JP7000022B2 - 高電流、低スイッチングロスのＳｉＣパワーモジュール - Google Patents

高電流、低スイッチングロスのＳｉＣパワーモジュール Download PDF

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Publication number
JP7000022B2
JP7000022B2 JP2016567562A JP2016567562A JP7000022B2 JP 7000022 B2 JP7000022 B2 JP 7000022B2 JP 2016567562 A JP2016567562 A JP 2016567562A JP 2016567562 A JP2016567562 A JP 2016567562A JP 7000022 B2 JP7000022 B2 JP 7000022B2
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Prior art keywords
power module
power
terminal
transistor
diode
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Japanese (ja)
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JP2017516312A (ja
JP2017516312A5 (enExample
Inventor
ムリナル ケー． ダス
ヘンリー リン
マルセロ シュプバッハ
ジョン ウィリアムズ パルマー
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Wolfspeed Inc
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Cree Inc
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Priority claimed from US14/277,820 external-priority patent/US9373617B2/en
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Publication of JP2017516312A5 publication Critical patent/JP2017516312A5/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/30—Devices controlled by electric currents or voltages
    • H10D48/32—Devices controlled by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H10D48/34—Bipolar devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/832—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge being Group IV materials comprising two or more elements, e.g. SiGe
    • H10D62/8325—Silicon carbide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/075—Connecting or disconnecting of bond wires
    • H10W72/07551—Connecting or disconnecting of bond wires characterised by changes in properties of the bond wires during the connecting
    • H10W72/07552—Connecting or disconnecting of bond wires characterised by changes in properties of the bond wires during the connecting changes in structures or sizes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/521—Structures or relative sizes of bond wires
    • H10W72/527—Multiple bond wires having different sizes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/531—Shapes of wire connectors
    • H10W72/5363—Shapes of wire connectors the connected ends being wedge-shaped
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/541—Dispositions of bond wires
    • H10W72/547—Dispositions of multiple bond wires
    • H10W72/5473—Dispositions of multiple bond wires multiple bond wires connected to a common bond pad
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/541—Dispositions of bond wires
    • H10W72/547—Dispositions of multiple bond wires
    • H10W72/5475—Dispositions of multiple bond wires multiple bond wires connected to common bond pads at both ends of the wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/921—Structures or relative sizes of bond pads
    • H10W72/926—Multiple bond pads having different sizes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/931—Shapes of bond pads
    • H10W72/932—Plan-view shape, i.e. in top view
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/753—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between laterally-adjacent chips
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/754—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked insulating package substrate, interposer or RDL

Landscapes

  • Inverter Devices (AREA)
  • Power Conversion In General (AREA)
  • Junction Field-Effect Transistors (AREA)
JP2016567562A 2014-05-15 2015-05-14 高電流、低スイッチングロスのＳｉＣパワーモジュール Active JP7000022B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US14/277,820 2014-05-15
US14/277,820 US9373617B2 (en) 2011-09-11 2014-05-15 High current, low switching loss SiC power module
PCT/US2015/030853 WO2015175820A1 (en) 2014-05-15 2015-05-14 HIGH CURRENT, LOW SWITCHING LOSS SiC POWER MODULE

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2020015417A Division JP7056836B2 (ja) 2014-05-15 2020-01-31 高電流、低スイッチングロスのＳｉＣパワーモジュール

Publications (3)

Publication Number Publication Date
JP2017516312A JP2017516312A (ja) 2017-06-15
JP2017516312A5 JP2017516312A5 (enExample) 2017-12-07
JP7000022B2 true JP7000022B2 (ja) 2022-01-19

Family

ID=53277078

Family Applications (2)

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JP2016567562A Active JP7000022B2 (ja) 2014-05-15 2015-05-14 高電流、低スイッチングロスのＳｉＣパワーモジュール
JP2020015417A Active JP7056836B2 (ja) 2014-05-15 2020-01-31 高電流、低スイッチングロスのＳｉＣパワーモジュール

Family Applications After (1)

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JP2020015417A Active JP7056836B2 (ja) 2014-05-15 2020-01-31 高電流、低スイッチングロスのＳｉＣパワーモジュール

Country Status (4)

Country Link
JP (2) JP7000022B2 (enExample)
CN (2) CN111900156B (enExample)
DE (1) DE112015002272B4 (enExample)
WO (1) WO2015175820A1 (enExample)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109997223B (zh) 2016-11-25 2023-06-30 日立能源瑞士股份公司 功率半导体模块
US10749443B2 (en) 2017-01-13 2020-08-18 Cree Fayetteville, Inc. High power multilayer module having low inductance and fast switching for paralleling power devices
US11696417B2 (en) 2017-01-13 2023-07-04 Wolfspeed, Inc. High power multilayer module having low inductance and fast switching for paralleling power devices
US10917992B2 (en) 2017-01-13 2021-02-09 Cree Fayetteville, Inc. High power multilayer module having low inductance and fast switching for paralleling power devices
JP7163054B2 (ja) 2017-04-20 2022-10-31 ローム株式会社 半導体装置
JP6893169B2 (ja) * 2017-12-26 2021-06-23 株式会社日立製作所 パワーモジュールおよび電力変換装置
CN108598074B (zh) * 2018-06-15 2024-02-02 华北电力大学 一种新型封装结构的功率模块
CN111245230B (zh) * 2018-11-29 2021-06-04 致茂电子(苏州)有限公司 半桥电路组件及切换式电源供应器
KR102787083B1 (ko) * 2019-01-10 2025-03-26 울프스피드 인코포레이티드 전력 장치를 병렬화하기 위한 낮은 인덕턴스와 빠른 스위칭을 갖는 고전력 다층 모듈
US11418141B2 (en) * 2019-09-18 2022-08-16 Eaton Intelligent Power Limited Hybrid drive apparatus
CN112953168A (zh) * 2021-03-03 2021-06-11 中山市科力高氢能设备有限公司 一种开关管电路结构及电路系统
CN116918066A (zh) 2021-09-09 2023-10-20 富士电机株式会社 半导体模块
DE102021214521A1 (de) 2021-12-16 2023-06-22 Robert Bosch Gesellschaft mit beschränkter Haftung Vorrichtung, Halbbrücke und Verfahren zum Betreiben einer Vorrichtung
JP7750810B2 (ja) * 2022-09-12 2025-10-07 株式会社東芝 半導体装置
DE102022134658A1 (de) 2022-12-22 2024-06-27 Valeo Eautomotive Germany Gmbh Leistungsmodul, elektrischer Leistungswandler und elektrischer Antrieb für ein Transportmittel
CN221614839U (zh) * 2023-12-08 2024-08-27 上海理想汽车科技有限公司 功率半导体模块及半桥功率模块
CN119050103B (zh) * 2024-08-19 2025-09-23 复旦大学 一种功率模块的多层金属绝缘基板及其制备方法

Citations (1)

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Publication number Priority date Publication date Assignee Title
US20130248883A1 (en) 2011-09-11 2013-09-26 Cree, Inc. High performance power module

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JPH10290562A (ja) * 1997-04-14 1998-10-27 Toshiba Corp ゲート抵抗器及びこれに接続される圧接型ｉｇｂｔ
EP1908049A2 (en) * 2005-06-24 2008-04-09 International Rectifier Corporation Semiconductor half-bridge module with low inductance
JP4513770B2 (ja) * 2006-02-28 2010-07-28 株式会社豊田自動織機 半導体装置
JP5241344B2 (ja) * 2008-06-30 2013-07-17 日立オートモティブシステムズ株式会社 パワーモジュール及び電力変換装置
US8237260B2 (en) * 2008-11-26 2012-08-07 Infineon Technologies Ag Power semiconductor module with segmented base plate
WO2010131679A1 (ja) 2009-05-14 2010-11-18 ローム株式会社 半導体装置
DE102009046258B3 (de) * 2009-10-30 2011-07-07 Infineon Technologies AG, 85579 Leistungshalbleitermodul und Verfahren zum Betrieb eines Leistungshalbleitermoduls
CN103036394A (zh) * 2011-09-29 2013-04-10 台达电子企业管理（上海）有限公司 一种用于中高压变频器的散热装置
JP5879233B2 (ja) * 2012-08-31 2016-03-08 日立オートモティブシステムズ株式会社 パワー半導体モジュール
CN202917466U (zh) * 2012-12-05 2013-05-01 齐齐哈尔齐力达电子有限公司 增加功率半导体模块爬电距离的装置

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US20130248883A1 (en) 2011-09-11 2013-09-26 Cree, Inc. High performance power module

Also Published As

Publication number Publication date
JP2017516312A (ja) 2017-06-15
CN106537586A (zh) 2017-03-22
DE112015002272T5 (de) 2017-02-09
DE112015002272B4 (de) 2024-07-25
JP7056836B2 (ja) 2022-04-19
CN111900156A (zh) 2020-11-06
WO2015175820A1 (en) 2015-11-19
CN106537586B (zh) 2020-09-11
JP2020098921A (ja) 2020-06-25
CN111900156B (zh) 2025-02-14

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