JPH02294032A - Method and device for polishing wafer - Google Patents

Method and device for polishing wafer

Info

Publication number
JPH02294032A
JPH02294032A JP1114181A JP11418189A JPH02294032A JP H02294032 A JPH02294032 A JP H02294032A JP 1114181 A JP1114181 A JP 1114181A JP 11418189 A JP11418189 A JP 11418189A JP H02294032 A JPH02294032 A JP H02294032A
Authority
JP
Japan
Prior art keywords
polishing
wafer
cloth
surface plate
flatness
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1114181A
Other languages
Japanese (ja)
Other versions
JP2575489B2 (en
Inventor
Mitsuru Ishida
充 石田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Furukawa Electric Co Ltd
Original Assignee
Furukawa Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Furukawa Electric Co Ltd filed Critical Furukawa Electric Co Ltd
Priority to JP1114181A priority Critical patent/JP2575489B2/en
Publication of JPH02294032A publication Critical patent/JPH02294032A/en
Application granted granted Critical
Publication of JP2575489B2 publication Critical patent/JP2575489B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Abstract

PURPOSE:To polish a wafer so as to improve the flatness of the wafer by reducing the polishing quantity at the peripheral section of the wafer in the primary polishing process. CONSTITUTION:When a wafer is polished with a polishing machine using a rotary surface plate 5, polishing cloth 4 having, for example, a grooved peripheral section 4a fitted to the surface plate 5 is used. Then the cloth 4 rotated in the direction shown by the arrow is brought into contact with the wafer for polishing while the wafer 1 is rotated in the same direction. At the time of the polishing, the grooved peripheral section 4a of the cloth 4 is necessarily brought into contact with part of the outer peripheral section of the wafer 1. As a result, polishing quantities at both of the inside and outside surface sections of the wafer 1 can be equalized to each other and the flatness of the wafer 1 after polishing can be improved.

Description

【発明の詳細な説明】 (産業上の利用分野) 本発明はウェハー研磨方法及びそれに用いる研磨装置に
関するものである. (従来の技術) 従来例えば半導体ウェハー等の鏡面研磨方法としては、
両面同時に鏡面にする両面研磨と片面のみ鏡面にする片
面研磨とがある. これら両面研磨、片面研磨は、主としてウェハー表面の
平坦度を良くしおおよその鏡面を得る目的で行われる一
次研磨と、その後さらに平坦度を増して鏡面に仕上げる
二次研磨とからなる.上記一次研磨用の研磨布としては
不織布タイプ硬質研磨布を用い、二次研磨用としては発
泡ウレタンのスエードタイプの研磨布を用いる.(発明
が解決しようとする課題) 以上の従来の技術においては,一次研磨用として硬質の
研磨布を用いることにより、平坦度を増している.しか
しながら単に硬質の研磨布を用いるだけで、この研磨布
自体に対する工夫はなされていなかった. したがって従来の方法により一次研磨を行ったもので両
面研磨あるいは片面研磨を施したものでは、ウェハー周
辺部が内面部に比較して外周方向によけいに研磨される
(周辺部が垂れる》傾向にあり、得られる平坦度には限
界があった.これを具体的に説明すると、例えば第3図
に従来の片面研磨の方法を示す。図中7はウェハー、8
はこのウェハーを接着した接着プレート、9は研磨定盤
、10はこの研磨定盤上に取り付けられた研磨布である
.図示のようにウェハー7及び研磨布10はそれぞれ稼
動軸11.12により回転させ研磨が行われるが、ウェ
ハー周辺部は外周部に向かうにつれて内面部に比較して
よけいに研磨され垂れてしまう。また両面研磨ではウェ
ハーがキャリャの中でフリーな状態であるので、ウェハ
ー上下の周辺部が上下内面部に比較してよけいにかつ均
等に研磨されてしまう。
DETAILED DESCRIPTION OF THE INVENTION (Field of Industrial Application) The present invention relates to a wafer polishing method and a polishing apparatus used therein. (Prior art) Conventional methods for mirror polishing semiconductor wafers, etc.
There are two types of polishing: double-sided polishing, which makes both sides mirror-finished at the same time, and single-sided polishing, which makes only one side mirror-finished. These double-sided polishing and single-sided polishing mainly consist of primary polishing, which is performed to improve the flatness of the wafer surface and obtain an approximately mirror surface, and then secondary polishing, which further increases the flatness and finishes it into a mirror surface. A non-woven hard polishing cloth is used for the primary polishing, and a foamed urethane suede type polishing cloth is used for the secondary polishing. (Problems to be Solved by the Invention) In the above conventional techniques, flatness is increased by using a hard polishing cloth for primary polishing. However, only a hard polishing cloth was used, and no improvements were made to the polishing cloth itself. Therefore, when primary polishing is performed using the conventional method, and double-sided or single-sided polishing is performed, the periphery of the wafer tends to be polished more toward the outer circumference than the inner surface (the periphery tends to sag). However, there was a limit to the flatness that could be obtained. To explain this in detail, for example, the conventional single-sided polishing method is shown in Figure 3. In the figure, 7 is the wafer, 8
is an adhesive plate to which this wafer is bonded, 9 is a polishing surface plate, and 10 is a polishing cloth attached to this polishing surface plate. As shown in the figure, the wafer 7 and the polishing cloth 10 are rotated and polished by operating shafts 11 and 12, respectively, but the periphery of the wafer is polished more and sag toward the outer periphery compared to the inner surface. Furthermore, in double-sided polishing, since the wafer is free in the carrier, the upper and lower peripheral areas of the wafer are polished more and more evenly than the upper and lower inner surfaces.

本発明は一次研磨におけるウェハー周辺部の研磨量を減
らすことによりウェハーの平坦度を高めた研磨が行える
ウェハー研磨方法及びそれに用いる研磨装置を提供する
目的でなされたものである. (課題を解決するための手段) 本発明者等は研磨が研磨液を供給し、研磨布で擦り付け
ることで行われるメカノケミカルボリッシングであり、
機械的作用と化学的作用のバランスが重要である点に着
目して鋭意研究を重ねたところ、ウェハーの平坦度を向
上させるには研磨布の外周部の,ウェハーとの接触面積
を減少させることが有効であることを見出し、この知見
に基づき本発明を完成するに至った。
The present invention has been made for the purpose of providing a wafer polishing method and a polishing apparatus used therein, which can polish a wafer with improved flatness by reducing the amount of polishing of the peripheral area of the wafer during primary polishing. (Means for Solving the Problem) The present inventors believe that polishing is a mechanochemical polishing process in which polishing is performed by supplying a polishing liquid and rubbing it with a polishing cloth.
After intensive research focusing on the importance of the balance between mechanical and chemical effects, we found that in order to improve the flatness of the wafer, it is necessary to reduce the contact area with the wafer on the outer periphery of the polishing cloth. We have found that this is effective, and based on this knowledge, we have completed the present invention.

すなわち本発明は、(1)回転定盤を用いた研磨機によ
りウェハーを研磨するに当り、研磨布として回転定盤に
取り付けた溝付周辺部を有する研磨布を用い、前記ウェ
ハーの外周部が前記研磨布の溝付周辺部に接触するよう
にすることを特徴とするウェハー研磨方法、及び (2)回転定盤を用いた研磨機において、回転定盤上に
、溝付周辺部を周辺部に有する研磨布を設けてなること
を特徴とするウェハー研磨装置、を提供するものである
That is, in the present invention, (1) when polishing a wafer with a polishing machine using a rotating surface plate, a polishing cloth having a grooved peripheral portion attached to the rotating surface plate is used as the polishing cloth, and the outer peripheral portion of the wafer is A wafer polishing method characterized in that the grooved peripheral portion of the polishing cloth is brought into contact with the peripheral portion of the polishing cloth, and (2) a polishing machine using a rotating surface plate, in which the grooved peripheral portion is brought into contact with the peripheral portion of the polishing cloth on the rotating surface plate. A wafer polishing apparatus is provided, characterized in that it is provided with a polishing cloth having a wafer polishing cloth.

(実施例) 次に本発明を実施例に基づいてさらに詳細に説明する. 第1図は本発明におけるウェハーの研磨状態を示す一例
の断面図である.■はウェハー、2はこのウェハーを接
着した接着プレート、3は稼動軸である。また4は研磨
布、5は研磨布を上面に取り付けた研磨定盤であり、6
は稼動軸である.なお、稼動軸3、6はそれぞれ稼動源
(図示せず)に連結されている.上記研磨布4の外周部
には溝ピッチ8mm.満幅3mmの溝を設けてあり、こ
れを溝付周辺部4aとしている.第2図に研磨布4の平
面図を示す。
(Example) Next, the present invention will be explained in more detail based on an example. FIG. 1 is a cross-sectional view of an example showing the polishing state of a wafer in the present invention. 2 is a wafer, 2 is an adhesive plate to which this wafer is bonded, and 3 is an operating shaft. Further, 4 is a polishing cloth, 5 is a polishing surface plate with the polishing cloth attached to the upper surface, and 6
is the operating axis. Note that the operating shafts 3 and 6 are each connected to an operating source (not shown). The outer periphery of the polishing cloth 4 has a groove pitch of 8 mm. A groove with a full width of 3 mm is provided, and this is the grooved peripheral portion 4a. FIG. 2 shows a plan view of the polishing cloth 4.

次に研磨方法について説明すると、第1図に示すように
ウェハー1を矢印方向に回転させながら、矢印方向に回
転している研磨布4にその表面を接触させ研磨する.こ
のときウェハー1の外周部の一部はかならず研磨布4の
溝付周辺部4aに接触するようにして研磨を行う.研磨
の際には研磨液を使用するが、本例ではSins微細砥
粒を含むアルカリ溶液を使用した.この研磨液は上記に
限定するものではな《例えばInsec FP (商品
名、不二見研磨材工業■製) , Nalco 236
0 (商品名、ロデール・ニッタ■WIJ)等を好まし
く使用することができる。また講付周辺部4aの溝は本
例では溝ピッチ8mm、溝幅3mmとして形成したが、
本発明において研磨布に形成する溝付周辺部の溝の形状
等は限定するものではない。溝は例えば溝ピッチ1〜1
0mm、満幅l〜5mmとするのが好ましく、この溝を
付けることで研磨後のウェハー平坦度は、2インチ径で
2μm以下、3インチ径で3μm以下に仕上げることが
可能である.これが第3図の従来法では2インチ径で5
μm、3インチ径で8μm程度の平坦度であった. なお、上記の研磨の後に仕上げ研磨を行うことにより、
研磨が完了する. 本例は片面研磨についての例であるが両面研磨について
も上定盤及び下定盤に同様の研磨布を使用することで適
用できる。
Next, the polishing method will be described. As shown in FIG. 1, the wafer 1 is rotated in the direction of the arrow, and its surface is brought into contact with the polishing cloth 4 rotating in the direction of the arrow. At this time, polishing is performed so that a part of the outer circumference of the wafer 1 is always in contact with the grooved peripheral part 4a of the polishing cloth 4. A polishing liquid is used during polishing, and in this example, an alkaline solution containing Sins fine abrasive grains was used. This polishing liquid is not limited to those mentioned above. For example, Insec FP (trade name, manufactured by Fujimi Abrasives Industry ■), Nalco 236
0 (trade name, Rodel Nitta WIJ), etc. can be preferably used. Furthermore, in this example, the grooves in the peripheral part 4a of the mounting were formed with a groove pitch of 8 mm and a groove width of 3 mm.
In the present invention, the shape of the grooves in the grooved peripheral portion formed on the polishing cloth is not limited. For example, the groove has a groove pitch of 1 to 1.
It is preferable that the groove has a full width of 0 mm and a full width of 1 to 5 mm, and by providing this groove, the wafer flatness after polishing can be finished to 2 μm or less for a 2-inch diameter and 3 μm or less for a 3-inch diameter. In the conventional method shown in Fig. 3, this is 5 mm with a 2 inch diameter.
The flatness was approximately 8 μm with a diameter of 3 inches. In addition, by performing final polishing after the above polishing,
Polishing is complete. Although this example concerns single-sided polishing, it can also be applied to double-sided polishing by using similar polishing cloths for the upper and lower surface plates.

(作用) 本発明は研磨布の周辺に溝付周辺部を形成して、この溝
付周辺部を研磨時にウェハー外周部に接触するようにし
たために、ウェハー外周部の研@量を内面部と同等とす
ることができ、ウェハー周辺部の垂れを抑制することが
できる.(発明の効果) 以上説明したように本発明によれば、ウェハー内面部と
外周部との研磨量を同等とすることができ、研磨完了後
のウェハー平坦度を従来にな《向上させ得る.これによ
り得られたウェハーへ微細パターンを形成する際にはビ
ントずれが少なくなる。
(Function) In the present invention, a grooved peripheral portion is formed around the polishing cloth so that the grooved peripheral portion comes into contact with the outer peripheral portion of the wafer during polishing, so that the amount of polishing on the outer peripheral portion of the wafer is equal to that on the inner surface. It is possible to maintain the same level of performance, and to suppress sagging at the periphery of the wafer. (Effects of the Invention) As explained above, according to the present invention, it is possible to equalize the amount of polishing on the inner surface of the wafer and the outer circumference, and the flatness of the wafer after polishing is improved compared to the conventional method. This reduces bint deviation when forming fine patterns on the resulting wafer.

【図面の簡単な説明】[Brief explanation of drawings]

第1図は本発明の一実施態様を示す断面図、第2図はそ
れに用いた研磨布の平面図、第3図は従来の研磨態様を
示す断面図である. 符号の説明 1.7・・・ウェハー,2,8・・・接着プレート、3
,6,11.12・・・稼動軸、4,IO・・・研磨布
、4a・・・溝付周辺部、5.9・・・研磨定盤.第1
図 6稼動軸 第2図
FIG. 1 is a sectional view showing one embodiment of the present invention, FIG. 2 is a plan view of a polishing cloth used therein, and FIG. 3 is a sectional view showing a conventional polishing mode. Explanation of symbols 1.7...Wafer, 2,8...Adhesive plate, 3
, 6, 11. 12... Operating axis, 4, IO... Polishing cloth, 4a... Grooved peripheral portion, 5.9... Polishing surface plate. 1st
Figure 6 Operating axis diagram 2

Claims (2)

【特許請求の範囲】[Claims] (1)回転定盤を用いた研磨機によりウェハーを研磨す
るに当り、回転定盤に取り付けた、溝付周辺部を有する
研磨布を用い、前記ウェハーの外周部が前記研磨布の溝
付周辺部に接触するようにすることを特徴とするウェハ
ー研磨方法。
(1) When polishing a wafer with a polishing machine using a rotating surface plate, a polishing cloth attached to the rotating surface plate and having a grooved periphery is used, and the outer periphery of the wafer is attached to the grooved periphery of the polishing cloth. A wafer polishing method characterized by bringing the wafer into contact with the wafer.
(2)回転定盤を用いた研磨機において、回転定盤上に
、溝付周辺部を周辺部に有する研磨布を設けてなること
を特徴とするウェハー研磨装置。
(2) A wafer polishing apparatus using a rotating surface plate, characterized in that a polishing cloth having a grooved peripheral portion at the peripheral portion is provided on the rotating surface plate.
JP1114181A 1989-05-09 1989-05-09 Wafer polishing method and polishing apparatus Expired - Lifetime JP2575489B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1114181A JP2575489B2 (en) 1989-05-09 1989-05-09 Wafer polishing method and polishing apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1114181A JP2575489B2 (en) 1989-05-09 1989-05-09 Wafer polishing method and polishing apparatus

Publications (2)

Publication Number Publication Date
JPH02294032A true JPH02294032A (en) 1990-12-05
JP2575489B2 JP2575489B2 (en) 1997-01-22

Family

ID=14631223

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1114181A Expired - Lifetime JP2575489B2 (en) 1989-05-09 1989-05-09 Wafer polishing method and polishing apparatus

Country Status (1)

Country Link
JP (1) JP2575489B2 (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4317750A1 (en) * 1992-05-27 1993-12-02 Micron Technology Inc Device for planarizing semiconductor wafers
US5873772A (en) * 1997-04-10 1999-02-23 Komatsu Electronic Metals Co., Ltd. Method for polishing the top and bottom of a semiconductor wafer simultaneously
JP2007111852A (en) * 2005-09-26 2007-05-10 Hoya Corp Manufacturing method for glass substrate for magnetic disk, manufacturing method for magnetic disk, and abrasive cloth
JP2008221368A (en) * 2007-03-09 2008-09-25 Toyo Tire & Rubber Co Ltd Stacked polishing pad

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4317750A1 (en) * 1992-05-27 1993-12-02 Micron Technology Inc Device for planarizing semiconductor wafers
US5873772A (en) * 1997-04-10 1999-02-23 Komatsu Electronic Metals Co., Ltd. Method for polishing the top and bottom of a semiconductor wafer simultaneously
JP2007111852A (en) * 2005-09-26 2007-05-10 Hoya Corp Manufacturing method for glass substrate for magnetic disk, manufacturing method for magnetic disk, and abrasive cloth
JP2008221368A (en) * 2007-03-09 2008-09-25 Toyo Tire & Rubber Co Ltd Stacked polishing pad

Also Published As

Publication number Publication date
JP2575489B2 (en) 1997-01-22

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