JPS59169758A - Grinding device for wafer - Google Patents

Grinding device for wafer

Info

Publication number
JPS59169758A
JPS59169758A JP58042607A JP4260783A JPS59169758A JP S59169758 A JPS59169758 A JP S59169758A JP 58042607 A JP58042607 A JP 58042607A JP 4260783 A JP4260783 A JP 4260783A JP S59169758 A JPS59169758 A JP S59169758A
Authority
JP
Japan
Prior art keywords
wafer
wafers
gear
grinding
rotary
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP58042607A
Other languages
Japanese (ja)
Inventor
Hachiro Hiratsuka
平塚 八郎
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP58042607A priority Critical patent/JPS59169758A/en
Publication of JPS59169758A publication Critical patent/JPS59169758A/en
Pending legal-status Critical Current

Links

Classifications

    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00Lapping machines or devices; Accessories
    • B24B37/04Lapping machines or devices; Accessories designed for working plane surfaces

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)

Abstract

PURPOSE:To improve workability, by a method wherein wafer guides are located through the medium of wafer securing pads to the face and the back of each of a plurality of planetary gears, and rotary discs, having the top and the under surface whereto grinding cloths are bonded, are positioned concentrically with a solar gear. CONSTITUTION:A rotary upper disc 18 is moved above a rotary lower disc 20, planetrary gears 131 and 132 are lifted, wafer absorbing securing pads 142... on the back surface thereof are wet, and a wafer 27 is ground and secured as it is placed in an opening part 15 in a wafer guide 16. Thereafter, the wafer 27 is similarly secured to wafer absorbing securing pads 141... on the surface side. Then, the rotary upper disc 18 is lowered to a position allowing the gears 131 and 132 to turn, an outer periphery gear 12, the rotary lower disc 20, a solar gear 11 are turned counterclockwise, the rotary upper disc 18 is turned clockwise, and grinding is effected by the use of a grinding agent fed through a grinding agent feed port 19 and grinding cloths 171 and 172. After grinding, water is impregnated between the wafers 27 and the pads 141 and 142 to take out the wafers 27. This enables to enhance workability and to improve processing precision.

Description

【発明の詳細な説明】 〔発明の技術分野〕 本発明は、ウェハの研磨装置の改良に関する。[Detailed description of the invention] [Technical field of invention] The present invention relates to an improvement in a wafer polishing apparatus.

〔発明の技術的背景〕[Technical background of the invention]

周知の如く、トランジスタ、IC1及びLSI等の半導
体素子は、一般にシリコンからなる鏡面ウェハから形成
されている。
As is well known, semiconductor elements such as transistors, IC1s, and LSIs are generally formed from mirror-surfaced wafers made of silicon.

従来、こうしたウェハを得る研磨装置としては、第1図
に示すものが知られている。図中の1は、上面に研磨布
2が貼布された回転盤である。この回転盤1には、回転
軸3が軸着されておシ、図示しないモータを駆動させる
ことにより該回転軸3を反時計回りに回転し、回転盤1
を同方向に回転する。前記回転盤1の上方には、エアー
シリンダー4・・・により上下動可能な例えば2つのプ
レッシャプレート5・・・が所定距離おいて設けられて
いる。なお、前記エアーシリンダー4・・・の先端部と
プレッシャプレート5・・・間にはボールベアリングが
設けられている。これらプレッシャプレート5・・・は
下面に円形状の凹部6・・・を有し、この凹部6・・・
にウェハ貼布グレート7が固定されて因る。前記プレッ
シャプレート5・・・は、ウェハ貼布プレート7・・・
が回転し得る程度に圧力を与える動きをする。また、前
記回転盤1の上方には、5102やAt205を主成分
とする研磨剤を吐出するノズル8・・・が設けられてい
る。
Conventionally, as a polishing apparatus for obtaining such wafers, the one shown in FIG. 1 is known. Reference numeral 1 in the figure is a rotary disk with a polishing cloth 2 pasted on its upper surface. A rotary shaft 3 is attached to the rotary disk 1, and the rotary shaft 3 is rotated counterclockwise by driving a motor (not shown).
rotate in the same direction. For example, two pressure plates 5, which can be moved up and down by air cylinders 4, are provided above the rotary disk 1 at a predetermined distance. Note that a ball bearing is provided between the tip of the air cylinder 4 and the pressure plate 5. These pressure plates 5 have circular recesses 6 on their lower surfaces, and these recesses 6...
This is due to the fact that the wafer pasting grate 7 is fixed to the wafer pasting plate 7. The pressure plate 5... is the wafer pasting plate 7...
Move to apply pressure to the extent that it can rotate. Further, above the rotary disk 1, nozzles 8 are provided for discharging an abrasive mainly composed of 5102 or At205.

こうした構造の研磨装置においては、まず各プレッシャ
プレート5・・・を上昇させた状態でウェハ貼布プレー
ト7・・・の下面に夫々熱可塑性の接着剤層9・・・を
介してウェハ10・・・を固定する。
In a polishing apparatus having such a structure, first, each pressure plate 5 is raised and the wafer 10 is attached to the bottom surface of the wafer pasting plate 7 via a thermoplastic adhesive layer 9, respectively. Fix...

つづいて、シリンダによ)前記プレッシャプレート5・
・・をウェハ10・・の下面が回転盤1上の研磨布2に
達するまで下降する。次いで、ノズル8・・・から研磨
剤を吐出しつつ、回転盤1を反時計回りに回転する。こ
れによシ、ウェハ貼布プレート7・・・はプレッシャプ
レート5・・・によシ圧力を加えられながらウェハ貼付
プレート7が位置する範囲内で反時計回多に回転し、ウ
ェハ10の表面が研磨される。
Next, the pressure plate 5 (by the cylinder)
... is lowered until the lower surface of the wafer 10 ... reaches the polishing cloth 2 on the rotary disk 1. Next, the rotary disk 1 is rotated counterclockwise while discharging the abrasive from the nozzles 8 . As a result, the wafer pasting plate 7 is rotated counterclockwise within the range where the wafer pasting plate 7 is located while being applied with pressure by the pressure plate 5, and the surface of the wafer 10 is rotated. is polished.

〔背景技術の問題点〕[Problems with background technology]

しかしながら、前述したウェハの研磨装置によれば以下
に示す欠点を有していう。
However, the above-described wafer polishing apparatus has the following drawbacks.

(1)  ウェハ10・・・を接着剤層9・・・を介し
て1枚毎にウェハ貼付グレート7・・・に固定しガけれ
ばならないとともに、ウェハ1o・・・の研磨後は1枚
毎にウェハ1o・・を前記ウェハ貼付プレート7・・・
から剥離しなければならな−ため、作業性の低下を招く
(1) The wafers 10... must be fixed to the wafer attachment grating 7... one by one via the adhesive layer 9..., and only one wafer 1o... needs to be fixed after polishing. Each wafer 1o... is attached to the wafer attachment plate 7...
Since the material must be peeled off from the surface, work efficiency is reduced.

(2)  ウェハ10・・・を接着剤層9・・・を介し
てウェハ貼付グレート7・・・に固定するため、ウェハ
10・・・の裏面に接着剤が残存付着する。したがって
、それを取り除くためにトリクロールエチレン、パーク
ロールエチレン、フレオン等の有機溶剤による洗浄工程
が心安である。
(2) Since the wafers 10 are fixed to the wafer attaching grates 7 through the adhesive layers 9, adhesive remains on the back surfaces of the wafers 10. Therefore, in order to remove it, a cleaning process using an organic solvent such as trichlorethylene, perchloroethylene, or Freon is safe.

(3)  ウェハ10・・・の仕上シ精度ヲ向上させる
目的で接着剤層9・・・の厚さをミクロンオーダーで制
御してウェハ1o・・・を接着剤層厚のバラツキのない
状態でウェハー貼付プレート7に接着しなければならな
いため、ウェハ1o・・・の固定作業に多大な熟練と時
間を要する。
(3) In order to improve the finishing accuracy of wafers 10, the thickness of adhesive layers 9 are controlled on the order of microns, and wafers 1o are prepared without variations in adhesive layer thickness. Since the wafers must be adhered to the wafer attachment plate 7, the work of fixing the wafers 1o requires a great deal of skill and time.

(4) ウェハJO・・・は、研磨時において回転盤1
上方のウェハ貼付プレート7・・・が位置する範囲での
単なる円運動しか行なわないため、回転盤1の上面やウ
ェハ貼付プレート7・・・の下面の平坦度特に接着剤層
の平坦度の影響を受け、仕上り寸法精度が低下する。
(4) The wafer JO... is placed on the rotary disk 1 during polishing.
Since the upper wafer attachment plate 7 only performs a circular motion in the range where it is located, the influence of the flatness of the upper surface of the rotary disk 1 and the lower surface of the wafer attachment plate 7, especially the flatness of the adhesive layer As a result, the finished dimensional accuracy decreases.

〔発明の目的〕[Purpose of the invention]

本発明は上記事情に鑑みてなされたもので、ウェハを接
着剤層を使用せずに固定し、ウェハ固定作業を容易にす
るとともに、接着剤層の剥離作業、有機溶剤による洗浄
工程を省いて作業性を向上した加工精度のよいウェハの
研磨装置を提供するものである。
The present invention has been made in view of the above circumstances, and makes the wafer fixing work easier by fixing the wafer without using an adhesive layer, and also eliminates the work of peeling off the adhesive layer and the cleaning process using an organic solvent. The present invention provides a wafer polishing device with improved workability and high processing accuracy.

〔発明の概要〕[Summary of the invention]

本発明は、太陽歯車に1個以上の遊星歯車を噛合して設
け、この遊星歯車の表裏に複数のウェハをセットすべき
開孔部を有するウェハガイドをウェハ吸着固定パッドを
介して設け、同遊星歯車の上方に下面に研磨布が貼布さ
れるとともに、上下方向に貫通された研磨剤供給口を有
する回転上盤を前記太陽歯車に対して同心円状に設け、
更に同遊星歯車の下方に上面に研磨布が貼布された回転
下盤を前記太陽歯車に対して同心円状に設りることによ
って、ウェハの着脱5− を容易にして作業性を向上させるとともに、加工精度を
向上させるものである。
The present invention provides a sun gear with one or more planetary gears meshing with the sun gear, and a wafer guide having an opening for setting a plurality of wafers on the front and back sides of the planetary gear via a wafer suction and fixing pad. A rotating upper plate having an abrasive cloth affixed to its lower surface above the planetary gear and having an abrasive supply port penetrated in the vertical direction is provided concentrically with respect to the sun gear,
Furthermore, by providing a rotary lower plate with an abrasive cloth affixed to the upper surface below the planetary gear concentrically with respect to the sun gear, it is possible to easily attach and detach the wafer and improve work efficiency. , which improves machining accuracy.

〔発明の実施例〕[Embodiments of the invention]

以下、本発明を第2図及び第3図を参照して説明する。 Hereinafter, the present invention will be explained with reference to FIGS. 2 and 3.

図中の11はステンレスからなる太陽歯車である。この
太陽歯車11の周囲には、ステンレスからなる環状の外
周歯車12が該太陽歯車に対して同心円状に設けられて
いる。前記太陽歯車11、外周歯車12間には、例えば
ステンレスからなる2つの遊星歯車131.132が夫
夫前記歯車11.12に噛合して設けられている。これ
ら遊星歯車131*132・・・の表裏には、夫々厚さ
1111111前後のウェハ吸着固定・f2ド14、・
・・、142・・・が設けられている。これら/IPッ
ド14・11・・・、142・・・は例えば市販されて
いる人工皮革やゴムの中から厚さむらがなく、表面が均
一で微少な孔を有するものから成る。同遊星歯車131
 .132の表裏には、前記ウェハ吸着固定i4ッド1
4% ・・・、142・・・を介して夫6一 夫複数のウェハをセットすべき開孔部15・・・を有す
るウェハガイド16・・・が設けられている。
11 in the figure is a sun gear made of stainless steel. Around the sun gear 11, an annular outer gear 12 made of stainless steel is provided concentrically with respect to the sun gear. Between the sun gear 11 and the outer gear 12, two planetary gears 131 and 132 made of stainless steel, for example, are provided in mesh with the gears 11 and 12. On the front and back sides of these planetary gears 131*132..., wafers with a thickness of around 1111111 are fixed by suction, f2 dors 14,...
..., 142... are provided. These /IP pads 14, 11..., 142... are made of, for example, commercially available artificial leather or rubber with uniform thickness, uniform surface, and minute pores. The same planetary gear 131
.. On the front and back sides of 132, the wafer suction and fixing i4 pad 1 is provided.
Wafer guides 16 are provided with openings 15 into which a plurality of wafers are to be set via wafer guides 16, 142, .

このウェハガイド16・・・は強化プラスチックからな
り、その厚みはウェハ仕上シ厚よシ1o。
The wafer guide 16 is made of reinforced plastic, and its thickness is 10 mm compared to the wafer finishing thickness.

〜500μm薄い。同遊星歯車131.132の上方に
は、下面に研磨布121を貼布したステンレスからなる
回転上盤18が設けられている。
~500μm thin. Above the planetary gears 131 and 132, a rotating upper plate 18 made of stainless steel and having a polishing cloth 121 applied to its lower surface is provided.

この回転上盤18は、前記太陽歯車11と同心円状であ
り、図示しないシリンダによって上下動する。このシリ
ンダの先端部と回転上盤18間にはロールベアリングが
設けられている。前記回転上盤18及び研磨布171 
には、上下方向に貫通する研磨剤供給口19・・・が設
けられている。また、前記遊星歯車12・・・の下方に
は、上面に研磨布172を貼布したステンレスからなる
回転下盤20が設けられている。
This rotating upper plate 18 is concentric with the sun gear 11, and is moved up and down by a cylinder (not shown). A roll bearing is provided between the tip of this cylinder and the rotating upper plate 18. The rotating upper plate 18 and the polishing cloth 171
is provided with an abrasive supply port 19 that penetrates in the vertical direction. Further, below the planetary gears 12..., a rotary lower plate 20 made of stainless steel and having an abrasive cloth 172 applied to its upper surface is provided.

前記回転下盤20には、第1の円筒状回転軸21の上端
が軸着されている。前記太陽歯車1ノには、前記円筒状
回転軸21に貫通した第2の円筒状回転軸22の上端が
軸着されている。
The upper end of a first cylindrical rotating shaft 21 is pivotally attached to the lower rotating plate 20 . The upper end of a second cylindrical rotating shaft 22 that passes through the cylindrical rotating shaft 21 is pivotally attached to the sun gear 1 .

前記回転上盤18には、前記第2の円筒状回転軸22に
貫通した回転軸23の上端が軸着されている。前記第1
の円筒状回転軸21の下端部にばかさ歯車24、第1の
歯車251が設けられ、かつ第2の円筒状回転軸22、
回転軸23の下端部には夫々第2.第3の歯車252 
The upper end of a rotating shaft 23 passing through the second cylindrical rotating shaft 22 is pivotally attached to the rotating upper plate 18 . Said first
A bevel gear 24 and a first gear 251 are provided at the lower end of the cylindrical rotating shaft 21, and the second cylindrical rotating shaft 22,
At the lower end of the rotating shaft 23, there are respectively second. Third gear 252
.

253が夫々設けられている。また、前記第1゜第2の
円筒状回転軸21.22間、及び第2の円筒状回転軸2
22回転軸23間の上下部には、夫々軸受261 % 
26+ 、262.262が介在されている。前記回転
下盤2oの下方には、内壁面に前記外周歯車12及びか
さ歯車24と噛合する歯車部を有しかつ底部が開口した
椀型部材(図示せず)が設けられている。更に、前記第
1.第2の円筒状回転軸21.22及び回転軸23の近
くには、これら回転軸21〜23の夫々の歯車251〜
253と別々に噛合する歯車(図示せず)を有した回転
軸(図示せず)が該回転軸21〜23と平行に設けられ
ている。
253 are provided respectively. Also, between the first and second cylindrical rotation shafts 21 and 22, and between the second cylindrical rotation shaft 2
Bearings 261% are installed at the upper and lower portions between the rotating shafts 23 and 23, respectively.
26+, 262.262 are interposed. A bowl-shaped member (not shown) having an open bottom and having a gear portion meshing with the outer peripheral gear 12 and the bevel gear 24 on its inner wall surface is provided below the rotating lower plate 2o. Furthermore, the above-mentioned No. 1. Near the second cylindrical rotation shaft 21.22 and the rotation shaft 23, the gears 251 to 25 of each of these rotation shafts 21 to 23 are
A rotating shaft (not shown) having a gear (not shown) that meshes separately with the rotating shaft 253 is provided parallel to the rotating shafts 21-23.

この回転軸の一端にはウオーム歯車(図示せず)が設け
られ、更にこのウオーム歯車には図示しないモータに取
付けられたウオームが噛合されている。
A worm gear (not shown) is provided at one end of the rotating shaft, and a worm attached to a motor (not shown) is meshed with the worm gear.

次に、前述した構造の研磨装置の作用について説明する
Next, the operation of the polishing apparatus having the above-described structure will be explained.

まず、シリンダの力を解除して回転上盤18を回転下盤
20の上方に移動した状態で、遊星歯車IJ、132を
持ち上げ、遊星歯車131゜132の裏面側のウェハ吸
着固定・ぐラド142・・・を水で濡らした後、ウェハ
27・・・をウェハガイド16・・・の開孔部15・・
・に収納しつつウェハ27・・・面を濡らした前記・ぐ
ラド142に摺り合わせ、固定する。つづいて、遊星歯
車131 。
First, with the force of the cylinder released and the upper rotary plate 18 moved above the lower rotary plate 20, the planetary gears IJ, 132 are lifted up and the wafer is suctioned and fixed on the back side of the planetary gears 131 and 132. After wetting the wafers 27 with water, the wafers 27 are placed in the openings 15 of the wafer guides 16.
While storing the wafer 27 in the . . . surface, the wafer 27 is rubbed against the wetted . grading pad 142 and fixed. Next, the planetary gear 131.

132を元の位置に戻した後、上記と同様にしてウェハ
27・・・を遊星歯車131.13zの表面側のウェハ
ガイド16・・・の開孔部15のウェハ吸着固定パッド
141・・・に固定する。つづいて、シリンダを用いて
回転上盤18を遊星歯車131.13□が十分回転し得
る位置まで下降させる。次に、研磨剤供給口19.19
から研9− 磨削を供給しつつ、モータの駆動によりウオーム歯車、
並びに第1〜第3の歯車251〜253及びかさ歯車2
4を介して外周歯車12、回転下盤20.太陽歯車1ノ
を反時計回りにかつ回転上盤18を時計回漫に回転させ
、遊星歯車131.13.を時計回シに回転させて各ウ
ェハ27・・・の表面を研磨した。なお、前記研磨剤と
しては粒径0.5μm以下の5102を主成分とし、水
酸化ナトリウム、水酸化カリウム、アンモニア水等でP
H、を11〜14の間に調整したものを用いた。ウェハ
27・・・の研磨後は、研磨剤の滴下、モータの駆動を
止めた後、シリンダの力を解除して回転上盤18を回転
下盤2oの上方に移動した状態で、ウェハ27・・・面
とウェハ吸着固定パッド14I・・・、142・・・面
間に水を浸透させることにより、ウェハ27・・・をウ
ェハ吸着固定ノやラド141・・・、142・・・から
取り除す。
After returning the wafers 132 to their original positions, the wafers 27... are placed on the wafer suction/fixing pads 141... in the openings 15 of the wafer guides 16... on the surface side of the planetary gears 131.13z. Fixed to. Next, the rotating upper plate 18 is lowered using a cylinder to a position where the planetary gears 131.13□ can rotate sufficiently. Next, the abrasive supply port 19.19
Grinding 9- While supplying grinding, the worm gear is
and the first to third gears 251 to 253 and the bevel gear 2
4 to the outer peripheral gear 12 and the rotating lower plate 20. The sun gear 1 is rotated counterclockwise and the rotating upper plate 18 is rotated clockwise, and the planetary gears 131, 13. was rotated clockwise to polish the surface of each wafer 27. The abrasive is mainly composed of 5102 with a particle size of 0.5 μm or less, and is polished with sodium hydroxide, potassium hydroxide, aqueous ammonia, etc.
H, adjusted to between 11 and 14 was used. After polishing the wafers 27..., stop dropping the abrasive and stop driving the motor, release the cylinder force, and move the rotating upper plate 18 above the rotating lower plate 2o. The wafers 27... are removed from the wafer suction/fixing pads 141..., 142... by infiltrating water between the surfaces and the wafer suction/fixing pads 14I..., 142... remove

しかして、本発明によれば以下に示す効果を有する。According to the present invention, the following effects can be obtained.

(1)  ウェハ27・・・の固定に際して、従来の如
10− 〈接着剤層を用いることがなく、ウェハ吸着固定ハツト
14.・・・、142・・・を水で濡らすだけでウェハ
27・・・を容易に固定できる。また、研磨後はウェハ
27・・・面とウェハ吸着固定ノJ?ッド141・・・
、142・・・面間に水を浸透させることによりウェハ
27・・・を容易に剥離できるとともに、従来の如き接
着剤層の使用に起因する有機溶剤による洗浄工程を省く
ことができる。したがって、従来と比べ作業性を著しく
向上できる。
(1) When fixing the wafers 27..., the wafer suction and fixation hat 14. . . , 142 . . . with water, the wafers 27 . . . can be easily fixed. Also, after polishing, the wafer 27... surface and the wafer are fixed by suction. Pad 141...
, 142 . . . by allowing water to penetrate between the surfaces, the wafers 27 . Therefore, work efficiency can be significantly improved compared to the conventional method.

(2)従来の如く接着剤層を用いないとともに、ウェハ
を単に円運動させながら研磨を行なう構造ではなく、太
陽歯車1ノの外周側面に遊星歯車131 ・・・、13
2・・・を遊星運動するように設け、かつ太陽歯車1ノ
の表裏にウェハ吸着固定パッド14.・・・、142・
・・を介して複数のウェハ27・・・をセットすべき開
孔部15・・・を有するウェハガイド16・・・を設け
た構造となっているだめ、ウェハ27・・・を広い領域
で一様に研磨でき、ウェハ27・・・の仕上シ寸法精度
を向上することができる。
(2) Instead of using a conventional adhesive layer and polishing the wafer while simply moving it in a circular motion, the planetary gears 131..., 13 are attached to the outer peripheral side of the sun gear 1.
2... are provided in a planetary motion, and wafer suction and fixing pads 14.2 are provided on the front and back sides of the sun gear 1. ..., 142・
The structure includes a wafer guide 16 having an opening 15 through which a plurality of wafers 27 are to be set. The wafers 27 can be polished uniformly, and the dimensional accuracy of the finished wafers 27 can be improved.

(3)  ウェハ22・・・を遊星歯車131 ・・・
、132・・・の表裏のウェハガイド16・・・にセッ
トすることができるため、従来の片面研磨方式の場合に
比べて単位時間abの加工処理ウェハ枚数は約2倍であ
る。また、上述した機構によシウェハ22・・・の研磨
を行なうとともに、研磨剤として粒径0.5μm以下の
5102が主成分でかつPI(11〜14のものを用い
るため、人工皮革等からなるウェハ吸着固定)ぐラド1
4.・・・、142・・・との作用によシ機械的な作用
と化学的な作用をもった研磨ができ、遊星歯車131.
13gの上側及び下側でのウェハ27・・・の研磨量を
ほぼ均一にできる。
(3) The wafer 22... is connected to the planetary gear 131...
, 132 . . . , the number of wafers processed per unit time ab is approximately twice that of the conventional single-sided polishing method. In addition, the above-mentioned mechanism polishes the wafer 22..., and since the main component is 5102 with a particle size of 0.5 μm or less and PI (11 to 14) is used as the polishing agent, it is made of artificial leather or the like. Wafer suction fixation) GRADO 1
4. ..., 142... enables mechanical and chemical polishing, and the planetary gear 131.
The amount of polishing of the wafer 27 on the upper and lower sides of 13g can be made almost uniform.

事実、本発明の研磨装置を用いて回転上盤側及び回転下
盤側においたAロットのウェハについて回転上・下盤1
8.20の回転速度60rpm。
In fact, using the polishing apparatus of the present invention, the wafers of lot A were placed on the upper rotating plate side and the lower rotating plate side.
8.20 rotation speed 60 rpm.

研磨時間40分の条件下で研磨した時の研磨量を調べた
ところ、第4図(a) 、 (b)に示すグラフ図が得
られた。なお、同図(a) 、 (b)は夫々回転上盤
側ウェハ、回転下盤側ウェハの場合を示す。同図(a)
 、 (b)により、回転上盤側ウェハの研磨量の平均
値が67.2μmであるのに対し、回転下盤側ウェハの
それは67.6μmであった。また、同装置を用いてB
ロットのウェハについて回転上・下盤18.20の回転
速度60rpm、研磨時間25分の条件下で研磨した時
の研磨量を調べたところ、第5図(a) 、 (b)に
示すグラフ図が得られた。なお、同図(、) 、 (b
)は夫々回転上盤側ウェハ、回転下盤側ウェハの場合を
示す。同図(a) 、 (b)によシ、回転上盤側ウェ
ハの研磨量の平均値が39.6μmであるのに対し、回
転下盤側のウェハのそれは40.2μmであった。これ
らの結果よシ、試験条件を変えたA、B各ロットとも回
転上盤側ウェハ、回転下盤側ウニへ間で研磨量の差がほ
とんどないことが確認できる。
When the amount of polishing was examined under conditions where the polishing time was 40 minutes, the graphs shown in FIGS. 4(a) and 4(b) were obtained. Note that FIGS. 3A and 3B show the case of a wafer on the upper rotating plate side and a wafer on the lower rotating plate side, respectively. Figure (a)
, (b), the average value of the polishing amount of the wafers on the upper rotating plate side was 67.2 μm, while that of the wafers on the lower rotating plate side was 67.6 μm. Also, using the same device, B
When we investigated the polishing amount when the wafers of the lot were polished under the conditions of the rotating upper and lower plates 18.20 at a rotation speed of 60 rpm and a polishing time of 25 minutes, the graphs shown in Figures 5 (a) and (b) were obtained. was gotten. In addition, the same figure (,), (b
) indicate the cases of wafers on the upper rotating plate side and wafers on the lower rotating plate side, respectively. As shown in Figures (a) and (b), the average polishing amount of the wafers on the upper rotating plate side was 39.6 μm, while that of the wafers on the lower rotating plate side was 40.2 μm. From these results, it can be confirmed that there is almost no difference in the amount of polishing between the wafers on the upper rotating disk and the sea urchins on the lower rotating disk for each lot A and B under different test conditions.

また、従来及び本発明装置を用Aて100調φウエハの
研磨後平行度(50枚加工の平均値)を調べたところ、
従来装置によるウェハの平行度は8.5μmであるのに
対し、本発明装置によるウェハのそれは4.3μmであ
った。これにより、13一 本発明装置が従来装置と比べ、ウェハの研磨後平行度(
平坦度)を約2倍程度向上できることが確認できる。
In addition, when we investigated the parallelism after polishing (average value of 50 wafers processed) of 100-tone φ wafers using conventional and present invention equipment, we found that
The parallelism of the wafer produced by the conventional apparatus was 8.5 μm, while that of the wafer produced by the apparatus of the present invention was 4.3 μm. As a result, the apparatus of the present invention has a higher parallelism after polishing the wafer (
It can be confirmed that the flatness) can be improved approximately twice.

なお、上記実施例では、太陽歯車、外周歯車の駆動によ
シ遊星歯車を回転させる場合について述べたが、これに
限らず、太陽歯車あるいは外周歯車のいずれか一方の駆
動によシ遊星歯車を回転させてもよい。
In the above embodiment, the case where the planetary gear is rotated by driving the sun gear and the outer gear is described, but the invention is not limited to this, and the planetary gear can be rotated by driving either the sun gear or the outer gear. You can also rotate it.

また、上記実施例では、回転上盤、回転下盤、太陽歯車
、遊星歯車及び外周歯車の材質としてステンレスを用い
たが、これに限らず、例えばアルミニウム、黄銅あるい
は強化プラスチック等を用いてもよい。
Furthermore, in the above embodiment, stainless steel was used as the material for the upper rotating plate, lower rotating plate, sun gear, planetary gear, and outer peripheral gear, but the material is not limited to this, and for example, aluminum, brass, reinforced plastic, etc. may be used. .

〔発明の効果〕〔Effect of the invention〕

以上詳述した如く本発明によれば、ウェハの着脱を容易
にして作業性を向上はせるとともに、加工精度を向上し
得るウェハの研磨装置を提供できるものである。
As described in detail above, according to the present invention, it is possible to provide a wafer polishing apparatus that can easily attach and detach a wafer to improve workability and improve processing accuracy.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は従来のウェハの研磨装置の断面図、14− 除いた平面図、第4図(a) 、 (b)及び第5図(
=) 、 (b)は夫々第2図図示の研磨装置によるA
、B各ロットの回転上盤側ウェハ、回転下盤側ウェハの
研磨量と枚数との関係を示すグラフ図である。 11・・・太陽歯車、12・・・外周歯車、131 。 132・・・遊星歯車、’4++142・・・ウェハ吸
着固定パッド、15・・・開孔部、16・・・ウェハガ
イド、171*172・・・研磨布、18・・・回転上
盤、19・・・研磨剤供給口、20・・・回転下盤、2
1.22・・・円筒状回転軸、23・・・回転軸、24
・・・かさ歯車、251〜253・・・歯車、261゜
262・・・軸受、27・・・ウェハ。 出願人代理人  弁理士 鈴 江 武 彦15− 第1図 ♂<ζギギ ダ7(怪蕃
Fig. 1 is a sectional view of a conventional wafer polishing apparatus, a plan view with 14- removed, Fig. 4(a), (b), and Fig. 5(
=) and (b) are A by the polishing apparatus shown in Fig. 2, respectively.
, B is a graph diagram showing the relationship between the amount of polishing and the number of wafers on the upper rotary plate side and the lower rotary plate side wafers of each lot. 11... Sun gear, 12... Peripheral gear, 131. 132... Planetary gear, '4++142... Wafer suction fixing pad, 15... Opening part, 16... Wafer guide, 171*172... Polishing cloth, 18... Rotating upper plate, 19 ... Abrasive supply port, 20 ... Rotating lower plate, 2
1.22... Cylindrical rotating shaft, 23... Rotating shaft, 24
...Bevel gear, 251-253...Gear, 261°262...Bearing, 27...Wafer. Applicant's agent Patent attorney Takehiko Suzue 15- Figure 1 ♂<ζgigida 7 (Monster

Claims (1)

【特許請求の範囲】[Claims] 太陽歯車と、この太陽歯車に噛合して設けられた1個以
上の遊星歯車と、この遊星歯車の表裏にウェハ吸着固定
・ぐラドを介して設けられ、沙数のウェハをセットすべ
き開孔部を有するウェハガイドと、同遊星歯車の上方に
前記太陽歯車に対して同心円状に設けられ、下面に研磨
布が貼布されるとともに、上下方向に貫通された研磨剤
供給口を有する回転上盤と、同遊星歯車の下方に前記太
陽歯車に対して同心円状に設けられ、上面に研磨布が貼
布された回転下盤とを具備することを特徴とするウェハ
の研磨装置。
A sun gear, one or more planetary gears meshed with the sun gear, and holes provided on the front and back sides of the planetary gear via wafer adsorption/grids, into which the number of wafers should be set. a rotating top having a wafer guide provided above the planetary gear concentrically with respect to the sun gear, an abrasive cloth affixed to the lower surface, and an abrasive supply port penetrating in the vertical direction; 1. A wafer polishing apparatus comprising: a rotating lower disc which is provided below the planetary gear concentrically with respect to the sun gear, and has a polishing cloth pasted on its upper surface.
JP58042607A 1983-03-15 1983-03-15 Grinding device for wafer Pending JPS59169758A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58042607A JPS59169758A (en) 1983-03-15 1983-03-15 Grinding device for wafer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58042607A JPS59169758A (en) 1983-03-15 1983-03-15 Grinding device for wafer

Publications (1)

Publication Number Publication Date
JPS59169758A true JPS59169758A (en) 1984-09-25

Family

ID=12640717

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58042607A Pending JPS59169758A (en) 1983-03-15 1983-03-15 Grinding device for wafer

Country Status (1)

Country Link
JP (1) JPS59169758A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0672470A1 (en) * 1994-03-18 1995-09-20 Sms Schloemann-Siemag Aktiengesellschaft Device for machining rolls during rolling
DE19626396B4 (en) * 1995-07-03 2006-12-07 Mitsubishi Materials Silicon Corp. Method and device for producing and grinding silicon wafers

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0672470A1 (en) * 1994-03-18 1995-09-20 Sms Schloemann-Siemag Aktiengesellschaft Device for machining rolls during rolling
DE19626396B4 (en) * 1995-07-03 2006-12-07 Mitsubishi Materials Silicon Corp. Method and device for producing and grinding silicon wafers

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