GB809970A - Improvements in or relating to hall voltage generators - Google Patents

Abstract

809,970. Semi-conductor devices. SIEMENSSCHUCKERWERKE A.G. Sept. 6, 1956 [Sept. 12, 1955; March 26, 1956], No. 27333/56. Addition to 784,885. Class 37. In a Hall generator according to the parent Specification, the lead from one Hall electrode 6 includes a portion 10 of the same material, e.g. indium arsenide as the Hall element 10. This portion 10 extends as far as the other Hall electrode 7 and compensates for any thermoelectric effect which might arise due to a temperature difference between Hall electrodes 6 and 7. Electrodes 2 and 3 supply the primary current to the Hall element. In a modification (Fig. 2), the element 10 is adapted to operate as a second Hall generator with primary supply terminals 102 and 103 and Hall electrodes 106 and 107. The elements may be connected with the two thermo-electric voltages in opposition and the two Hall voltages in series aiding or series opposition. A thin layer or ceramic or ferritic insulating material may separate the two Hall elements 1 and 10. In a further modification, two additional elements of the same material as the Hall elements are also connected immediately adjacent the generators to provide further compensation for thermo-electric effects if this should be necessary.