CN106392854A - Device and system used for sapphire product appearance polishing and polishing method - Google Patents
Device and system used for sapphire product appearance polishing and polishing method Download PDFInfo
- Publication number
- CN106392854A CN106392854A CN201510454790.5A CN201510454790A CN106392854A CN 106392854 A CN106392854 A CN 106392854A CN 201510454790 A CN201510454790 A CN 201510454790A CN 106392854 A CN106392854 A CN 106392854A
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- CN
- China
- Prior art keywords
- polishing
- sapphire
- plane
- cambered surface
- skin
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Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B29/00—Machines or devices for polishing surfaces on work by means of tools made of soft or flexible material with or without the application of solid or liquid polishing agents
- B24B29/02—Machines or devices for polishing surfaces on work by means of tools made of soft or flexible material with or without the application of solid or liquid polishing agents designed for particular workpieces
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
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- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Abstract
The invention provides a device used for sapphire product appearance polishing. The device comprises a polishing disk and soft grinding skin. The soft grinding skin comprises a buffing layer and a soft foam layer which is fixedly connected with the disk surface of the polishing disk. The invention further provides a polishing method used for sapphire appearance. The method includes the steps that first, the plane A and the cambered surface of a sapphire panel are subjected to coarse polishing; and second, the plane A, the cambered surface and the connection part of the sapphire panel are subjected to elaborate polishing, the polishing device is adopted, the soft grinding skin and the polishing disk are fixedly connected, pressure is applied to sapphire so that the plane A, the cambered surface and the connection part can be recessed into the soft grinding skin, and relative rotation motion of the soft grinding skin and the sapphire is combined with a polishing solution containing SiO2 particles for polishing. By the adoption of the polishing device, the arc edge and the plane A can achieve integrated elaborate polishing, so that lapping defects of the plane A and the arc edge do not exist, and the purpose of improving 3D sapphire appearance can be achieved.
Description
Technical field
The present invention relates to sapphire Product processing field and in particular to a kind of for sapphire panel profile polishing device,
System and finishing method.
Background technology
Traditional sapphire sheet is generally used for doing substrate, is plain film.Plain film glossing is simple, sweeps grinding machine cooperation using plain grinding
Polishing fluid, you can reach polishing effect.Increasingly extensive with sapphire cover plate and touch-screen applications, structure is also increasingly sophisticated,
The products such as 2.5D (inclined-plane containing a direction or globoidal structure), 3D (inclined-plane containing different directions or globoidal structure)
In succession occur and increasingly go deep in the live and work of people.To the touch-screen processing dimension of sapphire product and machining accuracy
Require also improving, especially there is the product of 3D structure, be related to arc side, convex flat face (A plane) and binding site,
Its polishing difficulty is big.Sweep grinding machine using traditional plain grinding to be polished, once can only polish a face, and cambered surface and convex flat face
Between there is lapping defect, affect outward appearance yield.
Therefore, this area needs a kind of energy desalination even cambered surface of elimination sapphire 2.5D or 3D panel with convex flat face indirect
The burnishing device of trace and its finishing method.
Content of the invention
The present invention relates to sapphire burnishing device and method, especially a kind of profile polishing side of 2.5D, 3D sapphire product
Method, so as to A plane and arc side do not have lapping defect, improves the polishing effect of 2.5D, 3D sapphire surface.
Therefore, present invention firstly provides a kind of for sapphire product design polishing device, described device include polishing disk and
Buffing skin, described buffing skin includes grinding the soft foamed cotton layer that cortex and the card with described polishing disk are fixedly connected.
In a kind of specific embodiment, the thickness of described mill cortex is 0.3～1.0mm, and the thickness of described foamed cotton layer is
1.5～5mm.
In a kind of specific embodiment, described mill skin is natural leather or synthetic leather, and described soft foam steeps for PU
Cotton, EPE foam, CR foam or EPDM foam.
In a kind of specific embodiment, described buffing skin is also included positioned at the viscose glue between mill cortex and soft foamed cotton layer
Layer, and the thickness of described adhesive-layer is 0.1～1.0mm.
The present invention also provides a kind of system for the polishing of sapphire profile, and described system includes device as described above and polishing
Liquid, the SiO that described polishing fluid is is 0.2～1.0 micron containing average grain diameter2The polishing fluid of particulate.
The present invention also provides a kind of finishing method of sapphire profile, and methods described comprises the steps,
Step one：The A plane of rough polishing sapphire panel and cambered surface：Wherein A plane be finished to combine Liquid diamond using copper dish
It is polished, the mill equipment of sweeping being finished to using comprising brush plate of cambered surface is polished with reference to Liquid diamond, in described Liquid diamond
The average grain diameter of diamond particles is 1.5～5 microns；
Step 2：Essence throws A plane, cambered surface and its connecting portion of sapphire panel：Using burnishing device as above,
Wherein buffing skin is fixedly connected with polishing disk, applies pressure to sapphire and its A plane, cambered surface and its connecting portion are absorbed in
In described buffing skin, and it is used in combination containing SiO with sapphire relative rotary motion by buffing skin2The polishing fluid of particulate is carried out
Polishing, described SiO2The average grain diameter of particulate is 0.2～1.0 micron.
In a kind of specific embodiment, in described step one, the polishing time of A plane is 10～70 minutes/piece, pressure
For 50～150kg, the rotating speed of copper dish is 25～60rpm, and in step one, the polishing time of cambered surface is 15～60 minutes/piece, pressure
For 100～200kg, the rotating speed of brush plate is 30～60rpm.
In a kind of specific embodiment, in described step 2, the rotating speed of polishing disk is 20～50rpm, containing SiO2Polishing
Liquid pH value is 8～12, and the sapphire process time on every piece of buffing skin is 2～6 hours.
The present invention correspondingly provides the sapphire product that a kind of method as defined above prepares.
The present invention polishes the zones of different of 3D sapphire outer surface using the polishing material of multiple granularities at many levels, especially carries
For a kind of burnishing device containing buffing skin, integrated with A plane for arc side essence can be thrown, make A plane and arc side there is not lapping defect,
Reach the purpose improving 3D sapphire profile.
Brief description
Fig. 1 is the structural representation of burnishing device thickness direction in the present invention,
Fig. 2 is the Working position schematic diagram of sapphire panel in the present invention,
Wherein：1st, grind cortex, 2, soft foamed cotton layer, 3, adhesive-layer, 4, polishing disk, 01, A plane, 02, cambered surface.
Specific embodiment
Present invention firstly provides a kind of device for the polishing of sapphire product design, described device includes polishing disk 4 and buffing
Skin, described buffing skin includes grinding the soft foamed cotton layer 2 that cortex 1 and the card with described polishing disk are fixedly connected.Described mill skin
The thickness of layer is 0.3～1.0mm, and the thickness of described foamed cotton layer is 1.5～5mm.Described mill skin is natural leather or synthetic leather,
Described soft foam is PU foam, EPE foam, CR foam or EPDM foam.Described natural leather include pig leather,
Ox-hide leather, sheep, horse skin leather, donkey hide leather and kangaroo leather etc., described synthetic leather includes PVC artificial leather and PU closes
Finished leather.Described soft foam is PU foam (polyurethane foam), EPE foam (polyethylene foam cotton), CR foam are (logical
With type specific rubber foam) and the species such as EPDM foam (ethylene propylene diene rubber foam), described soft foam can pass through business
Purchase obtains.Preferably described buffing skin is also included positioned at the adhesive-layer 3 between mill cortex and soft foamed cotton layer, and described adhesive-layer
Thickness be 0.1～1.0mm.
During the use of described buffing skin, directly and sapphire contact, described buffing skin is attached at smooth in the outside of mill cortex
Hard polishing disk (as iron pan) on, its mill cortex outwardly, sapphire cambered surface, A plane and the junction of the two are pressed in
So that buffing skin produces indent deformation in polishing process, by the relative motion of sapphire and buffing skin on described buffing skin
And sapphire is polished, in polishing process, the mutual pressure between sapphire and polishing disk is preferably 90～110kg, that is, quite
Power in 882～1078N.Described soft foamed cotton layer can be bonding or using other with being fixedly connected of polishing disk
Mode is by spacing for soft foamed cotton layer on polishing disk.
The present invention also provides a kind of system for the polishing of sapphire profile, and described system includes said apparatus and polishing fluid,
The SiO that described polishing fluid is is 0.2～1.0 micron containing average grain diameter2The polishing fluid of particulate.
The present invention also provides a kind of finishing method of sapphire profile, and methods described comprises the steps,
Step one：The A plane of polishing sapphire panel and cambered surface：Wherein A plane be finished to combine Liquid diamond using copper dish
It is polished, the mill equipment of sweeping being finished to using comprising brush plate of cambered surface is polished with reference to Liquid diamond, in described Liquid diamond
The average grain diameter of diamond particles is 1.5～5 microns.In described step one, the polishing time of A plane is 10～70 minutes/piece, pressure
Power is 50～150kg, and the rotating speed of copper dish is 25～60rpm, and in step one, the polishing time of cambered surface is 15～60 minutes/piece, pressure
Power is 100～200kg, and the rotating speed of brush plate is 30～60rpm.
Step 2：The A plane of polishing sapphire panel, cambered surface and its connecting portion：Using burnishing device as above,
Wherein buffing skin is fixedly connected with polishing disk, applies pressure to sapphire and its A plane, cambered surface and its connecting portion are absorbed in
In described buffing skin, and it is used in combination containing SiO with sapphire relative rotary motion by buffing skin2The polishing fluid of particulate is carried out
Polishing, described SiO2The average grain diameter of particulate is 0.2～1.0 micron.In described step 2, the rotating speed of polishing disk is 20～50rpm,
Containing SiO2Polishing fluid pH value be 8～12, the sapphire process time on every piece of buffing skin be 2～6 hours.
Mill equipment of sweeping in step one includes the hairbrush positioned at sapphire both sides and cast iron plate.In the step one of the present invention, permissible
First polish cambered surface after polishing A plane it is also possible to polish A plane after first polishing cambered surface, according to the difference of wherein sequencing,
Can get the sapphire panel product of FINAL APPEARANCE difference.A kind of polishing in specific embodiment, in step 2
On disk, buffing skin is pasted in whole face, and above every piece of buffing skin, corresponding four pressure heads, each pressure head loads 25 sapphire panels,
Whole mill loads 100 sapphire panels.
The present invention correspondingly provides the sapphire product that a kind of method as defined above prepares.
Embodiment 1
The present invention provides a kind of processing technology of sapphire panel, comprises the following steps that：
(1) copper dish rough polishing A plane：3D sapphire product is through copper dish rough polishing, auxiliary material 2～3um Liquid diamond, polishing time
25～35min/pcs, pressure 90～110KG, lower wall rotating speed and upper disk (pressure disc) rotating speed are 40～50RPM (upper lower burrs
Rotation direction contrary), surface removal amount is 0.03～0.04mm, surface of polished roughness effect 10nm；
(2) arc side rough polishing：By the product after copper dish rough polishing using 15B sweep mill equipment (equally can also using with
15B sweeps mill equipment card 13B and 16B of different sizes etc. and sweeps mill equipment), with W3 diamond polishing fluid, (particle diameter is 3 to auxiliary material
Micron), polishing time is every 35～45min, upper disk pressure 140～160KG, rotating speed 40～50RPM, surface of polished
Roughness effect 10nm about；
(3) 3D face finishing polish：Crossed the product of copper dish/sweep mill, (material is leather-like, adheres to one using 3D buffing skin
Layer 2.5mm thickness foam), cooperatively form a kind of burnishing device, buffing skin thickness about 3～5mm, profit with hard polishing disk
With pressure (90～110KG), product A plane is absorbed in (height 0.5mm during arc) during mill suitcase is wrapped up in 3D arc in face, under
Disk and pressure disc rotating speed 30～40rpm, throw polishing fluid using essence, and Main Ingredients and Appearance is a kind of SiO2Solution, SiO2Particle diameter is main
Distributed areas are 0.3～0.6um, and pH value is 9～10, the process time 3～4h of every sapphire product, surface roughness
2～5nm, A face is connected smooth with arc side, reaches product surface polishing effect.
The present invention polishes the zones of different of 3D sapphire outer surface using the polishing material of multiple granularities at many levels, especially carries
For a kind of burnishing device containing buffing skin, integrated with A plane for arc side essence can be thrown, make A plane and arc side there is not lapping defect,
Reach the purpose improving 3D sapphire profile.And the method that the present invention provides simplifies operation, has saved cost, has improve
Production efficiency.For the fine polishing of 3D sapphire product, practicality good it is easy to popularization and application, there is larger practicality
It is worth.
In a particular embodiment, using traditional plain grinding (the common mill skin using without foamed cotton layer), sweep the polishing of mill method
Sapphire product, A plane cannot be removed completely with the lapping defect on arc side, and the outward appearance yield of products obtained therefrom is below 15%.Yield
Too low, manufacturing cost high it is impossible to volume production.And adopt the method that the present invention provides to polish sapphire product, sapphire product
Outward appearance yield reaches 95%, can import batch production.
The foregoing is only the preferred embodiments of the present invention, be not limited to the present invention, for those skilled in the art
For member, the present invention can have various modifications and variations.All any modifications within the spirit and principles in the present invention, made,
Equivalent, improvement etc., should be included within the scope of the present invention.
Claims (9)
1. a kind of device for the polishing of sapphire product design, described device includes polishing disk (4) and buffing skin, described
Buffing skin includes grinding the soft foamed cotton layer (2) that cortex (1) and the card with described polishing disk are fixedly connected.
2. according to claim 1 device it is characterised in that described mill cortex thickness be 0.3～1.0mm, described bubble
The thickness of cotton layer is 1.5～5mm.
3. device is it is characterised in that described mill skin is natural leather or synthetic leather, described according to claim 1
Soft foam is PU foam, EPE foam, CR foam or EPDM foam.
4. according to claim 1 device it is characterised in that described buffing skin is also included positioned at mill cortex and soft bubble
Adhesive-layer (3) between cotton layer, and the thickness of described adhesive-layer is 0.1～1.0mm.
5. a kind of system for the polishing of sapphire profile, described system is included as described in any one in Claims 1 to 4
Device and polishing fluid, the SiO that described polishing fluid is is 0.2～1.0 micron containing average grain diameter2The polishing fluid of particulate.
6. a kind of finishing method of sapphire profile, methods described comprises the steps,
Step one：The A plane of rough polishing sapphire panel and cambered surface：Wherein A plane be finished to combine Liquid diamond using copper dish
It is polished, the mill equipment of sweeping being finished to using comprising brush plate of cambered surface is polished with reference to Liquid diamond, in described Liquid diamond
The average grain diameter of diamond particles is 1.5～5 microns；
Step 2：Essence throws A plane, cambered surface and its connecting portion of sapphire panel：Using any in such as Claims 1 to 4
Burnishing device described in one, wherein buffing skin is fixedly connected with polishing disk, to sapphire apply pressure make its A plane,
Cambered surface and its connecting portion are absorbed in described buffing skin, with sapphire relative rotary motion and are used in combination and contain by buffing skin
SiO2The polishing fluid of particulate is polished, described SiO2The average grain diameter of particulate is 0.2～1.0 micron.
7. according to claim 6 method it is characterised in that in described step one A plane polishing time be 10～70
Minute/piece, pressure is 50～150kg, and the rotating speed of copper dish is 25～60rpm, and in step one, the polishing time of cambered surface is 15～60
Minute/piece, pressure is 100～200kg, and the rotating speed of brush plate is 30～60rpm.
8. according to claim 6 method it is characterised in that in described step 2 polishing disk rotating speed be 20～50rpm,
Containing SiO2Polishing fluid pH value be 8～12, the sapphire process time on every piece of buffing skin be 2～6 hours.
9. a kind of sapphire product preparing as any one methods described in claim 6～8.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510454790.5A CN106392854B (en) | 2015-07-29 | 2015-07-29 | Device, system and polishing method for the polishing of sapphire product design |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510454790.5A CN106392854B (en) | 2015-07-29 | 2015-07-29 | Device, system and polishing method for the polishing of sapphire product design |
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| CN106392854A true CN106392854A (en) | 2017-02-15 |
| CN106392854B CN106392854B (en) | 2018-09-18 |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN109202672A (en) * | 2017-06-30 | 2019-01-15 | 蓝思科技（长沙）有限公司 | A kind of polishing process, polishing machine and mobile phone glass cover board |
| CN109759907A (en) * | 2017-11-10 | 2019-05-17 | 蓝思科技股份有限公司 | A kind of polishing method of 2.5D sapphire window screen |
| CN110695773A (en) * | 2019-09-26 | 2020-01-17 | 东莞市马越实业有限公司 | Scratch repair process for glass or sapphire panel on surface of electronic product |
| CN110729175A (en) * | 2019-10-07 | 2020-01-24 | 淮安澳洋顺昌集成电路股份有限公司 | Method for sticking sapphire wafer |
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