tooth that has an above through hole more than one are installed on the lower millstone of grinder, sapphire crystal substrates to be processed is placed in the through hole of wandering star plate;
3) start grinder, add abrasive material and cooling water in the process of lapping, it is the boron carbide of 14-20 millimeter that abrasive material is selected granularity for use, and shutdown when the thickness of workpiece reaches 0.5 ± 0.01 millimeter of error of institute's required thickness finishes corase grind;
Fine grinding:
4) start grinder, add abrasive material and cooling water in the process of lapping, it is the boron carbide of 7-5 millimeter that abrasive material is selected granularity for use, and shutdown when the thickness of workpiece reaches 0.46 ± 0.005 millimeter of error of institute's required thickness finishes fine grinding;
Polishing:
5) be that the polyamine ester film of 0.5-1 millimeter sticks on the upper and lower mill surface as the polishing skin with thickness, diameter and the mill of polishing skin identical;
6) intermeshing ring gear, external tooth sun gear are being installed on the lower millstone of grinder and are being had the wandering star plate that has external tooth of an above through hole more than one, the sapphire crystal substrates that fine grinding is good is placed in the through hole of wandering star plate;
7) start grinder, add oxidation silicon polishing liquid in the polishing process, the temperature of polishing fluid is the 32-45 degree, shuts down when 8000-9000 changes when total revolution reaches, and finishes whole process.
As the method for processing semiconductor as described in the claim 2, it is characterized in that 3, the upper and lower mill in said corase grind, fine grinding stage adopts silicon carbide grinding wheel with the sapphire crystal substrates.
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| Application Number | Priority Date | Filing Date | Title |
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| CNB2003101211355A CN1301184C (en) | 2003-12-16 | 2003-12-16 | Optical grinding machine and method for processing sapphire crystal substrate for semiconductor use |
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| Application Number | Priority Date | Filing Date | Title |
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| CNB2003101211355A CN1301184C (en) | 2003-12-16 | 2003-12-16 | Optical grinding machine and method for processing sapphire crystal substrate for semiconductor use |
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| CN1546283A CN1546283A (en) | 2004-11-17 |
| CN1301184C true CN1301184C (en) | 2007-02-21 |
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| CN108381377A (en) * | 2018-04-17 | 2018-08-10 | 东海县太阳光新能源有限公司 | A kind of quartz grinding mill |
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| CN100392818C (en) * | 2004-12-08 | 2008-06-04 | 中国电子科技集团公司第四十六研究所 | Method for processing chip capable of improving semiconductor chip geometric parameter |
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