CN1145531A - Method and appts. for making silicon chip - Google Patents
Method and appts. for making silicon chip Download PDFInfo
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- CN1145531A CN1145531A CN96110121A CN96110121A CN1145531A CN 1145531 A CN1145531 A CN 1145531A CN 96110121 A CN96110121 A CN 96110121A CN 96110121 A CN96110121 A CN 96110121A CN 1145531 A CN1145531 A CN 1145531A
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/005—Control means for lapping machines or devices
- B24B37/015—Temperature control
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/07—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool
- B24B37/08—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool for double side lapping
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D1/00—Working stone or stone-like materials, e.g. brick, concrete or glass, not provided for elsewhere; Machines, devices, tools therefor
- B28D1/003—Multipurpose machines; Equipment therefor
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
- H01L21/02005—Preparing bulk and homogeneous wafers
- H01L21/02008—Multistep processes
- H01L21/0201—Specific process step
- H01L21/02019—Chemical etching
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
- H01L21/02005—Preparing bulk and homogeneous wafers
- H01L21/02008—Multistep processes
- H01L21/0201—Specific process step
- H01L21/02024—Mirror polishing
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- Microelectronics & Electronic Packaging (AREA)
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- Condensed Matter Physics & Semiconductors (AREA)
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- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Mining & Mineral Resources (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Grinding And Polishing Of Tertiary Curved Surfaces And Surfaces With Complex Shapes (AREA)
- Grinding Of Cylindrical And Plane Surfaces (AREA)
Abstract
In present invention, a sliced silicon wafer is inserted into a disc hole 15 of a carrier 14 and pinched between an upper grinding wheel 13 and a lower grinding wheel 12, and the upper grinding wheel 13 and the lower grinding wheel 12 are respectively rotated at specified speed. Therefore, both surfaces of the silicon wafer are simultaneously ground. In this case, the upper grinding wheel 13 is lowered by 100 Mu m while pressing the silicon wafer with the specified load. Grinding liquid is supplied to an opening part 13B of the upper grinding wheel 13, and the temperature of the wafer is controlled constant. The supplied grinding liquid is always supplied to the whole range of both surfaces of the silicon wafer through grooves of the grinding surfaces of respective grinding wheels 13, 12 by centrifugal force of the upper and lower grinding wheels 13, 12.
Description
The invention relates to the method and the manufacturing installation of the large-diameter silicon wafer of making highly integrated device, particularly, two sides in the table of silicon chip is carried out simultaneously the manufacturing technology of grinding.
In the manufacture method of silicon chip, be cylindrical silicon single crystal rod to be cut earlier and obtain silicon wafer with the interior Zhou Ren of stainless steel, grind its two surface with free abrasive particle again on grinder, the uneven and damage that is produced to remove in the slice process also improves its depth of parallelism.The affected layer (affected layer) that this silicon chip forms in the time of will removing attrition process with etch carries out mirror finish with chemical mechanical polishing method again.
Yet, remove the surface damage layer that produces because of attrition process, can increase to for example degree of 20 μ m as etching and processing surplus (allowance) with etch, therefore the above allowance of 30 μ m must be arranged.Consequently make concavo-convex (flatness) of erosional surface also to increase to for example degree of 1 μ m.And then the amount of grinding after the corrosion for example also becomes more than the 10 μ m, makes flatness degenerate (for example, being the degree of TTV (Totalthickness variation) 2.81 μ ms shown in the image pattern 13).
In recent years, silicon chip diameter 150mm and 200mm person popularize, also at the silicon chip that continues exploitation 300mm, and make device highly integrated, for example beginning that its live width yardstick and the depth of focus are respectively 0.18 μ m and 0.7 μ m among the DRAM of 1G position of actual use in calendar year 2001.Desired for this reason flatness must reach SFQD (Site, Front surface-reference, site least squares, deviation) flatness that on 26 * 32mm area is 0.12 μ m is (referring to " THE NATIONAL TECHNOLOGY ROADMAP FORSEMICONDUCTORS ", 1994, SEMICONDUCTOR INDUSTRY ASSOCIATION published; The 113rd page), and wafer diameter is big more, even little by little curvature also can make its warpage quantitative change become serious problem greatly.That is, concavo-convex warpage not only produces in fabrication stage of silicon chip, also can take place when the film forming of device fabrication, the heat treatment of universe burn into.So if use the little silicon chip of warpage, the warpage in each stage just can be particular value.That is,,, can only manage as the manufacture method of the little silicon chip of warpage because the warpage of silicon chip on deformed appearances under the deadweight drops to below half for example external diameter 300mm silicon chip being placed on the square position when measuring its warpage.
For flatness is improved more, consider to replace attrition process, and use the grinding of damage below 3 μ m the wafer surface after the slice processing, and then, thickness after the section is 800 μ m for the thin 700 μ m of silicon chip of 150mm diameter to the 200mm silicon chip, the then thin 900 μ m of 300mm silicon chip.
, employed so far grinding machine has circular grinding sword, and as shown in Figure 14, only arrangement is fixed on silicon chip 32 on the vacuum cup 31 and carries out single face (among the figure top) and carry out grinding.
That is, shown in Figure 14 A, silicon chip 32 is placed on the vacuum cup 31; When this silicon chip 32 is carried out the single face grinding, as shown in Figure 14 B, when with vacuum cup 31 with vacuum suction below the silicon chip 32 after since as mentioned above silicon chip 32 just be drawn onto vacuum cup 31 one side as thin as a wafer, make to have become flat surfaces below above-mentioned.Chain-dotted line 33 expression grinding faces, so just shown in Figure 14 C, discharged the vacuum suction of vacuum cup 31 after the grinding, the adsorption plane of silicon chip 32 (following) makes the grinding face reverse side become convex with regard to returning to the original form.That is, the cut surface that carries out vacuum suction has become the reverse side that is replicated.And then, the grinding face vacuum suction and during its reverse side of grinding, its recess has been duplicated into protuberance after discharging vacuum suction, just remain in the shape of section inside the table of silicon chip on.Therefore, also must make slight attrition process (the application spy referring to the applicant opens flat 6-104229 communique) after the grinding, just can not fully obtain the effect that reduces affected layer by grinding.
For this reason, open the spy of the applicant application and to disclose in the clear 62-964000 communique after the blank end face big to rigidity carries out grinding, carrying out cutting processing cuts into slices silicon chip, its grinding face of vacuum suction and the method for its cutting processing face of grinding makes in this way and can make the silicon chip that the depth of parallelism is good and camber is little again.
In addition, when carrying out cutting processing with interior Zhou Ren for the heavy caliber blank of external diameter 200mm, in it sword of Zhou Ren thick be 0.38 μ m, and owing to the major diameter blank of external diameter 300mm is not carried out incisory major diameter corrosion resistant plate, so can not carry out interior all sword cutting processing.Therefore, in fact to use scroll saw.The line of scroll saw directly is 0.18 μ m, can make kerf loss (cut-out allowance) little, and rate of finished products improves.Yet the section of scroll saw be because the vibration of line can produce big concavo-convex of cut surface than interior Zhou Ren, and causes step owing to needing scroll saw oppositely to send in cutting.In addition, directly can be at the cutting center line because of wearing and tearing attenuate, thus can make the final cutting part thickening of silicon chip 34 as shown in Figure 15, thus on two face 34a of silicon chip 34 and 34b, form tapering.Thereby when scroll saw face vacuum suction was carried out grinding, axially crystal plane can be to about 0.02 °～0.05 ° of specified angle deflection.
In order to make the high integrated device more than the 1G position, the inside of silicon chip is ground, improved the flatness of the inside benchmark, also make the occurring in below 1/10 of particle therefrom.For this reason, open to disclose in the flat 6-104229 communique above-mentioned spy and carry out the technology that grind simultaneously on the inside semipolish or two sides.
Consider that an above-mentioned single face has following improper part when carrying out grinding.That is, residual on the two sides of silicon chip have cut surface to duplicate vestige, can not convert attrition process to.In addition, because the allowance of corrosion thereafter and cmp becomes big, be difficult to obtain desired flatness.And, be difficult to accomplish to make the degree of finish unanimity on two sides, be easy to take place warpage again.
The purpose of this invention is to provide a kind of two sides method for grinding and device that replaces attrition process, the high flatness silicon chip that meets the requirements when making it to make particularly the high integrated device more than making the 1G position.Its purpose also is to provide a kind of can reduce the corrosion processing surplus, lowers the two sides method for grinding and the device of amount of grinding.And then, the present invention also aims to provide a kind of two sides method for grinding and device that prevents crack of silicon chip.
The present invention is a kind of silicon chip manufacture method, and it comprises the slicing process of making silicon chip that silicon single crystal rod is cut, and to the two sides of the grinding simultaneously of two sides in this silicon chip table grinding process simultaneously.
In the above-mentioned two sides while grinding process of the present invention, wafer chuck is held between the upper and lower grinding tool of double-side grinding apparatus, the gamut when grinding is carried out simultaneously in the two sides in to the silicon chip table inside the table of this silicon chip is supplied with grinding fluid.
And then the present invention also controls the temperature inside the table of silicon chip in two sides grinding process of above-mentioned while.
And the present invention is corroded silicon chip behind above-mentioned two sides while grinding process and is removed grinding damage, the silicon chip two sides is ground again.
So, the invention provides a kind of silicon chip manufacturing installation, it be provided with wafer chuck is held in tabular on the double-side grinding apparatus of the silicon chip of grinding simultaneously table the inside under the state between grinding tool and the following grinding tool, and the temperature control equipment of silicon chip table temperature inside during the grinding of control two sides.
Said temperature control device of the present invention is by controlling its temperature to supplying with grinding fluid in the gamut of the inside of the silicon chip table in the grinding in double-side grinding apparatus.
And then said temperature control device of the present invention is the sap cavity that each inner peripheral surface constituted that comprises above-mentioned upper and lower grinding tool, on above-mentioned upper and lower grinding tool, form respectively flow out the grinding fluid passage of usefulness and supply the grinding fluid feedway of grinding fluid and constitute from grinding face separately for grinding fluid to above-mentioned sap cavity and above-mentioned grinding fluid passage.
In addition, the structure of above-mentioned double-side grinding apparatus of the present invention comprises: go up grinding tool and following grinding tool, they are horizontal arrangement in parallel to each other, as grinding face, and carries out grinding inside the table to the above-mentioned silicon chip on above-mentioned grinding face respectively with the apparent surface.
The relative motion device is used to make and above-mentionedly goes up grinding tool and above-mentioned silicon chip is done relative motion in horizontal plane, and above-mentioned grinding tool down and above-mentioned silicon chip in horizontal plane, do relative motion and
Make the above-mentioned device for exerting that grinding tool is pushed the silicon chip that is placed on the above-mentioned grinding tool down of going up.
Among the present invention, above-mentioned silicon chip remains on the pallet that is provided with outer peripheral teeth, and on the central part separately of above-mentioned upper and lower grinding tool peristome is set.
The structure of above-mentioned relative motion device comprises:
Central gear, it is located in the above-mentioned peristome and the engagement of the outer peripheral teeth of above-mentioned pallet,
The ring-type ring gear, it be located at above-mentioned go up grinding tool and down grinding tool the outside and with the outer peripheral teeth engagement of above-mentioned pallet, make above-mentioned pallet around above-mentioned central gear revolution the time, do revolution and rotation,
The driving mechanism that above-mentioned central gear and above-mentioned ring-type ring gear are rotated.
In addition, the present invention also is provided with the upper and lower a pair of distance piece in the top and bottom of the end of above-mentioned central gear side that clamps above-mentioned pallet.
Below, effect of the present invention is described.
Owing to do not grind, compare the silicon chip that can obtain high flatness with the silicon chip after the attrition process.As a result, compare with grinding silicon chip, the corrosion processing surplus of this silicon chip reduces.Concavo-convex also little when grinding of the erosional surface of this moment.And then after making in the grinding of operation, as long as very little amount of grinding.
If again the present invention is compared with the situation of only carrying out the single face grinding, on its silicon chip surface not residual duplicate cut surface and form concavo-convex.So the silicon chip after the grinding just needn't grind and can corrode.In addition, the damage that produces because of attrition process only remaining its about 1/10, the corrosion processing surplus is diminished, can prevent significantly that the flatness that causes because of etching process from descending,
Owing to is feature, so need not place material (silicon chip) side to the datum level when processing elastomeric silicon chip with the two sides grinding.Its grinding datum level is to be made of the activity imaginary plane (practical function face) at the grinding face (price fixing face) of device side.Yet, be that the rigidity because of material changes.Now the pattern that is shaped as sinusoidal surfaces with silicon chip surface is studied various fine-processing techniques.
Shown in Fig. 8 A, the surface of the silicon chip 30 that cuts out has concavo-convex respectively, and this is concavo-convex as shown in Fig. 8 B and 8C, is made of " thickness composition " and " ripple composition ".And the ripple composition is the mid line of wafer table the inside.
The silicon chip 30 of Fig. 8 D is carried out then shown in Fig. 8 F, will forming the surface (duplicating referred to herein as the inside) similar in appearance to the male and fomale(M﹠F) of non-process side after single-sided process makes its consistency of thickness (referring to Fig. 8 E).
In addition, pressurizeed in the silicon chip two sides, and after on the two sides, processing simultaneously (referring to Fig. 8 G), the two sides of thick part processed (referring to Fig. 8 H), though the concavo-convex of thickness composition is removed, at its reverse side, because silicon chip is an elastomer, so after tonnage after the processing discharges, will be just like the still remaining danger that the ripple composition is arranged shown in Fig. 8 I.
As mentioned above, use silicon chip manufacture method of the present invention,, come so can produce the silicon chip of the high depth of parallelism, high flatness owing to be that grinding is carried out on the two sides.And, can prevent that upper and lower grinding tool temperature from rising man-hour adding, accomplish stock removal unanimity in the whole silicon wafer field, whole silicon wafer is formed flatly and does not produce warpage.Like this, after the grinding of two sides, remove grinding damage and carry out the grinding of single-surface mirror face by corrosion, the silicon chip that just can produce the single face grinding comes.In addition, carry out the two sides simultaneously by two sides in the wafer table after the grinding of two sides and grind, just can make the silicon chip that grind on the two sides.
And then, because the affected layer of the silicon chip after the grinding of two sides is little, use the slow cmp of process velocity also can remove affected layer, grind simultaneously, just can remove grinding damage and can make the silicon chip that grinds on the two sides economically next by two sides in the inside semipolish or the table.
Fig. 1 is the overall structure figure of the double-side grinding apparatus of one embodiment of the invention, wherein shows the state that the upside grinding tool is in lifting position.
Fig. 2 is the overall structure figure of the double-side grinding apparatus of one embodiment of the invention, and the grinding tool of upside shown in it is in the down position state.
Fig. 3 is the major part stereogram of the double-side grinding apparatus of one embodiment of the invention.
Fig. 4 is the major part plane graph of the double-side grinding apparatus of one embodiment of the invention.
Fig. 5 is the major part skiagraph of the double-side grinding apparatus of one embodiment of the invention.
Fig. 6 is upside grinding tool plane.
Fig. 7 is a downside grinding tool plane graph.
Fig. 8 A～8I is the key diagram that the flatness of explanation silicon chip improves.
Fig. 9 A and Fig. 9 B are respectively the flow charts of explanation prior art and manufacturing process of the present invention.
Figure 10 is expression one embodiment of the invention two sides grinding result's a curve chart.
Figure 11 is expression one embodiment of the invention two sides grinding result's a curve chart.
Figure 12 is the ideograph of expression one embodiment of the invention two sides grinding result's surface state.
Figure 13 is the ideograph same with Fig. 5 of expression silicon chip surface state in the past.
The ideograph of the surface state that Figure 14 A, 14B and 14C are expressions when after the silicon chip vacuum suction it being carried out the single face grinding.
Figure 15 is tapered silicon chip sketch map.
Below, with reference to description of drawings one embodiment of the invention.
Fig. 1 is the overall structure figure of the double-side grinding apparatus of one embodiment of the invention, its upside grinding tool is in the lifting position of back-off state, Fig. 2 is the overall structure figure of the double-side grinding apparatus of one embodiment of the invention, represent that its upside grinding tool is in the grinding state of decline, Fig. 3 is the stereogram of the double-side grinding apparatus major part of expression one embodiment of the invention, Fig. 4 is the plane graph of the double-side grinding apparatus major part of expression one embodiment of the invention, and Fig. 5 is the plane graph of expression one embodiment of the invention double-side grinding apparatus major part.
This double-side grinding apparatus is to use two sides in the table that remains on the silicon chip 1 on the pallet (pallet apparatus) 14 discoideus upside grinding tool (going up price fixing) 13 and downside grinding tool (following price fixing) 12 to carry out grinding simultaneously respectively.Grinding tool 13 moves up and down and around rotational, then drives following grinding tool 12 on the other hand and make it around its rotational in the driving.
Supporting the following disk drive shaft 5 that vertical direction is extended by bearing 16 on the device body 3, making it free to rotate, less bottom 5a of diameter of disk drive shaft 5 becomes the coaxial belt pulley installation portion that belt pulley not shown in the figures is installed integratedly under this.By the belt (not shown) rotation of drive motor not shown in the figures is uploaded to above-mentioned belt pulley, just can makes down disk drive shaft 5 around its rotational.The upper end has the central gear driving shaft 4 of central gear 12A can be supported in freely to rotate on the above-mentioned disk drive shaft 5 down.Central gear driving shaft 4 extends along vertical direction, its bottom becomes the coaxial belt pulley installation portion that belt pulley not shown in the figures is installed integratedly, by the belt (not shown) this belt pulley is passed in the rotation of drive motor not shown in the figures, thereby made central gear driving shaft 4 around its rotational.
In addition, the driving shaft 25 with gear 26 is supported on the device body 3 free to rotately, by gear 26 ring-type internal gear described later (ring gear) 17 is rotated, and makes driving shaft 25 around himself rotational by drive motor not shown in the figures.And then drive motor and the drive motor that central gear driving shaft 4 is rotated etc. have constituted driving mechanism thus.Discoid bearing (lower wall) 11 is fixed on the above-mentioned disk drive shaft 5 down by discoid distance piece 24, and following discoid grinding tool 12 down is horizontally fixed on this bearing 11.
In addition, dish is gone up in Reference numeral 2 expression, on be supported on the bar 9a of the drive unit (for example oil cylinder) 9 that is fixed on the said apparatus body 3 with coiling 2 one-tenth levels.Discoideus go up grinding tool 13 by connector 7 and be installed in with going up 6 one-tenths levels of grinding tool distance piece coil on this 2 below.Be supported with respect to last dish 2 with the discoid grinding tool distance piece 6 of going up of last grinding tool 13 all-in-one-pieces free to rotately, and on the periphery of last grinding tool distance piece 6, form outer peripheral teeth 6a.If the piston rod 9a of above-mentioned oil cylinder 9 is taken in, grinding tool 13 is risen (state of Fig. 1), if piston rod 9a is stretched out grinding tool 13 is descended, just can be with following grinding tool 12 to silicon chip 1 pressurization (state of Fig. 2).Like this, just last grinding tool 13 is arranged to state moving up and down by means of device for exerting (being to use the lowering or hoisting gear of oil cylinder 9 in this example).And then, for example can also adopt by tooth bar, the slide mechanism of formations such as pinion replaces the lowering or hoisting gear that constitutes with oil cylinder 9.
Configuration a plurality of (in this example being 3) discoideus pallet 14 between above-mentioned central gear 12A and ring-type ring gear 17, the outer peripheral teeth that forms on the pallet periphery respectively with interior all teeth engagement of central gear 12A and ring-type ring gear 17, that is, above-mentioned pallet 14 moves as planetary gear with respect to centre wheel 12A and ring-type ring gear 17.The accepting hole 15 that can hold 1 silicon chip 1 is set respectively on each pallet 14.These silicon chips 1 are contained in the accepting hole 15 of above-mentioned pallet 14 separately, and are mounted slidably at following grinding tool 12 respectively with its lower surface.And, make the thickness of pallet 14 littler than the thickness of silicon chip 1.In addition, the upper surface of these silicon chips 1 also becomes the state that can be free to slide mutually with last grinding tool 13.The central portion of last grinding tool 13 has peristome 13B, and the peristome 12B same with above-mentioned peristome 13B also arranged on the following grinding tool 12, and the external diameter of grinding tool 13,12 and internal diameter are the thin-walled plectanes that spheroidal graphite cast-iron is made each other about equally up and down.
As described above, silicon chip 1 installed and remain on these between the grinding tool 13 and following grinding tool 12, and grinding is carried out on the two sides in simultaneously it being shown.That is, silicon chip 1 is to remain on the pallet 14 of outer peripheral teeth, and forms the accepting hole (circular hole) 15 that can insert silicon chip 1 on pallet 14.And the outer peripheral teeth of pallet 14 also is engaged on interior all teeth of ring-type ring gear 17 when meshing with central gear 12.Ring-type ring gear 17 is bigger than the external diameter of following grinding tool 12, is configured to surround down the state of grinding tool 12.And then, though be 3 pallets 14 that respectively keep a silicon chip 1 are set in this example, and simultaneously 3 silicon chips 1 are carried out the two sides grinding, be not limited thereto.In addition, the grinding face of last grinding tool 13 (below) with the grinding face of following grinding tool 12 (above) on, each forms many radiation groove and the circumferential grooves that radially reach circumferential extension.
Below, the detailed structure of the major part of above-mentioned double-side grinding apparatus is illustrated.
As Fig. 1～shown in Figure 5, Reference numeral 12 is that mounting is as the following grinding tool that is ground the silicon chip 1 of thing.Grinding tool 12 is the disc that central authorities form the 12B of circular open portion (centre bore) under this, mounting is fixed on the above-mentioned bearing 11, Reference numeral 21a is mounted in down the septal branch gripping member on the disk drive shaft 5, and this interval body supporter 21a sleeve is on above-mentioned central gear driving shaft 4.And this interval body supporter 21a does not together rotate with following disk drive shaft 5.
Above-mentionedly go up grinding tool distance piece 6, go up grinding tool 13, top, the interval body supporter 21a of each inner peripheral surface and the following disk drive shaft 5 of grinding tool 12, bearing 11 and distance piece 24 reach sap cavity (space) W that the space that outer peripheral face surrounded of each interval body 13A, 12C up and down then becomes specified volume down.
Below with regard to the detailed structure of last grinding tool distance piece 6 and upper and lower grinding tool 13,12, attaching most importance to the grinding fluid passage is illustrated.
At first, as shown in Figure 1, form a plurality of (only illustrating 2 among the figure) through hole 18 that above-below direction connects on last grinding tool distance piece 6, they are circumferentially the arranging of grinding tool distance piece 16 (in this example for uniformly-spaced) regularly on above-mentioned.
As shown in Fig. 1 and Fig. 6, all sides form endless groove 19 on last grinding tool 13.The formation position of this endless groove 19 and the above-mentioned location overlap of going up grinding tool distance piece 6 through holes 18.In addition, also on last grinding tool 13, form an end respectively and communicate, and become to extend to radially roughly a plurality of (in this example being 8) radiation groove 20 of middle part of grinding tool 13 external diameter directions with above-mentioned endless groove 19.The other end of radiation groove 20 connects the through hole 21 of going up grinding tool 13 with above-below direction respectively and is communicated with.
In addition, as shown in Fig. 1 and Fig. 7, formation is from a plurality of radiation grooves 23 of the radial extension of its inwall below following grinding tool 12.Each radiates groove 23 perimembranous in the following grinding tool 12 and extends to radially about middle part, and each end that radiates groove 23 is communicated with a plurality of through holes 22 of grinding tool 12 under the up/down perforation respectively.
In Fig. 2 and 5, the flow regime of grinding fluid is shown with thick arrow.Promptly, be conducted to the grinding fluid of above-mentioned sap cavity W from the top of last grinding tool 13, be conducted to its top and bottom from the outer circumferential side of the silicon chip 1 of 13,12 of upper and lower grinding tools, under the centrifugal action that produces when rotating in the horizontal plane of upper and lower grinding tool 13,12, this grinding fluid is fed to the outer circumferential side of upper and lower grinding tool 13,12.Therefore, grinding fluid is supplied on the silicon chip 1 top and bottom universe.
In addition, grinding fluid also is fed in a plurality of through holes 18 of grinding tool distance piece 6, the grinding fluid of confession flow through endless groove 19, radiation groove 20 and the through hole 21 of grinding tool 13 and be fed on about central part above the silicon chip 1.And then then the radiation groove 23 by following grinding tool 12 and through hole 22 are conducted on the position of the cardinal principle central authorities below the silicon chip 1 to be fed to grinding fluid among the above-mentioned sap cavity W.Whereby, just can control the temperature of whole silicon wafer 1 reliably.
Like this, in order to use this double-side grinding apparatus that grinding is carried out on two sides in the table of silicon chip the silicon chip after the cutting 1 is inserted in the accepting hole 15 of pallet 14, between last grinding tool 13 and following grinding tool 12, clamp silicon chip 1, with fixing speed grinding tool 13 and following grinding tool 12 are rotated in horizontal plane respectively.At this moment, last grinding tool 13 is being pressed under the regulation loading on the silicon chip 1, the value (for example, 100 μ m) of the regulation that only descends simultaneously.At this moment, from last grinding tool 13, constantly supply with grinding fluid, the temperature control of silicon chip 1 is remained on the certain value (for example, 25 ℃).Grinding fluid constantly is conducted to the central part of silicon chip 1 through the groove of each grinding face (radiation groove and circumferential groove) from sap cavity W.So, just the temperature of silicon chip central part is also remained on the certain value.As seen from the above description, temperature control equipment is made of with above-mentioned grinding fluid passage and sap cavity W above-mentioned grinding fluid feedway (nozzle etc.).
At length describe then and be, at first, silicon chip 1 is respectively charged in the accepting hole 15 of each pallet 14, it is placed in down on the grinding tool 12, depress from above grinding tool 13 make itself and each silicon chip 1 above join.Then, as mentioned above, grinding fluid is supplied on the upper and lower surface of silicon chip 1, central gear 12A and ring-type ring gear 17 are rotated on the direction of arrow in Fig. 4 respectively, then each pallet 14 will each autorotation on the direction of arrow in Fig. 4.Whereby, silicon chip 1 is drawn out the planetary gear road in horizontal plane, and simultaneously their lower surface is by top (grinding face) friction of grinding tool 12 down and carrying out grinding on the grinding tool 12 down.And then, rotate on the opposite direction of following grinding tool 12 by making grinding tool 13, use grinding tool 13 following (grinding face) friction silicon chip 1 upper surface and carry out grinding.
Can understand that by above-mentioned explanation the relative motion device is made of central gear 12A, central gear driving shaft 4, ring-type ring gear 17 and drive motor 8 etc.This relative motion device and last grinding tool 13 and following grinding tool 12 etc. have then constituted double-side grinding apparatus.
Fig. 9 A and 9B are respectively the flow charts of explanation prior art manufacturing process and operation of the present invention.
Past, when making silicon chip, at first, monocrystalline silicon blank cutting (step S1), again the silicon chip edging (step S2) that is cut into, the more a plurality of silicon chips that obtain like this being classified by the irregular size of thickness, (sorting in groups, step S3), the reason of carrying out this grouping is that its thickness is got over neat and consistent, can shorten process time described later more, grinds (step S4) simultaneously, cleans (step S5) then for the silicon chip of the every batch of consistency of thickness that comes out with its thickness sorting.This clean is a large amount of iron of producing for the wearing and tearing of grinding tool up and down of removing grinding agent and spheroidal graphite cast-iron system when grinding from silicon chip and iron ion and the brute force of carrying out is cleaned.Then, clean silicon chip (step S6), remove the damage that produces by above-mentioned edging by partial corrosion (Chemical Comer Rounding) again, after cleaning, corrode again with the highly basic interfacial agent.
Correspondingly thereto, then as shown in Fig. 9 B, behind for example cut into slices (step S10) and edging (step S11), do not carry out above-mentioned sorting in groups, but side by side carry out two sides grinding (step S12) in the present invention with scroll saw.Needn't carry out sorting is because two sides while grinding energy carries out the depth of parallelism that grinding can reach the two sides at short notice to the two sides of silicon chip simultaneously in groups.
Because without grinding agent, thus clean immediately after the grinding as mentioned above also just unnecessary.(step S13) carries out CCR and cleans after cleaning.Again the inside of silicon chip is carried out the chemical mechanical pulping grinding simultaneously and removed the grinding damage layer with the semipolish method or to the two sides.This two sides cmp simultaneously is to realize with the up and down a pair of price fixing that emery cloth is arranged respectively, and need not aforesaid two sides the last grinding tool and the following grinding tool of grinding attachment simultaneously.Do not use attrition process and corrosion process in the past, but grind simultaneously, can process silicon chip accurately with the inside semipolish or two sides.
And then, be not limited to above-mentioned manufacture method without corrosion process, clean (step S13) later operation is used and in the past identical operation.
Figure 10 represents the speed of falling (going up the slippage/process time of grinding tool) and this relation of loading constantly of grinding tool 13.At this moment, the rotating speed of following grinding tool 12, last grinding tool 13 is respectively for example 77 rev/mins, 51 commentaries on classics/parts.When loading little (for example 120+30kgf=zero), the time that the ormal weight grinding is carried out in cost, the situation of (165+30kgf=Δ), big (210+30kgf=) in the load, the grinding time is suitable.Yet,, on condition lower silicon slices such as this rotating speed, can crack if when strengthening loading again than big situation.
Figure 11 is to use identical device, makes load certain (165+30kgf) and the result that the rotating speed of grinding tool 13 and following grinding tool 12 carries out the two sides grinding is gone up in change.Following grinding tool 12 and go up the rotating speed of grinding tool 13, zero for grinding tool 12 down is 45 rev/mins, last grinding tool 13 is 28 rev/mins a situation, and ● then be 60 rev/mins, 38 rev/mins, Δ is 77 rev/mins, 51 rev/mins, ▲ be 87 rev/mins, situations such as 57 rev/mins.From the viewpoint of grinding required time and crackle, ● show good result with Δ.
As previously discussed, use the two sides grinding of this embodiment and the silicon chip after the attrition process to compare, can obtain the silicon chip of high flatness.As shown in figure 12, for example can make TTV is 0.66 μ m (measured value of static capacity type surface planarity analyzer=usefulness ADE).Its result compares with grinding wafers and to have reduced the corrosion processing surplus, for example can reach 2 μ m.And, the erosional surface of this occasion concavo-convex, with carry out the attrition process occasion mutually specific energy diminish, for example can be 0.1 μ m.And then the grinding of subsequent handling can make SFQD reach the degree of 0.1 μ m as long as the minimum amount of grinding about 2 μ m is just passable at an easy rate.
The occasion of the present invention and single face grinding relatively the time, as seen not remainingly on its silicon chip surface be replicated in concavo-convex on the cut surface.So, just can under the silicon chip after the grinding does not carry out the situation of attrition process, not corrode.And, since amount of damage only be attrition process amount of damage 1/10, the corrosion processing surplus is diminished, the flatness change that can prevent from significantly to produce because of corrosion is bad.And, in the present embodiment, the effect that can remove smear metal on the grinding face by grinding fluid can also be arranged.
The present invention can receive following effect because structure described above is arranged.
Manufacture method of the present invention is compared with carrying out the attrition process occasion, particularly makes the above height collection in 1G position Desired high flatness silicon chip when becoming device reduces the corrosion processing surplus, can also reduce the concavo-convex of erosional surface. In the grinding step, as long as very little amount of grinding is just passable. The clean worker that also need to after grinding, not take a lot of trouble Do. Compare with only carrying out the single face grinding, do not need to clean and attrition process.
In addition, can also prevent that silicon temperature from rising and the maintenance temperature is consistent, can in whole field, keep silicon chip thick Spend unanimously with residual impairment, whole plane is formed flatly and reduces warpage.
And then, because the damage of the silicon chip after the grinding of two sides layer is little, also can with the cmp that process velocity is slow Remove damage layer, grind simultaneously on the two sides in the semipolish by the inside or the his-and-hers watches, can remove the grinding damage layer also Make economically the silicon chip that grind on the two sides.
Manufacturing installation of the present invention can easily be realized above-mentioned manufacture method, and by means of relative motion Device is by making the rotation of upper grinding tool and lower grinding tool and making the pallet of clamping silicon chip do planetary motion, except can be to silicon chip The two sides carry out can also making the grinding attachment miniaturization outside the consistent grinding.
In addition, by means of temperature control equipment, can be from interior all sides of upper and lower grinding tool, and from upper and lower grinding tool Grinding face respectively to the end face side of silicon chip and central portion for grinding fluid, and grinding fluid is at upper grinding tool and lower grinding tool The effect of centrifugal force under be fed on the whole field of silicon chip top and bottom, therefrom can be to surface in the silicon chip whole The advantage that residual impairment consistent warpage in two sides is diminished is controlled, had to temperature reliably.
And then, since with distance piece up and down clamp pallet in the end of central gear side, so can prevent because of mill The pallet warpage of cutting hydraulic coupling and causing.
Claims (10)
1. the manufacture method of a silicon chip comprises:
The silicon single crystal rod cutting is made the slicing process of silicon chip;
Two sides in the table of this silicon chip is carried out simultaneously the two sides while grinding process of grinding.
2. the silicon chip manufacture method described in claim 1, it is characterized in that, in above-mentioned two sides while grinding process, wafer chuck is held between the last grinding tool and following grinding tool of double-side grinding apparatus, when grinding was carried out simultaneously in the table the inside of silicon chip, gamut was supplied with grinding fluid to the table the inside of this silicon chip.
3. the silicon chip manufacture method described in claim 1 or 2 is characterized in that, in above-mentioned two sides while grinding process, the temperature of silicon chip table the inside is controlled.
4. as the silicon chip manufacture method described in the claim 1 to 3 each, it is characterized in that, on above-mentioned two sides simultaneously behind the grinding process, silicon chip is corroded and removes grinding damage, and then again the two sides of silicon chip is ground.
5. silicon chip manufacturing installation, it be provided with wafer chuck is held in tabular on the double-side grinding apparatus of the silicon chip of grinding simultaneously table the inside under the state between grinding tool and the following grinding tool, and the temperature control equipment that is controlled at silicon chip table temperature inside when carrying out the two sides grinding.
6. the silicon chip manufacturing installation described in claim 5 is characterized in that, the said temperature control device is to control its temperature by the gamut of the inside of the silicon chip table in the grinding is supplied with grinding fluid in double-side grinding apparatus.
7. the silicon chip manufacturing installation described in claim 6, it is characterized in that, the said temperature control device is to comprise the above-mentioned sap cavity of going up each inner peripheral surface formation of grinding tool and above-mentioned grinding tool down, what form respectively on grinding tool and the above-mentioned grinding tool down on above-mentioned flows out the grinding fluid passage of usefulness for grinding fluid from grinding face separately, and to the grinding fluid feedway formation of above-mentioned sap cavity and above-mentioned grinding fluid passage supply grinding fluid.
8. as each described silicon chip manufacturing installation in the claim 5 to 7, it is characterized in that, the formation of above-mentioned double-side grinding apparatus comprises: go up grinding tool and following grinding tool, they are horizontal arrangement in parallel to each other, with facing surfaces as grinding face, and the table of the above-mentioned silicon chip on above-mentioned grinding face the inside carried out grinding respectively
The relative motion device is used to make and above-mentionedly goes up grinding tool and above-mentioned silicon chip is done relative motion in horizontal plane, and above-mentioned grinding tool down and above-mentioned silicon chip do relative motion in horizontal plane, and
Make the above-mentioned device for exerting that grinding tool is pushed the silicon chip that is placed on the above-mentioned grinding tool down of going up.
9. as each described silicon chip manufacturing installation in the claim 5 to 8, it is characterized in that,
Above-mentioned silicon chip is maintained on the pallet that is provided with outer peripheral teeth, and on the central part separately of grinding tool and above-mentioned grinding tool down peristome is set on above-mentioned,
The formation of above-mentioned relative motion device comprises,
Central gear, it is located in the above-mentioned peristome and becomes engagement with the outer peripheral teeth of above-mentioned pallet,
All gears in the ring-type, it be arranged on above-mentioned outside of going up grinding tool and above-mentioned grinding tool down and with above-mentioned pallet on the outer peripheral teeth engagement, and make above-mentioned pallet under the rotating situation of above-mentioned central gear, realize revolution and rotation, and
The driving mechanism that above-mentioned central gear and above-mentioned ring-type internal gear are rotated.
10. as each described silicon chip manufacturing installation in the claim 5 to 9, it is characterized in that, a pair of interval body up and down in the top and bottom of the end of above-mentioned central gear side clamp above-mentioned pallet also is set.
Applications Claiming Priority (6)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19117195 | 1995-07-03 | ||
| JP191171/95 | 1995-07-03 | ||
| JP441596 | 1996-01-12 | ||
| JP004415/96 | 1996-01-12 | ||
| JP089784/96 | 1996-04-11 | ||
| JP08978496A JP3923107B2 (en) | 1995-07-03 | 1996-04-11 | Silicon wafer manufacturing method and apparatus |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1145531A true CN1145531A (en) | 1997-03-19 |
| CN1096108C CN1096108C (en) | 2002-12-11 |
Family
ID=27276263
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN96110121A Expired - Lifetime CN1096108C (en) | 1995-07-03 | 1996-07-03 | Method and appts. for making silicon chip |
Country Status (5)
| Country | Link |
|---|---|
| JP (1) | JP3923107B2 (en) |
| KR (1) | KR100457718B1 (en) |
| CN (1) | CN1096108C (en) |
| DE (1) | DE19626396B4 (en) |
| TW (1) | TW303488B (en) |
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|---|---|---|---|---|
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Family Cites Families (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5840265A (en) * | 1981-08-28 | 1983-03-09 | Toshiba Corp | Both faces polishing device |
| JPS5972139A (en) * | 1982-10-18 | 1984-04-24 | Toshiba Corp | Processing method for sheet material |
| JPS59107854A (en) * | 1982-12-08 | 1984-06-22 | Hitachi Ltd | Both surfaces simultaneous grinding method of wafer |
| JPS59169758A (en) * | 1983-03-15 | 1984-09-25 | Toshiba Corp | Grinding device for wafer |
| JPS6384860A (en) * | 1986-09-26 | 1988-04-15 | Hitachi Ltd | Surface polishing device |
| KR900001724B1 (en) * | 1987-09-28 | 1990-03-19 | 주식회사 한국삼기 | Plane grinding apparatus |
| JPH06103678B2 (en) * | 1987-11-28 | 1994-12-14 | 株式会社東芝 | Semiconductor substrate processing method |
| JP2555000B2 (en) * | 1989-01-18 | 1996-11-20 | 鐘紡株式会社 | Polishing method for hard and brittle materials |
| AU637087B2 (en) * | 1989-03-24 | 1993-05-20 | Sumitomo Electric Industries, Ltd. | Apparatus for grinding semiconductor wafer |
| JP2674665B2 (en) * | 1989-03-24 | 1997-11-12 | 住友電気工業株式会社 | Semiconductor wafer grinding machine |
| JPH0740565B2 (en) * | 1991-04-05 | 1995-05-01 | 不二越機械工業株式会社 | Wafer double-sided simultaneous grinding method and apparatus |
| JPH0667070A (en) * | 1992-08-24 | 1994-03-11 | Furukawa Electric Co Ltd:The | Semiconductor laser module |
| JP2839801B2 (en) * | 1992-09-18 | 1998-12-16 | 三菱マテリアル株式会社 | Wafer manufacturing method |
| JP2722975B2 (en) * | 1992-11-19 | 1998-03-09 | 住友金属工業株式会社 | Cutting method with multi-wire saw |
| US5389579A (en) * | 1993-04-05 | 1995-02-14 | Motorola, Inc. | Method for single sided polishing of a semiconductor wafer |
| JP3047670B2 (en) * | 1993-04-08 | 2000-05-29 | トヨタ自動車株式会社 | Control device for engine drive generator for electric vehicle |
-
1996
- 1996-04-11 JP JP08978496A patent/JP3923107B2/en not_active Expired - Fee Related
- 1996-05-15 TW TW085105754A patent/TW303488B/zh not_active IP Right Cessation
- 1996-05-31 KR KR1019960019031A patent/KR100457718B1/en active IP Right Grant
- 1996-07-01 DE DE19626396A patent/DE19626396B4/en not_active Expired - Lifetime
- 1996-07-03 CN CN96110121A patent/CN1096108C/en not_active Expired - Lifetime
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Also Published As
| Publication number | Publication date |
|---|---|
| CN1096108C (en) | 2002-12-11 |
| KR970008384A (en) | 1997-02-24 |
| TW303488B (en) | 1997-04-21 |
| KR100457718B1 (en) | 2005-04-06 |
| JPH09248740A (en) | 1997-09-22 |
| JP3923107B2 (en) | 2007-05-30 |
| DE19626396A1 (en) | 1997-01-16 |
| DE19626396B4 (en) | 2006-12-07 |
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