CN111900156B - 高电流、低切换损耗SiC功率模块 - Google Patents

高电流、低切换损耗SiC功率模块 Download PDF

Info

Publication number
CN111900156B
CN111900156B CN202010857239.6A CN202010857239A CN111900156B CN 111900156 B CN111900156 B CN 111900156B CN 202010857239 A CN202010857239 A CN 202010857239A CN 111900156 B CN111900156 B CN 111900156B
Authority
CN
China
Prior art keywords
power module
power
terminal
transistor
switching
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN202010857239.6A
Other languages
English (en)
Chinese (zh)
Other versions
CN111900156A (zh
Inventor
姆里纳尔·K·达斯
亨利·林
马塞洛·舒普巴赫
约翰·威廉斯·帕尔穆尔
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Wofu Semiconductor Co ltd
Original Assignee
Wofu Semiconductor Co ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US14/277,820 external-priority patent/US9373617B2/en
Application filed by Wofu Semiconductor Co ltd filed Critical Wofu Semiconductor Co ltd
Publication of CN111900156A publication Critical patent/CN111900156A/zh
Application granted granted Critical
Publication of CN111900156B publication Critical patent/CN111900156B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/30—Devices controlled by electric currents or voltages
    • H10D48/32—Devices controlled by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H10D48/34—Bipolar devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/832—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge being Group IV materials comprising two or more elements, e.g. SiGe
    • H10D62/8325—Silicon carbide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/075—Connecting or disconnecting of bond wires
    • H10W72/07551—Connecting or disconnecting of bond wires characterised by changes in properties of the bond wires during the connecting
    • H10W72/07552—Connecting or disconnecting of bond wires characterised by changes in properties of the bond wires during the connecting changes in structures or sizes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/521—Structures or relative sizes of bond wires
    • H10W72/527—Multiple bond wires having different sizes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/531—Shapes of wire connectors
    • H10W72/5363—Shapes of wire connectors the connected ends being wedge-shaped
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/541—Dispositions of bond wires
    • H10W72/547—Dispositions of multiple bond wires
    • H10W72/5473—Dispositions of multiple bond wires multiple bond wires connected to a common bond pad
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/541—Dispositions of bond wires
    • H10W72/547—Dispositions of multiple bond wires
    • H10W72/5475—Dispositions of multiple bond wires multiple bond wires connected to common bond pads at both ends of the wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/921—Structures or relative sizes of bond pads
    • H10W72/926—Multiple bond pads having different sizes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/931—Shapes of bond pads
    • H10W72/932—Plan-view shape, i.e. in top view
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/753—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between laterally-adjacent chips
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/754—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked insulating package substrate, interposer or RDL

Landscapes

  • Inverter Devices (AREA)
  • Power Conversion In General (AREA)
  • Junction Field-Effect Transistors (AREA)
CN202010857239.6A 2014-05-15 2015-05-14 高电流、低切换损耗SiC功率模块 Active CN111900156B (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US14/277,820 2014-05-15
US14/277,820 US9373617B2 (en) 2011-09-11 2014-05-15 High current, low switching loss SiC power module
CN201580037680.7A CN106537586B (zh) 2014-05-15 2015-05-14 高电流、低切换损耗SiC功率模块
PCT/US2015/030853 WO2015175820A1 (en) 2014-05-15 2015-05-14 HIGH CURRENT, LOW SWITCHING LOSS SiC POWER MODULE

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
CN201580037680.7A Division CN106537586B (zh) 2014-05-15 2015-05-14 高电流、低切换损耗SiC功率模块

Publications (2)

Publication Number Publication Date
CN111900156A CN111900156A (zh) 2020-11-06
CN111900156B true CN111900156B (zh) 2025-02-14

Family

ID=53277078

Family Applications (2)

Application Number Title Priority Date Filing Date
CN202010857239.6A Active CN111900156B (zh) 2014-05-15 2015-05-14 高电流、低切换损耗SiC功率模块
CN201580037680.7A Active CN106537586B (zh) 2014-05-15 2015-05-14 高电流、低切换损耗SiC功率模块

Family Applications After (1)

Application Number Title Priority Date Filing Date
CN201580037680.7A Active CN106537586B (zh) 2014-05-15 2015-05-14 高电流、低切换损耗SiC功率模块

Country Status (4)

Country Link
JP (2) JP7000022B2 (enExample)
CN (2) CN111900156B (enExample)
DE (1) DE112015002272B4 (enExample)
WO (1) WO2015175820A1 (enExample)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109997223B (zh) 2016-11-25 2023-06-30 日立能源瑞士股份公司 功率半导体模块
US10749443B2 (en) 2017-01-13 2020-08-18 Cree Fayetteville, Inc. High power multilayer module having low inductance and fast switching for paralleling power devices
US11696417B2 (en) 2017-01-13 2023-07-04 Wolfspeed, Inc. High power multilayer module having low inductance and fast switching for paralleling power devices
US10917992B2 (en) 2017-01-13 2021-02-09 Cree Fayetteville, Inc. High power multilayer module having low inductance and fast switching for paralleling power devices
JP7163054B2 (ja) 2017-04-20 2022-10-31 ローム株式会社 半導体装置
JP6893169B2 (ja) * 2017-12-26 2021-06-23 株式会社日立製作所 パワーモジュールおよび電力変換装置
CN108598074B (zh) * 2018-06-15 2024-02-02 华北电力大学 一种新型封装结构的功率模块
CN111245230B (zh) * 2018-11-29 2021-06-04 致茂电子(苏州)有限公司 半桥电路组件及切换式电源供应器
KR102787083B1 (ko) * 2019-01-10 2025-03-26 울프스피드 인코포레이티드 전력 장치를 병렬화하기 위한 낮은 인덕턴스와 빠른 스위칭을 갖는 고전력 다층 모듈
US11418141B2 (en) * 2019-09-18 2022-08-16 Eaton Intelligent Power Limited Hybrid drive apparatus
CN112953168A (zh) * 2021-03-03 2021-06-11 中山市科力高氢能设备有限公司 一种开关管电路结构及电路系统
CN116918066A (zh) 2021-09-09 2023-10-20 富士电机株式会社 半导体模块
DE102021214521A1 (de) 2021-12-16 2023-06-22 Robert Bosch Gesellschaft mit beschränkter Haftung Vorrichtung, Halbbrücke und Verfahren zum Betreiben einer Vorrichtung
JP7750810B2 (ja) * 2022-09-12 2025-10-07 株式会社東芝 半導体装置
DE102022134658A1 (de) 2022-12-22 2024-06-27 Valeo Eautomotive Germany Gmbh Leistungsmodul, elektrischer Leistungswandler und elektrischer Antrieb für ein Transportmittel
CN221614839U (zh) * 2023-12-08 2024-08-27 上海理想汽车科技有限公司 功率半导体模块及半桥功率模块
CN119050103B (zh) * 2024-08-19 2025-09-23 复旦大学 一种功率模块的多层金属绝缘基板及其制备方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101263547A (zh) * 2005-06-24 2008-09-10 国际整流器公司 具有低电感的半导体半桥模块
CN102184914A (zh) * 2009-10-30 2011-09-14 英飞凌科技股份有限公司 功率半导体模块和用于运行功率半导体模块的方法
CN202917466U (zh) * 2012-12-05 2013-05-01 齐齐哈尔齐力达电子有限公司 增加功率半导体模块爬电距离的装置

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0828341B1 (en) 1996-09-06 2003-12-03 Hitachi, Ltd. Modular type power semiconductor apparatus
JPH10290562A (ja) * 1997-04-14 1998-10-27 Toshiba Corp ゲート抵抗器及びこれに接続される圧接型ｉｇｂｔ
JP4513770B2 (ja) * 2006-02-28 2010-07-28 株式会社豊田自動織機 半導体装置
JP5241344B2 (ja) * 2008-06-30 2013-07-17 日立オートモティブシステムズ株式会社 パワーモジュール及び電力変換装置
US8237260B2 (en) * 2008-11-26 2012-08-07 Infineon Technologies Ag Power semiconductor module with segmented base plate
WO2010131679A1 (ja) 2009-05-14 2010-11-18 ローム株式会社 半導体装置
US9640617B2 (en) * 2011-09-11 2017-05-02 Cree, Inc. High performance power module
CN103036394A (zh) * 2011-09-29 2013-04-10 台达电子企业管理（上海）有限公司 一种用于中高压变频器的散热装置
JP5879233B2 (ja) * 2012-08-31 2016-03-08 日立オートモティブシステムズ株式会社 パワー半導体モジュール

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101263547A (zh) * 2005-06-24 2008-09-10 国际整流器公司 具有低电感的半导体半桥模块
CN102184914A (zh) * 2009-10-30 2011-09-14 英飞凌科技股份有限公司 功率半导体模块和用于运行功率半导体模块的方法
CN202917466U (zh) * 2012-12-05 2013-05-01 齐齐哈尔齐力达电子有限公司 增加功率半导体模块爬电距离的装置

Also Published As

Publication number Publication date
JP2017516312A (ja) 2017-06-15
CN106537586A (zh) 2017-03-22
DE112015002272T5 (de) 2017-02-09
DE112015002272B4 (de) 2024-07-25
JP7000022B2 (ja) 2022-01-19
JP7056836B2 (ja) 2022-04-19
CN111900156A (zh) 2020-11-06
WO2015175820A1 (en) 2015-11-19
CN106537586B (zh) 2020-09-11
JP2020098921A (ja) 2020-06-25

Similar Documents

Publication Publication Date Title
JP7056836B2 (ja) 高電流、低スイッチングロスのＳｉＣパワーモジュール
US10141302B2 (en) High current, low switching loss SiC power module
US10607978B2 (en) Semiconductor device and electronic apparatus
US8816497B2 (en) Electronic devices and components for high efficiency power circuits
CN110235244B (zh) 功率半导体模块以及电力转换装置
CN102184914B (zh) 功率半导体模块和用于运行功率半导体模块的方法
US9209176B2 (en) Semiconductor modules and methods of forming the same
US12627290B2 (en) Switching components
US9525063B2 (en) Switching circuit
CN107833885B (zh) 功率开关器件
US20180211904A1 (en) Interdigit device on leadframe for evenly distributed current flow
US20240421139A1 (en) Module assembly of multiple semiconductor devices with insulating substrates
CN116075925A (zh) 具有贯通通路结构的iii-氮化物器件
WO2016000840A1 (en) Power semiconductor module
JP2020513689A (ja) 高電圧および高電流スイッチング用の電源デバイス
US20200304035A1 (en) Semiconductor device
US10516343B2 (en) Power semiconductor package and applications
CN114079446A (zh) 开关装置及用于制造开关装置的方法
TWI850113B (zh) 功率模組封裝結構以及功率電晶體
CN118538696A (zh) 半导体装置

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
CB02 Change of applicant information
CB02 Change of applicant information

Address after: North Carolina

Applicant after: Wofu Semiconductor Co.,Ltd.

Address before: North Carolina

Applicant before: CREE, Inc.

GR01 Patent grant
GR01 Patent grant