CN110729175A - Method for sticking sapphire wafer - Google Patents
Method for sticking sapphire wafer Download PDFInfo
- Publication number
- CN110729175A CN110729175A CN201910946951.0A CN201910946951A CN110729175A CN 110729175 A CN110729175 A CN 110729175A CN 201910946951 A CN201910946951 A CN 201910946951A CN 110729175 A CN110729175 A CN 110729175A
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- Prior art keywords
- wafer
- bow
- positive
- polishing
- negative
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
- H01L21/02005—Preparing bulk and homogeneous wafers
- H01L21/02008—Multistep processes
- H01L21/0201—Specific process step
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
- H01L21/02005—Preparing bulk and homogeneous wafers
- H01L21/02008—Multistep processes
- H01L21/0201—Specific process step
- H01L21/02013—Grinding, lapping
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
- H01L21/02052—Wet cleaning only
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Abstract
The invention provides a method for mounting a sapphire wafer. In the wafer sorting thickness process, positive and negative BOW surfaces of the wafer are sorted firstly, and the positive BOW surface or the negative BOW surface is mounted on a machine in a unified direction to carry out copper polishing and chemical polishing processing on the unified negative BOW surface. The positive and negative BOW surfaces of the paster product without positive and negative BOW value division can be not unified in the processing process, the defective proportion of the positive BOW surface is more than or equal to 8 percent, after the paster product is subjected to face division and lamination, the BOW surface processing is carried out, the defective rate of the positive BOW surface can be greatly reduced, and the comprehensive defective rate is less than or equal to 2 percent.
Description
Technical Field
The invention relates to a process method for bonding wafers (comprising sapphire substrate sheets, monocrystalline silicon, silicon carbide and other hard and brittle materials).
Background
Sapphire is an ideal LED chip material as a hard material. As an ideal material of the LED, the material not only has good stability and can keep the stability at high temperature, but also has mature production technology and better device quality. Because the monocrystalline silicon and the silicon carbide substrate are easier to clean compared with each other, sapphire is mainly used as an ideal substrate material in the market at present.
However, in the actual production process, the production yield is high or low, and the control of the product surface type directly affects the cost of the LED chip and the product quality (quantum efficiency, light extraction efficiency, product power, etc.). Control during the processing of the material is therefore particularly important. In the initial stage of processing the substrate material, due to lack of verification, the annealed wafer is not subjected to surface division (positive and negative BOW) chip processing, so that the product + BOW defect is increased, and the surface type is difficult to control. The novel method adopts a surface-dividing attaching process, the surface-dividing treatment is carried out on the product in the annealing sheet sorting process, the surface mounting is uniformly carried out by + BOW surface attaching, and the-BOW surface processing is carried out at the rear section. The processing method can improve the overall yield by 1.5 percent.
Disclosure of Invention
The invention aims to provide a chip mounting method for improving the one-time through rate, increasing the consistency of BOW values of products and improving the overall production efficiency.
The technical scheme of the invention is as follows:
a method for sticking a sapphire wafer comprises the following steps:
(1) sorting the annealed wafer by thickness, dividing the wafer into one grade every 10um, and distinguishing products with positive BOW values and negative BOW values according to equipment measurement data;
(2) putting the product with distinguished BOW value into a material box with a negative BOW surface facing to the U surface of the wafer material box uniformly, and cleaning;
(3) after cleaning the product, keeping the uniform BOW value direction of the wafer, leading the negative BOW value downwards, and guiding the wafer into a piece mounting device to ensure that a positive BOW surface is attached to the ceramic disc during attachment;
(4) carrying out liquid wax pasting on the introduced wafer, wherein the pasting temperature is 300-;
(5) carrying out copper polishing on the bonded wafer by using 1.5-6um diamond liquid at the rotation speed of 30-70rpm and the pressure of 150-2Processing at 20-38 deg.C for 30-60 min;
(6) after the copper polishing is finished, the copper is brushed in a brushing machine with a ceramic disc, so that a water-based environment-friendly cleaning agent with the volume concentration ratio of 5-40% is used, the temperature is 50-85 ℃, and the brushing time is 30-120 s;
(7) directly feeding the cleaned wafer into a chemical polishing machine for polishing without removing the wafer, and using 20 wt% of aluminum oxide polishing solution to match with polishing cloth under the pressure of 300g/cm2-500g/cm2The rotating speed is 40-70rpm, the processing temperature is 30-50 ℃, and the processing time is 40-100 minutes.
The invention has the beneficial effects that: the invention mainly carries out surface mounting on the original positive and negative BOW surfaces, and carries out copper polishing and chemical polishing processing after surface mounting. And after improvement, in the process of wafer sorting thickness, sorting positive and negative BOW surfaces of the wafer, uniformly and directionally mounting the positive BOW surface or the negative BOW surface on a machine for carrying out uniform copper polishing and chemical polishing processing on the negative BOW surface. The method has the advantages that the positive and negative BOW surfaces are not unified in the processing process of the paster product without positive and negative BOW values, the defective proportion of the positive BOW surface is more than or equal to 8%, after the surface division laminating is carried out, the BOW surface processing is carried out, the defective rate of the positive BOW surface can be greatly reduced, and the comprehensive defective rate is less than or equal to 2%.
Detailed Description
The following further describes the specific embodiments of the present invention in combination with the technical solutions.
Examples
(1) Sorting: sorting the annealed wafer by thickness, dividing the wafer into one grade every 10um, and separating positive BOW products from negative BOW products, wherein the negative BOW products face the U surface of the jam uniformly;
(2) guiding a box: cleaning the sorted wafers (the cleaning temperature is 75 ℃) and then spin-drying (the spin-drying rotation speed is 800rpm), guiding the wafers into a piece sticking device with the U-shaped surface facing downwards, and keeping the positive BOW of the wafers after guiding upwards uniformly so as to facilitate waxing;
(3) surface mounting: after cleaning the product, keeping the uniform BOW value direction of the wafer, leading the negative BOW value downwards, and guiding the wafer into a piece mounting device to ensure that a positive BOW surface is attached to the ceramic disc during attachment; diameter of ceramic discThe wax dropping time is 1S, the rotating speed is 2000rpm, the baking temperature is 400 ℃, the baking time is 40S, and the thickness of a wax layer is less than or equal to 3 um;
(4) copper polishing: the bonded wafer is prepared from 5um diamond liquid at 50rpm and 200g/cm pressure2The processing temperature is 28 ℃, the thickness difference of the whole plate of the product after the product is discharged from the machine is less than 5um, and the TTV is less than or equal to 3 um;
(5) brushing: putting the whole copper product after being thrown off the machine on a ceramic disc brushing machine with a sheet, wherein the temperature of a cleaning agent is 75 ℃, the rotating speed of a brushing disc is 70rpm, the brushing time of the cleaning agent is 40s, and no diamond particles can be seen on the surface after brushing;
(6) chemical polishing: waxing and polishing the brushed product, putting the product on the finished polishing cloth by adopting an alumina polishing solution, setting the rotating speed at 50rpm, and carrying out polishingTablet pressure 400g/cm2Polishing temperature of 40 deg.C, processing time of 60 minutes, wafer thickness difference of less than or equal to 3 μm after processing, LTV (7mm × 7mm)<1.5μm。
(7) Uniformly cleaning the products after chemical polishing processing, and detecting by using a thickness classifier, wherein more than 98% of the products show negative BOW.
Claims (1)
1. A method for sticking a sapphire wafer is characterized by comprising the following steps:
(1) sorting the annealed wafer by thickness, dividing the wafer into one grade every 10um, and distinguishing products with positive BOW values and negative BOW values according to equipment measurement data;
(2) putting the product with distinguished BOW value into a material box with a negative BOW surface facing to the U surface of the wafer material box uniformly, and cleaning;
(3) after cleaning the product, keeping the uniform BOW value direction of the wafer, leading the negative BOW value downwards, and guiding the wafer into a piece mounting device to ensure that a positive BOW surface is attached to the ceramic disc during attachment;
(4) carrying out liquid wax pasting on the introduced wafer, wherein the pasting temperature is 300-;
(5) carrying out copper polishing on the bonded wafer by using 1.5-6um diamond liquid at the rotation speed of 30-70rpm and the pressure of 150-2Processing at 20-38 deg.C for 30-60 min;
(6) after the copper polishing is finished, the copper is brushed in a brushing machine with a ceramic disc, so that a water-based environment-friendly cleaning agent with the volume concentration ratio of 5-40% is used, the temperature is 50-85 ℃, and the brushing time is 30-120 s;
(7) directly feeding the cleaned wafer into a chemical polishing machine for polishing without removing the wafer, and using 20 wt% of aluminum oxide polishing solution to match with polishing cloth under the pressure of 300g/cm2-500g/cm2The rotating speed is 40-70rpm, the processing temperature is 30-50 ℃, and the processing time is 40-100 minutes.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910946951.0A CN110729175A (en) | 2019-10-07 | 2019-10-07 | Method for sticking sapphire wafer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910946951.0A CN110729175A (en) | 2019-10-07 | 2019-10-07 | Method for sticking sapphire wafer |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN110729175A true CN110729175A (en) | 2020-01-24 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201910946951.0A Pending CN110729175A (en) | 2019-10-07 | 2019-10-07 | Method for sticking sapphire wafer |
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Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2014100766A (en) * | 2012-11-20 | 2014-06-05 | Sharp Corp | Sapphire substrate |
| CN106392854A (en) * | 2015-07-29 | 2017-02-15 | 蓝思科技（长沙）有限公司 | Device and system used for sapphire product appearance polishing and polishing method |
| CN108214260A (en) * | 2016-12-22 | 2018-06-29 | 蓝思科技（长沙）有限公司 | A kind of polishing process of ultra-thin sapphire wafer |
| CN109732462A (en) * | 2018-12-28 | 2019-05-10 | 江苏澳洋顺昌集成电路股份有限公司 | A kind of processing method of large-sized wafer |
| CN109807695A (en) * | 2019-03-29 | 2019-05-28 | 苏州恒嘉晶体材料有限公司 | A kind of sapphire substrate sheet polishing method |
| CN109968191A (en) * | 2018-11-30 | 2019-07-05 | 浙江博蓝特半导体科技股份有限公司 | A kind of Sapphire Substrate pasting method |
-
2019
- 2019-10-07 CN CN201910946951.0A patent/CN110729175A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2014100766A (en) * | 2012-11-20 | 2014-06-05 | Sharp Corp | Sapphire substrate |
| CN106392854A (en) * | 2015-07-29 | 2017-02-15 | 蓝思科技（长沙）有限公司 | Device and system used for sapphire product appearance polishing and polishing method |
| CN108214260A (en) * | 2016-12-22 | 2018-06-29 | 蓝思科技（长沙）有限公司 | A kind of polishing process of ultra-thin sapphire wafer |
| CN109968191A (en) * | 2018-11-30 | 2019-07-05 | 浙江博蓝特半导体科技股份有限公司 | A kind of Sapphire Substrate pasting method |
| CN109732462A (en) * | 2018-12-28 | 2019-05-10 | 江苏澳洋顺昌集成电路股份有限公司 | A kind of processing method of large-sized wafer |
| CN109807695A (en) * | 2019-03-29 | 2019-05-28 | 苏州恒嘉晶体材料有限公司 | A kind of sapphire substrate sheet polishing method |
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