JP2017516312A - 高電流、低スイッチングロスのSiCパワーモジュール - Google Patents
高電流、低スイッチングロスのSiCパワーモジュール Download PDFInfo
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- JP2017516312A JP2017516312A JP2016567562A JP2016567562A JP2017516312A JP 2017516312 A JP2017516312 A JP 2017516312A JP 2016567562 A JP2016567562 A JP 2016567562A JP 2016567562 A JP2016567562 A JP 2016567562A JP 2017516312 A JP2017516312 A JP 2017516312A
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- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims abstract description 17
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 15
- 239000000758 substrate Substances 0.000 claims description 10
- 230000005669 field effect Effects 0.000 claims description 7
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims description 6
- 239000004065 semiconductor Substances 0.000 claims description 6
- 229910044991 metal oxide Inorganic materials 0.000 claims description 5
- 150000004706 metal oxides Chemical group 0.000 claims description 5
- CSDREXVUYHZDNP-UHFFFAOYSA-N alumanylidynesilicon Chemical compound [Al].[Si] CSDREXVUYHZDNP-UHFFFAOYSA-N 0.000 claims description 4
- 239000000463 material Substances 0.000 abstract description 6
- 229910052751 metal Inorganic materials 0.000 description 11
- 239000002184 metal Substances 0.000 description 11
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 4
- 230000008901 benefit Effects 0.000 description 4
- 229910052802 copper Inorganic materials 0.000 description 4
- 239000010949 copper Substances 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 230000009471 action Effects 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 230000007613 environmental effect Effects 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 238000011084 recovery Methods 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
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Abstract
Description
本願は、2013年5月14日に提出された米国特許出願番号第13/893,998の一部継続出願であり、該一部継続出願は2012年8月17日に提出された米国特許出願番号第13/588,329の一部継続出願であり、該一部継続出願は2011年9月11日に提出された米国特許仮出願第61/533,254の利益を請求し、これらの開示の全内容は参照により本願に援用される。
[開示の分野]
本開示は、負荷への電力供給を制御するためのパワーモジュールに関する。
[背景]
電力コストは上昇を続け、環境への影響が懸念されるにつれて、向上した性能および効率を有するパワーデバイスへの需要は継続的に高まっている。パワーデバイスの性能および効率を向上させるための1つの方法は、炭化ケイ素(SiC)を用いるデバイスを作製することである。SiCで作製されたパワーデバイスは、従来のシリコンパワーデバイスと比較して、切り替え速度、電力処理能力、および温度処理能力において大きな利点を示すことが期待されている。具体的には、SiCデバイスの高臨界磁場およびワイドバンドギャップによって、従来のシリコンデバイスと比較して性能および効率の両方が向上する。
[概要]
本開示は負荷への電力供給を制御するためのパワーモジュールに関する。一実施形態によると、パワーモジュールは、内部チャンバを有するハウジングと、前記ハウジングの前記内部チャンバ内に取り付けられた複数のスイッチモジュールとを備える。前記スイッチモジュールは相互連結され、電力の負荷への切り替えを容易にするよう構成されている。前記複数のスイッチモジュールはそれぞれ、少なくとも1つのトランジスタと少なくとも1つのダイオードとを備える。共に、前記スイッチモジュールは1200ボルトを遮断し、300アンペアを通電することが可能であり、20ミリジュール未満のスイッチングロスを有する。前記パワーモジュールが1200V/300A定格で20ミリジュール未満のスイッチングロスを有するように前記パワーモジュールにスイッチングモジュールを含めることによって、パワーモジュールの性能は、従来の電力モジュールと比較して著しく向上している。
以下の実施形態は、当業者が本実施形態を実行するために必要な情報を提示しており、また、本実施形態を実行する際のベストモードを説明している。添付の図を考慮して以下の説明を読むことによって、当業者は本開示の概念を理解し、本明細書では特に示されていないこれらの概念の応用を認識するであろう。尚、これらの概念および応用は、本開示および添付の請求項の範囲内であることを理解されたい。
Claims (34)
- 内部チャンバを有するハウジングと、
前記内部チャンバ内に取り付けられ、電力の負荷への切り替えを容易にするために相互連結された複数のスイッチモジュールであって、前記複数のスイッチモジュールはそれぞれ、少なくとも1つのトランジスタと少なくとも1つのダイオードとを備え、前記パワーモジュールは1200ボルトを遮断し、300アンペアを通電することが可能であり、20ミリジュール未満のスイッチングロスを有する複数のスイッチモジュールと、を備える、パワーモジュール。 - 前記パワーモジュールは、1ミリジュールよりも大きいスイッチングロスを有する、請求項1に記載のパワーモジュール。
- 前記少なくとも1つのトランジスタ、および前記少なくとも1つのダイオードは、炭化ケイ素(SiC)デバイスである、請求項1に記載のパワーモジュール。
- 前記少なくとも1つのトランジスタは、金属酸化膜半導体電界効果トランジスタ(MOSFET)であり、前記少なくとも1つのダイオードは、ショットキーダイオードである、請求項3に記載のパワーモジュール。
- 前記少なくとも1つのトランジスタは、前記少なくとも1つのダイオードと逆並列に連結されている、請求項4に記載のパワーモジュール。
- 前記少なくとも1つのトランジスタは、効果的に並列に連結されたトランジスタ群を備え、前記少なくとも1つのダイオードは、効果的に並列に連結されたダイオード群を備える、請求項5に記載のパワーモジュール。
- 前記パワーモジュールは、少なくとも50kHzのスイッチング周波数で作動するよう構成されている、請求項1に記載のパワーモジュール。
- 前記少なくとも1つのトランジスタは、窒化アルミニウムの層の上方に形成されている、請求項1に記載のパワーモジュール。
- 前記複数のスイッチモジュールは、アルミニウム炭化ケイ素のベースプレートに取り付けられている、請求項8に記載のパワーモジュール。
- 前記複数のスイッチモジュールは、2つのスイッチモジュールを構成し、
前記スイッチモジュールは、正極電源端子と負極電源端子との間に、直列に連結され、
出力端子が前記スイッチモジュール間に連結されている、請求項4に記載のパワーモジュール。 - 内部チャンバを有するハウジングと
前記内部チャンバ内の少なくとも第1パワー基板であって、前記第1パワー基板は、電力の負荷への切り替えを容易にするための、前記第1パワー基板の第1の面に1つあるいは複数のスイッチモジュールを備え、前記1つあるいは複数のスイッチモジュールは、少なくとも1つのトランジスタおよび少なくとも1つのダイオードを備える、少なくとも第1のパワー基板と、
前記少なくとも1つのトランジスタのゲートコンタクトに、前記パワー基板の前記第1の面に第1導電トレースを備える信号経路を介して連結されたゲートコネクタとを備える、パワーモジュール。 - 前記第1パワー基板とは別個であり、かつ第2導電トレースを前記第2スイッチングモジュールの第1の面に備える第2パワー基板であって、前記第2導電トレースは前記信号経路の一部を形成する第2パワー基板を更に備える、請求項11に記載のパワーモジュール。
- 前記少なくとも1つのトランジスタの前記ゲートコンタクトは、第1のワイヤボンドを介して前記第1導電トレースに連結され、
前記ゲートコネクタは、第2のワイヤボンドを介して前記第2導電トレースに連結され、
前記第1導電トレースおよび前記第2導電トレースは、第3ワイヤボンドを介して接続されている、請求項12に記載のパワーモジュール。 - 前記少なくとも1つのトランジスタおよび前記少なくとも1つのダイオードは、炭化ケイ素(SiC)デバイスである、請求項11に記載のパワーモジュール。
- 前記少なくとも1つのトランジスタは、金属酸化膜半導体電界効果トランジスタ(MOSFET)であり、前記少なくとも1つのダイオードはショットキーダイオードである、請求項14に記載のパワーモジュール。
- 前記少なくとも1つのトランジスタは、前記少なくとも1つのダイオードと逆並列に連結されている、請求項15に記載のパワーモジュール。
- 前記少なくとも1つのトランジスタは、効果的に並列に連結されたトランジスタ群を備え、前記少なくとも1つのダイオードは、効果的に並列に連結されたダイオード群を備える、請求項16に記載のパワーモジュール。
- 前記パワーモジュールは、少なくとも50kHzのスイッチング周波数で作動するよう構成されている、請求項11に記載のパワーモジュール。
- 前記少なくとも1つのトランジスタは、窒化アルミニウムの層の上方に形成されている、請求項11に記載のパワーモジュール。
- 前記1つあるいは複数のスイッチモジュールは、アルミニウム炭化ケイ素のベースプレートに取り付けられている、請求項19に記載のパワーモジュール。
- 前記1つあるいは複数のスイッチモジュールは、2つのスイッチモジュールで構成され、
前記スイッチモジュールは、正極電源端子と負極電源端子との間に直列に連結され、
出力端子は、前記スイッチモジュール間に連結されている、請求項15に記載のパワーモジュール。 - 前記パワーモジュールは、1200ボルトを遮断し、300アンペアを通電することが可能であり、20ミリジュール未満のスイッチングロスを有する、請求項11に記載のパワーモジュール。
- 前記パワーモジュールは、1組の出力コンタクトであって、前記出力コンタクトのそれぞれの少なくとも150mm2の領域が他方の出力コンタクトから1.5mm未満に位置するように配置された1組の出力コンタクトを更に備える、請求項22に記載のパワーモジュール。
- 前記パワーモジュールは、1組の出力コンタクトであって、前記出力コンタクトのそれぞれの少なくとも150mm2の領域が、他方の前記出力コンタクトから1.5mm未満に位置するように配置された1組の出力コンタクトを更に備える、請求項11に記載のパワーモジュール。
- 内部チャンバを有するハウジングと、
1組の出力コンタクトであって、前記出力コンタクトのそれぞれの少なくとも150mm2の領域が他方の前記出力コンタクトから1.5mm未満に位置するよう配置された1組の出力コンタクトと、
前記内部チャンバ内に取り付けられ、前記出力コンタクト間に連結された電源からの電力の負荷への切り替えを容易にするために相互連結され、少なくとも1つのトランジスタと少なくとも1つのダイオードとを備える複数のスイッチモジュールとを備える、パワーモジュール。 - 前記少なくとも1つのトランジスタおよび前記少なくとも1つのダイオードは、炭化ケイ素(SiC)デバイスである、請求項25に記載のパワーモジュール。
- 前記少なくとも1つのトランジスタは、金属酸化膜半導体電界効果トランジスタ(MOSFET)であり、前記少なくとも1つのダイオードは、ショットキーダイオードである、請求項26に記載のパワーモジュール。
- 前記少なくとも1つのトランジスタは、前記少なくとも1つのダイオードと逆並列に連結されている、請求項27に記載のパワーモジュール。
- 前記少なくとも1つのトランジスタは、効果的に並列に連結されたトランジスタ群を備え、前記少なくとも1つのダイオードは、効果的に並列に連結されたダイオード群を備える、請求項28に記載のパワーモジュール。
- 前記パワーモジュールは、少なくとも50kHzのスイッチング周波数で作動するよう構成されている、請求項25に記載のパワーモジュール。
- 前記少なくとも1つのトランジスタは、窒化アルミニウムの層の上方に形成されている、請求項25に記載のパワーモジュール。
- 前記複数のスイッチモジュールは、アルミニウム炭化ケイ素のベースプレートに取り付けられている、請求項31に記載のパワーモジュール。
- 前記複数のスイッチモジュールは、2つのスイッチモジュールを構成し、
前記スイッチモジュールは、正極電源端子と負極電源端子との間に直列に連結され、
出力端子が前記スイッチモジュール間に連結されている、請求項27に記載のパワーモジュール。 - 前記パワーモジュールは、1200ボルトを遮断し、300アンペアを通電することが可能であり、20ミリジュール未満のスイッチングロスを有する、請求項25に記載のパワーモジュール。
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