DE158928C - - Google Patents

Info

Publication number
DE158928C
DE158928C DENDAT158928D DE158928DA DE158928C DE 158928 C DE158928 C DE 158928C DE NDAT158928 D DENDAT158928 D DE NDAT158928D DE 158928D A DE158928D A DE 158928DA DE 158928 C DE158928 C DE 158928C
Authority
DE
Germany
Prior art keywords
celluloid
wicks
acetone
cotton fiber
wick
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
DENDAT158928D
Other languages
German (de)
English (en)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Publication of DE158928C publication Critical patent/DE158928C/de
Active legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/40—Resistors
    • H10D1/47—Resistors having no potential barriers
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11C—FATTY ACIDS FROM FATS, OILS OR WAXES; CANDLES; FATS, OILS OR FATTY ACIDS BY CHEMICAL MODIFICATION OF FATS, OILS, OR FATTY ACIDS OBTAINED THEREFROM
    • C11C5/00—Candles
    • C11C5/002—Ingredients
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/62—Electrodes ohmically coupled to a semiconductor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Wood Science & Technology (AREA)
  • Organic Chemistry (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Drying Of Semiconductors (AREA)
  • Thin Film Transistor (AREA)
  • Fats And Perfumes (AREA)
  • Electrodes Of Semiconductors (AREA)
DENDAT158928D 1966-09-26 Active DE158928C (en, 2012)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US58205366A 1966-09-26 1966-09-26
US59516366A 1966-11-17 1966-11-17

Publications (1)

Publication Number Publication Date
DE158928C true DE158928C (en, 2012)

Family

ID=27078481

Family Applications (3)

Application Number Title Priority Date Filing Date
DENDAT158928D Active DE158928C (en, 2012) 1966-09-26
DE1789194A Ceased DE1789194B1 (de) 1966-09-26 1967-09-26 Verfahren zur Herstellung eines Feldeffekttransistors
DE1589852A Ceased DE1589852B2 (de) 1966-09-26 1967-09-26 Feldeffekttransistor

Family Applications After (2)

Application Number Title Priority Date Filing Date
DE1789194A Ceased DE1789194B1 (de) 1966-09-26 1967-09-26 Verfahren zur Herstellung eines Feldeffekttransistors
DE1589852A Ceased DE1589852B2 (de) 1966-09-26 1967-09-26 Feldeffekttransistor

Country Status (2)

Country Link
DE (3) DE1789194B1 (en, 2012)
GB (1) GB1186625A (en, 2012)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2020531C2 (de) * 1970-04-27 1982-10-21 Siemens AG, 1000 Berlin und 8000 München Verfahren zur Herstellung von Silizium-Höchstfrequenz-Planartransistoren
JPS4982257A (en, 2012) * 1972-12-12 1974-08-08
US4297721A (en) 1978-11-03 1981-10-27 Mostek Corporation Extremely low current load device for integrated circuit
JPS58165341A (ja) * 1982-03-26 1983-09-30 Toshiba Corp 半導体装置の製造方法
JPH0529329A (ja) * 1991-07-24 1993-02-05 Canon Inc 半導体装置の製造方法
DE102007041229A1 (de) * 2007-08-31 2009-03-05 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Schaltungsanordnung und ein Verfahren zum Verkapseln derselben

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3189973A (en) * 1961-11-27 1965-06-22 Bell Telephone Labor Inc Method of fabricating a semiconductor device

Also Published As

Publication number Publication date
DE1589852B2 (de) 1979-08-02
GB1186625A (en) 1970-04-02
DE1589852A1 (de) 1970-08-06
DE1789194B1 (de) 1980-04-10

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