DE112020007503T5 - Siliciumcarbid-halbleitereinheit und leistungswandler - Google Patents

Siliciumcarbid-halbleitereinheit und leistungswandler Download PDF

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Publication number
DE112020007503T5
DE112020007503T5 DE112020007503.6T DE112020007503T DE112020007503T5 DE 112020007503 T5 DE112020007503 T5 DE 112020007503T5 DE 112020007503 T DE112020007503 T DE 112020007503T DE 112020007503 T5 DE112020007503 T5 DE 112020007503T5
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DE
Germany
Prior art keywords
region
silicon carbide
layer
area
regions
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
DE112020007503.6T
Other languages
German (de)
English (en)
Inventor
Yuichi Nagahisa
Takanori Tanaka
Hiroyuki Amishiro
Naoyuki Kawabata
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Publication of DE112020007503T5 publication Critical patent/DE112020007503T5/de
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H10D30/665—Vertical DMOS [VDMOS] FETs having edge termination structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/01—Manufacture or treatment
    • H10D12/031—Manufacture or treatment of IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/028—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs
    • H10D30/0291—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs of vertical DMOS [VDMOS] FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] 
    • H10D62/106—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE]  having supplementary regions doped oppositely to or in rectifying contact with regions of the semiconductor bodies, e.g. guard rings with PN or Schottky junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/124—Shapes, relative sizes or dispositions of the regions of semiconductor bodies or of junctions between the regions
    • H10D62/126—Top-view geometrical layouts of the regions or the junctions
    • H10D62/127—Top-view geometrical layouts of the regions or the junctions of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/832—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge being Group IV materials comprising two or more elements, e.g. SiGe
    • H10D62/8325—Silicon carbide

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  • Electrodes Of Semiconductors (AREA)
DE112020007503.6T 2020-08-11 2020-08-11 Siliciumcarbid-halbleitereinheit und leistungswandler Pending DE112020007503T5 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2020/030578 WO2022034636A1 (ja) 2020-08-11 2020-08-11 炭化珪素半導体装置および電力変換装置

Publications (1)

Publication Number Publication Date
DE112020007503T5 true DE112020007503T5 (de) 2023-06-07

Family

ID=80247785

Family Applications (1)

Application Number Title Priority Date Filing Date
DE112020007503.6T Pending DE112020007503T5 (de) 2020-08-11 2020-08-11 Siliciumcarbid-halbleitereinheit und leistungswandler

Country Status (5)

Country Link
US (1) US12520550B2 (https=)
JP (1) JP7332812B2 (https=)
CN (1) CN116137935B (https=)
DE (1) DE112020007503T5 (https=)
WO (1) WO2022034636A1 (https=)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2015189929A1 (ja) 2014-06-11 2015-12-17 株式会社日立製作所 半導体装置、パワーモジュール、電力変換装置および半導体装置の製造方法
WO2018155553A1 (ja) 2017-02-24 2018-08-30 三菱電機株式会社 炭化珪素半導体装置および電力変換装置

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011100877A (ja) * 2009-11-06 2011-05-19 Toshiba Corp 半導体装置及びその製造方法
JP5719167B2 (ja) * 2010-12-28 2015-05-13 ルネサスエレクトロニクス株式会社 半導体装置
JP6157338B2 (ja) * 2013-12-11 2017-07-05 三菱電機株式会社 半導体装置
JP5985105B2 (ja) * 2014-05-01 2016-09-06 三菱電機株式会社 半導体装置
DE112017001788B4 (de) * 2016-03-30 2024-05-08 Mitsubishi Electric Corporation Halbleitereinheit, Verfahren zur Herstellung derselben und Leistungswandler
JP6844163B2 (ja) * 2016-09-14 2021-03-17 富士電機株式会社 炭化珪素半導体装置
US11063122B2 (en) * 2016-11-01 2021-07-13 Mitsubishi Electric Corporation Silicon carbide semiconductor device and power conversion device
CN206490069U (zh) * 2017-01-24 2017-09-12 深圳基本半导体有限公司 一种宽禁带半导体器件
DE112018006456B4 (de) * 2017-12-19 2024-09-05 Mitsubishi Electric Corporation Siliciumcarbid-Halbleitereinheit und Leistungswandler

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2015189929A1 (ja) 2014-06-11 2015-12-17 株式会社日立製作所 半導体装置、パワーモジュール、電力変換装置および半導体装置の製造方法
WO2018155553A1 (ja) 2017-02-24 2018-08-30 三菱電機株式会社 炭化珪素半導体装置および電力変換装置

Also Published As

Publication number Publication date
US12520550B2 (en) 2026-01-06
WO2022034636A1 (ja) 2022-02-17
JPWO2022034636A1 (https=) 2022-02-17
CN116137935B (zh) 2024-11-01
JP7332812B2 (ja) 2023-08-23
CN116137935A (zh) 2023-05-19
US20230215921A1 (en) 2023-07-06

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R012 Request for examination validly filed
R409 Internal rectification of the legal status completed
R084 Declaration of willingness to licence
R079 Amendment of ipc main class

Free format text: PREVIOUS MAIN CLASS: H01L0029780000

Ipc: H10D0030600000