DE1292640B - Vorrichtung zum Abscheiden von hochreinem Silicium aus einem hochreinen, eine Siliciumverbindung enthaltenden Reaktionsgas - Google Patents

Vorrichtung zum Abscheiden von hochreinem Silicium aus einem hochreinen, eine Siliciumverbindung enthaltenden Reaktionsgas

Info

Publication number
DE1292640B
DE1292640B DES65059A DES0065059A DE1292640B DE 1292640 B DE1292640 B DE 1292640B DE S65059 A DES65059 A DE S65059A DE S0065059 A DES0065059 A DE S0065059A DE 1292640 B DE1292640 B DE 1292640B
Authority
DE
Germany
Prior art keywords
reaction
carrier
quartz
silicon
purity
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
DES65059A
Other languages
German (de)
English (en)
Inventor
Grabmeier
Dipl-Phys Dr Josef
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens Corp
Original Assignee
Siemens Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to FR78434D priority Critical patent/FR78434E/fr
Priority to NL256017D priority patent/NL256017A/xx
Application filed by Siemens Corp filed Critical Siemens Corp
Priority to DES65059A priority patent/DE1292640B/de
Priority to US51630A priority patent/US3222217A/en
Priority to CH1016560A priority patent/CH441239A/de
Priority to GB32747/60A priority patent/GB908373A/en
Publication of DE1292640B publication Critical patent/DE1292640B/de
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02658—Pretreatments
    • H01L21/02661—In-situ cleaning
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C01B33/021—Preparation
    • C01B33/027—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
    • C01B33/035—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by decomposition or reduction of gaseous or vaporised silicon compounds in the presence of heated filaments of silicon, carbon or a refractory metal, e.g. tantalum or tungsten, or in the presence of heated silicon rods on which the formed silicon is deposited, a silicon rod being obtained, e.g. Siemens process
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C8/00—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/08—Reaction chambers; Selection of materials therefor
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B35/00—Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B9/00—Single-crystal growth from melt solutions using molten solvents
    • C30B9/14—Single-crystal growth from melt solutions using molten solvents by electrolysis
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05D—SYSTEMS FOR CONTROLLING OR REGULATING NON-ELECTRIC VARIABLES
    • G05D23/00—Control of temperature
    • G05D23/19—Control of temperature characterised by the use of electric means
    • G05D23/1906—Control of temperature characterised by the use of electric means using an analogue comparing device
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05D—SYSTEMS FOR CONTROLLING OR REGULATING NON-ELECTRIC VARIABLES
    • G05D23/00—Control of temperature
    • G05D23/19—Control of temperature characterised by the use of electric means
    • G05D23/27—Control of temperature characterised by the use of electric means with sensing element responsive to radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/185—Joining of semiconductor bodies for junction formation

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Automation & Control Theory (AREA)
  • Inorganic Chemistry (AREA)
  • Electrochemistry (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Vapour Deposition (AREA)
DES65059A 1954-05-18 1959-09-23 Vorrichtung zum Abscheiden von hochreinem Silicium aus einem hochreinen, eine Siliciumverbindung enthaltenden Reaktionsgas Pending DE1292640B (de)

Priority Applications (6)

Application Number Priority Date Filing Date Title
FR78434D FR78434E (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1954-05-18
NL256017D NL256017A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1959-09-23
DES65059A DE1292640B (de) 1959-09-23 1959-09-23 Vorrichtung zum Abscheiden von hochreinem Silicium aus einem hochreinen, eine Siliciumverbindung enthaltenden Reaktionsgas
US51630A US3222217A (en) 1959-09-23 1960-08-24 Method for producing highly pure rodshaped semiconductor crystals and apparatus
CH1016560A CH441239A (de) 1959-09-23 1960-09-08 Verfahren zum Herstellen von stabförmigen Halbleiterkristallen mit sehr hoher Reinheit
GB32747/60A GB908373A (en) 1954-05-18 1960-09-23 Improvements in or relating to processes and apparatus for producing semi-conductor substances of very high purity

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DES65059A DE1292640B (de) 1959-09-23 1959-09-23 Vorrichtung zum Abscheiden von hochreinem Silicium aus einem hochreinen, eine Siliciumverbindung enthaltenden Reaktionsgas

Publications (1)

Publication Number Publication Date
DE1292640B true DE1292640B (de) 1969-04-17

Family

ID=7497717

Family Applications (1)

Application Number Title Priority Date Filing Date
DES65059A Pending DE1292640B (de) 1954-05-18 1959-09-23 Vorrichtung zum Abscheiden von hochreinem Silicium aus einem hochreinen, eine Siliciumverbindung enthaltenden Reaktionsgas

Country Status (4)

Country Link
US (1) US3222217A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
CH (1) CH441239A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
DE (1) DE1292640B (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
NL (1) NL256017A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2808461A1 (de) * 1977-03-03 1978-09-07 Komatsu Mfg Co Ltd Verfahren zur herstellung von hochreinen siliziumstaeben mit gleichmaessiger querschnittsgestalt
US4176166A (en) * 1977-05-25 1979-11-27 John S. Pennish Process for producing liquid silicon
DE102011077455A1 (de) 2011-06-14 2011-11-17 Wacker Chemie Ag Verfahren zur Bestimmung von Verunreinigungen in Silicium

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1444526B2 (de) * 1962-08-24 1971-02-04 Siemens AG, 1000 Berlin u 8000 München Verfahren zum Abscheiden eines halb leitenden Elements
US3381114A (en) * 1963-12-28 1968-04-30 Nippon Electric Co Device for manufacturing epitaxial crystals
US3635683A (en) * 1968-06-05 1972-01-18 Texas Instruments Inc Method of crystal growth by vapor deposition
US3926715A (en) * 1968-08-14 1975-12-16 Siemens Ag Method of epitactic precipitation of inorganic material
DE2541215C3 (de) * 1975-09-16 1978-08-03 Wacker-Chemitronic Gesellschaft Fuer Elektronik-Grundstoffe Mbh, 8263 Burghausen Verfahren zur Herstellung von Siliciumhohlkörpern
US4232063A (en) * 1978-11-14 1980-11-04 Applied Materials, Inc. Chemical vapor deposition reactor and process
US5143749A (en) * 1989-10-10 1992-09-01 Ucar Carbon Technology Corporation Method for treating a graphite or carbon body to form a protective coating
US6623801B2 (en) * 2001-07-30 2003-09-23 Komatsu Ltd. Method of producing high-purity polycrystalline silicon
WO2008026931A1 (en) * 2006-08-30 2008-03-06 Norsk Hydro Asa Method and equipment for manufacturing multi-crystalline solar grade silicon from metallurgical silicon
CN103149326B (zh) * 2008-09-30 2015-09-09 赫姆洛克半导体公司 测定污染材料贡献给高纯硅的杂质的量的方法
DE102013204730A1 (de) * 2013-03-18 2014-09-18 Wacker Chemie Ag Verfahren zur Abscheidung von polykristallinem Silicium

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1025845B (de) * 1955-07-29 1958-03-13 Wacker Chemie Gmbh Verfahren zur Herstellung von reinstem Silicium
US2880117A (en) * 1956-01-20 1959-03-31 Electronique & Automatisme Sa Method of manufacturing semiconducting materials
AT202980B (de) * 1953-09-25 1959-04-25 Int Standard Electric Corp Verfahren zur Herstellung von Silizium großer Reinheit

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL130620C (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * 1954-05-18 1900-01-01
DE1017795B (de) * 1954-05-25 1957-10-17 Siemens Ag Verfahren zur Herstellung reinster kristalliner Substanzen, vorzugsweise Halbleitersubstanzen
BE548227A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * 1955-07-22
US2904404A (en) * 1957-01-09 1959-09-15 Raytheon Co Preparation of silicon
US3021198A (en) * 1958-07-24 1962-02-13 Siemens And Halske Ag Berling Method for producing semiconductor single crystals
US2967115A (en) * 1958-07-25 1961-01-03 Gen Electric Method of depositing silicon on a silica coated substrate
US3017251A (en) * 1958-08-19 1962-01-16 Du Pont Process for the production of silicon

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
AT202980B (de) * 1953-09-25 1959-04-25 Int Standard Electric Corp Verfahren zur Herstellung von Silizium großer Reinheit
DE1025845B (de) * 1955-07-29 1958-03-13 Wacker Chemie Gmbh Verfahren zur Herstellung von reinstem Silicium
US2880117A (en) * 1956-01-20 1959-03-31 Electronique & Automatisme Sa Method of manufacturing semiconducting materials

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2808461A1 (de) * 1977-03-03 1978-09-07 Komatsu Mfg Co Ltd Verfahren zur herstellung von hochreinen siliziumstaeben mit gleichmaessiger querschnittsgestalt
DK153223B (da) * 1977-03-03 1988-06-27 Komatsu Mfg Co Ltd Fremgangsmaade og apparat til fremstilling af siliciumstave med ensartet tvaersnit
US4176166A (en) * 1977-05-25 1979-11-27 John S. Pennish Process for producing liquid silicon
DE102011077455A1 (de) 2011-06-14 2011-11-17 Wacker Chemie Ag Verfahren zur Bestimmung von Verunreinigungen in Silicium

Also Published As

Publication number Publication date
US3222217A (en) 1965-12-07
NL256017A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1900-01-01
CH441239A (de) 1967-08-15

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