BE791139A - Procede pour le depot de beta-tantale dope par l'azote - Google Patents

Procede pour le depot de beta-tantale dope par l'azote

Info

Publication number
BE791139A
BE791139A BE791139DA BE791139A BE 791139 A BE791139 A BE 791139A BE 791139D A BE791139D A BE 791139DA BE 791139 A BE791139 A BE 791139A
Authority
BE
Belgium
Prior art keywords
beta
deposit
nitrogen
tantalum doped
tantalum
Prior art date
Application number
Other languages
English (en)
Inventor
H Y Kumagai
Original Assignee
Western Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Publication date
Publication of BE791139A publication Critical patent/BE791139A/fr

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/0021—Reactive sputtering or evaporation
    • C23C14/0036—Reactive sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/002—Details
    • H01G4/018—Dielectrics
    • H01G4/06—Solid dielectrics
    • H01G4/08—Inorganic dielectrics
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/01—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate comprising only passive thin-film or thick-film elements formed on a common insulating substrate
    • H01L27/016—Thin-film circuits

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Metallurgy (AREA)
  • Computer Hardware Design (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Inorganic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
  • Physical Vapour Deposition (AREA)
  • Non-Adjustable Resistors (AREA)
  • Chemical Vapour Deposition (AREA)
  • Semiconductor Integrated Circuits (AREA)
BE791139D 1972-01-14 Procede pour le depot de beta-tantale dope par l'azote BE791139A (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US21787672A 1972-01-14 1972-01-14

Publications (1)

Publication Number Publication Date
BE791139A true BE791139A (fr) 1973-03-01

Family

ID=22812849

Family Applications (1)

Application Number Title Priority Date Filing Date
BE791139D BE791139A (fr) 1972-01-14 Procede pour le depot de beta-tantale dope par l'azote

Country Status (19)

Country Link
US (1) US3723838A (fr)
JP (1) JPS5138055B2 (fr)
AT (1) ATA27073A (fr)
AU (1) AU465941B2 (fr)
BE (1) BE791139A (fr)
CA (1) CA978451A (fr)
CH (1) CH558075A (fr)
DE (1) DE2300813C3 (fr)
ES (1) ES410894A1 (fr)
FR (1) FR2168065B1 (fr)
GB (1) GB1412998A (fr)
HK (1) HK45477A (fr)
HU (1) HU166797B (fr)
IL (1) IL41293A (fr)
IT (1) IT976349B (fr)
NL (1) NL7300237A (fr)
PL (1) PL79063B1 (fr)
SE (1) SE375556B (fr)
ZA (1) ZA73257B (fr)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2218633B1 (fr) * 1973-02-19 1977-07-22 Lignes Telegraph Telephon
US3825802A (en) * 1973-03-12 1974-07-23 Western Electric Co Solid capacitor
DE2513859C2 (de) * 1975-03-27 1981-11-12 Siemens AG, 1000 Berlin und 8000 München Verfahren zum Herstellen eines Kondensator-Widerstands-Netzwerks
DE2513858C3 (de) * 1975-03-27 1981-08-06 Siemens AG, 1000 Berlin und 8000 München Verfahren zur Herstellung eines Tantal-Dünnschichtkondensators
US4009007A (en) * 1975-07-14 1977-02-22 Fansteel Inc. Tantalum powder and method of making the same
USRE32260E (en) * 1975-07-14 1986-10-07 Fansteel Inc. Tantalum powder and method of making the same
US4036708A (en) * 1976-05-13 1977-07-19 Bell Telephone Laboratories, Incorporated Technique for nucleating b.c.c. tantalum films on insulating substrates
DE3140248C2 (de) * 1981-10-09 1986-06-19 Hermann C. Starck Berlin, 1000 Berlin Verwendung von dotiertem Ventilmetallpulver für die Herstellung von Elektrolytkondensatoranoden
US4408254A (en) * 1981-11-18 1983-10-04 International Business Machines Corporation Thin film capacitors
US4471405A (en) * 1981-12-28 1984-09-11 International Business Machines Corporation Thin film capacitor with a dual bottom electrode structure
US4423087A (en) * 1981-12-28 1983-12-27 International Business Machines Corporation Thin film capacitor with a dual bottom electrode structure
JPS59175763A (ja) * 1983-03-25 1984-10-04 Fujitsu Ltd 半導体装置
GB2138027B (en) * 1983-04-12 1986-09-10 Citizen Watch Co Ltd A process for plating an article with a gold-based alloy and an alloy therefor
US5019461A (en) * 1986-12-08 1991-05-28 Honeywell Inc. Resistive overlayer for thin film devices
US6395148B1 (en) * 1998-11-06 2002-05-28 Lexmark International, Inc. Method for producing desired tantalum phase
CN100491022C (zh) * 2000-03-01 2009-05-27 卡伯特公司 氮化的电子管金属及其制造方法
US20030209423A1 (en) * 2001-03-27 2003-11-13 Christie David J. System for driving multiple magnetrons with multiple phase ac
JP4868601B2 (ja) * 2007-12-05 2012-02-01 Ｎｅｃトーキン株式会社 固体電解コンデンサ及びその製造方法
JP2009164412A (ja) * 2008-01-08 2009-07-23 Kobe Steel Ltd 多孔質金属薄膜およびその製造方法、ならびにコンデンサ
CN100528418C (zh) * 2008-01-11 2009-08-19 宁夏东方钽业股份有限公司 含氮均匀的阀金属粉末及其制造方法,阀金属坯块和阀金属烧结体以及电解电容器的阳极

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3275915A (en) * 1966-09-27 Beta tantalum thin-film capacitors
BE634012A (fr) * 1961-10-03
US3382053A (en) * 1965-04-05 1968-05-07 Western Electric Co Tantalum films of unique structure
IL26086A (en) * 1965-08-17 1970-07-19 Western Electric Co Thin-film capacitors using beta tantalum oxide and method for their production
US3521765A (en) * 1967-10-31 1970-07-28 Western Electric Co Closed-end machine for processing articles in a controlled atmosphere

Also Published As

Publication number Publication date
ATA27073A (de) 1976-07-15
US3723838A (en) 1973-03-27
HU166797B (fr) 1975-05-28
IL41293A (en) 1975-10-15
FR2168065A1 (fr) 1973-08-24
ZA73257B (en) 1973-10-31
AU5095773A (en) 1974-07-11
DE2300813A1 (de) 1973-07-26
CA978451A (en) 1975-11-25
PL79063B1 (fr) 1975-06-30
IL41293A0 (en) 1973-03-30
IT976349B (it) 1974-08-20
HK45477A (en) 1977-09-16
NL7300237A (fr) 1973-07-17
JPS4881053A (fr) 1973-10-30
DE2300813C3 (de) 1983-06-09
SE375556B (fr) 1975-04-21
DE2300813B2 (de) 1977-01-20
JPS5138055B2 (fr) 1976-10-19
FR2168065B1 (fr) 1979-06-29
AU465941B2 (en) 1975-10-09
CH558075A (de) 1975-01-15
ES410894A1 (es) 1975-12-01
GB1412998A (en) 1975-11-05

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