KR970008384A - Silicon Wafer Manufacturing Method And Its Apparatus - Google Patents

Silicon Wafer Manufacturing Method And Its Apparatus Download PDF

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KR970008384A
KR970008384A KR1019960019031A KR19960019031A KR970008384A KR 970008384 A KR970008384 A KR 970008384A KR 1019960019031 A KR1019960019031 A KR 1019960019031A KR 19960019031 A KR19960019031 A KR 19960019031A KR 970008384 A KR970008384 A KR 970008384A
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silicon wafer
grindstone
grinding
carrier
manufacturing
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KR100457718B1 (en
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케이이찌 타나카
오사무 카가야
토오루 하타나카
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나가사와 마사유키
미쯔비시마테리알실리콘 카부시키가이샤
아키모토 유우미
미쯔비시마테리알 카부시키가이샤
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/005—Control means for lapping machines or devices
    • B24B37/015—Temperature control
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/07—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool
    • B24B37/08—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool for double side lapping
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B28—WORKING CEMENT, CLAY, OR STONE
    • B28D—WORKING STONE OR STONE-LIKE MATERIALS
    • B28D1/00—Working stone or stone-like materials, e.g. brick, concrete or glass, not provided for elsewhere; Machines, devices, tools therefor
    • B28D1/003—Multipurpose machines; Equipment therefor
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B28—WORKING CEMENT, CLAY, OR STONE
    • B28D—WORKING STONE OR STONE-LIKE MATERIALS
    • B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002—Preparing wafers
    • H01L21/02005—Preparing bulk and homogeneous wafers
    • H01L21/02008—Multistep processes
    • H01L21/0201—Specific process step
    • H01L21/02019—Chemical etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002—Preparing wafers
    • H01L21/02005—Preparing bulk and homogeneous wafers
    • H01L21/02008—Multistep processes
    • H01L21/0201—Specific process step
    • H01L21/02024—Mirror polishing

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  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Chemical & Material Sciences (AREA)
  • Mining & Mineral Resources (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Grinding And Polishing Of Tertiary Curved Surfaces And Surfaces With Complex Shapes (AREA)
  • Grinding Of Cylindrical And Plane Surfaces (AREA)

Abstract

본 발명에 있어서는, 슬라이스후의 실리콘웨이퍼를 캐리어(14)의 원형구멍(15)에 삽입하고, 상측숫돌(13)과 하측숫돌(12) 사이에 실리콘웨이퍼를 협지해서 상측숫돌(13)과 하측숫돌(12)을 각각 소정의 속도로 회전시킨다. 이것에 의하면, 실리콘웨이퍼의 양면을 동시에 연삭한다. 이때, 상측숫돌(13)은, 소정의 하중으로 실리콘웨이퍼를 압압하면서, 예를 들면 100㎛ 하강시킨다. 또, 연삭액을 상측숫돌(13)의 개구부(13B)에 공급해서, 웨이퍼의 온도를 일정하게 제어한다. 상기한 공급된 연삭액은, 상ㆍ하 숫돌(13,12)의 원심력에 의해서 각 숫돌(13,12)의 연삭면의 홈을 지나서 실리콘웨이퍼의 양면의 전역에 상시 공급된다.In the present invention, the silicon wafer after slicing is inserted into the circular hole 15 of the carrier 14, and the silicon wafer is sandwiched between the upper grindstone 13 and the lower grindstone 12 so as to sandwich the upper grindstone 13 and the lower grindstone. Each of 12 is rotated at a predetermined speed. According to this, both surfaces of a silicon wafer are ground simultaneously. At this time, the upper grindstone 13 is lowered, for example, by 100 µm while pressing the silicon wafer under a predetermined load. Further, the grinding liquid is supplied to the opening 13B of the upper grindstone 13 to control the temperature of the wafer constantly. The above-mentioned supplied grinding liquid is always supplied through the grooves of the grinding surfaces of the grindstones 13 and 12 by the centrifugal force of the upper and lower grindstones 13 and 12 to the whole area of both surfaces of the silicon wafer.

Description

실리콘웨이퍼의 제조방법과 그 장치Silicon Wafer Manufacturing Method And Its Apparatus

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제1도는 본 발명의 일 실시예에 관한 양면 연삭장치의 전체구성도이고, 상측숫돌이 상승위치에 있는 상태를 가리키고 있다.1 is an overall configuration diagram of a double-sided grinding apparatus according to an embodiment of the present invention, and indicates the state where the upper grindstone is in the raised position.

Claims (20)

실리콘 단일결정봉을 슬라이스해서 실리콘웨이퍼를 제작하는 슬라이스공정과, 이 실리콘웨이퍼의 표리면을 동시에 연삭하는 양면 동시 연삭공정으로 이루어진 것을 특징으로 하는 실리콘웨이퍼의 제조방법.A method of manufacturing a silicon wafer, comprising a slice step of slicing a silicon single crystal rod to produce a silicon wafer, and a double-sided simultaneous grinding step of simultaneously grinding the front and back surfaces of the silicon wafer. 제1항에 있어서, 상기한 양면 동시 연삭공정에서는, 양면 연삭장치의 상측숫돌(13)과 하측숫돌(12) 사이에 실리콘웨이퍼를 협지시키고, 이 실리콘웨이퍼의 표리면을 동시에 연마할 때 이 실리콘웨이퍼의 표리면의 연역에 연삭액을 공급하는 것을 특징으로 하는 실리콘웨이퍼의 제조방법.The silicon wafer is sandwiched between the upper grindstone 13 and the lower grindstone 12 of the double-sided grinding device in the above-described double-sided simultaneous grinding step, and the silicon wafer is simultaneously polished when the front and back surfaces of the silicon wafer are polished. A method for producing a silicon wafer, characterized in that the grinding liquid is supplied to the deduction of the front and back surfaces of the wafer. 제1항에 있어서, 상기한 양면 동시 연삭공정에서는, 실리콘웨이퍼의 표리면의 온도를 제어하는 것을 특징으로 하는 실리콘웨이퍼의 제조방법.The method for manufacturing a silicon wafer according to claim 1, wherein in the double-sided simultaneous grinding step, the temperature of the front and back surfaces of the silicon wafer is controlled. 제2항에 있어서, 상기한 양면 동시 연삭공정에서는, 실리콘웨이퍼의 표리면의 온도를 제어하는 것을 특징으로 하는 실리콘웨이퍼의 제조방법.The method of manufacturing a silicon wafer according to claim 2, wherein the temperature of the front and back surfaces of the silicon wafer is controlled in the double-sided simultaneous grinding step. 제1항에 있어서, 상기한 양면 동시 연삭공정후에 실리콘웨이퍼에 에칭을 하고, 연삭손상을 제거하며, 다시 이 실리콘웨이퍼의 양면을 연마하는 것을 특징으로 하는 실리콘웨이퍼의 제조방법.The method of manufacturing a silicon wafer according to claim 1, wherein after the double-sided simultaneous grinding step, the silicon wafer is etched, the grinding damage is removed, and the both sides of the silicon wafer are polished again. 제2항에 있어서, 상기한 양면 동시 연삭공정후에 실리콘웨이퍼에 에칭을 하고, 연삭손상을 제거하여 다시 이 실리콘웨이퍼의 연마를 하는 것을 특징으로 하는 실리콘웨이퍼의 제조방법.The method of manufacturing a silicon wafer according to claim 2, wherein the silicon wafer is etched after the double-sided simultaneous grinding step, and the grinding damage is removed and the silicon wafer is polished again. 제3항에 있어서, 상기한 양면 동시 연삭공정후에 실리콘웨이퍼에 에칭을 하고, 연삭손상을 제거하며, 다시 이 실리콘웨이퍼의 양면을 연마하는 것을 특징으로 하는 실리콘웨이퍼의 제조방법.4. The method of manufacturing a silicon wafer according to claim 3, wherein the silicon wafer is etched after the double-sided simultaneous grinding step, the grinding damage is removed, and the both sides of the silicon wafer are polished again. 제4항에 있어서, 상기한 양면 동시 연삭공정후에 실리콘웨이퍼에 에칭을 하고, 연삭손상을 제거하며, 다시 이 실리콘웨이퍼의 양면을 연마하는 것을 특징으로 하는 실리콘웨이퍼의 제조방법.The method of manufacturing a silicon wafer according to claim 4, wherein the silicon wafer is etched after the double-sided simultaneous grinding step, the grinding damage is removed, and the both sides of the silicon wafer are polished again. 판형상의 상측숫돌(13)과 하측숫돌(12) 사이에 실리콘웨이퍼를 협지시키고 실리콘웨이퍼의 표리면을 동시에 연삭하는 양면연삭수단과, 이 양면연삭시의 실리콘웨이퍼의 표리면의 온도를 제어하는 온도제어수단을 구비한 것을 특징으로 하는 실리콘웨이퍼의 제조장치.Two-side grinding means for sandwiching the silicon wafer between the plate-shaped upper grindstone 13 and the lower grindstone 12 and simultaneously grinding the front and back surfaces of the silicon wafer, and the temperature for controlling the temperature of the front and back surfaces of the silicon wafer during this two-side grinding process. An apparatus for manufacturing a silicon wafer, comprising a control means. 제9항에 있어서, 상기한 온도제어수단은, 양면 연삭수단으로 연삭중의 실리콘웨이퍼의 표리면의 영역에 연삭액을 공급함으로써 그 온도를 제어하는 것을 특징으로 하는 실리콘웨이퍼의 제조장치.The apparatus for manufacturing a silicon wafer according to claim 9, wherein the temperature control means controls the temperature by supplying a grinding liquid to the area of the front and back surfaces of the silicon wafer during grinding by the double-sided grinding means. 제10항에 있어서, 상기한 온도제어수단은, 상기한 상측숫돌(13)과, 상기한 하측숫돌(12)의 각내주면에 의해서 획성된 워터팬(W)과, 상기한 상측숫돌(13) 및 상기한 하측숫돌(12)에 각각 형성된 각각의 연삭면으로부터 연삭액을 유출시키기 위한 연삭액 통로와, 상기한 워터팬(W)과 상기한 연삭액 통로에 연삭액을 공급하기 위한 연삭액 공급수단으로 구성되어 있는 것을 특징으로 하는 실리콘웨이퍼의 제조장치.12. The water grinder according to claim 10, wherein the temperature control means includes a water fan (W) formed by the upper inner grindstone (13), an inner circumferential surface of the lower grindstone (12), and the upper grindstone (13). And a grinding liquid passage for flowing the grinding liquid from each of the grinding surfaces respectively formed in the lower grindstone 12, and a grinding liquid supply for supplying the grinding liquid to the water pan W and the grinding liquid passage. An apparatus for producing a silicon wafer, comprising a means. 제9항에 있어서, 양면 연삭수단은, 서로 평행상태로 수평하게 배치되고, 서로 대향하는 표면이 연삭면으로 되어 있으며, 또한 상기한 연삭면에 있어서 상기한 실리콘웨이퍼의 표리면을 각각 연삭하는 상측숫돌(13) 및 하측숫돌(12)과, 상기한 상측숫돌(13) 및 상기한 실리콘웨이퍼를 수평면내에서 상대운동시키는 동시에, 상기한 하측숫돌(12) 및 상기한 실리콘웨이퍼를 수평면내에서 서로 상대운동시키기 위한 상대운동수단과, 상기한 상측숫돌(13)을 상기한 하측숫돌(13)에 재치된 실리콘웨이퍼에 압압시키기 위한 압압수단으로 구성되어 있는 것을 특징으로 하는 실리콘웨이퍼의 제조장치.10. The upper side according to claim 9, wherein the double-sided grinding means are arranged horizontally in parallel to each other, and the surfaces facing each other are a grinding surface, and the upper and the rear surfaces of the silicon wafer are ground on the grinding surface, respectively. The grindstone 13 and the lower grindstone 12, the upper grindstone 13 and the silicon wafer are moved relative to each other in a horizontal plane, and the lower grindstone 12 and the silicon wafer are mutually moved in a horizontal plane. An apparatus for manufacturing a silicon wafer, comprising: a relative movement means for relative movement, and pressing means for pressing the upper grindstone (13) to a silicon wafer placed on the lower grindstone (13). 제10항에 있어서, 상기한 양면 연삭수단은, 서로 평행상태로 수평으로 배치되고, 서로 대향하는 표면이 연삭면으로 되어 있으며, 또한 상기한 연삭면에 있어서 상기한 실리콘웨이퍼의 표리면을 각각 연삭하는 상측숫돌(13) 및 하측숫돌(12)과, 상기한 상측숫돌(13) 및 상기한 실리콘웨이퍼를 수평면내에서 서로 상대운동시키는 동시에, 상기한 하측숫돌(12) 및 상기한 실리콘웨이퍼를 수평면내에서 상대운동시키기 위한 상대운동수단과, 상기한 상측숫돌(13)을 상기한 하측숫돌(12)에 재치된 실리콘웨이퍼에 압압시키기 위한 압압수단으로 구성되어 있는 것을 특징으로 하는 실리콘웨이퍼의 제조장치.The said double-sided grinding means is arrange | positioned horizontally in parallel with each other, The surface which mutually opposes is a grinding surface, The grinding surface of the said silicon wafer is ground in the said grinding surface, respectively. The upper grindstone 13 and the lower grindstone 12 and the upper grindstone 13 and the silicon wafer are moved relative to each other in a horizontal plane, and the lower grindstone 12 and the silicon wafer are horizontal to each other. Manufacture of a silicon wafer, characterized in that it comprises a relative movement means for relative movement in the inside, and pressing means for pressing the upper grindstone 13 to the silicon wafer placed on the lower grindstone 12. Device. 제11항에 있어서, 상기한 양면연삭수단은, 서로 평행상태로 수평으로 배치되고, 서로 대향하는 표면이 연삭면으로 되어 있으며, 또한 상기한 연삭면에 있어서 상기한 실리콘웨이퍼의 표리면을 각각 연삭하는 상측숫돌(13) 및 하측숫돌(12)과, 상기한 상측숫돌(13)과 상기한 실리콘웨이퍼를 수평면내에서 서로 상대운동시키기 위한 상대운동수단과, 상기한 상측숫돌(13)을 상기한 하측숫돌(12)에 재치된 실리콘웨이퍼에 압압시키기 위한 압압수단으로 구성되어 있는 것을 특징으로 하는 실리콘웨이퍼의 제조장치.The said double-sided grinding means is arrange | positioned horizontally in parallel with each other, The surface which mutually opposes is a grinding surface, The grinding surface of each said silicon wafer is ground in the said grinding surface, respectively. The upper grindstone (13) and the lower grindstone (12), relative movement means for relative movement of the upper grindstone (13) and the silicon wafer to each other in a horizontal plane, and the upper grindstone (13) An apparatus for manufacturing a silicon wafer, characterized by comprising pressing means for pressing the silicon wafer placed on the lower grindstone (12). 제9항에 있어서, 상기한 실리콘웨이퍼는, 외주톱니를 구비한 캐리어(14)에 유지되고, 한편, 상기한 상측숫돌(13)과 상기한 하측숫돌(12)은, 각각의 중앙부분에 개구부를 구비하고 있으며, 상기한 상대운동수단은, -상기한 캐리어(14)의 상기한 외주톱니에 맞물리도록 상기한 개구부에 설치된 태양기어(12A)와, -상기한 캐리어(14)의 상기한 외주톱니에 맞물리도록 상기한 상측숫돌(13)과, 상기한 하측숫돌(12)의 외부쪽에 설치되고, 상기한 캐리어(14)를 상기한 태양기어(12A)의 둘레에서 공전과 자전을 시키기 위한 링형상 내주기어(17)와, -상기한 태양기어(12A)와, 상기한 링형상의 내주기어(17)를 회전시키기 위한 구동기어로 구성되어 있는 것을 특징으로 하는 실리콘웨이퍼의 제조장치.The said silicon wafer is hold | maintained in the carrier 14 provided with outer periphery teeth, The said upper grindstone 13 and the said lower grindstone 12 are opening parts in the center part, respectively. And the relative movement means comprises:-a sun gear (12A) provided in the opening so as to engage with the outer peripheral teeth of the carrier (14); and-the outer circumference of the carrier (14). A ring for installing the upper grindstone 13 and the lower grindstone 12 so as to engage with the teeth and for rotating and rotating the carrier 14 around the sun gear 12A. An apparatus for manufacturing a silicon wafer, comprising a shape inner cycle gear (17), a sun gear (12A), and a drive gear for rotating the ring shape inner cycle gear (17). 제10항에 있어서, 상기한 실리콘웨이퍼는, 외주톱니를 구비한 캐리어(14)에 유지되고, 한편, 상기한 상측숫돌(13)과 상기한 하측숫돌(12)은, 각각의 중앙부에 개구부를 구비하고 있으며, 상기한 상대운동수단은, -상기한 캐리어(14)의 상기한 외주톱니에 맞물리도록 상기한 개구부에 설치된 태양기어(12A)와, -상기한 캐리어(14)의 상기한 외주톱니에 맞물리도록 상기한 상측톱니와, 상기한 하측톱니의 외부쪽에 설치되어서, 상기한 캐리어(14)를 상기한 태양기어(12A)의 둘레에서 공전과 자전을 시키기 위한 링형상의 내주기어(17)와, -상기한 태양기어(12A) 및 상기한 링형상의 내주기어(17)를 회전시키기 위한 구동기구로 구성되어 있는 것을 특징으로 하는 실리콘웨이퍼의 제조장치.The said silicon wafer is hold | maintained in the carrier 14 provided with outer periphery teeth, The said upper grindstone 13 and the said lower grindstone 12 have opening parts in the center part, respectively. The relative movement means comprises:-a sun gear 12A provided in the opening so as to engage the outer circumferential teeth of the carrier 14; and-the outer circumferential teeth of the carrier 14 described above. A ring-shaped inner cycle gear 17 provided on the outer side of the upper teeth and the lower teeth so as to engage with each other so as to revolve and rotate the carrier 14 around the sun gear 12A. And a drive mechanism for rotating the sun gear (12A) and the ring-shaped inner cycle gear (17) described above. 제11항에 있어서, 상기한 실리콘웨이퍼는, 외주톱니를 구비한 캐리어(14)에 유지되고, 한편, 상기한 상측숫돌(13)과 상기한 하측숫돌(12)은, 각각의 중앙부에 개구부를 구비하고 있으며, 상기한 상대운동수단은, -상기한 캐리어(14)의 상기한 외주톱니에 맞물리도록 상기한 개구부의 설치된 태양기어(12A)와, -상기한 캐리어(14)의 상기한 외주톱니에 맞물리도록 상기한 상측숫돌(13)과, 상기한 하측숫돌(12)의 외주쪽에 설치되어서, 상기한 캐리어(14)를 상기한 태양기어(12A)의 둘레에서 공전과 자전을 시키기 위한 링형상 내주기어(17)와, -상기한 태양기어(12A)와, 상기한 링형상 내주기어(17)를 회전시키기 위한 구동기어로 구성되어 있는 것을 특징으로 하는 실리콘웨이퍼의 제조장치.The said silicon wafer is hold | maintained in the carrier 14 provided with the outer tooth, The said upper grindstone 13 and the said lower grindstone 12 have opening parts in the center part, respectively. And said relative movement means comprises:-a sun gear 12A provided in said opening so as to engage said outer peripheral teeth of said carrier 14, and-said outer peripheral teeth of said carrier 14; A ring shape is provided on the outer circumferential side of the upper grindstone 13 and the lower grindstone 12 so as to engage with the gear, so that the carrier 14 rotates and rotates around the sun gear 12A. A device for manufacturing a silicon wafer, characterized by comprising an inner cycle gear (17), a sun gear (12A), and a drive gear for rotating the ring-shaped inner cycle gear (17). 제12항에 있어서, 상기한 실리콘웨이퍼는 외주톱니를 구비한 캐리어(14)에 유지되고, 한편, 상기한 상측숫돌(13)과 상기한 하측숫돌(12)은, 각각의 중앙부에 개구부를 구비하고 있으며, 상기한 상대운동수단은, -상기한 캐리어(14)의 상기한 외주톱니에 맞물리도록 상기한 개구부에 설치된 태양기어(12A)와, -상기한 캐리어(14)의 상기한 외주톱니에 맞물리도록 상기한 상측숫돌(13)과, 상기한 하측숫돌(12)의 외부쪽으로 설치되어서, 상기한 캐리어(14)를 상기한 태양기어(12A)의 둘레에서 공전과 자전을 시키기 위한 링형상 내주기어(17)와, -상기한 태양기어(12A)와, 상기한 링형상 내주기어(17)를 회전시키기 위한 구동기어로 구성되어 있는 것을 특징으로 하는 실리콘웨이퍼의 제조장치.13. The silicon wafer according to claim 12, wherein the silicon wafer is held in a carrier 14 having outer teeth, while the upper grindstone 13 and the lower grindstone 12 have openings in their respective centers. The relative movement means is a sun gear (12A) provided in the opening so as to engage the outer peripheral teeth of the carrier 14, and the outer peripheral teeth of the carrier (14). A ring-shaped inner circumference is provided on the outer side of the upper grindstone 13 and the lower grindstone 12 so as to engage with each other, so that the carrier 14 rotates and rotates around the sun gear 12A. An apparatus for manufacturing a silicon wafer, comprising a gear (17), a sun gear (12A), and a drive gear for rotating the ring-shaped inner cycle gear (17). 제9항에 있어서, 상기한 캐리어(14)의 상기한 태양기어(12A)측 끝부의 상하면을 끼워서 지지하기 위한 상하 한쌍의 스페이서를 구비하고 있는 실리콘웨이퍼의 제조장치.10. The apparatus for manufacturing a silicon wafer according to claim 9, further comprising a pair of upper and lower spacers for sandwiching and supporting the upper and lower surfaces of the end portion of the solar gear (12A) side of the carrier (14). 제10항에 있어서, 상기한 캐리어(14)의 상기한 태양기어(12A)측 끝부의 상하면을 끼워서 지지하기 위한 상하 한쌍의 스페이서를 구비하는 있는 것을 특징으로 하는 실리콘웨이퍼의 제조장치.11. The apparatus for manufacturing a silicon wafer according to claim 10, further comprising a pair of upper and lower spacers for sandwiching and supporting the upper and lower surfaces of the end of the solar gear (12A) side of the carrier (14). ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019960019031A 1995-07-03 1996-05-31 Method and apparatus for manufacturing silicon wafer KR100457718B1 (en)

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