DE112015002272B4 - Sic leistungsmodule mit hohem strom und niedrigen schaltverlusten - Google Patents

Sic leistungsmodule mit hohem strom und niedrigen schaltverlusten Download PDF

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Publication number
DE112015002272B4
DE112015002272B4 DE112015002272.4T DE112015002272T DE112015002272B4 DE 112015002272 B4 DE112015002272 B4 DE 112015002272B4 DE 112015002272 T DE112015002272 T DE 112015002272T DE 112015002272 B4 DE112015002272 B4 DE 112015002272B4
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Germany
Prior art keywords
power module
power supply
power
switching
transistor
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Active
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DE112015002272.4T
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German (de)
English (en)
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DE112015002272T5 (de
Inventor
Mrinal K. Das
Henry Lin
Marcelo Schupbach
John Williams Palmour
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Wolfspeed Inc
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Wolfspeed Inc
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Priority claimed from US14/277,820 external-priority patent/US9373617B2/en
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Publication of DE112015002272T5 publication Critical patent/DE112015002272T5/de
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/30—Devices controlled by electric currents or voltages
    • H10D48/32—Devices controlled by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H10D48/34—Bipolar devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/832—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge being Group IV materials comprising two or more elements, e.g. SiGe
    • H10D62/8325—Silicon carbide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/075—Connecting or disconnecting of bond wires
    • H10W72/07551—Connecting or disconnecting of bond wires characterised by changes in properties of the bond wires during the connecting
    • H10W72/07552—Connecting or disconnecting of bond wires characterised by changes in properties of the bond wires during the connecting changes in structures or sizes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/521—Structures or relative sizes of bond wires
    • H10W72/527—Multiple bond wires having different sizes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/531—Shapes of wire connectors
    • H10W72/5363—Shapes of wire connectors the connected ends being wedge-shaped
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/541—Dispositions of bond wires
    • H10W72/547—Dispositions of multiple bond wires
    • H10W72/5473—Dispositions of multiple bond wires multiple bond wires connected to a common bond pad
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/541—Dispositions of bond wires
    • H10W72/547—Dispositions of multiple bond wires
    • H10W72/5475—Dispositions of multiple bond wires multiple bond wires connected to common bond pads at both ends of the wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/921—Structures or relative sizes of bond pads
    • H10W72/926—Multiple bond pads having different sizes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/931—Shapes of bond pads
    • H10W72/932—Plan-view shape, i.e. in top view
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/753—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between laterally-adjacent chips
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/754—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked insulating package substrate, interposer or RDL

Landscapes

  • Inverter Devices (AREA)
  • Power Conversion In General (AREA)
  • Junction Field-Effect Transistors (AREA)
DE112015002272.4T 2014-05-15 2015-05-14 Sic leistungsmodule mit hohem strom und niedrigen schaltverlusten Active DE112015002272B4 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US14/277,820 2014-05-15
US14/277,820 US9373617B2 (en) 2011-09-11 2014-05-15 High current, low switching loss SiC power module
PCT/US2015/030853 WO2015175820A1 (en) 2014-05-15 2015-05-14 HIGH CURRENT, LOW SWITCHING LOSS SiC POWER MODULE

Publications (2)

Publication Number Publication Date
DE112015002272T5 DE112015002272T5 (de) 2017-02-09
DE112015002272B4 true DE112015002272B4 (de) 2024-07-25

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
DE112015002272.4T Active DE112015002272B4 (de) 2014-05-15 2015-05-14 Sic leistungsmodule mit hohem strom und niedrigen schaltverlusten

Country Status (4)

Country Link
JP (2) JP7000022B2 (enExample)
CN (2) CN111900156B (enExample)
DE (1) DE112015002272B4 (enExample)
WO (1) WO2015175820A1 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US12580558B2 (en) 2021-12-16 2026-03-17 Robert Bosch Gmbh Device, half bridge and method for operating a device

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109997223B (zh) 2016-11-25 2023-06-30 日立能源瑞士股份公司 功率半导体模块
US10749443B2 (en) 2017-01-13 2020-08-18 Cree Fayetteville, Inc. High power multilayer module having low inductance and fast switching for paralleling power devices
US11696417B2 (en) 2017-01-13 2023-07-04 Wolfspeed, Inc. High power multilayer module having low inductance and fast switching for paralleling power devices
US10917992B2 (en) 2017-01-13 2021-02-09 Cree Fayetteville, Inc. High power multilayer module having low inductance and fast switching for paralleling power devices
JP7163054B2 (ja) 2017-04-20 2022-10-31 ローム株式会社 半導体装置
JP6893169B2 (ja) * 2017-12-26 2021-06-23 株式会社日立製作所 パワーモジュールおよび電力変換装置
CN108598074B (zh) * 2018-06-15 2024-02-02 华北电力大学 一种新型封装结构的功率模块
CN111245230B (zh) * 2018-11-29 2021-06-04 致茂电子(苏州)有限公司 半桥电路组件及切换式电源供应器
KR102787083B1 (ko) * 2019-01-10 2025-03-26 울프스피드 인코포레이티드 전력 장치를 병렬화하기 위한 낮은 인덕턴스와 빠른 스위칭을 갖는 고전력 다층 모듈
US11418141B2 (en) * 2019-09-18 2022-08-16 Eaton Intelligent Power Limited Hybrid drive apparatus
CN112953168A (zh) * 2021-03-03 2021-06-11 中山市科力高氢能设备有限公司 一种开关管电路结构及电路系统
CN116918066A (zh) 2021-09-09 2023-10-20 富士电机株式会社 半导体模块
JP7750810B2 (ja) * 2022-09-12 2025-10-07 株式会社東芝 半導体装置
DE102022134658A1 (de) 2022-12-22 2024-06-27 Valeo Eautomotive Germany Gmbh Leistungsmodul, elektrischer Leistungswandler und elektrischer Antrieb für ein Transportmittel
CN221614839U (zh) * 2023-12-08 2024-08-27 上海理想汽车科技有限公司 功率半导体模块及半桥功率模块
CN119050103B (zh) * 2024-08-19 2025-09-23 复旦大学 一种功率模块的多层金属绝缘基板及其制备方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE69726518T2 (de) 1996-09-06 2004-10-07 Hitachi Ltd Leistungshalbleiteranordnung in modularer Bauart
US20120256194A1 (en) 2009-05-14 2012-10-11 Rohm Co., Ltd. Semiconductor device
US20130248883A1 (en) 2011-09-11 2013-09-26 Cree, Inc. High performance power module

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JPH10290562A (ja) * 1997-04-14 1998-10-27 Toshiba Corp ゲート抵抗器及びこれに接続される圧接型ｉｇｂｔ
EP1908049A2 (en) * 2005-06-24 2008-04-09 International Rectifier Corporation Semiconductor half-bridge module with low inductance
JP4513770B2 (ja) * 2006-02-28 2010-07-28 株式会社豊田自動織機 半導体装置
JP5241344B2 (ja) * 2008-06-30 2013-07-17 日立オートモティブシステムズ株式会社 パワーモジュール及び電力変換装置
US8237260B2 (en) * 2008-11-26 2012-08-07 Infineon Technologies Ag Power semiconductor module with segmented base plate
DE102009046258B3 (de) * 2009-10-30 2011-07-07 Infineon Technologies AG, 85579 Leistungshalbleitermodul und Verfahren zum Betrieb eines Leistungshalbleitermoduls
CN103036394A (zh) * 2011-09-29 2013-04-10 台达电子企业管理（上海）有限公司 一种用于中高压变频器的散热装置
JP5879233B2 (ja) * 2012-08-31 2016-03-08 日立オートモティブシステムズ株式会社 パワー半導体モジュール
CN202917466U (zh) * 2012-12-05 2013-05-01 齐齐哈尔齐力达电子有限公司 增加功率半导体模块爬电距离的装置

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE69726518T2 (de) 1996-09-06 2004-10-07 Hitachi Ltd Leistungshalbleiteranordnung in modularer Bauart
US20120256194A1 (en) 2009-05-14 2012-10-11 Rohm Co., Ltd. Semiconductor device
US20130248883A1 (en) 2011-09-11 2013-09-26 Cree, Inc. High performance power module

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US12580558B2 (en) 2021-12-16 2026-03-17 Robert Bosch Gmbh Device, half bridge and method for operating a device

Also Published As

Publication number Publication date
JP2017516312A (ja) 2017-06-15
CN106537586A (zh) 2017-03-22
DE112015002272T5 (de) 2017-02-09
JP7000022B2 (ja) 2022-01-19
JP7056836B2 (ja) 2022-04-19
CN111900156A (zh) 2020-11-06
WO2015175820A1 (en) 2015-11-19
CN106537586B (zh) 2020-09-11
JP2020098921A (ja) 2020-06-25
CN111900156B (zh) 2025-02-14

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