CN100392818C - Method for processing chip capable of improving semiconductor chip geometric parameter - Google Patents
Method for processing chip capable of improving semiconductor chip geometric parameter Download PDFInfo
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- CN100392818C CN100392818C CNB2004100968428A CN200410096842A CN100392818C CN 100392818 C CN100392818 C CN 100392818C CN B2004100968428 A CNB2004100968428 A CN B2004100968428A CN 200410096842 A CN200410096842 A CN 200410096842A CN 100392818 C CN100392818 C CN 100392818C
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- wafer
- thickness
- wandering star
- star sheet
- grinding
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Abstract
The present invention discloses a wafer processing method capable of improving geometric parameters of semiconductor chips. The method uses at least two groups of planetary wafers, the thickness of which is reduced gradually for grinding a wafer which is to be processed in gradation. In each grinding process, after the thickness of the wafer is equal to that of each of the planetary wafers, the grinding process is continued for an additional grinding time. Usually, the thickness difference of the two groups of planetary wafers, the thickness of which is adjacent is from 5 to 30 micrometers; the additional grinding time can be selected within the range of one to thirty minutes. When the planetary wafers are replaced, the turnover face of the wafer can make grinding efficiency become better. When wafers are processed by the method, the thickness deviation and the flatness of the wafers can be effectively improved; besides, the bending and warping parameters of the wafers can also be improved.
Description
Technical field
The invention belongs to semiconductor wafer technology field, particularly a kind of Ginding process that can improve the wafer geometric parameter.This method is applicable to the grinding of all semi-conducting materials and all sheetings.
Background technology
The semiconductor wafer that integrated circuit uses all is to be made by the semiconductor billet cutting processing.When with inner circle cutting machine or wire cutting machine semiconductor billet being cut into cut crystal, because of the variation of cutting condition, all there is deviation in cutting blade at thickness and evenness.If the cutting condition is improper, also can cause darker affected layer.Therefore need eliminate the deviation of thickness and evenness with grinding, and reduce damage layer thickness.
Traditional Ginding process as shown in Figure 1, wafer 1 is placed on the film perforation of the wandering star sheet 2 that is positioned on the lower wall 3, wafer thickness is greater than the thickness of wandering star sheet.Last dish 4 is fallen, and contacts with wafer, and the slurry that is mixed with abrasive material enters from the gap between upper lower burrs, by the grinding of abrasive material, removes the affected layer of wafer surface, and the chip under grinding is then taken away by slurry.
The tradition grinding can reduce damage layer thickness, improve the thickness deviation (TTV) between the wafer and the evenness (TIR) of wafer, but traditional grinding technics is very little to wafer bending degree (Bow) and the isoparametric improvement of angularity (Warp).Adopt traditional Ginding process to grind 12 wafer, the geometric parameter that records each wafer 1 (" before " is the abbreviation of " before the grinding " in the table, and " afterwards " is the abbreviation of " after the grinding ") of seeing the following form:
Table 1
Summary of the invention
The purpose of this invention is to provide a kind of processing method that in process of lapping, can improve the semiconductor wafer geometric parameter.Adopt this method processed wafer, not only can improve TTV, the TIR parameter of wafer effectively, can also improve Warp, the Bow parameter of wafer.
The objective of the invention is to be achieved by following technical proposals: the wandering star sheet of employing at least two group thickness-tapereds is treated processed wafer and is carried out the gradation grinding; In each process of lapping,, can be described as " additional milling time " during this period of time after equating with wandering star sheet thickness in that wafer grinding is continued to grind a period of time.
Usually, the thickness difference of two groups of wandering star sheets that thickness is adjacent is between 5～30 microns; Additional milling time can be selected in the scope at 1～30 minute.When changing the wandering star sheet, can make grinding effect better the wafer turn-over.
The concrete steps of wafer processing method of the present invention can be expressed as follows:
(1) measures wafer original depth T
0, determine that according to its difference the group of the wandering star sheet selected for use is counted N with final required thickness, generally between 5～30 microns, N is the integer more than or equal to 2 to the thickness difference of two groups of wandering star sheets that thickness is adjacent;
(2) be T with thickness
1(near T
0) the first wandering star sheet is placed on the twin grinder, the film perforation of again wafer being put into the first wandering star sheet grinds, and milling time is t
1+ t
01T wherein
1For wafer grinding is arrived and the first wandering star sheet thickness T
1Time when equating, t
01Be the first additional milling time, generally in 1～30 minute scope;
(3) take off the wafer and the first wandering star sheet, (thickness is less than T to change next shelves
1But near T
1) thickness is T
2The second wandering star sheet, and will put into behind the wafer turn-over film perforation of the second wandering star sheet continue to grind, milling time is t
2+ t
02, t wherein
2For wafer grinding is arrived and the second wandering star sheet thickness T
2Time when equating, t
02Be the second additional milling time, generally in 1～30 minute scope;
(4) repeating above-mentioned steps, is T until changing thickness
NThe N wandering star sheet of (consistent with final required thickness), the film perforation of wafer being put into N wandering star sheet continues to grind, and grinds t
N+ t
0NTime, wherein t
NFor wafer grinding is arrived and N wandering star sheet thickness T
NTime when equating, t
0NBe the additional milling time of N, generally in 1～30 minute scope.
The present invention has following beneficial effect:
1, owing to added additional milling time, wafer can be ground under free state, therefore adopt the inventive method processed wafer not only can improve TTV, the TIR parameter of wafer effectively, can also improve the parameters such as Warp, Bow of wafer, this is that common process institute is inaccessiable.
2, the present invention adopts many group wandering star sheets that wafer is carried out the gradation grinding.Owing to be subjected to the assurance of wandering star sheet thickness, the wafer that uses the inventive method to grind out can guarantee consistent with the final thickness that requires, and the phenomenon of wear down can not occur.
The present invention is described further below in conjunction with accompanying drawing and specific embodiment.
Description of drawings
Fig. 1 is the schematic top plan view of twin grinder.
Fig. 2 is the vertical face cutaway view of twin grinder.
Fig. 3 is a wafer state schematic diagram in traditional process of lapping.
Fig. 4 is wafer state schematic diagram in the process of lapping of the present invention.
Among the figure, 1 is wafer, and 2 is the wandering star sheet, and 3 is lower wall, and 4 is last dish.
Embodiment
Fig. 3 is a wafer state schematic diagram in traditional process of lapping.Wherein, a is the free state schematic diagram of wafer in the film perforation of wandering star sheet before the processing, and b goes up the schematic diagram after dish compresses wafer for processing is preceding, and wafer because of pressurized deformation takes place; C is the schematic diagram when dish compresses wafer on the completion of processing, and d is the free state schematic diagram of processing back wafer in the film perforation of wandering star sheet, and the wafer leveling degree has improved, but parameters such as Warp, Bow can not get improving.The solution that the present invention proposes at this problem just.Since the mode that has adopted gradation to grind, and increased additional milling time, and the part stress of wafer has obtained good release, therefore parameters such as Warp, Bow are improved, as shown in Figure 4, n is after grinding through N time, the free state schematic diagram of wafer in the film perforation of wandering star sheet.Below by specific embodiment the present invention is illustrated.
First embodiment: grind 6 inches gallium arsenide wafers, cutting blade thickness is 700 microns, and it is 650 microns that final thickness requires.
The wafer original depth is 50 microns with the gap of final required thickness, and therefore can select thickness difference is five grades of wandering star sheets of 10 microns, and promptly the group of wandering star sheet is counted N and equaled 5.
The selection grinding pressure is 20g/cm
2, grinding rate is 6 μ m/min, grinds by following step then:
1, selecting thickness is 690 microns the first wandering star sheet, this wandering star sheet and wafer is placed on the grinder grinds, and treats that wafer thickness is ground to the first wandering star sheet thickness to equate to continue grinding 10 minutes again in back (approximately needing 1 minute and 40 seconds);
2, take off the wafer and the first wandering star sheet, change thickness and be 680 microns the second wandering star sheet, the film perforation that the wafer turn-over is put into the second wandering star sheet continue to grind, and treats that wafer thickness is ground to the second wandering star sheet thickness to equate to continue grinding 10 minutes again in back (approximately needing 1 minute and 40 seconds);
3, repeat above-mentioned steps, until changing thickness is 650 microns the 5th wandering star sheet, the film perforation that the wafer turn-over is put into the 5th wandering star sheet continue to grind, and treats that wafer thickness is ground to the 5th wandering star sheet thickness to equate to continue grinding 10 minutes again in back (approximately needing 1 minute and 40 seconds).
After having ground 6 sample wafer according to above-mentioned steps, measure the wafer geometric parameter, result such as following table 2 (" before " is the abbreviation of " before the grinding " in the table, and " afterwards " is the abbreviation of " after the grinding ").
Table 2
As can be seen from Table 2, the wafer that adopts the inventive method to process, not only its TTV, TIR parameter have obtained effective improvement, and its Warp, Bow parameter have also obtained remarkable improvement, and this is that common process institute is inaccessiable.Owing to be subjected to the assurance of wandering star sheet thickness, the wafer that uses the inventive method to grind out can guarantee consistent with the final thickness that requires, and the phenomenon of wear down can not occur.
Second embodiment: grind 4 inches silicon wafers, cutting blade thickness is 620 microns, and it is 560 microns that final thickness requires.
The wafer original depth is 60 microns with the gap of final required thickness, and therefore can select thickness difference is 20 microns third gear wandering star sheet, and promptly the group of wandering star sheet is counted N and equaled 3.
The selection grinding pressure is 60g/cm
2, grinding rate is 4 μ m/min, grinds by following step then:
1, selecting thickness is 600 microns the first wandering star sheet, the first wandering star sheet and wafer is placed on the grinder grinds, and treats that wafer thickness is ground to the first wandering star sheet thickness to equate to continue grinding 5 minutes again in back (approximately needing 5 minutes);
2, take off the wafer and the first wandering star sheet, change thickness and be 580 microns the second wandering star sheet, the film perforation that the wafer turn-over is put into the second wandering star sheet continue to grind, and treats that wafer thickness is ground to the second wandering star sheet thickness to equate to continue grinding 10 minutes again in back (approximately needing 5 minutes);
3, take off the wafer and the second wandering star sheet, change thickness and be 560 microns the 3rd wandering star sheet, the film perforation that the wafer turn-over is put into the 3rd wandering star sheet continue to grind, and treats that wafer thickness is ground to the 3rd wandering star sheet thickness to equate to continue grinding 15 minutes again in back (approximately needing 5 minutes).
After having ground 12 sample wafer according to above-mentioned steps, measure the wafer geometric parameter, result such as following table 3 (" before " is the abbreviation of " before the grinding " in the table, and " afterwards " is the abbreviation of " after the grinding ").
Table 3
As can be seen from Table 3, the wafer that adopts the inventive method to process, not only its TTV, TIR parameter have obtained effective improvement, and its Warp, Bow parameter have also obtained remarkable improvement, and this is that common process institute is inaccessiable.Owing to be subjected to the assurance of wandering star sheet thickness, the wafer that uses the inventive method to grind out can guarantee consistent with the final thickness that requires, and the phenomenon of wear down can not occur.
Though the present invention is illustrated with the above embodiments; but the present invention is not limited to these embodiment; after every those skilled in the art has seen specification of the present invention; thinkable any deformation program of the present invention; comprise change of wandering star sheet thickness difference, additional milling time or the like, all should regard as within protection scope of the present invention.
Claims (5)
1. the wafer processing method that can improve the semiconductor wafer geometric parameter is characterized in that, the wandering star sheet of employing at least two group thickness-tapereds is treated processed wafer and carried out the gradation grinding; In each process of lapping, wafer grinding is being continued to grind one section additional milling time after equating with wandering star sheet thickness;
Described wafer processing method specifically may further comprise the steps:
(1) measures wafer original depth T
0, determining that according to its difference the group of the wandering star sheet selected for use is counted N with final required thickness, N is the integer more than or equal to 2;
(2) be T with thickness
1, near thickness T
0The first wandering star sheet be placed on the twin grinder, the film perforation of again wafer being put into the first wandering star sheet grinds, milling time is t
1+ t
01, t wherein
1For wafer grinding is arrived and the first wandering star sheet thickness T
1Time when equating, t
01It is the first additional milling time;
(3) take off the wafer and the first wandering star sheet, changing next grade thickness is T
2The second wandering star sheet, the film perforation of wafer being put into the second wandering star sheet continue to grind, milling time is t
2+ t
02, t wherein
2For wafer grinding is arrived and the second wandering star sheet thickness T
2Time when equating, t
02It is the second additional milling time;
(4) repeat above-mentioned steps,, thickness consistent with final required thickness until changing is T
NN wandering star sheet, the film perforation of wafer being put into N wandering star sheet continue to grind, and grinds t
N+ t
0NTime, wherein t
NFor wafer grinding is arrived and N wandering star sheet thickness T
NTime when equating, t
0NIt is the additional milling time of N.
2. wafer processing method according to claim 1 is characterized in that, the thickness difference of two groups of wandering star sheets that thickness is adjacent is between 5～30 microns; The additional milling time of first additional milling time to the N was all selected in the scope at 1～30 minute.
3. wafer processing method according to claim 1 and 2 is characterized in that, when being reentered into wafer behind each replacing wandering star sheet, will put into the film perforation of wandering star sheet behind the wafer turn-over again.
4. wafer processing method according to claim 3 is characterized in that, the group of wandering star sheet is counted N and equaled 5, the first additional milling times to the five additional milling times and be 10 minutes.
5. wafer processing method according to claim 3 is characterized in that, the group of wandering star sheet count N equal 3, the first additional milling times to the three additional milling times be 5 minutes, 10 minutes or 15 minutes.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2004100968428A CN100392818C (en) | 2004-12-08 | 2004-12-08 | Method for processing chip capable of improving semiconductor chip geometric parameter |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2004100968428A CN100392818C (en) | 2004-12-08 | 2004-12-08 | Method for processing chip capable of improving semiconductor chip geometric parameter |
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| Publication Number | Publication Date |
|---|---|
| CN1787181A CN1787181A (en) | 2006-06-14 |
| CN100392818C true CN100392818C (en) | 2008-06-04 |
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| CNB2004100968428A Expired - Fee Related CN100392818C (en) | 2004-12-08 | 2004-12-08 | Method for processing chip capable of improving semiconductor chip geometric parameter |
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Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102172861A (en) * | 2010-12-31 | 2011-09-07 | 苏州普锐晶科技有限公司 | High-speed chamfer machining method for small frequency chip |
| JP6323515B2 (en) * | 2016-08-31 | 2018-05-16 | 株式会社Sumco | Semiconductor wafer wrapping method and semiconductor wafer |
| CN110722692B (en) * | 2019-10-12 | 2021-09-07 | 江苏澳洋顺昌集成电路股份有限公司 | Method for controlling machining of BOW value of ground product |
| CN113199392A (en) * | 2021-04-12 | 2021-08-03 | 中环领先半导体材料有限公司 | Machining process for improving parameters of 8-inch grinding disc |
| TWI786672B (en) * | 2021-06-09 | 2022-12-11 | 環球晶圓股份有限公司 | Method of wafer grinding |
| CN116175397A (en) * | 2022-12-13 | 2023-05-30 | 西安奕斯伟材料科技有限公司 | Device and method for grinding silicon wafer |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000091282A (en) * | 1998-09-10 | 2000-03-31 | Mitsubishi Materials Silicon Corp | Manufacture of high flatness wafer |
| CN2451289Y (en) * | 2000-09-30 | 2001-10-03 | 谭洪斌 | Dressing device for abrasive disc surface of surface processing equipment |
| CN1480992A (en) * | 2002-09-06 | 2004-03-10 | 大连淡宁实业发展有限公司 | Technique for precision finishing two side of plane wafer in large size |
| CN2640700Y (en) * | 2003-07-16 | 2004-09-15 | 上海新华霞实业有限公司 | Double-side grinding precision grinding equipment |
| CN1546283A (en) * | 2003-12-16 | 2004-11-17 | 汪开庆 | Optical grinding machine and method for processing sapphire crystal substrate for semiconductor use |
-
2004
- 2004-12-08 CN CNB2004100968428A patent/CN100392818C/en not_active Expired - Fee Related
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000091282A (en) * | 1998-09-10 | 2000-03-31 | Mitsubishi Materials Silicon Corp | Manufacture of high flatness wafer |
| CN2451289Y (en) * | 2000-09-30 | 2001-10-03 | 谭洪斌 | Dressing device for abrasive disc surface of surface processing equipment |
| CN1480992A (en) * | 2002-09-06 | 2004-03-10 | 大连淡宁实业发展有限公司 | Technique for precision finishing two side of plane wafer in large size |
| CN2640700Y (en) * | 2003-07-16 | 2004-09-15 | 上海新华霞实业有限公司 | Double-side grinding precision grinding equipment |
| CN1546283A (en) * | 2003-12-16 | 2004-11-17 | 汪开庆 | Optical grinding machine and method for processing sapphire crystal substrate for semiconductor use |
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| CN1787181A (en) | 2006-06-14 |
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| PB01 | Publication | ||
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| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| EE01 | Entry into force of recordation of patent licensing contract |
Assignee: Tianjin Newtop Electronic Technology Co., Ltd. Assignor: China Electronics Science & Technology Group The 46th Institute Contract fulfillment period: 2008.7.8 to 2016.7.7 contract change Contract record no.: 2009120000040 Denomination of invention: Method for processing chip capable of improving semiconductor chip geometric parameter Granted publication date: 20080604 License type: Exclusive license Record date: 2009.5.6 |
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| LIC | Patent licence contract for exploitation submitted for record |
Free format text: EXCLUSIVE LICENSE; TIME LIMIT OF IMPLEMENTING CONTACT: 2008.7.8 TO 2016.7.7; CHANGE OF CONTRACT Name of requester: TIANJIN CITY XINLING ELECTRON TECHNOLOGY CO., LTD. Effective date: 20090506 |
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Granted publication date: 20080604 Termination date: 20101208 |