JPWO2022034636A5 - - Google Patents

Download PDF

Info

Publication number
JPWO2022034636A5
JPWO2022034636A5 JP2022542523A JP2022542523A JPWO2022034636A5 JP WO2022034636 A5 JPWO2022034636 A5 JP WO2022034636A5 JP 2022542523 A JP2022542523 A JP 2022542523A JP 2022542523 A JP2022542523 A JP 2022542523A JP WO2022034636 A5 JPWO2022034636 A5 JP WO2022034636A5
Authority
JP
Japan
Prior art keywords
silicon carbide
region
conductivity type
well
regions
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2022542523A
Other languages
English (en)
Japanese (ja)
Other versions
JPWO2022034636A1 (https=
JP7332812B2 (ja
Filing date
Publication date
Application filed filed Critical
Priority claimed from PCT/JP2020/030578 external-priority patent/WO2022034636A1/ja
Publication of JPWO2022034636A1 publication Critical patent/JPWO2022034636A1/ja
Publication of JPWO2022034636A5 publication Critical patent/JPWO2022034636A5/ja
Application granted granted Critical
Publication of JP7332812B2 publication Critical patent/JP7332812B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

JP2022542523A 2020-08-11 2020-08-11 炭化珪素半導体装置および電力変換装置 Active JP7332812B2 (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2020/030578 WO2022034636A1 (ja) 2020-08-11 2020-08-11 炭化珪素半導体装置および電力変換装置

Publications (3)

Publication Number Publication Date
JPWO2022034636A1 JPWO2022034636A1 (https=) 2022-02-17
JPWO2022034636A5 true JPWO2022034636A5 (https=) 2022-10-26
JP7332812B2 JP7332812B2 (ja) 2023-08-23

Family

ID=80247785

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2022542523A Active JP7332812B2 (ja) 2020-08-11 2020-08-11 炭化珪素半導体装置および電力変換装置

Country Status (5)

Country Link
US (1) US12520550B2 (https=)
JP (1) JP7332812B2 (https=)
CN (1) CN116137935B (https=)
DE (1) DE112020007503T5 (https=)
WO (1) WO2022034636A1 (https=)

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011100877A (ja) * 2009-11-06 2011-05-19 Toshiba Corp 半導体装置及びその製造方法
JP5719167B2 (ja) * 2010-12-28 2015-05-13 ルネサスエレクトロニクス株式会社 半導体装置
JP6157338B2 (ja) * 2013-12-11 2017-07-05 三菱電機株式会社 半導体装置
JP5985105B2 (ja) * 2014-05-01 2016-09-06 三菱電機株式会社 半導体装置
WO2015189929A1 (ja) 2014-06-11 2015-12-17 株式会社日立製作所 半導体装置、パワーモジュール、電力変換装置および半導体装置の製造方法
DE112017001788B4 (de) * 2016-03-30 2024-05-08 Mitsubishi Electric Corporation Halbleitereinheit, Verfahren zur Herstellung derselben und Leistungswandler
JP6844163B2 (ja) * 2016-09-14 2021-03-17 富士電機株式会社 炭化珪素半導体装置
US11063122B2 (en) * 2016-11-01 2021-07-13 Mitsubishi Electric Corporation Silicon carbide semiconductor device and power conversion device
CN206490069U (zh) * 2017-01-24 2017-09-12 深圳基本半导体有限公司 一种宽禁带半导体器件
WO2018155553A1 (ja) 2017-02-24 2018-08-30 三菱電機株式会社 炭化珪素半導体装置および電力変換装置
DE112018006456B4 (de) * 2017-12-19 2024-09-05 Mitsubishi Electric Corporation Siliciumcarbid-Halbleitereinheit und Leistungswandler

Similar Documents

Publication Publication Date Title
CN102893392B (zh) 采用孤岛拓扑结构的高密度氮化镓器件
CN101345243B (zh) 半导体器件
US5682048A (en) Groove-type semiconductor device
US10978580B2 (en) Insulated gate bipolar transistor and diode
US9236438B2 (en) Semiconductor device
CN103426910B (zh) 功率半导体元件及其边缘终端结构
JP5378045B2 (ja) 半導体装置
JP5601863B2 (ja) 電力半導体装置
JP2001217419A (ja) 半導体装置
JPWO2017208735A1 (ja) 半導体装置
CN108321187B (zh) 一种带沟槽的终端结构
JP2003078138A (ja) 半導体装置
WO2006085448A1 (ja) 半導体素子
CN104517962B (zh) 半导体装置
JPWO2022034636A5 (https=)
JP3855386B2 (ja) 半導体装置
JPWO2023286235A5 (https=)
JP2008141055A (ja) 半導体装置
CN119730352B (zh) 一种半导体器件
JPH07202202A (ja) 電力用ｍｏｓデバイスチップ及びパッケージアッセンブリ
CN116490978B (zh) 双向晶闸管装置
JP4078895B2 (ja) 半導体装置
CN116504615A (zh) 一种新型栅极总线结构的形成方法
JPH04103649U (ja) 半導体装置
JPWO2024028995A5 (https=)