JP7332812B2 - 炭化珪素半導体装置および電力変換装置 - Google Patents

炭化珪素半導体装置および電力変換装置 Download PDF

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Publication number
JP7332812B2
JP7332812B2 JP2022542523A JP2022542523A JP7332812B2 JP 7332812 B2 JP7332812 B2 JP 7332812B2 JP 2022542523 A JP2022542523 A JP 2022542523A JP 2022542523 A JP2022542523 A JP 2022542523A JP 7332812 B2 JP7332812 B2 JP 7332812B2
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silicon carbide
well
conductivity type
regions
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JPWO2022034636A5 (https=
JPWO2022034636A1 (https=
Inventor
雄一 永久
貴規 田中
啓之 網城
直之 川畑
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Mitsubishi Electric Corp
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Mitsubishi Electric Corp
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H10D30/665—Vertical DMOS [VDMOS] FETs having edge termination structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/01—Manufacture or treatment
    • H10D12/031—Manufacture or treatment of IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/028—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs
    • H10D30/0291—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs of vertical DMOS [VDMOS] FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] 
    • H10D62/106—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE]  having supplementary regions doped oppositely to or in rectifying contact with regions of the semiconductor bodies, e.g. guard rings with PN or Schottky junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/124—Shapes, relative sizes or dispositions of the regions of semiconductor bodies or of junctions between the regions
    • H10D62/126—Top-view geometrical layouts of the regions or the junctions
    • H10D62/127—Top-view geometrical layouts of the regions or the junctions of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/832—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge being Group IV materials comprising two or more elements, e.g. SiGe
    • H10D62/8325—Silicon carbide

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  • Electrodes Of Semiconductors (AREA)
JP2022542523A 2020-08-11 2020-08-11 炭化珪素半導体装置および電力変換装置 Active JP7332812B2 (ja)

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PCT/JP2020/030578 WO2022034636A1 (ja) 2020-08-11 2020-08-11 炭化珪素半導体装置および電力変換装置

Publications (3)

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JPWO2022034636A1 JPWO2022034636A1 (https=) 2022-02-17
JPWO2022034636A5 JPWO2022034636A5 (https=) 2022-10-26
JP7332812B2 true JP7332812B2 (ja) 2023-08-23

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US (1) US12520550B2 (https=)
JP (1) JP7332812B2 (https=)
CN (1) CN116137935B (https=)
DE (1) DE112020007503T5 (https=)
WO (1) WO2022034636A1 (https=)

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011100877A (ja) 2009-11-06 2011-05-19 Toshiba Corp 半導体装置及びその製造方法
JP2015115452A (ja) 2013-12-11 2015-06-22 三菱電機株式会社 半導体装置
WO2015166754A1 (ja) 2014-05-01 2015-11-05 三菱電機株式会社 半導体装置
WO2017169086A1 (ja) 2016-03-30 2017-10-05 三菱電機株式会社 半導体装置およびその製造方法、電力変換装置
JP2018046162A (ja) 2016-09-14 2018-03-22 富士電機株式会社 炭化珪素半導体装置

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5719167B2 (ja) * 2010-12-28 2015-05-13 ルネサスエレクトロニクス株式会社 半導体装置
WO2015189929A1 (ja) 2014-06-11 2015-12-17 株式会社日立製作所 半導体装置、パワーモジュール、電力変換装置および半導体装置の製造方法
US11063122B2 (en) * 2016-11-01 2021-07-13 Mitsubishi Electric Corporation Silicon carbide semiconductor device and power conversion device
CN206490069U (zh) * 2017-01-24 2017-09-12 深圳基本半导体有限公司 一种宽禁带半导体器件
WO2018155553A1 (ja) 2017-02-24 2018-08-30 三菱電機株式会社 炭化珪素半導体装置および電力変換装置
DE112018006456B4 (de) * 2017-12-19 2024-09-05 Mitsubishi Electric Corporation Siliciumcarbid-Halbleitereinheit und Leistungswandler

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011100877A (ja) 2009-11-06 2011-05-19 Toshiba Corp 半導体装置及びその製造方法
JP2015115452A (ja) 2013-12-11 2015-06-22 三菱電機株式会社 半導体装置
WO2015166754A1 (ja) 2014-05-01 2015-11-05 三菱電機株式会社 半導体装置
WO2017169086A1 (ja) 2016-03-30 2017-10-05 三菱電機株式会社 半導体装置およびその製造方法、電力変換装置
JP2018046162A (ja) 2016-09-14 2018-03-22 富士電機株式会社 炭化珪素半導体装置

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Publication number Publication date
US12520550B2 (en) 2026-01-06
WO2022034636A1 (ja) 2022-02-17
JPWO2022034636A1 (https=) 2022-02-17
DE112020007503T5 (de) 2023-06-07
CN116137935B (zh) 2024-11-01
CN116137935A (zh) 2023-05-19
US20230215921A1 (en) 2023-07-06

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