GB1186625A - Improvements in and relating to Semiconductor Devices - Google Patents
Improvements in and relating to Semiconductor DevicesInfo
- Publication number
- GB1186625A GB1186625A GB4377267A GB4377267A GB1186625A GB 1186625 A GB1186625 A GB 1186625A GB 4377267 A GB4377267 A GB 4377267A GB 4377267 A GB4377267 A GB 4377267A GB 1186625 A GB1186625 A GB 1186625A
- Authority
- GB
- United Kingdom
- Prior art keywords
- layer
- oxide layer
- openings
- etched
- resistor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 title abstract 4
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 abstract 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 abstract 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract 2
- 229910052782 aluminium Inorganic materials 0.000 abstract 2
- 239000004411 aluminium Substances 0.000 abstract 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract 2
- 229910052710 silicon Inorganic materials 0.000 abstract 2
- 239000010703 silicon Substances 0.000 abstract 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 abstract 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 abstract 1
- 229960000583 acetic acid Drugs 0.000 abstract 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 abstract 1
- 229910052796 boron Inorganic materials 0.000 abstract 1
- 239000005388 borosilicate glass Substances 0.000 abstract 1
- 239000012159 carrier gas Substances 0.000 abstract 1
- 238000009792 diffusion process Methods 0.000 abstract 1
- 230000005669 field effect Effects 0.000 abstract 1
- 239000012362 glacial acetic acid Substances 0.000 abstract 1
- 238000010438 heat treatment Methods 0.000 abstract 1
- 238000004519 manufacturing process Methods 0.000 abstract 1
- 239000000463 material Substances 0.000 abstract 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 abstract 1
- 229910017604 nitric acid Inorganic materials 0.000 abstract 1
- 239000001301 oxygen Substances 0.000 abstract 1
- 229910052760 oxygen Inorganic materials 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- FAQYAMRNWDIXMY-UHFFFAOYSA-N trichloroborane Chemical compound ClB(Cl)Cl FAQYAMRNWDIXMY-UHFFFAOYSA-N 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/20—Resistors
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11C—FATTY ACIDS FROM FATS, OILS OR WAXES; CANDLES; FATS, OILS OR FATTY ACIDS BY CHEMICAL MODIFICATION OF FATS, OILS, OR FATTY ACIDS OBTAINED THEREFROM
- C11C5/00—Candles
- C11C5/002—Ingredients
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/45—Ohmic electrodes
Abstract
1,186,625. Semi-conductor devices; resistors. PHILCO-FORD CORP. 26 Sept., 1967 [26 Sept., 1966; 17 Nov., 1966], No. 43772/67. Headings H1K and H1S. A semi-conductor device comprises a body of semi-conductor material, an oxide layer on a surface of the body, and a layer of polycrystalline silicon on a surface of the oxide layer, the silicon forming a resistor or the insulated gate of a field effect transistor. In a preferred method of making the device, a monocrystalline silicon wafer 30 (Fig. 8) is provided with a grown or deposited silicon dioxide layer 31, a polycrystalline silicon layer 35 and a further oxide layer 36, and openings 38, 39 are etched in the layer 36 to expose the layer 35 and surround a gate region G and a resistor region R. Openings 41, 42 are then etched in the layer 35 with a solution comprising 15 parts (by volume) of concentrated nitric acid, 5 parts of glacial acetic acid and 2 parts of concentrated hydrofluoric acid using the oxide layer 36 as a mask, and openings 44a, 44b (Fig. 10) are etched in the first oxide layer 31 to expose the portions of the silicon wafer 30 which are to form the source and drain regions of the transistor. At the same time the portion of the oxide layer 36 above the gate region is removed and openings 45 are etched in this layer where the resistor contact pads are to be formed. The device is next subjected to a boron diffusion, e.g. by heating it to 1150‹ C. for 60 minutes in an atmosphere containing boron trichloride, oxygen and a carrier gas so that source and drain regions 50,51 (Fig. 16) are provided in the wafer 30 and the gate. and the resistor contact. pads axe doped to a low resistivity. Another oxide layer 55 is then grown and partially removed to form openings (60-64, Fig. 15, not shown) and aluminium 70 is vapour deposited to contact the source and drain regions and the gate and resistor contact pads through the openings. Finally, the aluminium is selectively removed to form the required contact pattern. A plurality of devices may be formed simultaneously in a single wafer which is subsequently diced, and each die may be encapsulated in borosilicate glass and sealed in a header. Portions of the layer 35 may be used as crossunders where needed.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US58205366A | 1966-09-26 | 1966-09-26 | |
| US59516366A | 1966-11-17 | 1966-11-17 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1186625A true GB1186625A (en) | 1970-04-02 |
Family
ID=27078481
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB4377267A Expired GB1186625A (en) | 1966-09-26 | 1967-09-26 | Improvements in and relating to Semiconductor Devices |
Country Status (2)
| Country | Link |
|---|---|
| DE (3) | DE1789194B1 (en) |
| GB (1) | GB1186625A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2020531A1 (en) * | 1970-04-27 | 1971-11-18 | Siemens Ag | Method for manufacturing a semiconductor component |
| EP0090520A2 (en) * | 1982-03-26 | 1983-10-05 | Kabushiki Kaisha Toshiba | A method of manufacturing a semiconductor device for forming a deep field region in a semiconductor substrate |
| US5731240A (en) * | 1991-07-24 | 1998-03-24 | Canon Kabushiki Kaisha | Manufacturing method for semiconductor depositing device |
| WO2009030336A1 (en) * | 2007-08-31 | 2009-03-12 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Circuit arrangement and method for the encapsulation thereof |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4982257A (en) * | 1972-12-12 | 1974-08-08 |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3189973A (en) * | 1961-11-27 | 1965-06-22 | Bell Telephone Labor Inc | Method of fabricating a semiconductor device |
-
0
- DE DENDAT158928D patent/DE158928C/de active Active
-
1967
- 1967-09-26 GB GB4377267A patent/GB1186625A/en not_active Expired
- 1967-09-26 DE DE19671789194 patent/DE1789194B1/en not_active Ceased
- 1967-09-26 DE DE1967G0051179 patent/DE1589852B2/en not_active Ceased
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2020531A1 (en) * | 1970-04-27 | 1971-11-18 | Siemens Ag | Method for manufacturing a semiconductor component |
| EP0090520A2 (en) * | 1982-03-26 | 1983-10-05 | Kabushiki Kaisha Toshiba | A method of manufacturing a semiconductor device for forming a deep field region in a semiconductor substrate |
| EP0090520B1 (en) * | 1982-03-26 | 1989-05-31 | Kabushiki Kaisha Toshiba | A method of manufacturing a semiconductor device for forming a deep field region in a semiconductor substrate |
| US5731240A (en) * | 1991-07-24 | 1998-03-24 | Canon Kabushiki Kaisha | Manufacturing method for semiconductor depositing device |
| WO2009030336A1 (en) * | 2007-08-31 | 2009-03-12 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Circuit arrangement and method for the encapsulation thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| DE1589852A1 (en) | 1970-08-06 |
| DE158928C (en) | |
| DE1789194B1 (en) | 1980-04-10 |
| DE1589852B2 (en) | 1979-08-02 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PS | Patent sealed | ||
| PLE | Entries relating assignments, transmissions, licences in the register of patents | ||
| 429A | Application made for amendment of specification (sect. 29/1949) | ||
| 429H | Application (made) for amendment of specification now open to opposition (sect. 29/1949) | ||
| 429D | Case decided by the comptroller ** specification amended (sect. 29/1949) | ||
| SPA | Amended specification published | ||
| PE20 | Patent expired after termination of 20 years |