GB1327204A - Semiconductor devices - Google Patents
Semiconductor devicesInfo
- Publication number
- GB1327204A GB1327204A GB1327204DA GB1327204A GB 1327204 A GB1327204 A GB 1327204A GB 1327204D A GB1327204D A GB 1327204DA GB 1327204 A GB1327204 A GB 1327204A
- Authority
- GB
- United Kingdom
- Prior art keywords
- layer
- layers
- semi
- heating
- gaps
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 title abstract 4
- 239000010410 layer Substances 0.000 abstract 22
- 239000010931 gold Substances 0.000 abstract 5
- 238000010438 heat treatment Methods 0.000 abstract 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 abstract 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 abstract 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 abstract 2
- 230000008021 deposition Effects 0.000 abstract 2
- 239000012535 impurity Substances 0.000 abstract 2
- 229910052698 phosphorus Inorganic materials 0.000 abstract 2
- 239000011574 phosphorus Substances 0.000 abstract 2
- XHXFXVLFKHQFAL-UHFFFAOYSA-N phosphoryl trichloride Chemical compound ClP(Cl)(Cl)=O XHXFXVLFKHQFAL-UHFFFAOYSA-N 0.000 abstract 2
- SJUCACGNNJFHLB-UHFFFAOYSA-N O=C1N[ClH](=O)NC2=C1NC(=O)N2 Chemical compound O=C1N[ClH](=O)NC2=C1NC(=O)N2 SJUCACGNNJFHLB-UHFFFAOYSA-N 0.000 abstract 1
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 abstract 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- 230000005587 bubbling Effects 0.000 abstract 1
- 239000000969 carrier Substances 0.000 abstract 1
- 238000005530 etching Methods 0.000 abstract 1
- 238000005247 gettering Methods 0.000 abstract 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 abstract 1
- 229910052737 gold Inorganic materials 0.000 abstract 1
- 238000007654 immersion Methods 0.000 abstract 1
- 238000004519 manufacturing process Methods 0.000 abstract 1
- 230000000873 masking effect Effects 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 229910052757 nitrogen Inorganic materials 0.000 abstract 1
- 229910052760 oxygen Inorganic materials 0.000 abstract 1
- 239000001301 oxygen Substances 0.000 abstract 1
- 150000003003 phosphines Chemical class 0.000 abstract 1
- 239000010453 quartz Substances 0.000 abstract 1
- 238000011084 recovery Methods 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 1
- 238000010583 slow cooling Methods 0.000 abstract 1
- 239000002344 surface layer Substances 0.000 abstract 1
- 238000005406 washing Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
- H01L23/291—Oxides or nitrides or carbides, e.g. ceramics, glass
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Thyristors (AREA)
Abstract
1327204 Semi-conductor devices ASSOCIATED ELECTRICAL INDUSTRIES Ltd 24 Jan 1972 [17 Feb 1971] 4828/71 Heading H1K A thyristor comprises (Fig. 1) a Si semi-conductor body 1 having PNP-layers 2, 3, 4 of alternate conductivity types; N-layer 5 extending from the outer face into P-layer 2. Conducting electrode layers 6, 7 are formed on the respective outer faces of layers 5, 4 and layer 6 also overlaps the exposed surface of layer 2 surrounding layer 5; while conducting layer 8 constitutes a trigger and contacts layer 2. Gold is introduced into layer 3 as a lifetime reducing impurity for minority carriers in restricted regions 9 also extending through layer 4; so as to improve recovery. In manufacture (Figs. 2, 3) the body containing layers 2, 3, 4, 5 and before deposition of layers 6, 7, 8 is strongly heating in nitrogen in a quartz furnace tube; and oxygen is introduced after bubbling through phosphorus oxychloride; to deposit a vitreous surface layer 10 of phosphorus silicate. Further heating in absence of oxygen forms an underlying phosphorus doped silicon layer 11. Slow cooling getters fast diffusing impurities by trapping in layers 10, 11, which are selectively removed by wax masking and etching first in HF and then in HNO 3 + HF. After removal of wax and washing, a layer 12 of Au is deposited (Fig. 3) by immersion in dilute chlorauric acid. Thereafter, heating in N 2 diffuses Au through gaps 13 to form regions 9, and the gettering layer 10, 11 inhibits deposition of Au except in the gaps. Layers 10, 11 and corresponding Au layers are etched off and electrode layers 6, 5 are deposited. Layers 10, 11 may be formed by using O 2 mixed with gaseous phosphines or P 2 O 5 vapour. The process is applicable to other semi-conductor devices.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB482871 | 1972-01-24 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1327204A true GB1327204A (en) | 1973-08-15 |
Family
ID=9784563
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB1327204D Expired GB1327204A (en) | 1972-01-24 | 1972-01-24 | Semiconductor devices |
Country Status (1)
| Country | Link |
|---|---|
| GB (1) | GB1327204A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2275887A1 (en) * | 1974-05-28 | 1976-01-16 | Gen Electric | SEMICONDUCTOR COMPONENTS WITH REGULATED LIFETIME OF LOAD RECOMBINATION |
| FR2354636A1 (en) * | 1976-06-09 | 1978-01-06 | Siemens Ag | SEMICONDUCTOR COMPONENT |
| FR2383523A2 (en) * | 1977-03-11 | 1978-10-06 | Siemens Ag | SEMICONDUCTOR COMPONENT |
| EP0015064A1 (en) * | 1979-01-31 | 1980-09-03 | Fujitsu Limited | Process for producing bipolar semiconductor device |
| FR2462022A1 (en) * | 1979-07-24 | 1981-02-06 | Silicium Semiconducteur Ssc | Thyristor or triac mfr. process - includes diffusion of gold through windows in glass layer deposited over semiconductor |
-
1972
- 1972-01-24 GB GB1327204D patent/GB1327204A/en not_active Expired
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2275887A1 (en) * | 1974-05-28 | 1976-01-16 | Gen Electric | SEMICONDUCTOR COMPONENTS WITH REGULATED LIFETIME OF LOAD RECOMBINATION |
| FR2354636A1 (en) * | 1976-06-09 | 1978-01-06 | Siemens Ag | SEMICONDUCTOR COMPONENT |
| FR2383523A2 (en) * | 1977-03-11 | 1978-10-06 | Siemens Ag | SEMICONDUCTOR COMPONENT |
| EP0015064A1 (en) * | 1979-01-31 | 1980-09-03 | Fujitsu Limited | Process for producing bipolar semiconductor device |
| FR2462022A1 (en) * | 1979-07-24 | 1981-02-06 | Silicium Semiconducteur Ssc | Thyristor or triac mfr. process - includes diffusion of gold through windows in glass layer deposited over semiconductor |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PS | Patent sealed | ||
| PCNP | Patent ceased through non-payment of renewal fee |