CN101450512A - Chemical mechanical polishing method and special device and preparation method of the special device - Google Patents
Chemical mechanical polishing method and special device and preparation method of the special device Download PDFInfo
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- CN101450512A CN101450512A CNA2007101715694A CN200710171569A CN101450512A CN 101450512 A CN101450512 A CN 101450512A CN A2007101715694 A CNA2007101715694 A CN A2007101715694A CN 200710171569 A CN200710171569 A CN 200710171569A CN 101450512 A CN101450512 A CN 101450512A
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Abstract
The invention discloses a chemical mechanical polishing method. The method can be used to cut a wafer into small pieces of wafers so as to carry out chemical mechanical polishing. The invention also discloses special equipment for realizing the method and a method for converting the prior chemical mechanical polishing equipment into the special equipment. The chemical mechanical polishing method adopts square wafer pieces to replace the prior entire round wafer so as to carry out chemical mechanical polishing, thereby greatly reducing the costs of experiment equipment and consumables, saving time and improving efficiency; therefore, the chemical mechanical polishing method provides a more flexible method with lower cost for wafer polishing process in the semiconductor industry, the research and development of products such as a polishing solution and a polishing pad as well as a chemical mechanical polishing material, equipment and process authentication.
Description
Technical field
The present invention relates to a kind of cmp method and special equipment thereof and this equipment preparation method.
Background technology
Chemically mechanical polishing is extensively applied in the current wafer manufacture process, wherein employed various consumptive materials, and as polishing slurries, polishing pad etc. play crucial effects to the quality and the effect of chemically mechanical polishing.The continuous research and development of all consumptive material suppliers more meet novel consumptive materials such as novel polishing slurries that modern wafer manufacturing and chemically mechanical polishing quality, output requires, polishing pad.Simultaneously, whether be provided with rationally and optimize, all need carry out a large amount of chemically mechanical polishing experiments to obtain data in order to prove relevant properties of product, technological parameter.
In the CMP process of main flow, institute's polissoir of using is based on Material Used AMAT and weak former precision optical machinery Ebara, and they are the main suppliers of polishing wafer equipment more than 6 inches.The polissoir of wafer below 6 inches then has many other suppliers, is purpose with the experiment research and development much wherein.Though more than all polissoir wafer size sizes, its common ground be at wafer all be circular, and stock removal polishing will consume the whole piece wafer.
Obviously, above-mentioned cmp method is constantly adjusted prescription for needs, continues to optimize technological parameter, constantly changes the chemically mechanical polishing material of consumptive material or spare part, the research and development of technology, and cost is very high.Except needs had a chemical-mechanical polisher, the wafer number of the required consumption of routine experimentation accounted for the overwhelming majority of total R﹠D costs.
Summary of the invention
Technical problem to be solved by this invention is the research and development that are used for product and technology for the cmp method that overcomes prior art, defect of high cost, and a kind of cmp method and special equipment and this equipment preparation method who is suitable for the research and development of product and technology is provided.
Cmp method of the present invention carries out chemically mechanical polishing for wafer is cut into the fritter wafer.What described fritter wafer was preferable is square fritter wafer.
Wherein, the big I of wafer cutting is decided with concrete the use according to used wafer size, as cutting into the square fritter that 5mm x 5mm to 212mm x 212mm (corresponding 12 inches circular wafers) differs in size.
The method of wafer cutting can adopt the special-purpose dicing saws of band diamond blade or laser aid to carry out.As not high to required precision, also can adopt the easy wafer lattice physical characteristic of utilizing, use band Buddha's warrior attendant head, diamond head or other to have the cutter of the cutter head of the enough hardness of cutting crystal wafer, manually circular wafers is cut.Manually cutting can be satisfied the cutting demand under the general precision requirement.
In the preferred embodiments of the present invention, manually the concrete steps of cutting are as follows:
(1) as shown in Figure 1, use cutter to cut out a little openning over against the center of circle, be called the A point, utilize the physical characteristic (lattice) of wafer substrate-silicon, hold A point both sides and break off with the fingers and thumb and split circular wafers and become 2 Office semicircle wafer, as Fig. 2 at the edge line place of circular wafers;
(2) as Fig. 2, the place cuts out a little openning over against the center of circle in the middle of semicircle crystal round fringes line, is called the B point, holds B point both sides and breaks off with the fingers and thumb and split the wafer that semicircle wafer becomes 2 Office, 1/4 circle, as Fig. 3;
(3) as Fig. 3, from the center of circle of the wafer of 1/4 circle, measure required square wafer fritter length X on one side along radius edge, put vertical half of edge with this and cut a little openning, be called the C point, hold C point both sides and break off with the fingers and thumb and split semicircle wafer and become 2 Office; The part that to be left with the method is broken off with the fingers and thumb and is cleaved into the rectangular wafer that has length X on one side, as Fig. 4;
(4) as Fig. 4, be the length Y that required square wafer fritter another side is measured on the summit on one side of X along length, cut out a little openning with this vertical edge, be called the D point, hold D point both sides and break off with the fingers and thumb and split rectangular wafer and become 2 Office.With the method, the part of being left can be broken off with the fingers and thumb and be cleaved into the square fritter wafer that the length of side is X and Y, as Fig. 5.
Use the method, can cut out several square wafer fritters from a monoblock circular wafers, the quantity of this square wafer fritter depend on required wafer fritter size (X, Y) and the size of circular wafers.Size with required wafer fritter is 40mm x 40mm and uses 8 inches (200mm) circular wafers to be example, can cut out 12 complete square wafer fritters and 2 fritters that contain crystal round fringes (inactive area) part.
The common step of cmp method of the present invention is as follows:
(1) wafer is cut into fritter after, spill deionized water at the back side of wafer fritter (the not face that need polish).
(2) square wafer fritter is positioned in the square clasp on the rubbing head, the back side is towards rubbing head; Preferable mode is with tweezers, vacuum WAND or directly uses hand (wearing corresponding gloves).
(3) the square wafer fritter of flicking makes square wafer fritter adhere to by the tension force and the rubbing head of water, and guarantees that square clasp stops moving of wafer fritter.
(4) following action is identical with existing circular wafers chemically mechanical polishing: open the polishing fluid supply, unlatching rubbing head and polishing disk rotation are fallen and the supercharging rubbing head contacts with polishing pad, carry out chemically mechanical polishing.After chemically mechanical polishing is finished, only need to use tweezers that square wafer fritter is taken out and get final product from square clasp, loading, unloading are all very convenient.
The cmp method of wafer fritter cmp method most of and circular wafers is similar, and difference is as follows:
(1) because wafer fritter area less than the circular wafers area, for example the square wafer fritter of 20mm x 20mm can adopt tweezers, vacuum WAND or directly use hand (wearing corresponding gloves) to place on rubbing head or take out, and need not other handling facilities supports.
(2) because wafer fritter area less than the circular wafers area, can utilize the tension force of water that the wafer fritter is sticked on the rubbing head, and stop that by clasp it moves, the location of easier realization wafer fritter, than usual method, need not to use as vacuum suction, tentacle such as compresses at method, has simplified the control parameter.
The present invention also further relates to the special equipment of realizing cmp method of the present invention, and each length of side center outwards increases by the shape of 1～2mm again in the shape that is shaped as described fritter crystal round fringes of the clasp inboard on the rubbing head of this equipment from the distance at rubbing head center.Equipment of the present invention can be transformed and be made by existing polissoir, to realize chemically mechanical polishing to the wafer fritter, method is: the circular wafers clasp on the rubbing head on the existing chemical-mechanical polisher is removed, with the rubbing head is the center, an aforementioned described clasp is set gets final product.
Fig. 6 is typical chemically mechanical polishing schematic diagram, and polishing fluid is dripped on the polishing pad, and circular wafers is buckled on the rubbing head, and under be pressed on the polishing pad, by rubbing head and polishing pad in the same way or counter motion, and under certain downforce, wafer is carried out the chemically mechanical polishing action.Fig. 7 is the rubbing head schematic diagram (with the contact-making surface of polishing pad) in the existing polissoir, and circular wafers is placed on rest area, and is controlled on the rubbing head by the wafer clasp.
Fig. 8 is the rubbing head schematic diagram (with the contact-making surface of polishing pad) in the polissoir after improving in the present invention's one preferred embodiments, the center of circle with rubbing head is the center, use the consistent material of clasp on the rubbing head with existing polishing circular wafers (as PFA, stainless steel etc.) width of making is U, total height is the clasp of W+V, can place the length of side in the clasp and be respectively the square wafer fritter that is of a size of X+2mm and Y+2mm, the height of the outstanding rubbing head of this clasp is W, the numerical value of W is less than or equal to the fritter wafer thickness of being polished, and (wafer thickness is 7mm usually, then W is less than or equal to 7mm), the thickness of preferable is 1/3 fritter wafer.V is the degree of depth of going deep into the rubbing head trench portions.This equipment can make (referring to Fig. 9) by following method:
The center of circle with rubbing head is the center, the long X+2mm of being that draws, and wide is the right angle four limit types of Y+2mm, from then on the tetragonal four edges in right angle is outwards widened U respectively, another right angle four limit types that draw in two right angle quadrangle institute area surrounded, inwardly dig the groove of dark V.Use the material consistent with the circular wafers clasp to make one and can embed this groove, width is U, and the part of outstanding groove highly is W, and total height is the square wafer fritter clasp of W+V, referring to Figure 10.Can use materials such as super glue that this clasp and rubbing head are cemented leans on.Then this clasp is carried out plane polishing, smooth to realize the plane.The numerical value of W is less than or equal to wafer thickness, and preferable is 1/3rd of wafer thickness.So far, the transformation of chemical-mechanical polisher rubbing head is finished.
The method for measuring thickness of square wafer fritter is: as shown in figure 11, the thickness measure of square wafer fritter is outward extending with fritter central point A, and the position of putting B, C, D and E usually can be chosen in central point outward, in the zone of 2/3 area of whole fritter.
Agents useful for same of the present invention and raw material are all commercially available to be got.
Positive progressive effect of the present invention is: cmp method of the present invention uses the traditional monoblock circular wafers of square wafer fritter replacement to carry out chemically mechanical polishing, greatly reduce the cost of experimental facilities and consumptive material, and save time, improved efficient, research and development for products such as semi-conductor industry polishing wafer technology and polishing fluid, polishing pads, and chemically mechanical polishing material, equipment, technology authentication provide a method more flexible, that cost is lower.
Description of drawings
Fig. 1 is wafer cutting first step schematic diagram.
Fig. 2 is second step of wafer cutting schematic diagram.
Fig. 3 cuts the 3rd step schematic diagram for wafer.
Fig. 4 cuts the 4th step schematic diagram for wafer.
Fig. 5 is the square wafer schematic diagram of wafer cutting back gained.
Fig. 6 is existing chemical-mechanical polisher schematic diagram.
Fig. 7 is the schematic diagram of rubbing head in the existing chemical-mechanical polisher.
Fig. 8 is the schematic diagram of rubbing head in the chemical-mechanical polisher of the present invention.
Fig. 9 is a rubbing head schematic diagram in the chemical-mechanical polisher of the present invention.
Figure 10 is the schematic diagram of square wafer fritter clasp on the rubbing head in the chemical-mechanical polisher of the present invention.
Figure 11 is the schematic diagram of square wafer fritter film thickness test point.
Figure 12 uses different polishing fluids identical material to be carried out the comparison diagram of the removal speed of chemically mechanical polishing for the method that effect embodiment adopts prior art (Mirra) and the present invention (PM5).
Figure 13 uses the comparison diagram that identical material is carried out the removal speed of chemically mechanical polishing with a kind of polishing fluid for the method that effect embodiment adopts prior art (Mirra) and the present invention (PM5).
Figure 14 is the schematic diagram of embodiment 7 wafers cutting.
The specific embodiment
Mode below by embodiment further specifies the present invention, but does not therefore limit the present invention among the described scope of embodiments.
The cutting of embodiment 1 wafer
(1) uses the cutter of band Buddha's warrior attendant head to cut out a little openning over against the center of circle, be called the A point, hold A point both sides and break off with the fingers and thumb and split circular wafers and become 2 Office semicircle wafer at the edge line place of 8 inches (200mm) TEOS circular wafers;
(2) place in the middle of semicircle crystal round fringes line cuts out a little openning over against the center of circle, is called the B point, holds B point both sides and breaks off with the fingers and thumb and split the wafer that semicircle wafer becomes 2 Office, 1/4 circle;
(3) from the center of circle of the wafer of 1/4 circle, measure required square wafer fritter length 40mm on one side, put vertical radius edge with this and cut a little openning, be called the C point, hold C point both sides and break off with the fingers and thumb and split semicircle wafer and become 2 Office along radius edge; The part that to be left with the method is broken off with the fingers and thumb and is cleaved into the rectangular wafer that has length 40mm on one side;
(4) be the length 40mm that required square wafer fritter another side is measured on the summit on one side of 40mm along length, cut out a little openning, be called the D point, hold D point both sides and break off with the fingers and thumb and split rectangular wafer and become 2 Office with this vertical edge; Break the square fritter wafer that is cleaved into 40mm x 40mm off with the fingers and thumb with the part that the method will be left.
The manufacturing of the special equipment of embodiment 2 embodiment 3
Circular wafers clasp on the rubbing head on the existing chemical-mechanical polisher Logitech PM5 polishing machine is removed, the center of circle with rubbing head is the center, the length of side of drawing is respectively the right angle quadrangle of 41mm and 41mm, from then on the tetragonal four edges in right angle is outwards widened 7mm respectively, another right angle four limit types draw, in two right angle quadrangle institute area surrounded, in rubbing head, dig the groove of dark 2mm, make one and can embed this groove, width is 7mm, the part of outstanding groove highly is 3mm, and total height is the square wafer fritter clasp of 5mm, clasp is embedded in the groove and with rubbing head cement.Wafer thickness is 7mm.
Embodiment 3 chemically mechanical polishings
Instrument: embodiment 2 prepared special equipments
Polishing fluid: Anji TCU2000-B polishing fluid
70 rev/mins of polishing disk rotating speeds, 90 rev/mins of rubbing head rotating speeds, polishing fluid flow velocity 100m1/ minute, polishing pad Rodel Politex PEG pad, downforce 2psi.
(1) deionized water is spilt at the back side (the not face that need polish) of the wafer fritter of embodiment 1 gained;
(2) with tweezers the wafer fritter is positioned in the clasp on the rubbing head, the back side is towards rubbing head;
(3) flicking wafer fritter makes the wafer fritter adhere to by the tension force and the rubbing head of water, and guarantees that clasp stops moving of wafer fritter;
(4) open the polishing fluid supply, open the rotation of rubbing head and polishing disk, fall and the supercharging rubbing head contacts with polishing pad, carry out chemically mechanical polishing, after finishing, the wafer fritter taken out from square clasp get final product.
The cutting of embodiment 4 wafers
(1) uses the cutter of band diamond head to cut out a little openning over against the center of circle, be called the A point, hold A point both sides and break off with the fingers and thumb and split circular wafers and become 2 Office semicircle wafer at the edge line place of 8 inches (200mm) TEOS circular wafers;
(2) place in the middle of semicircle crystal round fringes line cuts out a little openning over against the center of circle, is called the B point, holds B point both sides and breaks off with the fingers and thumb and split the wafer that semicircle wafer becomes 2 Office, 1/4 circle;
(3) from the center of circle of the wafer of 1/4 circle, measure required square wafer fritter length 5mm on one side, put vertical half of edge with this and cut a little openning, be called the C point, hold C point both sides and break off with the fingers and thumb and split semicircle wafer and become 2 Office along radius edge; The part that to be left with the method is broken off with the fingers and thumb and is cleaved into the rectangular wafer that has length 5mm on one side;
(4) be the length 5mm that required square wafer fritter another side is measured on the summit on one side of 5mm along length, cut out a little openning, be called the D point, hold D point both sides and break off with the fingers and thumb and split rectangular wafer and become 2 Office with this vertical edge; Break the square fritter wafer that is cleaved into 5mm x 5mm off with the fingers and thumb with the part that the method will be left.
The manufacturing of the special equipment of embodiment 5 embodiment 6
Circular wafers clasp on the rubbing head on the existing chemical-mechanical polisher Logitech PM5 polishing machine is removed, the center of circle with rubbing head is the center, the length of side of drawing is respectively the right angle quadrangle of 7mm and 7mm, from then on the tetragonal four edges in right angle is outwards widened 1mm respectively, another right angle four limit types draw, in two right angle quadrangle institute area surrounded, in rubbing head, dig the groove of dark 6mm, make one and can embed this groove, width is 1mm, the part of outstanding groove highly is 3mm, and total height is the square wafer fritter clasp of 9mm, clasp is embedded in the groove and with rubbing head cement.Wafer thickness is 7mm.
Embodiment 6 chemically mechanical polishings
Instrument: embodiment 5 prepared special equipments
Polishing fluid: Anji TCU2000-B polishing fluid
70 rev/mins of polishing disk rotating speeds, 90 rev/mins of rubbing head rotating speeds, polishing fluid flow velocity 100m1/ minute, polishing pad Rodel Politex PEG pad, downforce 2psi.
(1) deionized water is spilt at the back side (the not face that need polish) of the wafer fritter of embodiment 4 gained;
(2) with vacuum WAND the wafer fritter is positioned in the clasp on the rubbing head, the back side is towards rubbing head;
(3) flicking wafer fritter makes the wafer fritter adhere to by the tension force and the rubbing head of water, and guarantees that clasp stops moving of wafer fritter;
(4) open the polishing fluid supply, open the rotation of rubbing head and polishing disk, fall and the supercharging rubbing head contacts with polishing pad, carry out chemically mechanical polishing, after finishing, the wafer fritter taken out from square clasp get final product.
The cutting of embodiment 7 wafers
At two ends by the straight line in the center of circle of 12 inches (300mm) TEOS circular wafers, respectively measure from center of circle 106mm, be decided to be an E, F.By the center of circle, and, respectively measure distance, be decided to be a G, H from center of circle 106mm perpendicular to the two ends of the straight line of line segment E, F.As Figure 14, do the parallel lines of line segment GH by E, F, the some I, J, K, the L that intersect with the circular wafers edge.Use the cutter of band diamond head on these 4 points, to cut out an openning respectively, hold the each point both sides successively and break off with the fingers and thumb and split wafer, promptly form the square wafer fritter of a 212mmx212mm.
The manufacturing of the special equipment of embodiment 8 embodiment 9
Circular wafers clasp on the rubbing head on the existing chemical-mechanical polisher Logitech PM5 polishing machine is removed, the center of circle with rubbing head is the center, the length of side of drawing is respectively the right angle quadrangle of 213.5mm and 213.5mm, from then on the tetragonal four edges in right angle is outwards widened 25mm respectively, another right angle four limit types draw, in two right angle quadrangle institute area surrounded, in rubbing head, dig the groove of dark 6mm, make one and can embed this groove, width is 25mm, the part of outstanding groove highly is 5mm, and total height is the square wafer fritter clasp of 11mm, clasp is embedded in the groove and with rubbing head cement.Wafer thickness is 7mm.
Embodiment 9 chemically mechanical polishings
Instrument: embodiment 8 prepared special equipments
Polishing fluid: Anji TCU2000-B polishing fluid
70 rev/mins of polishing disk rotating speeds, 90 rev/mins of rubbing head rotating speeds, polishing fluid flow velocity 100ml/ minute, polishing pad Rodel Politex PEG pad, downforce 2psi.
(1) deionized water is spilt at the back side (the not face that need polish) of the wafer fritter of embodiment 7 gained;
(2) with hand the wafer fritter is positioned in the clasp on the rubbing head, the back side is towards rubbing head;
(3) flicking wafer fritter makes the wafer fritter adhere to by the tension force and the rubbing head of water, and guarantees that clasp stops moving of wafer fritter;
(4) open the polishing fluid supply, open the rotation of rubbing head and polishing disk, fall and the supercharging rubbing head contacts with polishing pad, carry out chemically mechanical polishing, after finishing, the wafer fritter taken out from square clasp get final product.
Effect embodiment
Relate to equipment: AMAT Mirra Mesa, Logitech PM5 polishing machine, Nano MetricsNanospec 6100 film thicknesses detect machine, and Napson RT-70 film thickness detects machine, OlympusBH3-MJL.
Adopt method of the present invention that rubbing head is carried out improved Logitech PM5 polishing machine square shaped wafer fritter and carry out chemically mechanical polishing, use AMAT Mirra Mesa polishing machine platform (the current chemical-mechanical polishing mathing platform that generally adopts) that circular wafers is carried out chemically mechanical polishing, the data that two kinds of methods are obtained compare as follows:
1. the result who uses different polishing fluids that identical material is carried out chemically mechanical polishing compares
Polishing fluid: Anji TCU2000-B polishing fluid, Anji TCU2000-C polishing fluid, Anji TCU2000-D polishing fluid Anji TCU2000-H polishing fluid.
Prior art: instrument is Mirra, 93 rev/mins of polishing disk rotating speeds, and 87 rev/mins of rubbing head rotating speeds, polishing fluid flow velocity 200ml/ minute, polishing pad Rodel Politex PEG pad, downforce 2psi, wafer are 8 " the circular blank wafer of Ta.
The inventive method: instrument is the PM5 after improving, 70 rev/mins of polishing disk rotating speeds, 90 rev/mins of rubbing head rotating speeds, polishing fluid flow velocity 100ml/ minute, polishing pad Rodel Politex PEG pad, downforce 2psi, the square blank wafer fritter of wafer 40mm x 40mm Ta.
Polish removal rate such as table 1 and shown in Figure 12.
The contrast of the removal speed of table 1 prior art (Mirra) and the present invention's (PM5) method
| Polishing fluid | PM5(A/min) | Mirra(A/min) |
| AnjiTCU2000-B | 450 | 656 |
| AnjiTCU2000-C | 567 | 725 |
| AnjiTCU2000-D | 337 | 547 |
| AnjiTCU2000-H | 522 | 650 |
2. use the result who identical material is carried out chemically mechanical polishing with a kind of polishing fluid to compare
Polishing fluid: AnjiTCU2000-H4
Prior art: instrument is Mirra, 93 rev/mins of polishing disk rotating speeds, and 87 rev/mins of rubbing head rotating speeds, polishing fluid flow velocity 200ml/ minute, polishing pad Rodel Politex PEG pad, downforce 2psi, wafer are 8 " the circular blank wafer of TEOS.
The inventive method: instrument is the PM5 after improving, 70 rev/mins of polishing disk rotating speeds, 90 rev/mins of rubbing head rotating speeds, polishing fluid flow velocity 100ml/ minute, polishing pad Rodel Politex PEG pad, downforce 2psi, wafer are the square blank wafer fritter of 40mm x 40mm TEOS.
Polish removal rate such as table 2 and shown in Figure 13.
The contrast of the removal speed of table 2 prior art (Mirra) and the present invention's (PM5) method
| Date | 9-6 | 9-6 | 9-7 | 9-7 | 9-8 | 9-12 | 10-12 |
| Mirra (A/min) | 801 | 765 | 777 | 780 | 758 | 737 | 657 |
| PM5 (A/min) | 568 | 488 | 541 | 551 | 465 | 449 | 383 |
| Date | 10-13 | 10-17 | 10-18 | 10-19 | 10-23 | 11-1 | 11-10 |
| Mirra (A/min) | 616 | 731 | 778 | 782 | 776 | 718 | 738 |
| PM5 (A/min) | 375 | 438 | 550 | 554 | 525 | 412 | 459 |
By table 1 and 2 and Figure 12 and 13 in data as seen, use cmp method of the present invention, can obtain having the polishing speed of proportionate relationship with the polishing speed of existing cmp method gained, promptly can carry out the result of chemically mechanical polishing by method of the present invention, derive the method for utilization prior art and carry out the removal speed that chemically mechanical polishing can obtain, and then for research chemical Mechanical Polishing Technique a method more flexible, that cost is lower is provided.
Claims (11)
1. a cmp method is characterized in that: wafer is cut into the fritter wafer, carry out chemically mechanical polishing.
2. the method for claim 1, it is characterized in that: described fritter wafer is square fritter wafer.
3. method as claimed in claim 2 is characterized in that: the size of described square fritter is 5mm x 5mm to 212mm x 212mm.
4. the method for claim 1, it is characterized in that: the mode of described cutting is carried out for the special-purpose dicing saws that adopts band diamond blade or laser aid, but perhaps manually cuts with band diamond point, diamond head or other cutteves with cutter head of enough hardness cutting crystal wafers.
5. method as claimed in claim 4 is characterized in that: described manual step of cutting is:
(1) uses cutter to cut out a little openning over against the center of circle, be called the A point, hold A point both sides and break off with the fingers and thumb and split circular wafers and become 2 Office semicircle wafer at the edge line place of circular wafers;
(2) place in the middle of semicircle crystal round fringes line cuts out a little openning over against the center of circle, is called the B point, holds B point both sides and breaks off with the fingers and thumb and split the wafer that semicircle wafer becomes 2 Office, 1/4 circle;
(3) from the center of circle of the wafer of 1/4 circle, measure required square wafer fritter length X on one side, put vertical half of edge with this and cut a little openning, be called the C point, hold C point both sides and break off with the fingers and thumb and split semicircle wafer and become 2 Office along radius edge; The part that to be left with the method is broken off with the fingers and thumb and is cleaved into the rectangular wafer that has length X on one side;
(4) be the length Y that required square wafer fritter another side is measured on the summit on one side of X along length, cut out a little openning, be called the D point, hold D point both sides and break off with the fingers and thumb and split rectangular wafer and become 2 Office with this vertical edge.
6. the method for claim 1, it is characterized in that: described cmp method comprises following operating procedure:
(1) wafer is cut into fritter after, spill deionized water at the back side of wafer fritter (the not face that need polish);
(2) the wafer fritter is positioned in the clasp on the rubbing head, the back side is towards rubbing head;
(3) flicking wafer fritter makes the wafer fritter adhere to by the tension force and the rubbing head of water, and guarantees that clasp stops moving of wafer fritter;
(4) open the polishing fluid supply, open the rotation of rubbing head and polishing disk, fall and the supercharging rubbing head contacts with polishing pad, carry out chemically mechanical polishing, after finishing, the wafer fritter taken out from square clasp get final product.
7. method as claimed in claim 6 is characterized in that: in the step (2), described the wafer fritter is positioned over method in the clasp on the rubbing head for tweezers, vacuum WAND or directly use hand.
8. chemical-mechanical polisher of realizing the method for claim 1, it is characterized in that: each length of side center outwards increases by the shape of 1～2mm again in the shape that is shaped as described fritter crystal round fringes of the clasp inboard on the rubbing head of this equipment from the distance at rubbing head center.
9. chemical-mechanical polisher as claimed in claim 8, it is characterized in that: the clasp inboard on the rubbing head of this equipment is the center for the center with rubbing head, the length of side is respectively the right angle quadrangle of X+1～2mm and Y+1～2mm, the height of the outstanding rubbing head of this clasp is W, the numerical value of W is less than or equal to the fritter wafer thickness of being polished, the fritter wafer that is polished be shaped as the right angle quadrangle that the length of side is respectively X and Y.
10. the manufacture method of a chemical-mechanical polisher as claimed in claim 9, it is characterized in that: the circular wafers clasp on the rubbing head on the existing chemical-mechanical polisher is removed, with the rubbing head is the center, a clasp described in claim 9 is set gets final product.
11. manufacture method as claimed in claim 10, it is characterized in that: the circular wafers clasp on the rubbing head on the existing chemical-mechanical polisher is removed, the center of circle with rubbing head is the center, the length of side of drawing is respectively the right angle quadrangle of X+1～2mm and Y+1～2mm, from then on the tetragonal four edges in right angle is outwards widened U respectively, the numerical value of U is less than or equal to 25mm, another right angle four limit types draw, in two right angle quadrangle institute area surrounded, dig the groove that the degree of depth is V in rubbing head, the numerical value of V is less than rubbing head thickness; Make one and can embed this groove, width is U, and the part of outstanding groove highly is W, and the numerical value of W is less than or equal to the square clasp of the fritter wafer thickness of being polished, and clasp and rubbing head are cemented.
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Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104900492A (en) * | 2015-05-13 | 2015-09-09 | 北京通美晶体技术有限公司 | Special shape semiconductor wafer and preparation method thereof |
| CN104952701A (en) * | 2015-05-13 | 2015-09-30 | 北京通美晶体技术有限公司 | Special-shaped semiconductor wafer and preparation method thereof |
| CN107984383A (en) * | 2017-11-20 | 2018-05-04 | 杭州智谷精工有限公司 | A kind of planar part clamp method |
| CN108000356A (en) * | 2017-11-20 | 2018-05-08 | 杭州智谷精工有限公司 | A kind of aspheric-surface workpiece clamp method |
| CN108000243A (en) * | 2017-11-20 | 2018-05-08 | 杭州智谷精工有限公司 | A kind of biplane Polishing machining method |
| CN108015666A (en) * | 2017-11-20 | 2018-05-11 | 杭州智谷精工有限公司 | A kind of monoplane Polishing machining method |
| CN111673932A (en) * | 2020-04-21 | 2020-09-18 | 广州领拓仪器科技有限公司 | Preparation method of silicon wafer section sample |
| CN114030093A (en) * | 2021-12-01 | 2022-02-11 | 长飞光纤光缆股份有限公司 | Crystal cold processing method |
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2007
- 2007-11-30 CN CNA2007101715694A patent/CN101450512A/en active Pending
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104900492A (en) * | 2015-05-13 | 2015-09-09 | 北京通美晶体技术有限公司 | Special shape semiconductor wafer and preparation method thereof |
| CN104952701A (en) * | 2015-05-13 | 2015-09-30 | 北京通美晶体技术有限公司 | Special-shaped semiconductor wafer and preparation method thereof |
| CN104952701B (en) * | 2015-05-13 | 2018-07-10 | 北京通美晶体技术有限公司 | A kind of abnormity semiconductor wafer and preparation method thereof |
| CN104900492B (en) * | 2015-05-13 | 2018-08-07 | 北京通美晶体技术有限公司 | A kind of abnormity semiconductor wafer and preparation method thereof |
| CN107984383A (en) * | 2017-11-20 | 2018-05-04 | 杭州智谷精工有限公司 | A kind of planar part clamp method |
| CN108000356A (en) * | 2017-11-20 | 2018-05-08 | 杭州智谷精工有限公司 | A kind of aspheric-surface workpiece clamp method |
| CN108000243A (en) * | 2017-11-20 | 2018-05-08 | 杭州智谷精工有限公司 | A kind of biplane Polishing machining method |
| CN108015666A (en) * | 2017-11-20 | 2018-05-11 | 杭州智谷精工有限公司 | A kind of monoplane Polishing machining method |
| CN111673932A (en) * | 2020-04-21 | 2020-09-18 | 广州领拓仪器科技有限公司 | Preparation method of silicon wafer section sample |
| CN114030093A (en) * | 2021-12-01 | 2022-02-11 | 长飞光纤光缆股份有限公司 | Crystal cold processing method |
| CN114030093B (en) * | 2021-12-01 | 2023-02-28 | 长飞光纤光缆股份有限公司 | Crystal cold processing method |
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