CN106392854B - Device, system and polishing method for the polishing of sapphire product design - Google Patents
Device, system and polishing method for the polishing of sapphire product design Download PDFInfo
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- CN106392854B CN106392854B CN201510454790.5A CN201510454790A CN106392854B CN 106392854 B CN106392854 B CN 106392854B CN 201510454790 A CN201510454790 A CN 201510454790A CN 106392854 B CN106392854 B CN 106392854B
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- Prior art keywords
- polishing
- sapphire
- cambered surface
- planes
- skin
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Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B29/00—Machines or devices for polishing surfaces on work by means of tools made of soft or flexible material with or without the application of solid or liquid polishing agents
- B24B29/02—Machines or devices for polishing surfaces on work by means of tools made of soft or flexible material with or without the application of solid or liquid polishing agents designed for particular workpieces
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
Abstract
The present invention provides a kind of device for the polishing of sapphire product design, and described device includes polishing disk and buffing skin, and the buffing skin includes the soft foamed cotton layer for grinding cortex and being fixedly connected with the disk of the polishing disk.The present invention also provides a kind of polishing methods of sapphire shape, and the method includes the steps one：The A planes and cambered surface and step 2 of rough polishing sapphire panel：Essence throws A planes, cambered surface and its connecting portion of sapphire panel：Using burnishing device as described above, wherein buffing skin is fixedly connected with polishing disk, and applying pressure to sapphire makes its A planes, cambered surface and its connecting portion be absorbed in the buffing skin, by buffing skin and sapphire relative rotary motion and is used in combination containing SiO2The polishing fluid of particle is polished.Using burnishing device provided by the invention, cambered surface essence integrated with A planes can be thrown, make A planes that lapping defect be not present with cambered surface, achieve the purpose that improve 3D sapphire shapes.
Description
Technical field
The present invention relates to sapphire product manufacture fields, and in particular to the dress that a kind of shape for sapphire panel polishes
It sets, system and polishing method.
Background technology
Traditional sapphire sheet is generally used for doing substrate, is plain film.Plain film polishing process is simple, sweeps grinding machine using plain grinding and matches
Close polishing fluid, you can reach polishing effect.As sapphire cover board and touch-screen applications are increasingly extensive, structure is also increasingly sophisticated,
The products such as 2.5D (containing there are one the inclined-planes or globoidal structure in direction), 3D (inclined-plane containing different directions or globoidal structure) are successive
Occur and increasingly go deep into people’s lives and work.To the processing dimension and requirement on machining accuracy of touch screen sapphire product
Also it is improving, especially the product with 3D structures, is being related to cambered surface, convex flat face (A planes) and binding site, polishing difficulty
Greatly.Grinding machine is swept using traditional plain grinding to be polished, and can only once polish a face, and exist between cambered surface and convex flat face and connect
Trace influences appearance yield.
Therefore, this field needs a kind of can desalinate even to be eliminated between the cambered surface and convex flat face of sapphire 2.5D or 3D panel
The burnishing device and its polishing method of lapping defect.
Invention content
The present invention relates to sapphire burnishing device and method, the shape of especially a kind of 2.5D, 3D sapphire product polishes
Method makes its A plane that lapping defect be not present with cambered surface, improves the polishing effect of 2.5D, 3D sapphire surface.
Therefore, present invention firstly provides a kind of device for the polishing of sapphire product design, described device includes polishing
Disk and buffing skin, the buffing skin include the soft foamed cotton layer for grinding cortex and being fixedly connected with the disk of the polishing disk.
In a kind of specific embodiment, the thickness of the mill cortex is 0.3~1.0mm, the thickness of the foamed cotton layer
For 1.5~5mm.
In a kind of specific embodiment, the mill skin is natural leather or synthetic leather, and the soft foam is PU
Foam, EPE foams, CR foams or EPDM foams.
In a kind of specific embodiment, the buffing skin further includes being located at gluing between mill cortex and soft foamed cotton layer
Glue-line, and the thickness of the adhesive-layer is 0.1~1.0mm.
The present invention also provides a kind of systems for the polishing of sapphire shape, the system comprises device as described above and
Polishing fluid, the polishing fluid be 0.2~1.0 micron containing average grain diameter SiO2The polishing fluid of particle.
The present invention also provides a kind of polishing methods of sapphire shape, and described method includes following steps,
Step 1：The A planes and cambered surface of rough polishing sapphire panel：Wherein A planes be finished to use copper dish combination diamond
Liquid is polished, and cambered surface is finished to be polished using the mill equipment combination Liquid diamond of sweeping comprising brush plate, the Liquid diamond
The average grain diameter of middle diamond particles is 1.5~5 microns；
Step 2：Essence throws A planes, cambered surface and its connecting portion of sapphire panel：Using burnishing device as described above,
Wherein buffing skin is fixedly connected with polishing disk, and applying pressure to sapphire makes its A planes, cambered surface and its connecting portion be absorbed in institute
It states in buffing skin, by buffing skin and sapphire relative rotary motion and is used in combination and contains SiO2The polishing fluid of particle is thrown
Light, the SiO2The average grain diameter of particle is 0.2~1.0 micron.
In a kind of specific embodiment, the polishing time of A planes is 10~70 minutes/piece, pressure in the step 1
Power is 50~150kg, and the rotating speeds of copper dish is 25~60rpm, and the polishing time of cambered surface is 15~60 minutes/piece, pressure in step 1
Power is 100~200kg, and the rotating speed of brush plate is 30~60rpm.
In a kind of specific embodiment, the rotating speed of polishing disk is 20~50rpm in the step 2, contains SiO2Throwing
Light liquid pH value is 8~12, and the sapphire process time on every piece of buffing skin is 2~6 hours.
The present invention correspondingly provides a kind of sapphire product that method as described above is prepared.
The present invention polishes the different zones of 3D sapphires outer surface using the polishing material of multi-level a variety of granularities, especially
A kind of burnishing device of the skin containing buffing is provided, cambered surface essence integrated with A planes can be thrown, make A planes that lapping defect be not present with cambered surface,
Achieve the purpose that improve 3D sapphire shapes.
Description of the drawings
Fig. 1 is the structural schematic diagram of burnishing device thickness direction in the present invention,
Fig. 2 is the Working position schematic diagram of sapphire panel in the present invention,
Wherein：1, cortex is ground, 2, soft foamed cotton layer, 3, adhesive-layer, 4, polishing disk, 01, A planes, 02, cambered surface.
Specific implementation mode
Present invention firstly provides a kind of devices for the polishing of sapphire product design, and described device includes 4 He of polishing disk
Buffing skin, the buffing skin include the soft foamed cotton layer 2 for grinding cortex 1 and being fixedly connected with the disk of the polishing disk.The mill
The thickness of cortex is 0.3~1.0mm, and the thickness of the foamed cotton layer is 1.5~5mm.The mill skin is natural leather or synthesis skin
Leather, the soft foam are PU foams, EPE foams, CR foams or EPDM foams.The natural leather includes pig leather, ox-hide
Leather, sheep, horse skin leather, donkey hide leather and kangaroo leather etc., the synthetic leather includes PVC artificial leather and PU synthetic leather.It is described
Soft foam is PU foams (polyurethane foam), EPE foams (polyethylene foam cotton), CR foams (universal specific rubber foam)
It can pass through commercially available acquisition with types, the soft foams such as EPDM foams (ethylene propylene diene rubber foam).It is preferred that the buffing skin
Further include the adhesive-layer 3 being located between mill cortex and soft foamed cotton layer, and the thickness of the adhesive-layer is 0.1~1.0mm.
During the use of the buffing skin, grinds the outside of cortex and be directly attached at sapphire contact, the buffing skin
On smooth hard polishing disk (such as iron pan), outwardly, the junction of sapphire cambered surface, A planes and the two is pressed in institute to mill cortex
It states on buffing skin so that buffing skin generates indent deformation in polishing process, by the relative motion of sapphire and buffing skin
Sapphire is polished, the mutual pressure in polishing process between sapphire and polishing disk is preferably 90~110kg, that is,
The power of 882~1078N.The soft foamed cotton layer can be Nian Jie with being fixedly connected for polishing disk, can also be using other sides
Formula limits soft foamed cotton layer on polishing disk.
The present invention also provides a kind of systems for the polishing of sapphire shape, and the system comprises above-mentioned apparatus and polishings
Liquid, the polishing fluid be 0.2~1.0 micron containing average grain diameter SiO2The polishing fluid of particle.
The present invention also provides a kind of polishing methods of sapphire shape, and described method includes following steps,
Step 1：Polish the A planes and cambered surface of sapphire panel：Wherein A planes be finished to use copper dish combination diamond
Liquid is polished, and cambered surface is finished to be polished using the mill equipment combination Liquid diamond of sweeping comprising brush plate, the Liquid diamond
The average grain diameter of middle diamond particles is 1.5~5 microns.The polishing time of A planes is 10~70 minutes/piece in the step 1,
Pressure is 50~150kg, and the rotating speeds of copper dish is 25~60rpm, and the polishing time of cambered surface is 15~60 minutes/piece in step 1,
Pressure is 100~200kg, and the rotating speed of brush plate is 30~60rpm.
Step 2：Polish A planes, cambered surface and its connecting portion of sapphire panel：Using burnishing device as described above,
Wherein buffing skin is fixedly connected with polishing disk, and applying pressure to sapphire makes its A planes, cambered surface and its connecting portion be absorbed in institute
It states in buffing skin, by buffing skin and sapphire relative rotary motion and is used in combination and contains SiO2The polishing fluid of particle is thrown
Light, the SiO2The average grain diameter of particle is 0.2~1.0 micron.The rotating speed of polishing disk is 20~50rpm in the step 2,
Containing SiO2Polishing fluid pH value be 8~12, the sapphire process time on every piece of buffing skin is 2~6 hours.
Mill equipment of sweeping in step 1 includes the hairbrush and cast iron plate positioned at sapphire both sides.In the step one of the present invention,
Cambered surface is polished after A planes can first being polished, can also first polish and polish A planes after cambered surface, according to the difference of wherein sequencing,
The sapphire panel product of FINAL APPEARANCE difference can be obtained.In a kind of specific embodiment, the polishing in step 2
Whole face pastes buffing skin on disk, and four pressure heads are corresponded to above every piece of buffing skin, and 25 sapphire panels are loaded on each pressure head, whole
Mill loads 100 sapphire panels.
The present invention correspondingly provides a kind of sapphire product that method as described above is prepared.
Embodiment 1
The present invention provides a kind of processing technology of sapphire panel, comprises the following steps that：
(1) copper dish rough polishing A planes：3D sapphires product is through copper dish rough polishing, auxiliary material 2~3um Liquid diamonds, polishing time 25
~35min/pcs, 90~110KG of pressure, lower disk rotating speed are 40~50RPM (turns of upper lower burrs with upper disk (pressure disc) rotating speed
Dynamic direction is opposite), surface removal amount is 0.03~0.04mm, surface of polished roughness effect 10nm or so；
(2) cambered surface rough polishing：It (can also equally be used mill equipment is swept using 15B by the product after copper dish rough polishing
Mill equipment disk 13B and 16B etc. of different sizes, which are swept, with 15B sweeps mill equipment), with W3 diamonds polishing fluid, (grain size is 3 micro- to auxiliary material
Rice), polishing time is every 35~45min, upper disk pressure 140~160KG, 40~50RPM of rotating speed, surface of polished roughness
Effect 10nm or so；
(3) faces 3D finishing polish：The product of copper dish/sweep mill will be already expired, use 3D buffings skin (material for leather-like, adherency one
Layer 2.5mm thickness foam), a kind of burnishing device is cooperatively formed with hard polishing disk, buffing skin thickness about 3~5mm utilizes pressure
Product A planes and 3D cambered surfaces face are absorbed in (cambered surface height 0.5mm) during mill suitcase is wrapped up in, lower wall and pressure disc by power (90~110KG)
30~40rpm of rotating speed throws polishing fluid using essence, and main ingredient is a kind of SiO2Solution, SiO2The main distributed areas of grain size are 0.3
~0.6um, pH value are 9~10,3~4h of process time of every sapphire product, the surface roughness face 2~5nm, A and cambered surface
It is connected smooth, reaches product surface polishing effect.
The present invention polishes the different zones of 3D sapphires outer surface using the polishing material of multi-level a variety of granularities, especially
A kind of burnishing device of the skin containing buffing is provided, cambered surface essence integrated with A planes can be thrown, make A planes that lapping defect be not present with cambered surface,
Achieve the purpose that improve 3D sapphire shapes.And method provided by the invention simplifies process, has saved cost, improves production
Efficiency.For the fine polishing of 3D sapphire products, practicability is good, application easy to spread, has larger practical value.
In a particular embodiment, using traditional plain grinding (using the common mill skin without foamed cotton layer), sweep the throwing of mill method
The lapping defect of light sapphire product, A planes and cambered surface can not completely remove, and the appearance yield of products obtained therefrom is below 15%.Yield
Too low, manufacturing cost is high, can not volume production.And method provided by the invention polishing sapphire product is used, outside sapphire product
It sees yield and reaches 95%, batch production can be imported.
The foregoing is only a preferred embodiment of the present invention, is not intended to restrict the invention, for the skill of this field
For art personnel, the invention may be variously modified and varied.All within the spirits and principles of the present invention, any made by repair
Change, equivalent replacement, improvement etc., should all be included in the protection scope of the present invention.
Claims (6)
1. a kind of polishing method of sapphire shape, described method includes following steps,
Step 1：The A planes and cambered surface of rough polishing sapphire panel：Wherein A planes be finished to using copper dish combination Liquid diamond into
Row polishing, cambered surface are finished to be polished using the mill equipment combination Liquid diamond of sweeping comprising brush plate, be bored in the Liquid diamond
The average grain diameter of stone particle is 1.5~5 microns；
Step 2：Essence throws A planes, cambered surface and its connecting portion of sapphire panel：Using a kind of burnishing device, the polishing dress
Set including polishing disk (4) and buffing skin, wherein buffing skin is fixedly connected with polishing disk, the buffing skin include mill cortex (1) and
The soft foamed cotton layer (2) being fixedly connected with the disk of the polishing disk, to sapphire apply pressure make its A plane, cambered surface and
Its connecting portion is absorbed in the buffing skin, by buffing skin and sapphire relative rotary motion and is used in combination and is contained SiO2It is micro-
The polishing fluid of grain is polished, the SiO2The average grain diameter of particle is 0.2~1.0 micron.
2. method according to claim 1, which is characterized in that the thickness of the mill cortex is 0.3~1.0mm, the foam
The thickness of layer is 1.5~5mm.
3. method according to claim 1, which is characterized in that the mill skin be natural leather or synthetic leather, it is described soft
Foam is PU foams, EPE foams, CR foams or EPDM foams.
4. method according to claim 1, which is characterized in that the buffing skin further includes being located at mill cortex and soft foamed cotton layer
Between adhesive-layer (3), and the thickness of the adhesive-layer be 0.1~1.0mm.
5. method according to claim 1, which is characterized in that the polishing time of A planes is 10~70 points in the step 1
Clock/piece, pressure are 50~150kg, and the rotating speeds of copper dish is 25~60rpm, and the polishing time of cambered surface is 15~60 points in step 1
Clock/piece, pressure are 100~200kg, and the rotating speed of brush plate is 30~60rpm.
6. method according to claim 1, which is characterized in that the rotating speed of polishing disk is 20~50rpm in the step 2, is contained
SiO2Polishing fluid pH value be 8~12, the sapphire process time on every piece of buffing skin is 2~6 hours.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201510454790.5A CN106392854B (en) | 2015-07-29 | 2015-07-29 | Device, system and polishing method for the polishing of sapphire product design |
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| CN201510454790.5A CN106392854B (en) | 2015-07-29 | 2015-07-29 | Device, system and polishing method for the polishing of sapphire product design |
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| CN106392854B true CN106392854B (en) | 2018-09-18 |
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| CN109202672B (en) * | 2017-06-30 | 2021-01-22 | 蓝思科技（长沙）有限公司 | Polishing process, polishing machine and mobile phone glass cover plate |
| CN109759907B (en) * | 2017-11-10 | 2021-06-25 | 蓝思科技股份有限公司 | Polishing method of 2.5D sapphire window screen |
| CN110695773B (en) * | 2019-09-26 | 2021-06-15 | 东莞市马越实业有限公司 | Scratch repair process for glass or sapphire panel on surface of electronic product |
| CN110729175A (en) * | 2019-10-07 | 2020-01-24 | 淮安澳洋顺昌集成电路股份有限公司 | Method for sticking sapphire wafer |
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| CN1301184C (en) * | 2003-12-16 | 2007-02-21 | 汪开庆 | Optical grinding machine and method for processing sapphire crystal substrate for semiconductor use |
| JP2008238294A (en) * | 2007-03-26 | 2008-10-09 | Mitsubishi Materials Techno Corp | Polishing plate |
| JP5923353B2 (en) * | 2012-03-21 | 2016-05-24 | 富士紡ホールディングス株式会社 | Polishing pad sheet and manufacturing method thereof, polishing pad and manufacturing method thereof, and polishing method |
| CN102717318A (en) * | 2012-05-18 | 2012-10-10 | 常熟晶玻光学科技有限公司 | Processing process of 3D (three-dimensional) substrate |
| JP2015038174A (en) * | 2013-08-19 | 2015-02-26 | 積水化学工業株式会社 | Double-sided adhesive tape for fixing polishing pad |
| CN203592387U (en) * | 2013-10-29 | 2014-05-14 | 南昌欧菲光学技术有限公司 | Glass grinding device |
| CN103753381B (en) * | 2013-11-12 | 2016-06-22 | 江苏吉星新材料有限公司 | The surface polishing method of A-surface sapphire wafer |
| CN104440497B (en) * | 2014-11-24 | 2017-12-19 | 蓝思科技股份有限公司 | A kind of burnishing device and polishing method for mobile phone faceplate cambered surface |
| CN104589195B (en) * | 2015-02-12 | 2017-09-01 | 浙江星星科技股份有限公司 | A kind of processing method of the sapphire windows be protected screen of 3D electronic products |
| CN104742034A (en) * | 2015-03-27 | 2015-07-01 | 蓝思科技股份有限公司 | Polishing skin and method for polishing cambered surface of micro ceramic product through same |
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