DE1283965B - Hermetisch eingeschlossene Halbleiteranordnung - Google Patents

Hermetisch eingeschlossene Halbleiteranordnung

Info

Publication number
DE1283965B
DE1283965B DEI20337A DEI0020337A DE1283965B DE 1283965 B DE1283965 B DE 1283965B DE I20337 A DEI20337 A DE I20337A DE I0020337 A DEI0020337 A DE I0020337A DE 1283965 B DE1283965 B DE 1283965B
Authority
DE
Germany
Prior art keywords
base
semiconductor body
semiconductor
flat
conductors
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
DEI20337A
Other languages
German (de)
English (en)
Inventor
Kilby Jack St Clair
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Texas Instruments Inc
Original Assignee
Texas Instruments Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Texas Instruments Inc filed Critical Texas Instruments Inc
Publication of DE1283965B publication Critical patent/DE1283965B/de
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/26—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback
    • H03K3/28—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback using means other than a transformer for feedback
    • H03K3/281—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback using means other than a transformer for feedback using at least two transistors so coupled that the input of one is derived from the output of another, e.g. multivibrator
    • H03K3/286—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback using means other than a transformer for feedback using at least two transistors so coupled that the input of one is derived from the output of another, e.g. multivibrator bistable
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/611—Combinations of BJTs and one or more of diodes, resistors or capacitors
    • H10D84/613—Combinations of vertical BJTs and one or more of diodes, resistors or capacitors
    • H10W70/415—
    • H10W70/658—
    • H10W76/157—
    • H10W72/07353—
    • H10W72/07554—
    • H10W72/334—
    • H10W72/536—
    • H10W72/5453—
    • H10W72/5473—
    • H10W72/884—
    • H10W72/931—
    • H10W90/734—
    • H10W90/754—
    • H10W90/756—
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y10T29/49117—Conductor or circuit manufacturing
    • Y10T29/49121—Beam lead frame or beam lead device
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y10T29/49117—Conductor or circuit manufacturing
    • Y10T29/49124—On flat or curved insulated base, e.g., printed circuit, etc.
    • Y10T29/49155—Manufacturing circuit on or in base

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Wire Bonding (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Manufacture Of Switches (AREA)
DEI20337A 1959-05-06 1960-05-06 Hermetisch eingeschlossene Halbleiteranordnung Pending DE1283965B (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US811470A US3072832A (en) 1959-05-06 1959-05-06 Semiconductor structure fabrication
US46742865A 1965-06-28 1965-06-28
US60972067A 1967-01-13 1967-01-13

Publications (1)

Publication Number Publication Date
DE1283965B true DE1283965B (de) 1968-11-28

Family

ID=27413014

Family Applications (2)

Application Number Title Priority Date Filing Date
DEI20337A Pending DE1283965B (de) 1959-05-06 1960-05-06 Hermetisch eingeschlossene Halbleiteranordnung
DET18339A Pending DE1186951B (de) 1959-05-06 1960-05-06 Verfahren zum Herstellen einer hermetisch eingeschlossenen Halbleiteranordnung

Family Applications After (1)

Application Number Title Priority Date Filing Date
DET18339A Pending DE1186951B (de) 1959-05-06 1960-05-06 Verfahren zum Herstellen einer hermetisch eingeschlossenen Halbleiteranordnung

Country Status (7)

Country Link
US (1) US3072832A (enExample)
CH (1) CH410195A (enExample)
DE (2) DE1283965B (enExample)
GB (1) GB958241A (enExample)
LU (1) LU38605A1 (enExample)
MY (1) MY6900309A (enExample)
NL (1) NL251301A (enExample)

Families Citing this family (40)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB985864A (en) * 1960-08-05 1965-03-10 Telefunken Patent A semiconductor device
BE624958A (enExample) * 1961-11-20
US3173028A (en) * 1962-02-13 1965-03-09 Westinghouse Electric Corp Solid state bistable multivibrator
BE631066A (enExample) * 1962-04-16
NL292051A (enExample) * 1962-04-27
US3303265A (en) * 1962-05-17 1967-02-07 Texas Instruments Inc Miniature semiconductor enclosure
US3271625A (en) * 1962-08-01 1966-09-06 Signetics Corp Electronic package assembly
NL298196A (enExample) * 1962-09-22
US3274456A (en) * 1962-11-21 1966-09-20 Gen Instrument Corp Rectifier assembly and method of making same
US3325586A (en) * 1963-03-05 1967-06-13 Fairchild Camera Instr Co Circuit element totally encapsulated in glass
US3311798A (en) * 1963-09-27 1967-03-28 Trw Semiconductors Inc Component package
US3185865A (en) * 1963-03-26 1965-05-25 Bert W Larey Transistoried multivibrator with built-in time delay
US3231797A (en) * 1963-09-20 1966-01-25 Nat Semiconductor Corp Semiconductor device
US3383454A (en) * 1964-01-10 1968-05-14 Gti Corp Micromodular package
US3341649A (en) * 1964-01-17 1967-09-12 Signetics Corp Modular package for semiconductor devices
US3324530A (en) * 1964-07-24 1967-06-13 Ralph L Sherwood Connector support assembly for transistor connector and method of making the support assembly
US3312771A (en) * 1964-08-07 1967-04-04 Nat Beryllia Corp Microelectronic package
DE1514273B2 (de) * 1964-08-21 1974-08-22 Nippon Electric Co., Ltd., Tokio Halbleiteranordmng
US3340347A (en) * 1964-10-12 1967-09-05 Corning Glass Works Enclosed electronic device
US3388301A (en) * 1964-12-09 1968-06-11 Signetics Corp Multichip integrated circuit assembly with interconnection structure
US3349481A (en) * 1964-12-29 1967-10-31 Alpha Microelectronics Company Integrated circuit sealing method and structure
US3340602A (en) * 1965-02-01 1967-09-12 Philco Ford Corp Process for sealing
US3265806A (en) * 1965-04-05 1966-08-09 Sprague Electric Co Encapsulated flat package for electronic parts
US3374533A (en) * 1965-05-26 1968-03-26 Sprague Electric Co Semiconductor mounting and assembly method
US3522490A (en) * 1965-06-28 1970-08-04 Texas Instruments Inc Semiconductor package with heat conducting mounting extending from package on side opposite conductor extensions
US3386015A (en) * 1965-10-21 1968-05-28 Texas Instruments Inc Semiconductor element having an organic silicone base cement
US3271507A (en) * 1965-11-02 1966-09-06 Alloys Unltd Inc Flat package for semiconductors
US3404215A (en) * 1966-04-14 1968-10-01 Sprague Electric Co Hermetically sealed electronic module
US3388302A (en) * 1966-12-30 1968-06-11 Coors Porcelain Co Ceramic housing for semiconductor components
US3497774A (en) * 1967-06-07 1970-02-24 Beckman Instruments Inc Electrical circuit module and method of manufacture
US3502786A (en) * 1967-06-14 1970-03-24 Milton Stoll Flat pack spacer of low thermal diffusivity
US3538597A (en) * 1967-07-13 1970-11-10 Us Navy Flatpack lid and method
US3495023A (en) * 1968-06-14 1970-02-10 Nat Beryllia Corp Flat pack having a beryllia base and an alumina ring
US3792525A (en) * 1971-08-04 1974-02-19 Gen Motors Corp Method of making a semiconductive signal translating device
US3919602A (en) * 1972-03-23 1975-11-11 Bosch Gmbh Robert Electric circuit arrangement and method of making the same
JPS545264B1 (enExample) * 1975-05-19 1979-03-15
US4402134A (en) * 1977-11-14 1983-09-06 Edison International, Inc. Method of making an integrated display device
US4291815B1 (en) * 1980-02-19 1998-09-29 Semiconductor Packaging Materi Ceramic lid assembly for hermetic sealing of a semiconductor chip
US5134462A (en) * 1990-08-27 1992-07-28 Motorola, Inc. Flexible film chip carrier having a flexible film substrate and means for maintaining planarity of the substrate
US20070026691A1 (en) * 2005-07-07 2007-02-01 Mks Instruments Inc. Low-field non-contact charging apparatus for testing substrates

Citations (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB786299A (enExample) * 1900-01-01
CH162656A (de) * 1930-10-17 1933-06-30 Ig Farbenindustrie Ag Verfahren zur Herstellung des Natriumsalzes einer Wismutkomplexverbindung von Brenzcatechinarsinsäure.
US2446254A (en) * 1942-12-07 1948-08-03 Hartford Nat Bank & Trust Co Blocking-layer cell
US2642633A (en) * 1946-03-04 1953-06-23 Corning Glass Works Soft glass and composite article
GB705280A (en) * 1950-06-28 1954-03-10 Westinghouse Freins & Signaux Improvements in semi-conductor crystal devices
FR1099888A (fr) * 1953-05-07 1955-09-12 Philips Nv Support isolant muni d'un câblage
DE950491C (de) * 1951-09-15 1956-10-11 Gen Electric Gleichrichterelement
US2773239A (en) * 1956-12-04 Electrical indicating instruments
GB780251A (en) * 1954-02-18 1957-07-31 Pye Ltd Improvements in or relating to junction transistors
US2804581A (en) * 1953-10-05 1957-08-27 Sarkes Tarzian Semiconductor device and method of manufacture thereof
US2846655A (en) * 1955-08-19 1958-08-05 Hughes Aircraft Co Impregnated ferrite
DE1036391B (de) * 1955-04-04 1958-08-14 Hughes Aircraft Co Verfahren zur Herstellung von Flaechen-Halbleiterkristalloden mit mindestens zwei verschmolzenen Halbleiterteilen von entgegengesetzten Leitfaehigkeitstyp
GB806789A (en) * 1956-01-27 1958-12-31 Gen Electric Co Ltd Improvements in or relating to cadmium sulphide
GB809970A (en) * 1955-09-12 1959-03-04 Siemens Ag Improvements in or relating to hall voltage generators
US2889952A (en) * 1956-02-01 1959-06-09 Corning Glass Works Composite article and method
US2960754A (en) * 1955-11-09 1960-11-22 Erie Resistor Corp Network assembly method
US3029366A (en) * 1959-04-22 1962-04-10 Sprague Electric Co Multiple semiconductor assembly
DE1131323B (de) * 1958-09-10 1962-06-14 Gen Electric Halbleiteranordnung, insbesondere Transistor
DE1133833B (de) * 1958-12-24 1962-07-26 Philco Corp Hermetisch dicht schliessend gekapselte Halbleiteranordnung

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA272437A (en) * 1925-10-22 1927-07-19 Edgar Lilienfeld Julius Electric current control mechanism
US2441590A (en) * 1944-03-24 1948-05-18 Bell Telephone Labor Inc Translating device
NL84061C (enExample) * 1948-06-26
US2762954A (en) * 1950-09-09 1956-09-11 Sylvania Electric Prod Method for assembling transistors
GB691708A (en) * 1951-04-03 1953-05-20 British Thomson Houston Co Ltd Improvements in and relating to crystal valves or rectifiers
US2743430A (en) * 1952-03-01 1956-04-24 Rca Corp Information storage devices
BE520380A (enExample) * 1952-06-02
US2641717A (en) * 1952-08-28 1953-06-09 Us Navy Transistor one-shot multivibrator
US2827574A (en) * 1953-08-24 1958-03-18 Hoffman Electronics Corp Multivibrators
NL91651C (enExample) * 1953-12-09
US2788300A (en) * 1954-03-10 1957-04-09 Sylvania Electric Prod Processing of alloy junction devices
US2883592A (en) * 1955-12-30 1959-04-21 Gen Electric Encapsulated selenium rectifiers
US2905873A (en) * 1956-09-17 1959-09-22 Rca Corp Semiconductor power devices and method of manufacture
US2910634A (en) * 1957-05-31 1959-10-27 Ibm Semiconductor device

Patent Citations (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2773239A (en) * 1956-12-04 Electrical indicating instruments
GB786299A (enExample) * 1900-01-01
CH162656A (de) * 1930-10-17 1933-06-30 Ig Farbenindustrie Ag Verfahren zur Herstellung des Natriumsalzes einer Wismutkomplexverbindung von Brenzcatechinarsinsäure.
US2446254A (en) * 1942-12-07 1948-08-03 Hartford Nat Bank & Trust Co Blocking-layer cell
US2642633A (en) * 1946-03-04 1953-06-23 Corning Glass Works Soft glass and composite article
GB705280A (en) * 1950-06-28 1954-03-10 Westinghouse Freins & Signaux Improvements in semi-conductor crystal devices
DE950491C (de) * 1951-09-15 1956-10-11 Gen Electric Gleichrichterelement
FR1099888A (fr) * 1953-05-07 1955-09-12 Philips Nv Support isolant muni d'un câblage
US2804581A (en) * 1953-10-05 1957-08-27 Sarkes Tarzian Semiconductor device and method of manufacture thereof
US2875385A (en) * 1954-02-18 1959-02-24 Pye Ltd Transistors
GB780251A (en) * 1954-02-18 1957-07-31 Pye Ltd Improvements in or relating to junction transistors
DE1036391B (de) * 1955-04-04 1958-08-14 Hughes Aircraft Co Verfahren zur Herstellung von Flaechen-Halbleiterkristalloden mit mindestens zwei verschmolzenen Halbleiterteilen von entgegengesetzten Leitfaehigkeitstyp
US2846655A (en) * 1955-08-19 1958-08-05 Hughes Aircraft Co Impregnated ferrite
GB809970A (en) * 1955-09-12 1959-03-04 Siemens Ag Improvements in or relating to hall voltage generators
US2960754A (en) * 1955-11-09 1960-11-22 Erie Resistor Corp Network assembly method
GB806789A (en) * 1956-01-27 1958-12-31 Gen Electric Co Ltd Improvements in or relating to cadmium sulphide
US2889952A (en) * 1956-02-01 1959-06-09 Corning Glass Works Composite article and method
DE1131323B (de) * 1958-09-10 1962-06-14 Gen Electric Halbleiteranordnung, insbesondere Transistor
DE1133833B (de) * 1958-12-24 1962-07-26 Philco Corp Hermetisch dicht schliessend gekapselte Halbleiteranordnung
US3029366A (en) * 1959-04-22 1962-04-10 Sprague Electric Co Multiple semiconductor assembly

Also Published As

Publication number Publication date
US3072832A (en) 1963-01-08
GB958241A (en) 1964-05-21
NL251301A (enExample) 1900-01-01
LU38605A1 (enExample)
MY6900309A (en) 1969-12-31
DE1186951B (de) 1965-02-11
CH410195A (fr) 1966-03-31

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