CN103934908A - Method for machining sapphire special-shaped hole - Google Patents

Method for machining sapphire special-shaped hole Download PDF

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Publication number
CN103934908A
CN103934908A CN201410185778.4A CN201410185778A CN103934908A CN 103934908 A CN103934908 A CN 103934908A CN 201410185778 A CN201410185778 A CN 201410185778A CN 103934908 A CN103934908 A CN 103934908A
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China
Prior art keywords
sapphire
backing plate
aluminium flake
plate aluminium
trepanning
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CN201410185778.4A
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CN103934908B (en
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秦光临
王禄宝
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Tunghsu Group Co Ltd
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JIANGSU JIXING NEW MATERIALS CO Ltd
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Abstract

The invention discloses a method for machining a sapphire special-shaped hole. The surface of a sapphire workpiece semi-finished product is firstly washed with absolute ethyl alcohol; the surface of a base plate aluminum sheet is then washed with absolute ethyl alcohol; the base plate aluminum sheet is heated, and the base plate aluminum sheet and the sapphire workpiece semi-finished product are naturally radiated and cooled to be at the indoor temperature; the base plate aluminum sheet is fixed on a trepanning working platform; suspensions are mixed at the indoor temperature; a trepanning mold head is fixed on a trepanning machine head; a circulating pump is then started, and the trepanning process is automatically completed by the trepanning mold head under the gravity effect of the trepanning machine head; then the sapphire workpiece semi-finished product is separated from the base plate aluminum sheet, and the base plate aluminum sheet and the sapphire workpiece semi-finished product are naturally cooled to be at the indoor temperature. The method is high in trepanning efficiency, crystals are not prone to being cracked in the trepanning process, the trepanning surface accuracy is high, the trepanning process is easy to operate, and the device cost is low.

Description

A kind of processing method of sapphire irregularly-shaped hole
Technical field
The present invention relates to the perforate processing method of sapphire crystal, particularly a kind of processing method of sapphire irregularly-shaped hole, belongs to crystal processing technique field.
Background technology
Sapphire crystal, as a kind of important technology crystal, has been widely used in many fields such as science and technology, national defence, civilian industry and electronic technology.Sapphire crystal is to be combined into covalent bond form by three oxygen atoms and two aluminium atoms, and its crystal structure is hexagonal lattice structure.The hardness of sapphire crystal is very high, for 9 grades of Mohs' hardness, is only second to the hardest diamond.It has good light transmission, heat conductivity and electric insulating quality, mechanics good mechanical property, and there is wear-resisting and weather-proof feature.The fusing point of sapphire crystal is 2050 DEG C, and boiling point is 3500 DEG C, and maximum operating temperature can reach 1900 DEG C.Because sapphire crystal has the features such as high, wear-resistant, the high temperature resistant and acid-alkali-corrosive-resisting of hardness, and there is good optical property, thereby be widely used in substrate base and various optical detecting instrument and the visual instrument window interface of microelectronic.At present sapphire crystal (sheet) perforate mainly adopts laser boring, and its defect is as follows: first can to process thickness range little in laser boring, can process thickness≤0.60mm; The equipment of laser boring is conventionally very expensive on the other hand, makes equipment investment large; And in laser boring perforate process, crystal (sheet) easily ftractures.
Summary of the invention
The object of the invention is to overcome defect of the prior art, a kind of processing method of sapphire irregularly-shaped hole is provided, it is high that described method has perforate efficiency, thickness range can be processed large, hole shape is unrestricted, can output according to actual needs the hole of various shapes, and open surface essence height, perforate process simple operation and other advantages.
The present invention is achieved by the following technical programs.
A processing method for sapphire irregularly-shaped hole, described method step is as follows: (1) cleans sapphire workpiece blank surface with absolute ethyl alcohol; (2) clean backing plate aluminium flake surface with absolute ethyl alcohol; (3) backing plate aluminium flake is heated to 150-180 DEG C, pastes wax with high temperature sapphire workpiece blank is fixed on backing plate aluminium flake; (4) by backing plate aluminium flake and sapphire workpiece blank natural heat dissipation, be cooled to room temperature; (5) backing plate aluminium flake is fixed on perforate workbench; (6) under room temperature, boron carbide and water are mixed to form to suspension by the mass ratio of 1 ︰ 1.5; (7) perforate die head is fixed on tapping machine head; (8) start circulating pump, by boron carbide suspension outlet alignment apertures position, start supersonic generator, regulate ultrasonic power to 100-200w, frequency 30-35kHz; (9) perforate die head automatically completes perforate process under tapping machine head Action of Gravity Field; (10) take off sapphire workpiece blank and backing plate aluminium flake, sapphire workpiece blank and backing plate aluminium flake are heated to 150-180 DEG C, then sapphire workpiece blank is separated with backing plate aluminium flake, and naturally cool to room temperature.
The processing method of above-mentioned a kind of sapphire irregularly-shaped hole, wherein, the order number of described boron carbide is 240 orders.
The processing method of above-mentioned a kind of sapphire irregularly-shaped hole, wherein, the model that described high temperature is pasted wax is WX-02, buys in Dongguan City Song cypress grinding-material Co., Ltd.
The processing method of a kind of sapphire irregularly-shaped hole of the present invention, described method adopts sapphire workpiece blank is fixed on backing plate aluminium flake, again backing plate aluminium flake is fixed on perforate workbench, then by output the hole of various shapes with different perforate die heads on tapping machine, described method perforate efficiency is high, can reach 0.2-0.5mm/min; Can process thickness range large, can process thickness≤70mm; And hole shape is unrestricted, only need can output by changing difform die head the hole of required form, in perforate process, crystal is not easy cracking, open surface essence height, surface roughness Ra≤1.2 μ m, and perforate process is simple to operate, and equipment cost is low.
Detailed description of the invention
By specific embodiment, the specific embodiment of the present invention is described in further detail below.
Embodiment 1
A kind of processing method of sapphire irregularly-shaped hole, described method step is as follows: first clean sapphire workpiece blank surface with absolute ethyl alcohol, clean backing plate aluminium flake surface with absolute ethyl alcohol again, backing plate aluminium flake is heated to 150 DEG C, pasting wax with WX-02 type high temperature is fixed on sapphire workpiece blank on backing plate aluminium flake, by backing plate aluminium flake and sapphire workpiece blank natural heat dissipation, be cooled to room temperature, backing plate aluminium flake is fixed on perforate workbench, under room temperature, 240 object boron carbides and water are mixed to form to suspension by the mass ratio of 1 ︰ 1.5, perforate die head is fixed on tapping machine head, start circulating pump, by boron carbide suspension outlet alignment apertures position, start supersonic generator, regulate ultrasonic power to 100w, frequency 30kHz, perforate die head automatically completes perforate process under tapping machine head Action of Gravity Field, take off sapphire workpiece blank and backing plate aluminium flake, sapphire workpiece blank and backing plate aluminium flake are heated to 150 DEG C, then sapphire workpiece blank is separated with backing plate aluminium flake, and naturally cool to room temperature.
Embodiment 2
A kind of processing method of sapphire irregularly-shaped hole, described method step is as follows: first clean sapphire workpiece blank surface with absolute ethyl alcohol, clean backing plate aluminium flake surface with absolute ethyl alcohol again, backing plate aluminium flake is heated to 160 DEG C, pasting wax with WX-02 type high temperature is fixed on sapphire workpiece blank on backing plate aluminium flake, by backing plate aluminium flake and sapphire workpiece blank natural heat dissipation, be cooled to room temperature, backing plate aluminium flake is fixed on perforate workbench, under room temperature, 240 object boron carbides and water are mixed to form to suspension by the mass ratio of 1 ︰ 1.5, perforate die head is fixed on tapping machine head, start circulating pump, by boron carbide suspension outlet alignment apertures position, start supersonic generator, regulate ultrasonic power to 150w, frequency 32kHz, perforate die head automatically completes perforate process under tapping machine head Action of Gravity Field, take off sapphire workpiece blank and backing plate aluminium flake, sapphire workpiece blank and backing plate aluminium flake are heated to 160 DEG C, then sapphire workpiece blank is separated with backing plate aluminium flake, and naturally cool to room temperature.
Embodiment 3
A kind of processing method of sapphire irregularly-shaped hole, described method step is as follows: first clean sapphire workpiece blank surface with absolute ethyl alcohol, clean backing plate aluminium flake surface with absolute ethyl alcohol again, backing plate aluminium flake is heated to 170 DEG C, pasting wax with WX-02 type high temperature is fixed on sapphire workpiece blank on backing plate aluminium flake, by backing plate aluminium flake and sapphire workpiece blank natural heat dissipation, be cooled to room temperature, backing plate aluminium flake is fixed on perforate workbench, under room temperature, 240 object boron carbides and water are mixed to form to suspension by the mass ratio of 1 ︰ 1.5, perforate die head is fixed on tapping machine head, start circulating pump, by boron carbide suspension outlet alignment apertures position, start supersonic generator, regulate ultrasonic power to 180w, frequency 35kHz, perforate die head automatically completes perforate process under tapping machine head Action of Gravity Field, take off sapphire workpiece blank and backing plate aluminium flake, sapphire workpiece blank and backing plate aluminium flake are heated to 170 DEG C, then sapphire workpiece blank is separated with backing plate aluminium flake, and naturally cool to room temperature.
Embodiment 4
A kind of processing method of sapphire irregularly-shaped hole, described method step is as follows: first clean sapphire workpiece blank surface with absolute ethyl alcohol, clean backing plate aluminium flake surface with absolute ethyl alcohol again, backing plate aluminium flake is heated to 180 DEG C, pasting wax with WX-02 type high temperature is fixed on sapphire workpiece blank on backing plate aluminium flake, by backing plate aluminium flake and sapphire workpiece blank natural heat dissipation, be cooled to room temperature, backing plate aluminium flake is fixed on perforate workbench, under room temperature, 240 object boron carbides and water are mixed to form to suspension by the mass ratio of 1 ︰ 1.5, perforate die head is fixed on tapping machine head, start circulating pump, by boron carbide suspension outlet alignment apertures position, start supersonic generator, regulate ultrasonic power to 200w, frequency 30kHz, perforate die head automatically completes perforate process under tapping machine head Action of Gravity Field, take off sapphire workpiece blank and backing plate aluminium flake, sapphire workpiece blank and backing plate aluminium flake are heated to 180 DEG C, then sapphire workpiece blank is separated with backing plate aluminium flake, and naturally cool to room temperature.
Adopt the method for the invention hole shape unrestricted, can output according to actual needs various difform holes; And perforate efficiency is high, can reach 0.2-0.5mm/min; Can process thickness range large, can process thickness≤70mm; Open surface essence height, surface roughness Ra≤1.2 μ m.
Here description of the invention and application is illustrative, not wants scope of the present invention to limit in the above-described embodiments, and therefore, the present invention is not subject to the restriction of the present embodiment, and the technical scheme that any employing equivalence replacement obtains is all in the scope of protection of the invention.

Claims (3)

1. a processing method for sapphire irregularly-shaped hole, is characterized in that, described method step is as follows:
(1) clean sapphire workpiece blank surface with absolute ethyl alcohol; (2) clean backing plate aluminium flake surface with absolute ethyl alcohol; (3) backing plate aluminium flake is heated to 150-180 DEG C, pastes wax with high temperature sapphire workpiece blank is fixed on backing plate aluminium flake; (4) by backing plate aluminium flake and sapphire workpiece blank natural heat dissipation, be cooled to room temperature; (5) backing plate aluminium flake is fixed on perforate workbench; (6) under room temperature, boron carbide and water are mixed to form to suspension by the mass ratio of 1 ︰ 1.5; (7) perforate die head is fixed on tapping machine head; (8) start circulating pump, by boron carbide suspension outlet alignment apertures position, start supersonic generator, regulate ultrasonic power to 100-200w, frequency 30-35kHz; (9) perforate die head automatically completes perforate process under tapping machine head Action of Gravity Field; (10) take off sapphire workpiece blank and backing plate aluminium flake, sapphire workpiece blank and backing plate aluminium flake are heated to 150-180 DEG C, then sapphire workpiece blank is separated with backing plate aluminium flake, and naturally cool to room temperature.
2. the processing method of a kind of sapphire irregularly-shaped hole as claimed in claim 1, is characterized in that, the order number of described boron carbide is 240 orders.
3. the processing method of a kind of sapphire irregularly-shaped hole as claimed in claim 1, is characterized in that, the model that described high temperature is pasted wax is WX-02, buys in Dongguan City Song cypress grinding-material Co., Ltd.
CN201410185778.4A 2014-05-05 2014-05-05 A kind of processing method of sapphire irregularly-shaped hole Active CN103934908B (en)

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105834840A (en) * 2015-01-15 2016-08-10 深圳市网印巨星机电设备有限公司 Processing method and processing device for sapphire aperture
CN107745290A (en) * 2017-04-18 2018-03-02 重庆四联特种装备材料有限公司 Special-shaped plain film polishes adhering method

Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1094115A (en) * 1965-04-28 1967-12-06 Osoboe K Buro Proektorivaniyu Method of and apparatus for ultrasonic boring of hard materials
CN1546283A (en) * 2003-12-16 2004-11-17 汪开庆 Optical grinding machine and method for processing sapphire crystal substrate for semiconductor use
WO2011020775A1 (en) * 2009-08-21 2011-02-24 Snecma Tool for machining a cmc by milling and ultrasonic abrasion
CN201850220U (en) * 2010-11-06 2011-06-01 湖北菲利华石英玻璃股份有限公司 Precise ultrasonic wave punching mould of quartz glass sheet
CN102092099A (en) * 2009-12-10 2011-06-15 湖州金科石英有限公司 Quartz optical fiber rod drilling process
CN102166790A (en) * 2011-01-21 2011-08-31 苏州辰轩光电科技有限公司 Processing method for removing rough surface and scars of sapphire substrate
CN102700005A (en) * 2012-05-11 2012-10-03 倪新军 Drilling method for high-frequency ceramic circuit boards
CN103029226A (en) * 2012-12-06 2013-04-10 江苏吉星新材料有限公司 Forming method of sapphire pipe
CN103522426A (en) * 2013-10-21 2014-01-22 朱云霞 Drilling method for high-frequency ceramic circuit boards

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DD265820A1 (en) * 1987-11-12 1989-03-15 Nachrichten Elektronik Zft ARRANGEMENT FOR ULTRASOUND DRILLING

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1094115A (en) * 1965-04-28 1967-12-06 Osoboe K Buro Proektorivaniyu Method of and apparatus for ultrasonic boring of hard materials
CN1546283A (en) * 2003-12-16 2004-11-17 汪开庆 Optical grinding machine and method for processing sapphire crystal substrate for semiconductor use
WO2011020775A1 (en) * 2009-08-21 2011-02-24 Snecma Tool for machining a cmc by milling and ultrasonic abrasion
CN102092099A (en) * 2009-12-10 2011-06-15 湖州金科石英有限公司 Quartz optical fiber rod drilling process
CN201850220U (en) * 2010-11-06 2011-06-01 湖北菲利华石英玻璃股份有限公司 Precise ultrasonic wave punching mould of quartz glass sheet
CN102166790A (en) * 2011-01-21 2011-08-31 苏州辰轩光电科技有限公司 Processing method for removing rough surface and scars of sapphire substrate
CN102700005A (en) * 2012-05-11 2012-10-03 倪新军 Drilling method for high-frequency ceramic circuit boards
CN103029226A (en) * 2012-12-06 2013-04-10 江苏吉星新材料有限公司 Forming method of sapphire pipe
CN103522426A (en) * 2013-10-21 2014-01-22 朱云霞 Drilling method for high-frequency ceramic circuit boards

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105834840A (en) * 2015-01-15 2016-08-10 深圳市网印巨星机电设备有限公司 Processing method and processing device for sapphire aperture
CN107745290A (en) * 2017-04-18 2018-03-02 重庆四联特种装备材料有限公司 Special-shaped plain film polishes adhering method
CN107745290B (en) * 2017-04-18 2019-06-11 重庆四联特种装备材料有限公司 Special-shaped plain film polishes adhering method

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Effective date of registration: 20230105

Address after: 100102 20628, Floor 2, Building A1, No. 1, Huangchang West Road, Dougezhuang, Chaoyang District, Beijing

Patentee after: Youran Walker (Beijing) Technology Co.,Ltd.

Address before: 212200 new materials Industrial Park, Youfang Town, Yangzhong City, Zhenjiang City, Jiangsu Province

Patentee before: JIANGSU JESHINE NEW MATERIAL Co.,Ltd.

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Effective date of registration: 20230609

Address after: 050035 No. 369, Zhujiang Avenue, high tech Zone, Shijiazhuang, Hebei

Patentee after: TUNGHSU GROUP Co.,Ltd.

Address before: 100102 20628, Floor 2, Building A1, No. 1, Huangchang West Road, Dougezhuang, Chaoyang District, Beijing

Patentee before: Youran Walker (Beijing) Technology Co.,Ltd.

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Denomination of invention: A processing method for sapphire irregular holes

Granted publication date: 20151230

Pledgee: Hengshui Bank Co.,Ltd.

Pledgor: TUNGHSU GROUP Co.,Ltd.

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