JPS60228068A - Polishing machine - Google Patents

Polishing machine

Info

Publication number
JPS60228068A
JPS60228068A JP59080213A JP8021384A JPS60228068A JP S60228068 A JPS60228068 A JP S60228068A JP 59080213 A JP59080213 A JP 59080213A JP 8021384 A JP8021384 A JP 8021384A JP S60228068 A JPS60228068 A JP S60228068A
Authority
JP
Japan
Prior art keywords
wafers
plate
surface plate
plates
polishing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP59080213A
Other languages
Japanese (ja)
Inventor
Takayuki Minamiyama
南山 隆幸
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP59080213A priority Critical patent/JPS60228068A/en
Publication of JPS60228068A publication Critical patent/JPS60228068A/en
Pending legal-status Critical Current

Links

Landscapes

  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)

Abstract

PURPOSE:To improve the accuracy of polishing, by sticking adhesive plates to the top and bottom of a base disk which is formed with a gear and interposed between a pair of surface plates, and by sticking wafer positioning plates to the adhesive plates, so as to polish wafers without using an adhesive agent. CONSTITUTION:An upper and a lower adhesive plates 14 is impregnated with water. Wafers 16 are pushed on the through holes 17 of an upper and a lower positioning plates 15 so that the wafers are kept in tight contact with both the sides of a base plate 13 because of the water impregnated in urethane sheets 14. After the base plate 13 is engaged with a sun gear 10 and an internal gear 7, an upper surface plate 3 is moved down to pinch the base plate between the upper surface plate and a lower surface plate 1. The upper surface plate 3 is rotated in a direction 6 and the lower plate 1 is rotated in a direction 2. At the same time, the sun gear 10 and the internal gear 7 are rotated to cause the base plate 13 to perform a planetary motion, and a polishing agent is supplied in between the upper and the lower surface plates 3, 1, so that the wafers 16 are polished. According to this constitution, the sticking work on the wafers is facilitated, and the flatness of the base plate is transferred to the wafers to improve the accuracy of the polishing.

Description

【発明の詳細な説明】 〔発明の技術分野〕 本発明は、主として半導体ウェーハ(以下、単にウェー
ハと略称する。)のボリシングに用いられる研磨装置に
関する。
DETAILED DESCRIPTION OF THE INVENTION [Technical Field of the Invention] The present invention relates to a polishing apparatus mainly used for polishing semiconductor wafers (hereinafter simply referred to as wafers).

〔発明の技術的背景とその問題点〕[Technical background of the invention and its problems]

従来、例えばシリコン(St)などのウェーハをボリシ
ング加工によシ最終的に仕上げ加工するには。
Conventionally, a wafer of silicon (St), for example, is subjected to a final finishing process by a boring process.

第1図に示すように、ウェーハ(A)・・・を金属、ガ
ラス、セラミックスなどからなり1回転自在かつ昇降自
在な支持体(C) K固着されたリファレンス・プレー
) (B)に接着し、さらに、支持体(C)を回転中の
ラップ盤(D)に押圧することにより行っている。この
ときの接着方法として最も一般的なのは、ワックスによ
る接着である。
As shown in Figure 1, a wafer (A) is bonded to a support (C) made of metal, glass, ceramics, etc. that can rotate freely and can be raised and lowered (B). This is further carried out by pressing the support (C) against the rotating lapping machine (D). The most common bonding method at this time is wax bonding.

しかし、とのワックスを介しての接着は、接着層厚さの
不均一性がそのままウェーハの平面度。
However, with bonding through wax, the non-uniformity of the adhesive layer thickness remains unchanged and the flatness of the wafer.

練を必要とする。他方、近時、集積回路素子の高密度化
にともない、ウェーハの精度もますます厳しくなってい
る。しかし、ワックスの塗布を人手でやる以上、接着層
厚さの均一性と再現性には自ずと限界がある。しかもワ
ックスを用いる接着は。
Requires practice. On the other hand, in recent years, as the density of integrated circuit elements has increased, the accuracy of wafers has become increasingly strict. However, since the wax is applied manually, there are limits to the uniformity and reproducibility of the adhesive layer thickness. Moreover, adhesion using wax.

後処理としてワックス除去作業が不可欠であシ。Wax removal work is essential as post-processing.

自動化を妨げる一因となっていた。This was a factor that hindered automation.

〔発明の目的〕[Purpose of the invention]

本発明は、上記事情を参酌し7てなされたもので。 The present invention has been made in consideration of the above circumstances.

接着剤を用いることなくウェーハをボリシングすること
ができる研磨装置を提供することを目的とする。
It is an object of the present invention to provide a polishing apparatus capable of polishing a wafer without using an adhesive.

〔発明の概要〕[Summary of the invention]

両面ボリシング装置のキャリヤの代シに外周部に歯車が
形成され円板状の基板を一対の定盤間に介装させ、基板
にウェーハを密着して保持する接着板を貼着し、上記接
着板上にウェーハを位置決めする位置決め板を貼着する
ようにしたものである。
A disk-shaped substrate with gears formed on the outer periphery is inserted between a pair of surface plates in place of the carrier of the double-sided boring machine, and an adhesive plate that holds the wafer in close contact with the substrate is pasted. A positioning plate for positioning the wafer is attached onto the plate.

〔発明の実施例〕[Embodiments of the invention]

以下1本発明の一実施例を図面を参照して詳述する。 An embodiment of the present invention will be described below in detail with reference to the drawings.

第2図及び第3図は、この実施例のボリシング用の研磨
装置の要部の構成を示している。下定盤(1)は1円柱
状に形成され図示せぬ第1の駆動機構により矢印(2)
方向に回転駆動されるようになっている。この下定盤(
1)の上方にて同軸に対向して上定盤(3)が配設され
ている。この上定盤(3)は、図示せぬ昇降機構によυ
軸方向である矢印(4)方向に昇降するようになってい
る。この上定盤(3)は、下定盤fl)と同軸に下定盤
(1)下方位置に設けられ下定盤(1)の中央部に穿設
された貫通孔(5)から突出している図示せぬスプライ
ン軸に下降時に歯合するようになっている。そうして、
このスプライン軸は図示せぬ第2の駆動機構により回転
駆動され、スプライン軸と歯合している上定盤(3)を
矢印(6)方向に回転させるようになっている。一方、
下定盤(1)の外周部には1円環状のインターナル歯車
(7)が下定盤(1)を取囲むように中空軸(7a)の
上端部に連結されて配設されている。このインターナル
歯車(7)は。
FIGS. 2 and 3 show the construction of the main parts of the polishing apparatus for boring according to this embodiment. The lower surface plate (1) is formed into a cylindrical shape, and is driven by a first drive mechanism (not shown) as shown by the arrow (2).
It is designed to be rotationally driven in the direction. This lower surface plate (
An upper surface plate (3) is disposed above and coaxially opposed to the upper surface plate (3). This upper surface plate (3) is moved by an elevating mechanism (not shown).
It is designed to move up and down in the direction of arrow (4), which is the axial direction. This upper surface plate (3) is provided coaxially with the lower surface plate fl) at a position below the lower surface plate (1), and protrudes from a through hole (5) bored in the center of the lower surface plate (1). It is designed to mesh with the splined shaft when lowering. Then,
This spline shaft is rotationally driven by a second drive mechanism (not shown), and the upper surface plate (3) meshing with the spline shaft is rotated in the direction of the arrow (6). on the other hand,
A ring-shaped internal gear (7) is disposed on the outer periphery of the lower surface plate (1) and connected to the upper end of the hollow shaft (7a) so as to surround the lower surface plate (1). This internal gear (7).

下定盤(1)の下方位置に設けられ中空軸(7a)に接
続された図示ぜぬ第3の駆動機構により矢印(8)方向
に回転するようになっている。さらに、下定盤(1)の
貫通孔(5)Kは前記スプライン軸の外側に中空軸(9
)が挿設されていて、この中空軸(9)の上端部には太
陽歯車([が同軸に連結されている。そして、中空軸(
9)の下端部は図示せぬ第4の駆動機構に接続され、と
の第4の駆動機構により矢印αυ力方向太陽歯車00)
が回転駆動されるように在っている。しかして、インタ
ーナル歯車(力、中空軸(7a) 、中空軸(9)、太
陽歯車0@及び第3.第4の駆動機構は。
The lower surface plate (1) is rotated in the direction of the arrow (8) by a third drive mechanism (not shown) provided below the surface plate (1) and connected to the hollow shaft (7a). Furthermore, the through hole (5) K of the lower surface plate (1) is provided with a hollow shaft (9) on the outside of the spline shaft.
) is inserted, and the sun gear ([ is coaxially connected to the upper end of this hollow shaft (9).
The lower end of 9) is connected to a fourth drive mechanism (not shown), and the fourth drive mechanism drives the sun gear in the direction of the arrow αυ force 00)
is located so that it can be rotated. Therefore, the internal gear (force, hollow shaft (7a), hollow shaft (9), sun gear 0@, and the third and fourth drive mechanisms are.

遊星運動機構α2を構成している。この太陽歯車(IQ
とインターナル歯車(7)との間には、外周部に歯車部
(13a)が形成された平行度及び平面度の良好な円板
状の基板α3)が歯合して介装されて、自転及び公転を
行うようになっている。そうして、との基板a漕の両面
には1両面テープを介して発泡ウレタンシー)(14)
、Q41が貼着されている。さらにこれらウレタンシー
トαa、a4Jに1は1両面テープを介してテンブレー
)(+5)、(1■が貼着されている。これらテンブレ
ー1lls)、(15)には、ウェーッー(16)・・
・を位置決め保持するための卵数の透孔側・・・が等配
して穿設されている。他方、下定盤(1)の上面及び上
定盤(3)の下面には、研磨布(]Lfi81が貼着さ
れている。
It constitutes a planetary movement mechanism α2. This sun gear (IQ
A disc-shaped substrate α3) with good parallelism and flatness and having a gear part (13a) formed on the outer periphery is interposed between and the internal gear (7) in mesh with each other. It is designed to rotate and revolve. Then, attach foamed urethane (urethane foam) (14) to both sides of the substrate A via double-sided tape.
, Q41 is attached. Furthermore, tenbrae) (+5), (1■) are attached to these urethane sheets αa and a4J via double-sided tape.
・The holes on the side of the number of eggs for positioning and holding the eggs are equally spaced and drilled. On the other hand, a polishing cloth (]Lfi81 is attached to the upper surface of the lower surface plate (1) and the lower surface of the upper surface plate (3).

上記構成の研磨装置において、ウレタンシートα→、0
(イ)に水を含浸させ、テンプレートα5)、(15)
の透孔任η・・・部位にウェーハ(10・・・を押付け
る。すると。
In the polishing device with the above configuration, the urethane sheet α→,0
(A) is impregnated with water, template α5), (15)
Press the wafer (10...) onto the through-hole position η... area. Then...

ウェーハ(16)・・・け、ウレタンシート(14)、
(14)に含浸されている水により基板θ■の両側に密
着して保持される。ついで、基板θ■を太陽歯車00及
びインターナル歯車(7)に歯合させた後、上定盤(3
)を下降させて基板(13)を、下定盤(1)と上定盤
(3)とにより挾圧する。しかして、−上定盤(3)を
矢印(6)方向に回転させるとともに、下定盤(1)を
矢印(2)方向に回転させる。
Wafer (16)... Urethane sheet (14),
The water impregnated in (14) holds the substrate θ■ in close contact with both sides. Next, after meshing the board θ■ with the sun gear 00 and the internal gear (7), the upper surface plate (3
) is lowered to clamp the substrate (13) between the lower surface plate (1) and the upper surface plate (3). Thus, -the upper surface plate (3) is rotated in the direction of arrow (6), and the lower surface plate (1) is rotated in the direction of arrow (2).

同時に、太陽歯車α0及びインターナル歯車(7)を回
転駆動して基板(1争を遊星運動させる。さらに、下定
盤(1)と上定盤(3)との間に研磨剤を供給すると、
ウェーハ(10・・・は、ボリシング加工される。
At the same time, the sun gear α0 and the internal gear (7) are rotationally driven to cause the substrate (1) to move in a planetary motion.Furthermore, when an abrasive is supplied between the lower surface plate (1) and the upper surface plate (3),
The wafers (10...) are subjected to a boring process.

このように1本実施例の研磨装置は1両面ボリシング用
の研磨装置を利用したもので、キャリアの代りに平行度
及び平面度の良好な基板03)に水を含浸したウレタン
シートα(1)、 Q4を介してウェーッ・αe・・・
を接着するようにしたので、従来熟練を用していたウェ
ーハ(16)・・・の接着作業が容易かつ簡略になる。
As described above, the polishing apparatus of this embodiment utilizes a polishing apparatus for single-sided boring, and instead of a carrier, a urethane sheet α (1) impregnated with water is used as a substrate 03) with good parallelism and flatness. , Through Q4, αe...
Since the wafers (16) are bonded together, the work of bonding the wafers (16), which conventionally required skill, becomes easier and simpler.

しかも、ワックスの代り1.c水を介して接着している
ので、下定盤(1)と上定盤(3)とによって挾圧され
た際にウェーハ(161・・・は、基板(1りに確実に
密着されるので、基板(131の平面度がそ0ままウエ
ーハ(1e・・・に転写され加工精度が向上する。
Moreover, instead of wax, 1. (c) Since the wafers (161...) are bonded through water, they are firmly attached to the substrate (1) when they are pressed between the lower surface plate (1) and the upper surface plate (3). , the flatness of the substrate (131) is transferred to the wafer (1e...) without changing the flatness, improving processing accuracy.

なお、上記実施例においては、基板0■の両面にウェー
ハ(16)・・・を接着するようにしているが、いずれ
か一方のみにウェーハ06)・・・を接着するようにし
てもよい。この場合、ウェーハ06)・・・を接着しな
い側の基板−の主面及び定盤の主面には、テフロンを被
着させ1円滑に摺動できるようにするとよい。
In the above embodiment, the wafers (16) are bonded to both sides of the substrate 02, but the wafers 06) may be bonded to only one of them. In this case, it is preferable to apply Teflon to the main surface of the substrate on the side to which the wafers 06) are not bonded and the main surface of the surface plate so that they can slide smoothly.

さらに、ウレタンシーH14!、fl□幻の代りに粘着
力によυウェーハ(16)を固着する粘着シートを貼着
してもよい。さらにまた、本発明の研磨装置はポリシン
グのみならず、ラッピングにも拡張して適用できる。
Furthermore, Urethane Sea H14! , fl□ may be replaced by an adhesive sheet that uses adhesive force to fix the υ wafer (16). Furthermore, the polishing apparatus of the present invention can be applied not only to polishing but also to lapping.

〔発明の効果〕〔Effect of the invention〕

本発明の研磨装置1は、ウェーハの接着作業がすこぶる
容易かつ簡略となり、自動化の推進に役立つ。しかも、
ウェーハが接着されている基板の平面贋がその1まウェ
ーハに転写されるので加工精度が向上する。したがって
、この研磨装置は、超LSI (La+4e 5cal
e InteIIrated C1rcuit)素子用
ノウェーハの研磨に適合したものとなっている。
The polishing apparatus 1 of the present invention greatly facilitates and simplifies the work of bonding wafers, and is useful for promoting automation. Moreover,
Processing accuracy is improved because the flat surface of the substrate to which the wafer is bonded is completely transferred to the wafer. Therefore, this polishing device is a super LSI (La+4e 5cal
eInteII rated C1rcuit) It is suitable for polishing wafers for devices.

【図面の簡単な説明】[Brief explanation of drawings]

第1図は従来のウェーッ・接着方法の説明図、第2図は
本発明の一実施例の研磨装置の要部を分解して示す構成
図、第3図は第2図の研磨装置の要部断面図である。 (1)二下定盤、 (3)二上定盤。 Q乃:遊星運動機構、 (13) :基 板。 (14) :ウレタンシート(接着板)。 (1ツ:テンプレート(位置決め板)、(1e:ウェー
ハ(被加工物)。 (17) :透 孔、 餞:研磨布。 代理人 弁理士 則 近 憲 佑 (ほか1名) 第1図 第3図
Fig. 1 is an explanatory diagram of the conventional wafer bonding method, Fig. 2 is an exploded configuration diagram showing the main parts of a polishing apparatus according to an embodiment of the present invention, and Fig. 3 is a main part of the polishing apparatus shown in Fig. 2. FIG. (1) Lower surface plate, (3) Upper surface plate. Qno: Planetary motion mechanism, (13): Substrate. (14): Urethane sheet (adhesive board). (1: Template (positioning plate), (1e: Wafer (workpiece). (17): Through hole, Plate: Polishing cloth. Agent: Patent attorney Kensuke Chika (and 1 other person) Figure 1, Figure 3 figure

Claims (1)

【特許請求の範囲】[Claims] 相対的に接離自在且つ回転駆動自在に般けられ少なくと
も一方の対向面に研磨布が同着された一対の定盤と、上
記一対の定盤間に介装された円板状の基板と、上記基板
を遊星運動させる遊星運動機構と、上記基板の少なくと
もト記研磨布に対向する面に固着され板状の被加工物を
密着して保持する接着板と、上記接着板上に固着され且
つ上記被加工物を位置決めする透孔が穿設された位置決
め板とを具備することを特徴とする研磨装置。
a pair of surface plates that are relatively movable toward and away from each other and rotatably driven, and have a polishing cloth attached to at least one opposing surface; and a disk-shaped substrate interposed between the pair of surface plates. , a planetary movement mechanism for planetary movement of the substrate; an adhesive plate fixed to at least the surface facing the polishing cloth of the substrate and holding the plate-shaped workpiece in close contact; and a bonding plate fixed to the adhesive plate. A polishing apparatus characterized by further comprising: a positioning plate having a through hole for positioning the workpiece.
JP59080213A 1984-04-23 1984-04-23 Polishing machine Pending JPS60228068A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59080213A JPS60228068A (en) 1984-04-23 1984-04-23 Polishing machine

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59080213A JPS60228068A (en) 1984-04-23 1984-04-23 Polishing machine

Publications (1)

Publication Number Publication Date
JPS60228068A true JPS60228068A (en) 1985-11-13

Family

ID=13712101

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59080213A Pending JPS60228068A (en) 1984-04-23 1984-04-23 Polishing machine

Country Status (1)

Country Link
JP (1) JPS60228068A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0788146A1 (en) * 1996-01-31 1997-08-06 Shin-Etsu Handotai Company Limited Method of polishing semiconductor wafers
US5759088A (en) * 1993-02-12 1998-06-02 Kondratenko; Vladimir Stepanovich Process for machining components made of brittle materials and a device for carrying out the same
JP2014104522A (en) * 2012-11-26 2014-06-09 Sumitomo Metal Mining Co Ltd Single-side processing method of wafer and production method of wafer
CN110936286A (en) * 2019-12-03 2020-03-31 江西合力泰科技有限公司 Repair jig, repair machine and repair method

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5759088A (en) * 1993-02-12 1998-06-02 Kondratenko; Vladimir Stepanovich Process for machining components made of brittle materials and a device for carrying out the same
EP0788146A1 (en) * 1996-01-31 1997-08-06 Shin-Etsu Handotai Company Limited Method of polishing semiconductor wafers
JP2014104522A (en) * 2012-11-26 2014-06-09 Sumitomo Metal Mining Co Ltd Single-side processing method of wafer and production method of wafer
CN110936286A (en) * 2019-12-03 2020-03-31 江西合力泰科技有限公司 Repair jig, repair machine and repair method

Similar Documents

Publication Publication Date Title
TWI424484B (en) Wafer grinding method and wafer
JPH09270401A (en) Polishing method of semiconductor wafer
JP3271658B2 (en) Method for lapping or polishing semiconductor silicon single crystal wafer
JPH044744B2 (en)
US6080042A (en) Flatness and throughput of single side polishing of wafers
JPH11254308A (en) Both face grinding device
TWI221643B (en) Partial-membrane carrier head
JPS60228068A (en) Polishing machine
JP2009178806A (en) Polishing carrier, and polishing device
JPS6025649A (en) One-side polishing device by double polishing device
JP2539753B2 (en) Mirror polishing machine for semiconductor substrates
JP2552305B2 (en) Double side polishing machine
JP2001121412A (en) Double side surface polisher
JP3463345B2 (en) Polishing apparatus, polishing method and bonding method
JP4280397B2 (en) Work polishing method
JPH09262761A (en) Method for polishing semi-conductor wafer
JPS62264864A (en) Lapping method for substrate
JPH0547723A (en) Carrier for double side polishing
JP2002036079A (en) Method and device for polishing polished object
JPH02294032A (en) Method and device for polishing wafer
JPH04261768A (en) Double-side lapping device
JPS6125976Y2 (en)
JP4238836B2 (en) Polishing method and polishing apparatus
JPS6114854A (en) Polishing jig
JPH08229784A (en) Method and device for polishing