CN1546283A - Optical grinding machine and method for processing sapphire crystal substrate for semiconductor use - Google Patents
Optical grinding machine and method for processing sapphire crystal substrate for semiconductor use Download PDFInfo
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- CN1546283A CN1546283A CNA2003101211355A CN200310121135A CN1546283A CN 1546283 A CN1546283 A CN 1546283A CN A2003101211355 A CNA2003101211355 A CN A2003101211355A CN 200310121135 A CN200310121135 A CN 200310121135A CN 1546283 A CN1546283 A CN 1546283A
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Abstract
The invention belongs to optical element surface processing technology field, which refers to optical abrader and a method for using the abrader to process sapphire crystal chip. The abrader includes a bracket, a table panel, a basin, an electric motor and a vertical train axis driven by the motor, there sets a supporting and pressing mechanism of a subjacent abrasive disc and a upper disc on top of the train axis, and a upper abrasive disc on the subjacent abrasive disc, and cooling liquid transmitting device; the subjacent abrasive disc is made up of bottom disc, the inner gear ring on the bottom disc, outer gear sun wheel and several star boards. The process method includes using abrasive disc made up of silicon carbide, carries on raw and fine milling with boron carbide, uses polyammoniumester film as polishing skin, uses silicon oxide polishing liquid to polish. The efficiency of the invention is high.
Description
Technical field the invention belongs to the optical element surface processing technique field, particularly the film forming system of crystal substrates and method of surface finish thereof.
Background technology sapphire (Al
2O
3) be six side's symmetrical structures, it possesses good optics and physical property as the hardest oxide crystal.Its mechanical strength is higher, and resistance to chemical attack has good thermal conductivity, thermal stability, and transmission region is wide, be desirable window substrate stock, in addition, it has electrical insulating property, stable chemical performance, drain capacitance and parasitic capacitance are little, are fabulous semiconductor, superconduction backing materials.
The sapphire crystal substrates of using as substrate is generally φ 2, and " (2 inches) have 50.80mm * 0.30mm, two kinds of specifications of 50.80mm * 0.43mm.Optics sapphire crystal substrates as Semiconductor substrate has very high requirement to its surface, comprise that flatness (face shape is not advised aperture N. Δ N) reaches 0.2/ λ and interferes area, the depth of parallelism (θ) reaches 0.005mm, fineness (B) or roughness (Ra) reaches 0.5nm.
Traditional planar optical elements surface grinding machine (being called for short the optical grinding machine) as shown in Figure 1, mainly comprises frame 11, and a worktable panel 12 is installed on the frame, and a basin 13 and cooling fluid conveying device (not shown) are installed on the workbench; A vertical rotation axle 15 that motor 14 is installed in the frame and drives, this rotation axis passes from the basin bottom, and a lower millstone 161 is installed at its top, and a upper millstone 162 is set on it; Upper millstone is installed on the workbench supports pressure exerting arrangement, the end that this mechanism generally includes 17 3 pull bars of a tripod links to each other with tripod by universal joint, the other end of three pull bars links to each other with upper millstone 162, also establishes a thimble 18 on the upper millstone 162 it is exerted pressure.Its operation principle is: the driven by motor rotation axis rotates with lower millstone, and upper millstone is subjected to the pressure of thimble to rotate with lower millstone and swung by last surface pull rod.
Use the said equipment that the method that optical element carries out Surface Machining is divided into corase grind, fine grinding and polishing three phases, concrete procedure of processing is as follows:
At first element to be processed 19 is sticked on the upper millstone, the rotation by last lower millstone and finish the processing on a surface with the friction of abrasive, process one side after, heating is come unstuck, and unloading piece is also reverse pastes, reprocess second, also will add abrasive and cooling water in the course of processing, and polishing fluid.This equipment can be finished the surface from roughly grinding, be finely ground to whole machining processes of polishing by changing the material of abrasive and mill.
Traditional corase grind, fine grinding mill generally cylinder iron or material such as copper make, along with the variation of room temperature and processing temperature, the mill surface irregularity also can produce very little variation, its reconditioning often, distortion is big.In addition, mill must be convinced chute (square groove or garden groove) by patient analysis, otherwise abrasive material is between mill and machined surface, by running speed and impressed pressure, the acute angle of abrasive material produces cut to finished surface, by many abrasive materials cut constantly, so abrasive material retains what, also just directly influence grinding efficiency.When mill grinds more at ordinary times, machined surface also is flat, and abrasive material just should not enter the surface, and takes away from the edge.
Traditional polishing disk adopts copper, iron, pottery, jewel to make mill, the polishing material that tradition polishes a gem is a diadust, the liquid of making polishing material or modulating with the abrasive pastes of the diadust of W0.5 preparation with micro mist and oil, face shape roughness with its processing does not reach requirement, and its processing cost is relatively more expensive.
Above-mentioned equipment and processing method also have the following disadvantages:
1, efficient is low, processing in general 8 hours 1 or 3-7 sheet;
2, workpiece is taked the gluing fixation, has increased last dish unloading piece heating process, because the generation thermal deformation of coming unstuck has increased the irregular of plane interference striped;
3, various rotating speeds fixedly mix up, and in fact have only two kinds of motion modes and rotating speed, and promptly workpiece is rotated the axle drive and can rotates and swing the movement locus repetition.The amount of grinding size increases the weight of upper millstone by thimble to be estimated to detect, and science after size will be unloaded dish, has not been cleaned actual measurement and just known.
4, the diameter of general workpiece can not be too big, want to process the above substrate of φ 50 * 0.4mm, the one, easy fragmentation, the 2nd, inaccessiable as the desired technical indicator of Semiconductor substrate substrate to flatness, the depth of parallelism and fineness (B) or the roughness (Ra) on surface, difficulty of processing is very big.
Summary of the invention the objective of the invention is for overcoming the weak point of prior art, a kind of optical grinding machine is proposed and with its processing semiconductor method with optics sapphire crystal substrates, have the working (machining) efficiency height, processing cost is low, the characteristics that machining accuracy is high can satisfy semiconductor with the processing request of optics sapphire crystal substrates and help industrialization.
A kind of optical grinding machine that the present invention proposes, mainly comprise frame, one worktable panel is installed on the frame, one basin is installed on the workbench, a vertical rotation axle of motor and drive thereof is installed in the frame, this rotation axis passes from the basin bottom, a lower millstone is installed at its top, the support pressure exerting arrangement of upper millstone is installed on the workbench, and with support pressure exerting arrangement and link to each other and place upper millstone on the lower millstone and cooling fluid conveying device; It is characterized in that, said lower millstone by the chassis, be arranged on the ring gear of chassis outer circumference and be arranged on the external tooth sun gear in the center of circle, chassis, wandering star plate more than one is formed, this wandering star plate outer rim has external tooth, and every block of wandering star plate is meshing with each other with the ring gear and the external tooth sun gear of other wandering star plate and outer circumference respectively simultaneously; The height of said ring gear, external tooth sun gear and the wandering star plate all final thickness with workpiece is identical or smaller; Every block of wandering star plate has more than one and the corresponding through hole of workpiece external diameter, and workpiece is placed in one just.
The present invention proposes to adopt the method for the said equipment processing semiconductor with the sapphire crystal substrates, comprises corase grind, fine grinding and polishing three phases, it is characterized in that, concrete procedure of processing is as follows:
Corase grind:
1) paste the identical size of a slice on the surface of the upper and lower mill of optical grinding machine, granularity is the silicon carbide plate of W180;
2) in that intermeshing ring gear, external tooth sun gear, the wandering star plate of the band external tooth that has an above through hole more than one are installed on the lower millstone of grinder, sapphire crystal substrates to be processed is placed in the through hole of wandering star plate;
3) start grinder, add abrasive material and cooling water in the process of lapping, it is the boron carbide of 14-20 millimeter that abrasive material is selected granularity for use, and shutdown when the thickness of workpiece reaches 0.5 ± 0.01 millimeter of error of institute's required thickness finishes corase grind;
Fine grinding:
4) start grinder, add abrasive material and cooling water in the process of lapping, it is the boron carbide of 7-5 millimeter that abrasive material is selected granularity for use, and shutdown when the thickness of workpiece reaches 0.46 ± 0.005 millimeter of error of institute's required thickness finishes fine grinding;
Polishing:
5) be that the polyammonium ester membrane of 0.5-1 millimeter sticks on the upper and lower mill surface as the polishing skin with thickness, diameter and the mill of polishing skin identical;
6) intermeshing ring gear, external tooth sun gear are being installed on the lower millstone of grinder and are being had the wandering star plate that has external tooth of an above through hole more than one, the sapphire crystal substrates that fine grinding is good is placed in the through hole of wandering star plate;
7) start grinder, add oxidation silicon polishing liquid in the polishing process, the temperature of polishing fluid is the 32-45 degree, shuts down when 8000-9000 changes when total revolution reaches, and finishes the whole course of processing.
Characteristics of the present invention and effect:
Grinder: 1) the present invention is 4 kinds of rotating manners and speed, i.e. lower millstone rotation, and the wandering star dish had not only revolved round the sun but also the wandering star motion of rotation, and workpiece can little commentaries on classics in the wandering star dish, and upper millstone is because friction drives backward rotation, and no track moves; Grinding resistance is little, has improved the flatness precision of workpiece; Do not damage workpiece, two sides Even Grinding, production efficiency height.2) not using dish, is to keep forging ahead automatically, and not gluing has cut the distortion of heating upper lower burrs, has reduced the distortion on plane.3) machining accuracy height, but the workpiece diameter is big.Quality can reach various substrates, the particularly semiconductor requirement of the optical index of sapphire crystal substrates.5), production efficiency height of the present invention: can form industrialization, significantly reduce cost.
Processing method: 1) the present invention adopts carborundum as the thickness mill, and boron carbide adopts Polyurethane polishing skin as polishing disk as abrasive material, and silica solution is a polishing fluid, and machined parameters rationally is set; 2) workpiece is directly put into the through hole of wandering star plate, need not heat and get sheet, 3) by ring gear and external tooth sun gear being installed on the lower millstone and the wandering star plate carries out multi-disc, the two sides processes simultaneously, efficient height not only, and satisfied the processing request of highly difficult semiconductor with the sapphire crystal substrates.
Description of drawings
Fig. 1 is existing optical grinding machine structural representation.
Fig. 2 is an optical grinding machine structural representation of the present invention.
Fig. 3 is a lower millstone structure embodiment schematic diagram of the present invention.
A kind of optical grinding machine that embodiment the present invention proposes and with the method for its processing semiconductor usefulness sapphire crystal substrates is described in detail as follows in conjunction with the embodiments:
The structure of the optical grinding machine embodiment of the present invention's design as shown in Figure 2, mainly comprise rack 21, one worktable panel 22 is installed on the rack, one basin 23 is installed on the workbench, gas compressor (not shown) and motor 24 are installed in the frame, the vertical rotation axle 25 that motor drives by stepless speed adjusting gear and gear drive 241, this rotation axis passes from the basin bottom, a lower millstone 261 is installed at its top, one stand 27 is installed on the workbench, the pressure inflator 281 that links to each other with gas compressor and the shift mechanism 271 and the coolant pipe 272 of upper millstone 262 are installed in the stand, one end of one force pipe 282 is connected with pressure inflator 281, and the other end is fixed on upper millstone 262 back side central spot.Above-mentioned parts all can select for use conventional products to assemble.
The operation instrument 29 realization courses of processing of being made up of survey tachometer, measuring pressure meter, timer and various control button also can be installed on the worktable panel of present embodiment control (operation instrument is the outsourcing mature equipment, also can not be provided with by the processing of traditional approach manual measurement) automatically.
The lower millstone structure of present embodiment as shown in Figure 3, by chassis 2611, be arranged on the ring gear 2612 of chassis outer circumference and be arranged on the external tooth sun gear 2613 in the center of circle, chassis, five blocks of wandering star plates 2614 constitute, this wandering star plate outer rim has external tooth, and every block of wandering star plate is meshing with each other with the ring gear 2612 of other wandering star plate and outer circumference and the external tooth sun gear 2613 in the center of circle, chassis respectively simultaneously; The height of said ring gear 2612, external tooth sun gear 2613 and wandering star plate 2614 is identical and identical or smaller with the final thickness of workpiece.Every block of wandering star plate all has five and the corresponding through hole 2615 of workpiece external diameter (being slightly larger than the workpiece external diameter), and workpiece is placed in one just.The through hole number that the piece number of wandering star plate of the present invention and wandering star plate are opened is not limited to number that present embodiment is lifted according to mill size and any setting of workpiece size.Upper millstone of the present invention supports pressure exerting arrangement also can adopt traditional structure.
The characteristics of present embodiment: 1) grinding resistance is little, does not damage workpiece, two sides Even Grinding, production efficiency height, 25 of time processing (can adorn 5 in wandering star dish of 5 wandering star dishes).2) not using dish, is to keep forging ahead automatically, and not gluing has cut the distortion of heating upper lower burrs, has reduced the distortion on plane; 3) control amount of grinding automatically by operation instrument, amount of gas pressure, speed is with the levelling of processing dimension amount size; Easy to operate, go slick, adopt infinitely variable speeds, start steadily; 4) present embodiment can disposable processing 25, working (machining) efficiency height, 5) quality can reach various substrates, and the depth of parallelism evenly is controlled within the 0.002mm automatically; The even breakage of pressure is in 99.5%; The particularly semiconductor requirement of the optical index of sapphire crystal substrates.
A kind of and the above-mentioned method embodiment that uses optics grinder processing semiconductor with the sapphire crystal substrates that the present invention proposes comprises corase grind, fine grinding and polishing three phases, and concrete procedure of processing is as follows:
Corase grind:
1) pastes the silicon carbide plate of the identical size of a slice on the surface of the upper and lower mill of optical grinding machine, its thickness is the 28-30 millimeter, and granularity is the W180 granularity, and the thickness size only is directly proportional with useful life, not available too in this scope, or directly adopt silicon carbide grinding wheel;
2) ring gear 2612 and 2613, five blocks of wandering star plates 2614 of external tooth sun gear are installed on the lower millstone of grinder, 25 sapphire crystal substrates to be processed are placed in the through hole of wandering star plate;
3) start grinder, add abrasive material and cooling water in the process of lapping, it is the boron carbide of 14-20 millimeter that abrasive material can be selected granularity for use, the rotating speed of lower millstone is 3040 rev/mins (also can not in this scope), shutdown when the thickness of workpiece reaches 0.5 ± 0.01 millimeter of error of institute's required thickness finishes corase grind;
Fine grinding:
4) start grinder, add abrasive material and cooling water in the process of lapping, it is the boron carbide of 7-5 millimeter that abrasive material can be selected granularity for use, the rotating speed of lower millstone is 30-40 rev/min (also can not in this scope), shutdown when the thickness of workpiece reaches 0.46 ± 0.005 millimeter of error of institute's required thickness finishes fine grinding;
Polishing: be that the polyammonium ester membrane of 0.5-1 millimeter sticks on the upper and lower mill surface as the polishing skin with thickness 5), the diameter that polishes skin is identical with mill;
6) ring gear 2612 and 2613, five blocks of wandering star plates 2614 of external tooth sun gear are installed on the lower millstone of grinder, 25 sapphire crystal substrates that fine grinding is good are placed in the through hole of wandering star plate;
7) start grinder, add oxidation silicon polishing liquid in the polishing process, the temperature of polishing fluid is the 32-45 degree, and the rotating speed of lower millstone is 25-50 rev/min (also can not in this scope), and shutdown when total revolution reaches 8000-9000 and changes finishes the whole course of processing.
The present embodiment process can make qualification rate reach more than 98% (to comprise accidental damage), and sapphire substrate leading indicator is roughness (Ra), can obtain roughness less than 0.3 nanometer.
It is abrasive disk that the carbonization emery wheel also can be directly adopted in grinding in this method and fine grinding, and granularity is the W180 granularity, in case and present carborundum emery disc equating, it varies with temperature not quite.And the granularity of W180# silicon carbide grinding wheel dish all is made up of the 60-80 micron, and particle has many micropores each other, and the abrasive material maximum dose of W20-W5 granularity micro powder granule retains on the mill surface like this, and so grinding rate just improves many.
The present embodiment fine grinding stage can be selected W20 for use, W14, and three kinds of boron carbides of W7 are better as grinding-material, and this material hardness is only second to diamond, but its preparation cost is lower, and higher again than the hardness of carborundum and diamond dust, its working (machining) efficiency is also high.
Present embodiment is selected silica solvent and polishing agent for use, its process principle, except that the physical grinding Principle of Grinding and Cutting is arranged, also having chemical polishing mechanism or branch to be similar to ordinary optical ripple glass uses the chemical polishing mechanism of oxide cmp similar, this theory confirms by practical operation, at spindle speed is 25 rev/mins, is worked into to be equivalent to 9000 and to change (about 6 hours) and finish polishing.
4, adopt Polyurethane polishing skin (all available) in the present embodiment both at home and abroad, this polyamine fat dispels the heat as the polishing wave material, grinding, and costs etc. are excellent.
5, for so thin (φ is 50.80, and thick is 0.3-0.4mm) the sapphire substrate of processing, because the principle of expanding with heat and contract with cold, difficulty of processing is very big.Present embodiment adopts the separator principle, gets small size in the large tracts of land.For example in the present embodiment: lathe (mill external diameter) φ 640mm, process substrates is: φ 50.80.The mill flatness is 10/ λ, and workpiece reaches: 0.1/ λ, add automatic adjusting air pressure, and do not heat upper lower burrs, so guaranteed flatness (evenness).
Claims (5)
1, a kind of optical grinding, mainly comprise frame, one worktable panel is installed on the frame, one basin is installed on the workbench, a vertical rotation axle of motor and drive thereof is installed in the frame, this rotation axis passes from the basin bottom, a lower millstone is installed at its top, the support pressure exerting arrangement of upper millstone is installed on the workbench, and with support pressure exerting arrangement and link to each other and place upper millstone on the lower millstone and cooling fluid conveying device; It is characterized in that, said lower millstone by the chassis, be arranged on the ring gear of chassis outer circumference and be arranged on the external tooth sun gear in the center of circle, chassis, wandering star plate more than one is formed, this wandering star plate outer rim has external tooth, and every block of wandering star plate is meshing with each other with the ring gear and the external tooth sun gear of other wandering star plate and outer circumference respectively simultaneously; The height of said ring gear, external tooth sun gear and the wandering star plate all final thickness with workpiece is identical or smaller; Every block of wandering star plate has more than one and the corresponding through hole of workpiece external diameter, and workpiece is placed in one just.
2, optical grinding machine as claimed in claim 1, it is characterized in that, said support pressure exerting arrangement comprises the gas compressor that is installed in the frame, be installed in the stand on the workbench, be installed in the pressure inflator and the upper millstone shift mechanism that link to each other with gas compressor in the stand, and a force pipe, an end of this force pipe is connected with the pressure inflator, and the other end is fixed on upper millstone back side central spot.
3, optical grinding machine as claimed in claim 1 is characterized in that, also is included in to be equipped with on the worktable panel by measuring and regulate tachometer, measurement and regulating the operation instrument that pressure gauge, timer and various control button are formed.
4, a kind of processing semiconductor comprises corase grind, fine grinding and polishing three phases with the method for sapphire crystal substrates, it is characterized in that, concrete procedure of processing is as follows:
Corase grind:
1) paste the identical size of a slice on the surface of the upper and lower mill of optical grinding machine, granularity is the silicon carbide plate of W180;
2) in that intermeshing ring gear, external tooth sun gear, the wandering star plate of the band external tooth that has an above through hole more than one are installed on the lower millstone of grinder, sapphire crystal substrates to be processed is placed in the through hole of wandering star plate;
3) start grinder, add abrasive material and cooling water in the process of lapping, it is the boron carbide of 14-20 millimeter that abrasive material is selected granularity for use, and shutdown when the thickness of workpiece reaches 0.5 ± 0.01 millimeter of error of institute's required thickness finishes corase grind;
Fine grinding:
4) start grinder, add abrasive material and cooling water in the process of lapping, it is the boron carbide of 7-5 millimeter that abrasive material is selected granularity for use, and shutdown when the thickness of workpiece reaches 0.46 ± 0.005 millimeter of error of institute's required thickness finishes fine grinding;
Polishing:
5) be that the polyammonium ester membrane of 0.5-1 millimeter sticks on the upper and lower mill surface as the polishing skin with thickness, diameter and the mill of polishing skin identical;
6) intermeshing ring gear, external tooth sun gear are being installed on the lower millstone of grinder and are being had the wandering star plate that has external tooth of an above through hole more than one, the sapphire crystal substrates that fine grinding is good is placed in the through hole of wandering star plate;
7) start grinder, add oxidation silicon polishing liquid in the polishing process, the temperature of polishing fluid is the 32-45 degree, shuts down when 8000-9000 changes when total revolution reaches, and finishes the whole course of processing.
As the method for processing semiconductor as described in the claim 4, it is characterized in that 5, the upper and lower mill in said corase grind, fine grinding stage adopts silicon carbide grinding wheel with the sapphire crystal substrates.
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| CNB2003101211355A CN1301184C (en) | 2003-12-16 | 2003-12-16 | Optical grinding machine and method for processing sapphire crystal substrate for semiconductor use |
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| CNB2003101211355A CN1301184C (en) | 2003-12-16 | 2003-12-16 | Optical grinding machine and method for processing sapphire crystal substrate for semiconductor use |
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| CN1546283A true CN1546283A (en) | 2004-11-17 |
| CN1301184C CN1301184C (en) | 2007-02-21 |
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Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4869779A (en) * | 1987-07-27 | 1989-09-26 | Acheson Robert E | Hydroplane polishing device and method |
| JP3923107B2 (en) * | 1995-07-03 | 2007-05-30 | 株式会社Ｓｕｍｃｏ | Silicon wafer manufacturing method and apparatus |
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| US6709981B2 (en) * | 2000-08-16 | 2004-03-23 | Memc Electronic Materials, Inc. | Method and apparatus for processing a semiconductor wafer using novel final polishing method |
| US7101799B2 (en) * | 2001-06-19 | 2006-09-05 | Applied Materials, Inc. | Feedforward and feedback control for conditioning of chemical mechanical polishing pad |
| CN1203965C (en) * | 2003-04-25 | 2005-06-01 | 中国科学院上海光学精密机械研究所 | Surface processing method for titanium-doped sapphire crystal laser rod |
-
2003
- 2003-12-16 CN CNB2003101211355A patent/CN1301184C/en not_active Expired - Fee Related
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| CN105619183A (en) * | 2014-12-19 | 2016-06-01 | 南京京晶光电科技有限公司 | System and method for preparing ultrathin sheets from sapphire through grinding machining |
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| CN110313053A (en) * | 2017-02-21 | 2019-10-08 | 福吉米株式会社 | The grinding method of silicon carbide substrate |
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| CN108871892B (en) * | 2018-06-04 | 2020-12-08 | 中钢集团新型材料（浙江）有限公司 | Sample preparation method for graphite optical microstructure characterization |
| CN111546136A (en) * | 2020-04-30 | 2020-08-18 | 济南晶正电子科技有限公司 | Method for polishing end face of wafer without cleavage face |
| CN111515850A (en) * | 2020-05-08 | 2020-08-11 | 深圳市晶龙达光学实业有限公司 | Lens thickness processing system and processing technology thereof |
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