DE1490927C3 - Verfahren zur Herstellung eines Schicht Widerstandselementes unter Verwendung von Tantalmtnd - Google Patents
Verfahren zur Herstellung eines Schicht Widerstandselementes unter Verwendung von TantalmtndInfo
- Publication number
- DE1490927C3 DE1490927C3 DE1490927A DE1490927A DE1490927C3 DE 1490927 C3 DE1490927 C3 DE 1490927C3 DE 1490927 A DE1490927 A DE 1490927A DE 1490927 A DE1490927 A DE 1490927A DE 1490927 C3 DE1490927 C3 DE 1490927C3
- Authority
- DE
- Germany
- Prior art keywords
- layer
- tantalum nitride
- cathode
- tantalum
- sheet
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000000034 method Methods 0.000 title claims description 21
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 title claims description 12
- 238000004519 manufacturing process Methods 0.000 title claims description 10
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 38
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 claims description 21
- 229910052757 nitrogen Inorganic materials 0.000 claims description 19
- 238000004544 sputter deposition Methods 0.000 claims description 19
- 229910052715 tantalum Inorganic materials 0.000 claims description 11
- 238000000889 atomisation Methods 0.000 claims description 10
- 229910052751 metal Inorganic materials 0.000 claims description 10
- 239000002184 metal Substances 0.000 claims description 10
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 9
- 239000010931 gold Substances 0.000 claims description 9
- 229910052737 gold Inorganic materials 0.000 claims description 9
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 8
- 238000000151 deposition Methods 0.000 claims description 7
- 230000008021 deposition Effects 0.000 claims description 7
- 230000032683 aging Effects 0.000 claims description 4
- 229910052786 argon Inorganic materials 0.000 claims description 4
- 150000004767 nitrides Chemical class 0.000 claims description 4
- 230000001105 regulatory effect Effects 0.000 claims description 3
- 238000010410 dusting Methods 0.000 claims description 2
- 238000010438 heat treatment Methods 0.000 claims description 2
- 239000010410 layer Substances 0.000 claims 15
- 150000002739 metals Chemical class 0.000 claims 3
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 claims 3
- 239000003990 capacitor Substances 0.000 claims 1
- 238000000354 decomposition reaction Methods 0.000 claims 1
- 150000001247 metal acetylides Chemical class 0.000 claims 1
- 230000003647 oxidation Effects 0.000 claims 1
- 238000007254 oxidation reaction Methods 0.000 claims 1
- 239000011241 protective layer Substances 0.000 claims 1
- 238000000926 separation method Methods 0.000 claims 1
- 239000010409 thin film Substances 0.000 claims 1
- FAPWRFPIFSIZLT-UHFFFAOYSA-M Sodium chloride Chemical compound [Na+].[Cl-] FAPWRFPIFSIZLT-UHFFFAOYSA-M 0.000 description 8
- 239000000758 substrate Substances 0.000 description 6
- 239000011521 glass Substances 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- 239000011780 sodium chloride Substances 0.000 description 4
- 239000002244 precipitate Substances 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 238000009835 boiling Methods 0.000 description 2
- 239000012459 cleaning agent Substances 0.000 description 2
- 239000012153 distilled water Substances 0.000 description 2
- 230000000873 masking effect Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- 206010000210 abortion Diseases 0.000 description 1
- 231100000176 abortion Toxicity 0.000 description 1
- QZPSXPBJTPJTSZ-UHFFFAOYSA-N aqua regia Chemical compound Cl.O[N+]([O-])=O QZPSXPBJTPJTSZ-UHFFFAOYSA-N 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000010411 cooking Methods 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 239000003599 detergent Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000002003 electron diffraction Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 229910052500 inorganic mineral Inorganic materials 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 210000003734 kidney Anatomy 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 239000011707 mineral Substances 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 238000005086 pumping Methods 0.000 description 1
- 239000011819 refractory material Substances 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 238000003878 thermal aging Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C17/00—Apparatus or processes specially adapted for manufacturing resistors
- H01C17/06—Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base
- H01C17/075—Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base by thin film techniques
- H01C17/12—Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base by thin film techniques by sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/0021—Reactive sputtering or evaporation
- C23C14/0036—Reactive sputtering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
- H01C7/006—Thin film resistors
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
- Y10T29/49082—Resistor making
- Y10T29/49099—Coating resistive material on a base
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/26—Web or sheet containing structurally defined element or component, the element or component having a specified physical dimension
- Y10T428/263—Coating layer not in excess of 5 mils thick or equivalent
- Y10T428/264—Up to 3 mils
- Y10T428/265—1 mil or less
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Electromagnetism (AREA)
- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
- Non-Adjustable Resistors (AREA)
- Apparatuses And Processes For Manufacturing Resistors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US142702A US3242006A (en) | 1961-10-03 | 1961-10-03 | Tantalum nitride film resistor |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| DE1490927A1 DE1490927A1 (de) | 1969-11-13 |
| DE1490927B2 DE1490927B2 (de) | 1973-04-12 |
| DE1490927C3 true DE1490927C3 (de) | 1973-10-31 |
Family
ID=22500933
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE1490927A Expired DE1490927C3 (de) | 1961-10-03 | 1962-09-08 | Verfahren zur Herstellung eines Schicht Widerstandselementes unter Verwendung von Tantalmtnd |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US3242006A (enExample) |
| BE (2) | BE623060A (enExample) |
| DE (1) | DE1490927C3 (enExample) |
| FR (1) | FR1334290A (enExample) |
| GB (1) | GB1015143A (enExample) |
| NL (2) | NL124711C (enExample) |
| SE (1) | SE308151B (enExample) |
Families Citing this family (28)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3369991A (en) * | 1965-01-28 | 1968-02-20 | Ibm | Apparatus for cathode sputtering including a shielded rf electrode |
| US3413711A (en) * | 1966-09-07 | 1968-12-03 | Western Electric Co | Method of making palladium copper contact for soldering |
| US3537891A (en) * | 1967-09-25 | 1970-11-03 | Gen Electric | Resistor films of transition metal nitrides and method of forming |
| US3516914A (en) * | 1968-02-26 | 1970-06-23 | United Aircraft Corp | Aluminum masking of active components during tantalum/nitride sputtering |
| US3639165A (en) * | 1968-06-20 | 1972-02-01 | Gen Electric | Resistor thin films formed by low-pressure deposition of molybdenum and tungsten |
| US3607384A (en) * | 1968-07-11 | 1971-09-21 | Western Electric Co | Thin-film resistors having positive resistivity profiles |
| US3574143A (en) * | 1969-02-19 | 1971-04-06 | Bell Telephone Labor Inc | Resistive composition of matter and device utilizing same |
| US3664943A (en) * | 1969-06-25 | 1972-05-23 | Oki Electric Ind Co Ltd | Method of producing tantalum nitride film resistors |
| US3622410A (en) * | 1969-12-18 | 1971-11-23 | Control Data Corp | Method of fabricating film resistors |
| US3655544A (en) * | 1970-03-02 | 1972-04-11 | Gen Electric | Refractory metal/refractory metal nitride resistor films |
| US3664931A (en) * | 1970-07-27 | 1972-05-23 | Dieter Gerstenberg | Method for fabrication of thin film capacitor |
| FR2112667A5 (enExample) * | 1970-11-05 | 1972-06-23 | Lignes Telegraph Telephon | |
| BE793097A (fr) * | 1971-12-30 | 1973-04-16 | Western Electric Co | Procede pour ajuster le coefficient de resistance en fonction de la temperature d'alliages tantale-aluminium |
| BE791139A (fr) * | 1972-01-14 | 1973-03-01 | Western Electric Co | Procede pour le depot de beta-tantale dope par l'azote |
| US3847658A (en) * | 1972-01-14 | 1974-11-12 | Western Electric Co | Article of manufacture having a film comprising nitrogen-doped beta tantalum |
| US3775278A (en) * | 1972-03-22 | 1973-11-27 | Bell Telephone Labor Inc | Technique for the fabrication of thin film resistors |
| US3912612A (en) * | 1972-07-14 | 1975-10-14 | Westinghouse Electric Corp | Method for making thin film superconductors |
| US3916075A (en) * | 1972-07-22 | 1975-10-28 | Philips Corp | Chemically highly resistant material |
| US4325048A (en) * | 1980-02-29 | 1982-04-13 | Gould Inc. | Deformable flexure element for strain gage transducer and method of manufacture |
| DE3113745A1 (de) * | 1981-04-04 | 1982-10-21 | Robert Bosch Gmbh, 7000 Stuttgart | Duennschicht-dehnungsmessstreifen und verfahren zu seiner herstellung |
| JPS61255001A (ja) * | 1985-05-07 | 1986-11-12 | 富士ゼロックス株式会社 | サ−マルヘツド |
| US5201923A (en) * | 1990-07-27 | 1993-04-13 | Toshiba Tungaloy Co., Ltd. | Stoichiometric b1-type tantalum nitride and a sintered body thereof and method of synthesizing the b1-type tantalum nitride |
| WO1992007968A1 (en) * | 1990-10-26 | 1992-05-14 | International Business Machines Corporation | STRUCTURE AND METHOD OF MAKING ALPHA-Ta IN THIN FILMS |
| US5221449A (en) * | 1990-10-26 | 1993-06-22 | International Business Machines Corporation | Method of making Alpha-Ta thin films |
| FR2679651B1 (fr) * | 1991-07-26 | 1993-11-12 | Schlumberger Services Petroliers | Couche mince extensometrique en cermet a base de tantale et de nitrate de tantale, son procede de preparation et son utilisation dans un capteur de pression. |
| EP0630749B1 (en) | 1993-06-28 | 1998-12-23 | Canon Kabushiki Kaisha | Heat generating resistor containing TaN0.8, substrate provided with said heat generating resistor for liquid jet head, liquid jet head provided with said substrate, and liquid jet apparatus provided with said liquid jet head |
| JP3155423B2 (ja) | 1993-06-28 | 2001-04-09 | キヤノン株式会社 | 発熱抵抗体、該発熱抵抗体を備えた液体吐出ヘッド用基体、該基体を備えた液体吐出ヘッド、及び該液体吐出ヘッドを備えた液体吐出装置 |
| JPH09120713A (ja) * | 1995-10-25 | 1997-05-06 | Murata Mfg Co Ltd | 抵抗材料組成物 |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US420881A (en) * | 1890-02-04 | Rudolf langhans | ||
| US896341A (en) * | 1904-11-14 | 1908-08-18 | Gen Electric | Filament for incandescent lamps. |
| US1123585A (en) * | 1913-05-31 | 1915-01-05 | Int Agricultural Corp | Double-nitrid composition of matter. |
| AT86825B (de) * | 1920-06-14 | 1921-12-27 | Hugo Janistyn | Verfahren zur Herstellung von Glühkörpern für Beleuchtungs- und Durchleuchtungszwecke. |
| US2003592A (en) * | 1933-01-03 | 1935-06-04 | Globar Corp | Glaze for nonmetallic resistors |
| DE1069448B (de) * | 1953-11-16 | 1959-11-19 | MetallgeseMschaft Aktiengesellschaft, Frankfurt/M | Zahnräder |
| GB830391A (en) * | 1955-10-28 | 1960-03-16 | Edwards High Vacuum Ltd | Improvements in or relating to cathodic sputtering of metal and dielectric films |
| US2917442A (en) * | 1955-12-30 | 1959-12-15 | Electronique & Automatisme Sa | Method of making electroluminescent layers |
| US3063858A (en) * | 1959-07-22 | 1962-11-13 | Nat Res Corp | Vapor source and processes for vaporizing iron, nickel and copper |
-
0
- BE BE634012D patent/BE634012A/xx unknown
- NL NL283435D patent/NL283435A/xx unknown
- NL NL124711D patent/NL124711C/xx active
-
1961
- 1961-10-03 US US142702A patent/US3242006A/en not_active Expired - Lifetime
-
1962
- 1962-09-08 DE DE1490927A patent/DE1490927C3/de not_active Expired
- 1962-09-25 FR FR910437A patent/FR1334290A/fr not_active Expired
- 1962-09-27 GB GB36673/62A patent/GB1015143A/en not_active Expired
- 1962-10-01 BE BE623060D patent/BE623060A/xx unknown
- 1962-10-03 SE SE10622/62A patent/SE308151B/xx unknown
Also Published As
| Publication number | Publication date |
|---|---|
| DE1490927A1 (de) | 1969-11-13 |
| NL283435A (enExample) | |
| US3242006A (en) | 1966-03-22 |
| NL124711C (enExample) | |
| FR1334290A (fr) | 1963-08-02 |
| BE623060A (enExample) | 1962-10-31 |
| SE308151B (enExample) | 1969-02-03 |
| BE634012A (enExample) | |
| GB1015143A (en) | 1965-12-31 |
| DE1490927B2 (de) | 1973-04-12 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| SH | Request for examination between 03.10.1968 and 22.04.1971 | ||
| C3 | Grant after two publication steps (3rd publication) | ||
| E77 | Valid patent as to the heymanns-index 1977 |